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Kinetics of degradation of the nonequilibrium charge carrier lifetime (τ) in Czochralski‐grown (Cz) n‐Si irradiated with 1 MeV electrons at different temperatures in the range from 20 to 285 °C are experimentally and theoretically investigated. It is established that changes in τ are qualitatively and quantitatively determined by the temperature of electron irradiation. Analysis of experimental data using the Shockley‐Read‐Hall (SRH) theory shows that the formation of recombinationally active divacancy‐oxygen (V2O) and vacancy‐oxygen (VO) complexes is the main mechanism of τ degradation in this experiment. [ABSTRACT FROM AUTHOR]

Herein, the results that determine some conditions for increasing the radiation hardness of 60Co gamma or 1 MeV electron‐irradiated tin‐doped n‐type Czochralski silicon (Cz n‐Si:Sn) are presented. These conditions are determined from the analysis of the formation kinetics of dominant radiation defects (namely, VO and SnV complexes) and the recombination of charge carriers through the electronic levels of these defects in samples with different concentrations of phosphorus and tin. It is shown that low‐resistivity Cz n‐Si with P doping levels >5 × 1014 cm−3 containing in addition [Sn] ≈1017–1019 cm−3 has a radiation hardening potential. In this material, the radiation degradation of carrier lifetime is several times smaller compared with Sn‐free n‐Si, whereas the conductivity compensation is negligible for both materials. The reduction of the lifetime degradation rate is due to a reduction of VO concentration in low‐resistivity Cz n‐Si:Sn. [ABSTRACT FROM AUTHOR]

The behavior of the nonequilibrium charge carrier lifetime (τ) in Czochralski‐grown (Cz) n‐Si after a low‐dose 60Co gamma or 1 MeV electron irradiation and subsequent annealing are investigated. Irradiated samples with different doping levels (free‐electron concentration n0 ≈ 1014−1016 cm−3) are isochronally annealed at temperatures between 20 and 380 °C. It is found that τ significantly decreases after annealing in the range ≈180–280 °C, and this effect is stronger in low‐resistivity n‐Si. It is shown that change in τ in the annealing range of 180–380 °C is caused by the divacancy‐oxygen (V2O) complexes. The Shockley–Read–Hall (SRH) theory is used to describe the experimental data. It is determined that the V2O formation is characterized by the activation energy of 1.24 ± 0.04 eV and the frequency factor of (1 ± 0.5) × 109 s−1, and their annealing is characterized by the activation energy of 1.54 ± 0.09 eV and the frequency factor of (2.9 ± 0.6) × 1010 s−1. The values of hole capture cross‐section (σp) by the single‐ and double‐charged acceptor states of V2O are obtained as (5 ± 2) × 10−13 and (8 ± 4) × 10−12 cm2, respectively. [ABSTRACT FROM AUTHOR]