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Your search keyword '"Karakostas, Th."' showing total 22 results
Start Over Author "Karakostas, Th." Publication Type Books
22 results on '"Karakostas, Th."'

16. Residual Strain Variations in MBE-Grown InN Thin Films

Author

Delimitis, A, primary, Komninou, Ph, additional, Arvanitidis, J, additional, Katsikini, M, additional, Sahonta, S-L, additional, Dimakis, E, additional, Ves, S, additional, Paloura, E C, additional, Pinakidou, F, additional, Nouet, G, additional, Georgakilas, A, additional, and Karakostas, Th, additional

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20. Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBE.

Author

Cullis, A. G., Hutchison, J. L., Delimitis, A., Komninou, Ph., Kehagias, Th., Karakostas, Th., Dimakis, E., Georgakilas, A., and Nouet, G.

Abstract

The structural characteristics of compact and columnar InN films grown by molecular beam epitaxy on GaN templates are investigated by transmission electron microscopy. Compact mode of growth is favoured at low substrate temperatures, below 500 °C, and by the introduction of an InN nucleation layer prior to the InN epilayer growth. Improved quality compact InN films, having threading dislocations with densities on the order of 109-1010 cm−2, are achieved by using high In/N flux ratios. Compact films generally exhibit higher in-plane lattice constant values than columnar ones and, consequently, higher densities of InN/GaN interfacial misfit dislocations. [ABSTRACT FROM AUTHOR]

Published
2005
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21. Experimental Study of Microhardness and Fracture of Implanted Gállium Nitride Films.

Author

Gdoutos, E. E., Kavouras, P., Katsikini, M., Wendler, E., Wesch, W., Polatoglou, H. M., Paloura, E. C., Komninou, Ph., and Karakostas, Th.

Abstract

The investigation of radiation effects in III-V semiconductors is of current interest because of the potential application of ion implantation in the production of electronic and photonic devices. Of the plethora of III-V semiconductors, gallium nitride (GaN) has attracted keen interest, during past decade, as wide gap semiconductor for numerous applications, including high-power or high frequency devices and high-power switches. Although there is considerable interest in determining the influence of ion implantation on the mechanical properties of GaN films, the matter has received only scant attention, see for example Kavouras et al. [1]. Indeed, studies of the processes controlling hardness, contact damage and cracking of epitaxially grown GaN films have significant technological importance. [ABSTRACT FROM AUTHOR]

Published
2006
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