241 results on '"Zegrya, G. G."'
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2. Limiting Thickness of Pore Walls Formed in Processes of Anode Etching of Heavily Doped Semiconductors
3. Combustion Rate of Powdered Porous Silicon with Limited Space
4. Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds
5. Piezoelectric Properties of Porous Silicon
6. Laser Effect in the Explosion of Porous Silicon
7. Properties of Two and Three-Component Explosive Compositions Based on Porous Silicon
8. Energy Spectrum of Electrons of Deep Impurity Centers in Wide-Bandgap Mesoscopic Semiconductors
9. Laser Initiation of Energy-Saturated Composites Based on Nanoporous Silicon
10. Mechanosensitivity of Nanoporous Silicon-Based Binary Mixtures
11. Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon
12. Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
13. Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers
14. Intraband Radiation Absorption by Free Holes in GaAs/InGaAs Quantum Wells with Allowance for Nonsphericity of the kP Hamiltonian
15. Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies
16. The Possibilities of Energy-Saturated Nanoporous Silicon-Based Composites (Review and New Results)
17. On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method
18. The Effect of Shungite Additives on Electric Discharge in Ammonium Perchlorate
19. The Mechanism of Generation of Singlet Oxygen in the Presence of Excited Nanoporous Silicon
20. Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well
21. Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
22. Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs
23. Impact ionization rate in direct gap semiconductors
24. Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments
25. Impact sensitivity of energy systems based on nanoporous silicon and oxidant: influence of the hydrogen content and specific surface
26. Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers
27. Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms
28. Nonradiative resonance energy transfer between semiconductor quantum dots
29. Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs0.86Sb0.14/AlSb quantum wells
30. Temperature dependence of the carrier lifetime in Cd x Hg1 − x Te narrow-gap solid solutions with consideration for Auger processes
31. The influence of the nonparabolic energy spectrum of charge carriers on the optical characteristics of AlSb/InAs0.84Sb0.16/AlSb heterostructures with deep quantum wells
32. Optical properties of heterostructures with deep AlSb/InAs0.84Sb0.16/AlSb quantum wells
33. The role of electron-electron interaction in the process of charge-carrier capture in deep quantum wells
34. Quasi-stationary electron states in a multilayered structure in longitudinal electric and transverse magnetic fields
35. A quantum cascade laser in a transverse magnetic field. A model of the open triple-barrier active region
36. Nonradiative resonance energy transfer between two semiconductor quantum dots
37. On the lifetime of charge carriers in quantum dots at low temperatures
38. Optical transitions in Cd x Hg1 − x Te-based quantum wells and their analysis with account for the actual band structure of the material
39. Heisenberg-Dirac-van Vleck vector model for a 1D antiferromagnetic chain of localized spins S = 1
40. Radiative recombination of hot carriers in narrow-gap semiconductors
41. The role of exchange interaction in nonradiative energy transfer between semiconductor quantum dots
42. Effects of the reduction of the dimension of a system upon spin ordering in a degenerate electron gas
43. Carrier energy spectrum and lifetime in quantum dots in electric field
44. Baric properties of InAs quantum dots
45. Peak values of the longitudinal conductivity under integer quantum Hall effect conditions for sharp and smooth chaotic potentials
46. Effects of self-consistent electrostatic potential in quantum wells with several quantum confinement levels in high magnetic fields
47. Enhancement of paramagnetic effects during spin alignment in 2D semiconductors
48. Generation of superradiation in quantum dot nanoheterostructures
49. Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well
50. Theoretical study of auger recombination processes in deep quantum wells
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