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Fe2+-doped ZnSe nanoparticles, with varying concentrations of Fe2+ dopants, were prepared by the hydrothermal method and investigated using a multi-technique approach exploiting scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman spectroscopy, as well as measurement of the electrical transport properties and Seebeck coefficient (S). The doped nanoparticles appeared as variable-sized agglomerates on nanocrystallites upon SEM investigation for any doping level. Combined XRD and Raman analyses revealed the occurrence of a cubic structure in the investigated samples. Electric and thermoelectric (TE) transport investigations showed an increase in TE performance with an increase in Fe atom concentrations, which resulted in an enhancement of the power factors from 13 µWm−1K−2 to 120 µWm−1K−2 at room temperature. The results were also dependent on the operating temperature. The maximum power factor of 9 × 10−3 Wm−1K−2 was achieved at 150 °C for the highest explored doping value. The possible applications of these findings were discussed.

The piezoelectric response of ZnO thin films in heterostructure-based devices is strictly related to their structure and morphology. We optimize the fabrication of piezoelectric ZnO to reduce its surface roughness, improving the crystalline quality, taking into consideration the role of the metal electrode underneath. The role of thermal treatments, as well as sputtering gas composition, is investigated by means of atomic force microscopy and x-ray diffraction. The results show an optimal reduction in surface roughness and at the same time a good crystalline quality when 75% O2 is introduced in the sputtering gas and deposition is performed between room temperature and 573 K. Subsequent annealing at 773 K further improves the film quality. The introduction of Ti or Pt as bottom electrode maintains a good surface and crystalline quality. By means of piezoelectric force microscope, we prove a piezoelectric response of the film in accordance with the literature, in spite of the low ZnO thickness and the reduced grain size, with a unipolar orientation and homogenous displacement when deposited on Ti electrode.