1. Chlorine-based inductive coupled plasma etching of α-Ga2O3.
- Author
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Zhe (Ashley) Jian, Yuichi Oshima, Shawn Wright, Kevin Owen, and Elaheh Ahmadi
- Subjects
CHLORINE analysis ,INDUCTIVELY coupled plasma spectrometry ,GALLIUM ,DOPED semiconductors ,PHOTORESISTS - Abstract
Dry etching behavior of unintentionally-doped α-Ga
2 O3 was investigated in a BCl3 /Cl2 /Ar chemistry using inductively-coupled-plasma technique. We systematically studied the impact of various etch conditions such as BCl3 /Cl2 /Ar gas ratio, plasma and bias powers, and chamber pressure on etch rate, surface roughness and mask selectivity of α-Ga2 O3 with respect to Si3 N4 , SiO2 and photoresist. In contrast to GaN etching, Cl2 was found to be far less effective than BCl3 in etching α-Ga2 O3 . [ABSTRACT FROM AUTHOR]- Published
- 2019
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