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Abstract Improvements in the polarization of environmentally-friendly perovskite ferroelectrics have proved to be a challenging task in order to replace the toxic Pb-based counterparts. In contrast to common methods by complex chemical composition designs, we have formed Mn-inlaid antiphase boundaries in Mn-doped (K,Na)NbO3 thin films using pulsed laser deposition method. Here, we observed that mono- or bi-atomic layer of Mn has been identified to inlay along the antiphase boundaries to balance the charges originated from the deficiency of alkali ions and to induce the strain in the KNN films. Thus, rectangular saturated polarization-electric field hysteresis loops have been achieved, with a significantly improved twice remanent polarization of 114 μC/cm2 with an applied electric field of 606 kV/cm, which can be comparable to that of the typical Pb-based thin films. Moreover, we directly see the Mn occupation at the A-site of KNN perovskite structure using atomic-scale microstructure and composition analysis. The Mn-inlaid antiphase boundary can further enrich the understanding of perovskite crystal structure and give more possibilities for the design and optimization of perovskite materials.

Abstract In situ high-pressure/high-temperature Raman-scattering analyses on PbTiO $$_3$$ 3 , 0.92PbTiO $$_3-$$ 3 - 0.08Bi(Zn $$_{0.5}$$ 0.5 Ti $$_{0.5}$$ 0.5 )O $$_3$$ 3 and 0.83PbTiO $$_3-$$ 3 - 0.17Bi(Mg $$_{0.5}$$ 0.5 Ti $$_{0.5}$$ 0.5 )O $$_3$$ 3 single crystals reveal an intensity transfer between the fine-structure components of the A $$_1$$ 1 (TO) soft mode. The enhancement of the lowest-energy subpeak, which stems from intrinsic local non-tetragonal polar distortions, along with the suppression of the tetragonal A $$_1$$ 1 (1TO) fundamental mode with increasing pressure and temperature indicates the key role of the local polarization fluctuations in transformation processes and emphasizes the significance of the order-disorder phenomena in both the pressure- and temperature-induced phase transitions of pure PbTiO $$_3$$ 3 and its solid solutions with complex perovskites. Moreover, the temperature and pressure evolution of the fraction of the local non-tetragonal polar distortions is highly sensitive to the type of B-site substituent.

X-ray photon correlation spectroscopy (XPCS) holds strong promise for observing atomic-scale dynamics in materials, both at equilibrium and during non-equilibrium transitions. Here an in situ XPCS study of the relaxor ferroelectric PbMg1/3Nb2/3O3 (PMN) is reported. A weak applied AC electric field generates strong response in the speckle of the diffuse scattering from the polar nanodomains, which is captured using the two-time correlation function. Correlated motions of the Bragg peak are also observed, which indicate dynamic tilting of the illuminated volume. This tilting quantitatively accounts for the observed two-time speckle correlations. The magnitude of the tilting would not be expected solely from the modest applied field, since PMN is an electrostrictive material with no linear strain response to the field. A model is developed based on non-uniform static charging of the illuminated surface spot by the incident micrometre-scale X-ray beam and the electrostrictive material response to the combination of static and dynamic fields. The model qualitatively explains the direction and magnitude of the observed tilting, and predicts that X-ray-induced piezoresponse could be an important factor in correctly interpreting results from XPCS and nanodiffraction studies of other insulating materials under applied AC field or varying X-ray illumination.

Lead-free bismuth sodium titanate (Bi0.5Na0.5)TiO3 (BNT) and related solid solutions are potential piezoelectric materials for such applications as actuators and transducers if their excellent strain responses and piezoelectric properties can be optimized. In this work, a large strain response of 0.61% is achieved in lead-free (0.94-x%)(Bi0.5Na0.5)TiO3-0.06BaTiO3-x%NaNbO3 (x = 0 –6, BNT-6BT-xNN) ceramics with the composition of x = 3.5 in a pseudo-cubic structure. Coexistence of ferroelectric (FE) and relaxor (RE) domain structures is observed in all the unpoled ceramics and the enhanced strain response is believed to be related to the evolution of the ergodic relaxor (ER) and non-ergodic (NR) states thanks to the substitution of antiferroelectric NN. BNT-6BT-3.5NN is a critical composition near the FE/NR/ER phase boundary close to room temperature (RT) and its high strain response arises from a synergistic combination of a reversible electric-field-induced phase transition and an active domain switching in the mixed NR/ER state. This work provides new insights into the dynamic interplay between mesoscopic domains and macroscopic electrical properties in the BNT-based piezoceramics.

The integration of epitaxial complex oxides on semiconductor and flexible substrates is required but challenging. Here, the authors report the highly heterogeneous epitaxy of transferrable BaTiO3-δ membrane with enhanced flexoelectricity on Ge (011).

Hardware electronic synapse and neuro-inspired computing system based on phase change random access memory (PCRAM) have attracted an extensive investigation. However, due to the intrinsic asymmetric reversible phase transition, the defective weight update of PCRAM synapses in aspects of tuning range, linearity and continuity has long required a system-level complexity of circuits and algorithms. The cell-level improvements to a great extent may slim the system thus achieving efficient computing. We report in this work the great enhancement of Ge2Sb2Te5 (GST) based PCRAM synapses by combining materials engineering and pulse programming. It is found that carbon doping in GST retards the rate of phase changing thus increasing the controllability of the conductance, while non-linear programmable pulse excitations can eventually lead to a reliable synaptic potentiation and depression. A set of improved programmable pulse schemes for spike-timing dependent plasticity was then demonstrated, suggesting its potential superiority in flexible programming and reliable data collection. Our methods and results are of great significance for implementing PCRAM electronic synapses and high-performance neuro-inspired computing.

Relaxor ferroelectrics are a type of material exhibiting electrostriction whereby a change in the material shape occurs under an applied electric field; however, although known by the community for many years the underlying mechanisms of the phenomenon and the characteristic relaxations still remain under debate. To help address this issue, the authors report an equivalent circuit analysis revealing the key role of a constant phase element in the behaviour of relaxor ferroelectric single crystals.

Phase transition brings a plethora of exotic phenomena and intriguing effects such as spin and charge frustration. However, the phase transition order is not always explicit. Here, the authors discover phase transition frustration near a tricritical composition point in ferroelectric Pb(Zr,Ti)O3.

Lead hafnate (PbHfO3) has attracted a lot of renewed interest due to its potential as antiferroelectric (AFE) material for energy storage. However, its room temperature (RT) energy-storage performance has not been well established and no reports on the energy-storage feature of its high-temperature intermediate phase (IM) are available. In this work, high-quality PbHfO3 ceramics were prepared via the solid-state synthesis route. Based on high-temperature X-ray diffraction data, the IM of PbHfO3 was found to be orthorhombic, Imma space group, with antiparallel alignment of Pb2+ ions along the [001]cubic directions. The polarization–electric field (P–E) relation of PbHfO3 is displayed at RT as well as in the temperature range of the IM. A typical AFE loop revealed an optimal recoverable energy-storage density (Wrec) of 2.7 J/cm3, which is 286% higher than the reported data with an efficiency (η) of 65% at 235 kV/cm at RT. A relatively high Wrec value of 0.7 J/cm3 was found at 190 °C with an η of 89% at 65 kV/cm. These results demonstrate that PbHfO3 is a prototypical AFE from RT up to 200 °C, making it a suitable material for energy-storage applications in a wide temperature range.

The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices.

Pure-phase Pb(Cd1/3Nb2/3)O3 (PCN) single crystals and ceramics with a complex perovskite structure are synthesized for the first time. The local chemical ordering in PCN has been investigated by X-ray diffraction (including diffuse scattering) and Cs-corrected transmission electron microscopy experiments. It is concluded that the PCN samples have large coherent chemical ordering regions that even extend to the long range, and the ordering model is consistent with β-type chemical ordered regions. The antiphase domain boundaries were also observed. Two dielectric anomaly peaks were found in these two types of samples, one of which indicates possible relaxor behaviour. The novel structure of the completely ordered regions and its relationship with the electrical properties make PCN a unique material for the fundamental understanding of chemically substituted perovskites.

PbZrO3-based antiferroelectric crystals are of great interest in both fundamental and applied research, not only because of the antiferroelectric feature at room temperature but also because of the existence of a peculiar intermediate state at elevated temperatures. Here, we report a detailed description of domain structure change at the temperature-induced antiferroelectric-to-ferroelectric phase transition. A complex process of different types of domains is revealed to appear at different stages of the phase transition. A hierarchical ferroelastic domain structure forms in the stabilized intermediate state, where the dense domain walls show potential impact on the physical properties of the crystal.

This editorial celebrates the 10th anniversary of Journal of Advanced Dielectrics (JAD) which was launched in January 2011.

Lead zirconate titanate (PZT) is one of the most widely studied piezoelectric materials, mainly because of its `mysterious' relationship between the so-called morphotropic phase boundary (MPB) and its strong piezoelectric coupling factor. Using results from a pair distribution function analysis, this paper examines how the complex local structure in PZT affects the long-range average structure across the MPB. A monoclinic MC type structure is discovered in PZT. A first-order transformation between the monoclinic MA and MC components in both the average and local structures explains the sudden change in piezoelectric effect around these compositions. The role of polarization rotation in the enhancement of the piezoelectric properties is discussed with respect to the composition of PZT. The structure–property relationship that is revealed by this study explains the unique properties of PZT, and may be applicable in the design of new MPB-type functional materials.

Combining a perovskite ferroelectric with moderate piezoelectric properties and a nonpiezoelectric pervoskite relaxor can create a highly piezoelectric material. Here, the authors help explain this unusual result by quantifying how polar nanoregions in the material contribute to its piezoelectric response.

How materials evolve at thermal equilibrium and under external excitations at small length and time scales is crucial to the understanding and control of material properties. X-ray photon correlation spectroscopy (XPCS) at X-ray free electron laser (XFEL) facilities can in principle capture dynamics of materials that are substantially faster than a millisecond. However, the analysis and interpretation of XPCS data is hindered by the strongly fluctuating X-ray intensity from XFELs. Here we examine the impact of pulse-to-pulse intensity fluctuations on sequential XPCS analysis. We show that the conventional XPCS analysis can still faithfully capture the characteristic time scales, but with substantial decrease in the signal-to-noise ratio of the g2 function and increase in the uncertainties of the extracted time constants. We also demonstrate protocols for improving the signal-to-noise ratio and reducing the uncertainties.

Flexible rotation of spontaneous polarization at ferroelectric domain walls is predicted in theory but lacks evidence from experiment. Here, Wei et al. image a Néel-like domain wall in Ti-rich ferroelectric Pb(Zr1−xTix)O3crystals, providing insight in exploring chiral domain walls in ferroelectrics.

An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 μV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.

In this paper, we present a new approach to the fabrication of integrated silicon-based piezoelectric diaphragm-type biosensors by using sodium potassium niobate-silver niobate (0.82KNN-0.18AN) composite lead-free thin film as the piezoelectric layer. The piezoelectric diaphragms were designed and fabricated by micro-machining technology and chemical solution deposition. The fabricated device was very sensitive to the mass changes caused by various targets attached on the surface of diaphragm. The measured mass sensitivity value was about 931 Hz/μg. Its good performance shows that the piezoelectric diaphragm biosensor can be used as a cost-effective platform for nucleic acid testing.

X-ray photon correlation spectroscopy (XPCS) holds strong promise for observing atomic-scale dynamics in materials, both at equilibrium and during non-equilibrium transitions. Here an in situ XPCS study of the relaxor ferroelectric PbMg1/3Nb2/3O3 (PMN) is reported. A weak applied AC electric field generates strong response in the speckle of the diffuse scattering from the polar nanodomains, which is captured using the two-time correlation function. Correlated motions of the Bragg peak are also observed, which indicate dynamic tilting of the illuminated volume. This tilting quantitatively accounts for the observed two-time speckle correlations. The magnitude of the tilting would not be expected solely from the modest applied field, since PMN is an electrostrictive material with no linear strain response to the field. A model is developed based on non-uniform static charging of the illuminated surface spot by the incident micrometre-scale X-ray beam and the electrostrictive material response to the combination of static and dynamic fields. The model qualitatively explains the direction and magnitude of the observed tilting, and predicts that X-ray-induced piezoresponse could be an important factor in correctly interpreting results from XPCS and nanodiffraction studies of other insulating materials under applied AC field or varying X-ray illumination. [ABSTRACT FROM AUTHOR]

Piezoresponse force microscopy (PFM) is used for examining the domain structure of multiferroic BiFe[O.sub.3]-PbTi[O.sub.3] single crystals with morphotropic phase boundary (MPB) compositions. The analysis of the complex PFM patterns obtained from the design setup has disclosed the presence of the rhombohedral, tetragonal, and orthorhombic domains, which is characteristic of the phase behavior of the MPB compositions.

The typical characteristics of relaxor ferroelectric with broad and dispersive permittivity maxima are observed in the solid solution between the dielectric complex perovskite (BZN) and ferroelectric PbTi[O.sub.3] (PT).Findings reveal that the increase in PT content weakens relaxor behavior.

The multiferroic solid solution of (1-x)[0.9BiFeO3--0.1DyFeO3]--xPbTiO3 with compositions around the morphotropic phase boundary has been synthesized in the form of ceramics and characterized by Piezoresponse Force Microscope (PFM) and Superconducting Quantum Interference Device. Both the original local polar domain structure and the domain evolution after poling have been studied by PFM. The PFM phase imaging has revealed some interesting details of poling and domain switching process: The out-of-plane phase image shows a uniform direction of polarization along the applied electric field, while the in-plane phase image indicates two kinds of domains with antiparallel polarizations. This kind of poled domain structure is explained based on the orientations of the polarization as permitted by the rhombohedral crystal symmetry in grains of different crystallographic orientations. The magnetic properties measured within the temperature range from 1.8K to 300K reveal an interesting sequence of magnetic transitions from a weakly ferromagnetic order (WFM1) to an antiferromagnetic state (AFM), and then to another weak ferromagnetic phase (WFM2), upon cooling. A preliminary magnetic phase diagram is proposed for BDF-34PT. [ABSTRACT FROM AUTHOR]

One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe3O4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe3O4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H2/Ar at 400 °C, the as-grown α-Fe2O3 sample is reduced tofe3O4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with wellcontrolled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications. [ABSTRACT FROM AUTHOR]

A study prepared bismuth-doped LaAlO3 in the form of solid solution, [La.sub.(1-x)][Bi.sub.x]AlO3, by solid-state reactions. It was observed that with increasing bismuth amount (x), the dielectric constant increases from 31.6 for pure LaAlO3 to 34.6 for x=0.2 while the loss tangent drops from 0.03 to 0.004.

The multiferroic (1–x)[0.9BiFeO3–0.1DyFeO3]–xPbTiO3 (BDF–xPT) solid solution with compositions around the morphotropic phase boundary (x=0.25, 0.28, 0.31, 0.34, and 0.37) has been synthesized in the form of ceramics. The phase symmetry, microstructure, ferroelectricity, piezoresponse, and ferromagnetic properties have been characterized by various techniques. It is found that, with increasing content of lead titanate from x=0.25 to x=0.37, the grain size increases and the ferroelectric property is improved. The ferroelectric performance is further enhanced by the introduction of an excess amount (2%) of TiO2 or by sintering in oxygen atmosphere, which reduces the leakage. The local polar structure is imaged by piezoresponse force microscopy. Both the outof- plane and in-plane images reveal distinct ferroelectric domain structures, with the amplitude and the average domain size decreasing with the increase of lead titanate amount. Compared with the (1–x)BiFeO3–xPbTiO3 binary solid solution of about the same concentration of PT, the magnetic properties are enhanced in BDF–xPT due to the presence of dysprosium, as demonstrated by the ferromagnetic hysteresis loops displayed at room temperature and at 10 K, but the remnant magnetization decreases with increasing PT content. The simultaneous presence of ferroelectricity and ferromagnetism entitles the BDF–xPT solid solution a room-temperature multiferroic material. [ABSTRACT FROM AUTHOR]

A new solid solution of complex perovksite structure, (1-x)PbZrO3-xPb(Mn1/2W1/2)O3 (PZxPMnW, with x=0-0.1), is prepared by solid state reaction method. Its crystal structure, dielectric properties, and antiferroelectricity are investigated. It is found that the crystal structure of the solid solution remains in the orthorhombic Pbam symmetry with x≤0.1. The induced ferroelectric polarization (PInd) is enhanced, whereas the critical field (ECr) is decreased, with increasing PMnW concentration, indicating the softening of antiferroelectricity in PZ. The Curie temperature (TC) is also decreased with the substitution of PMnW for PZ. The grain size is significantly enlarged, which could be attributed to the presence of a transient liquid phase during the sintering process. Measurements of the magnetization by means of SQUID confirm that the Mn ion exists in a high spin state with a 2+ oxidation state. The softening of antiferroelectric order and the improvement in induced polarization make the PZ-PMnW ceramics an interesting material system for such applications as energy storage devices. [ABSTRACT FROM AUTHOR]

Ferroelectric single crystals of a new lead-reduced Bi(Zn1/2Ti1/2)O3-PbZrO3-PbTiO3 (BZT-PZ-PT) ternary solid solution system have been grown for the first time by three different methods, namely high temperature solution growth (HTSG, or flux method), top-cooled solution growth (TCSG), and top-seeded solution growth (TSSG). The chemical and thermodynamic parameters, including the flux concentration, the soaking temperature and the cooling rate, have been optimized, leading to the growth of good quality BZT-PZ-PT crystals of pseudo-cubic morphology. A large size crystal of the dimensions of 2 x 2 x 0.5 cm³ has been obtained by the TSSG technique. The crystal structure is analyzed by means of X-ray powder diffraction. The highest ferroelectric Curie temperature TC of the grown crystals is found to be 320 °C by means of dielectric measurements. A remnant polarization of 32 µC/cm² is displayed with a coercive field of 15.4kV/cm. The high TC and large coercive field of the BZT-PZ-PT single crystal make this material a promising candidate for applications in high power electromechanical transducers that can operate in a wider temperature range and at high fields. [ABSTRACT FROM AUTHOR]

High-pressure Brillouin and Raman scattering spectroscopy and x-ray diffraction measurements were performed on disordered Pb([Sc.sub.1/2][Nb.sub.1/2])[O.sub.3] to demonstrate its application as a model system for phase transitions in relaxor ferroelectrics and related materials. Both the temperature and pressure dependencies of the linewidth indicated that the longitudinal acoustic mode softening arises from electrostrictive coupling between polar nanoregions and acoustic modes.

The longitudinal acoustic phonon modes of Pb([Mg.sub.1/3][Nb.sub.2/3])[O.sub.3] (PMN) and La-doped PMN are examined by using Brillouin spectroscopy. The results have shown that the temperature evolution of dynamic polar nonregions and the related high-frequency dynamics of PMN-based crystals in the gigahertz range are not affected by the size of the B-site cation-ordered regions.

The synthesis and characterization of a new ferroelectric solid solution of (1-x)Ba([Yb.sub.1/2][Nb.sub.1/2])[O.sub.3]-xPbTi[O.sub.3] in the form of ceramics by solid-state reactions is reported. The system is observed to exhibit a morphotropic phase boundary with composition of 0.65

A new lead-free (1-x)BaTi[O.sub.3]-xBiAl[O.sub.3] solid solution is prepared by solid state reactions and the composition dependences of the structure and dielectric properties are analyzed. The studies have shown that the long-range polar order from the end member BaTi[O.sub.3] has persisted and coexisted with polar nanoregions induced by the chemical disorder following the coupled substitutions in the solid solution.

A new solid solution of (1-x)Ba([Zn.sub.1/3][Nb.sub.2/3])[O.sub.3]-xPbTi[O.sub.3] [(1-x)BZN-xPT] is synthesized in the form of ceramics by solid state reactions and characterized by using x-ray diffraction, dielectric spectroscopy and ferroelectric measurements. The room-temperature real permittivity of BZN-PT with morphotropic phase boundary (MPB) compositions is very high, indicating that the BZN-PT solid solution is useful in applications like microwave dielectrics and high power density capacitors.

The acoustic and dielectric properties of Pb[[(Zn1/3Nb2/3)].sub.1-x][Ti.sub.x]]O3 (PZN-xPT) single crystals with x=0.045 is conducted by the high-resolution micro-Brillouin scattering and dielectric spectroscopy in a wide temperature range. The softening of the Brillouin shift and the increase of dielectric relaxation time upon cooling indicated the formation of polar nanoregions (PNRs) and the slowing down of their dynamics.

The crystal structure, multinuclear solid-state NMR spectra and high optical birefringence of Pb[Au(CN)(sub 2)](sub 2)(H2O)(sub x) (x = 0, 1) are reported. The results show that Pb(H2O)[Au(CN)(sub 2)](sub 2) has high optical birefringence that is attributed to the anisotropy of the 2-dimensional slabs of 1, with all C triple bond N bonds aligned in the same direction by the polarization lead(II) center.

Pressure-induced phase transitions in single-crystal PbZr0.54Ti0.46O3 are investigated with high-pressure Raman scattering and x-ray single crystal and powder diffraction. The appearance of a Raman peak near 380cm-1 indicates a structural transition at 3 GPa. A second transition, driven by an soft optical phonon, occurs at 9GPa. A third transition occurs above 27 GPa, accompanied by a large changes in the Raman spectrum and splitting of the (pseudo-cubic) (111) and (220) diffraction lines. We identify the transitions as a monoclinic (Cm) to rhombohedral (R3m) transition at 3 GPa, followed by a rhombohedral (R3m) to rhombohedral (R-3c) transition at 9GPa, and a further symmetry-lowering transition at 27 GPa. [ABSTRACT FROM AUTHOR]

Technologically important properties of ferroic materials are determined by their intricate response to external stimuli. This response is driven by distortions of the crystal structure and/or by domain wall motion. Experimental separation of these two mechanisms is a challenging problem which has not been solved so far. Here, we apply X-ray photon correlation spectroscopy (XPCS) to extract the contribution of domain wall dynamics to the overall response. Furthermore, we show how to distinguish the dynamics related to the passing of domain walls through the periodic (Peierls) potential of the crystal lattice and through the random potential caused by lattice defects (pinning centers). The approach involves the statistical analysis of correlations between X-ray speckle patterns produced by the interference of coherent synchrotron X-rays scattered from different nanosize volumes of the crystal and identification of Poisson-type contribution to the statistics. We find such a contribution in the thermally driven response of the monoclinic phase of a ferroelectric PbZr0.55Ti0.45O3 crystal and calculate the number of domain wall jumps in the studied microvolume. [ABSTRACT FROM AUTHOR]

An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 μV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C. [ABSTRACT FROM AUTHOR]

The voltage modulation in spin dynamics via the spin-lattice coupling (SLC) effect has been investigated in epitaxial La0.5Sr0.5MnO3/PMN-PT multiferroic heterostructures. The critical angle for the disappearance of the first exchange (FEX) spin wave has been observed around 67° experimentally and been shifted about 4° by applying an electric field (E-field). In particular, at the critical angle, the FEX spin wave can be switched "on" and "off" by voltages, showing great potential in realizing magnonic devices. Moreover, the FEX spin wave resonance shift of 187 Oe at 173K has been realized by the voltage driven SLC effect, which is a little larger than piezostrain-induced ferromagnetic resonance shift of 169 Oe. The experimental results can be well-explained by the modified Puszkarski spin wave theory. [ABSTRACT FROM AUTHOR]

In this work, multiferroic heterostructures have been prepared by in situ growing oxide magnetic films on ferroelectric single crystal substrates using atomic layer deposition (ALD). Strong interfacial mechanical coupling between the magnetic and ferroelectric phases has been created, arising from the formation of chemical bonds at the interface due to the nature of layer-by-layer self-limiting growth mechanism of the ALD technique. An enhanced magnetoelectric (ME) coupling has been achieved, which allows an electric field to robustly switch magnetic anisotropy up to 780 Oe. In addition, electrical impulse non-volatile tuning of magnetism has also been realized through partially coupled ferroelectric/ferroelastic domain switching. The ALD growth of magnetic oxide films onto ferroelectric substrates provides an effective platform for the preparation of multiferroic heterostructures at low temperatures with an improved ME coupling, demonstrating a great potential for applications in 3D spintronics, microelectronics and data storages. [ABSTRACT FROM AUTHOR]

In this work, we synthesized (Co(t)/Pt)3 multilayers and quantitatively determined thickness and temperature dependence of spin reorientation transition (SRT) and perpendicular magnetic anisotropy (PMA) using ferromagnetic resonance measurement. The critical thickness for PMA switching as well as tremendous magnetic anisotropy change up to 645 Oe once the temperature varies from 25 °C to -153 °C are demonstrated. More interestingly, a four-fold symmetry of magnetic anisotropy was found to be prominent during the SRT. By conducting magnetic simulation with involving high order energy term, we highly related this phenomenon to the strong spinorbital coupling, which is considered to be the major energy term to tip the balance between the surface anisotropy and shape anisotropy. These results provide an opportunity for better understanding the transition behaviors which is essential for PMA structure preparation and their related devices. [ABSTRACT FROM AUTHOR]

In this paper, we present a new approach to the fabrication of integrated silicon-based piezoelectric diaphragm-type biosensors by using sodium potassium niobate-silver niobate (0.82KNN-0.18AN) composite lead-free thin film as the piezoelectric layer. The piezoelectric diaphragms were designed and fabricated by micro-machining technology and chemical solution deposition. The fabricated device was very sensitive to the mass changes caused by various targets attached on the surface of diaphragm. The measured mass sensitivity value was about 931 Hz/µg. Its good performance shows that the piezoelectric diaphragm biosensor can be used as a cost-effective platform for nucleic acid testing. [ABSTRACT FROM AUTHOR]

Morphotropic phase boundary (MPB) in ferroelectric solid solutions can significantly enhance the dielectric and piezoelectric performances of the materials. Similarly, magnetic MPB has been found to exist in a few ferromagnets and is proved to be greatly beneficial to the magnetostrictive response. In this letter, we report the finding of a magnetic MPB in the multiferroic 0.66Bi1-xDyxFeO3-0.34PbTiO3 system, which overlaps the structural MPB of ferroelectric phases. A (weak) ferromagnetic state is induced at room temperature by Dy for the rhombohedral compositions with x≥0.10. Upon cooling down from room temperature, the tetragonal compositions (x≥0.05) show only one magnetic phase transition from the paramagnetic to antiferromagnetic phase, while the rhombohedral compositions exhibit a series of magnetic phase transitions from the (weak) ferromagnetic state to an antiferromagnetic order then to another weak ferromagnetic phase. A magneto-structural phase diagram has been established that reveals the presence of a magnetic MPB and a ferroelectric MPB. More significantly, the ferroelectric and magnetic MPB regions are found to overlap with each other, pointing to interesting kinds of multiferroic couplings. [ABSTRACT FROM AUTHOR]

The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. [ABSTRACT FROM AUTHOR]