Search

InAs self-assembled quantum dots (QDs) embedded within an InGaAs quantum well have been grown on InP substrate by low-pressure metalorganic vapor phase epitaxy. We find out that the underlying InGaAs layer could affect the dot growth dramatically in terms of size distribution and luminescence efficiency. After inserting a thin GaAs interface layer between the underlying InGaAs and the InAs QD layer, improved dot size uniformity and strong room temperature photoluminescence (PL) up to 2 μm were observed. In the case of InAs QDs with no GaAs layer, one has to reduce InAs QD layer thickness in order to obtain room temperature PL. These results suggest that InAs from the underlying InGaAs layer contribute to the InAs QD formation, and cause the InAs QDs to be non-uniform, but a thin GaAs interface layer could effectively block the migration of In atoms from the InGaAs layer toward InAs QDs, and therefore lead to more uniform QD formation with better luminescence efficiency. [Copyright &y& Elsevier]

Self-assembled InAsSb quantum dots (QD) on (001) InP substrates have been grown using metalorganic vapor phase epitaxy. The dot density and size are found to be strongly dependent on the presence of arsine. Direct deposition of InSb on InP and GaSb substrates formed large islands of InSb with low density of less than 5×10[sup 9]/cm[sup 2], however, InAsSb QDs of density as high as 4×10[sup 10]/cm[sup 2] could be self-assembled by alternating group III and group V precursors, and high density almost pure InSb QDs were achieved on In[sub 0.53]Ga[sub 0.47]As/InP. The formation of high density InAsSb QDs is a result of a local nonequilibrium process and a reduction in mobility of In adatoms on the growth surface due to the presence of arsenic atoms, and in the case of high density almost pure InSb QDs on InGaAs/InP, the InAs interface layer is believed to be responsible. Photoluminescence shows that InSb QDs emit light at room temperature in the range of 1.7–2.2 μm. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 μm up to 25 °C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13% is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm[sup 2]. With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/°C is measured, which is even lower than that caused by the refractive index change. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Abstract High Entropy Alloys are inherently complex and span a vast composition space, making their research and discovery challenging. Developing quantitative predictions of their phase selection requires a large quantity of consistently determined experimental data. Here, we use combinatorial methods to fabricate and characterize 2478 quinary alloys based on Al and transition metals. All data are publicly available at http://materialsatlasproject.org/. Phase selection can be predicted for considered alloys when combining the content of FCC/BCC elements and the constituents' atomic size difference. Mining our data reveals that High Entropy Alloys with increasing atomic size difference prefer BCC structure over FCC. This preference is typically overshadowed by other selection motifs, which dominate during close-to-equilibrium processing. Not suggested by the Hume-Rothery rules, this preference originates from the ability of the BCC structure to accommodate a large atomic size difference with lower strain energy penalty which can be practically only realized in High Entropy Alloys. Graphical abstract Image 1 [ABSTRACT FROM AUTHOR]

Supercapacitors or electrochemical capacitors are receiving greater interest because of their high-power density, long life, and low maintenance. We have synthesized CuS nanoparticles and graphene oxide (CuS–GO) nanocomposites for supercapacitor applications because of their low cost and excellent electrochemical properties. The phase purity of each material was determined using powder XRD studies. The bandgap was determined by UV-visible spectrophotometric studies. Scanning electron microscope and transmission electron microscope images revealed the nano-scale morphology of the synthesized particles. All the electrochemical measurements were conducted in a standard three-electrode configuration, using a platinum wire as the counter electrode and Hg/HgO as the reference electrode. CuS and its composites with graphene oxide on nickel foam were used as working electrodes. All the electrochemical measurements were performed in 3M KOH solution. The CuS–GO nanocomposite electrode showed a specific capacitance of 250 F/g, 225 F/g, 182 F/g, 166 F/g, 161 F/g, and 158 F/g at a current density of 0.5 A/g, 1 A/g, 5 A/g, 10 A/g, 15 A/g, and 20 A/g, respectively. CuS–GO electrodes showed a specific capacitance retention of 70% after 5000 charge–discharge cycles at a current density of 5 A/g. [ABSTRACT FROM AUTHOR]