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216 results on '"Ribes, G"'

4. Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies

Author

Augur, R., Child, C., Ahn, J.H., Tang, T.J., Clevenger, L., Kioussis, D., Masuda, H., Srivastava, R., Oda, Y., Oguma, H., Quon, R., Kim, B., Sheng, H., Hirooka, S., Gupta, R., Thomas, A., Singh, S.M., Fang, Q., Schiwon, R., Hamieh, B., Wornyo, E., Allen, S., Kaltalioglu, E., Ribes, G., Zhang, G., Fryxell, T., Ogino, A., Shimada, E., Aizawa, H., Minda, H., Kim, S.O., Oki, T., Fujii, K., Pallachalil, M., Takewaki, T., Hu, C.K., Sundlof, B., Permana, D., Bolom, T., Engel, B., Labelle, C., Sapp, B., Nogami, T., Simon, A., Shobha, H., Gates, S., Ryan, E.T., Bonilla, G., Daubenspeck, T., Shaw, T., Osborne, G., Grill, A., Edelstein, D., Restaino, D., Molis, S., Spooner, T., Ferreira, P., Biery, G., and Sampson, R.

Published
2012
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14. Cholera in Madagascar

Author

Duval, P, de Ribes, G Champetier, Ranjalahy, J, Quilici, M L, and Fournier, J M

Published
1999

21. Eighth annual meeting of the European Association for the Study of Diabetes: Madrid, Spain September, 6–8, 1972

Author

Alberti, K. G. M. M., Darley, J., Emerson, Pauline M., Hockaday, T. D. R., Amherdt, M., Like, A. A., Blondel, B., Marliss, B., Wollheim, C., Orci, L., Andersen, O. Ortved, Andersson, Arne, Antonini, F. M., Fumagalli, C., Petruzzi, E., Bertini, G., Mori, S., Tinti, P., Ashcroft, S. J. H., Weerasinghe, L. C. C., Randle, P. J., Assan, R., Slusher, N., Guy-Grand, B., Girard, F., Soufflet, E., Attali, J. R., Ballerio, G., Boillot, J., Atkins, T., Matty, A. J., Bailey, C. J., Aynsley-Green, A., Bloom, S. R., Bacchus, R. A., Meade, L. G., London, D. R., Balant, L., Zahnd, G., Petitpierre, B., Fabre, J., Balasse, E. O., Neef, M. A., Barta, L., Brooser, G., Molnar, Maria, Bataille, D. P., Freychet, P., Kitabgi, P., Rosselin, G. E., Berne, Christian, Beyer, J., Cordes, U., Sell, G., Rosak, C., Schöffling, K., Birkner, B., Henner, J., Wagner, P., Erhardt, F., Dieterle, P., Bloom, S. R., Vaughan, N. J. A., Edwards, A. V., Boquist, L., Brand, I., Söling, H. D., Brandenburg, D., Gliemann, J., Ooms, H. A., Puls, W., Wollmer, A., Camerini-Davalos, R. A., Bloodworth, Jr., J. M. B., Limburg, B., Oppermann, W., Campbell, A. K., Siddle, K., Cañadell, J. M., Barraquer, J., Muiños, A., Heredia, C. D., Castillo-Olivares, J., Guijo, J., Pallardo, L. F., Cerasi, E., Efendić, S., Luft, R., Cerasi, E., Wahren, J., Luft, R., Felig, P., Christensen, Niels Juel, Christiansen, A. H., Vølund, A., Connon, J. J., Trimble, E., Copinschi, G., Leclercq, R., Bruno, O. D., Cordes, U., Sell, G., Beyer, J., Haupt, E., Schöffling, K., Creutzfeldt, C., Track, N. S., Cuendet, G. S., Wollheim, C. B., Cameron, D. P., Balant, L., Stauffacher, W., Marliss, E. B., Czyzyk, A., Lao, B., Bartosiewicz, W., Szczepanik, Z., De Nobel, E., Laar, A. Van't, Koene, R. A. P., Benraad, Th. J., Dietze, G., Hepp, K. D., Wickmayr, M., Mehnert, H., Dixon, K., Exon, P. D., Hughes, H. R., Jones, D. W., Elkeles, R. S., Exon, P. D., Dixon, K., FitzGerald, M. G., Malins, J. M., Falorni, A., Massi-Benedetti, F., Gallo, G., Maffei, S., Fedele, D., Tiengo, A., Muggeo, M., Fabris, P., Crepaldi, G., Federlin, K., Helmke, K., Slijepčević, M., Pfeiffer, E. F., Felber, J. P., Oulès, J., Schindler, Ch., Chabot, V., Fernandez-Cruz, Jr., A., Catalán, E., Otero, M. Luque, Hermida, O. Garcia, Otero, M. Luque, Catalán, E., Flatt, J. P., Blackburn, G., Randers, G., Förster, H., Hoos, I, Lerche, D., Förster, H., Hoos, I., Matthäus, M., Franckson, J. R. M., Ooms, H. A., Frerichs, H., Daweke, H., Gries, F., Grüneklee, D., Hessing, J., Jahnke, K., Keup, U., Miss, H., Otto, H., Puls, W., Schmidt, D., Zumfelde, C., Funcke, H. v., Löffler, G., Wieland, O., Galton, D. J., Guttman, R., Gazzola, G. C., Franchi, R., Ronchi, P., Saibene, V., Guidotti, G. G., Gligore, V., Hîncu, N., Tecuceanu, Rodica, Goberna, R., Garcia-Albertos, F., Tamarit-Rodriguez, J., del Rio, E., Roca, R., Gomez-Acebo, José, Creco, A. V., Fedeli, G., Ghirlanda, G., Fenici, R., Lucente, M., Gutman, A., Agam, G., Nahas, N., Cazalis, P., Gylfe, E., Hellman, B., Hadden, D. R., Connolly, J. H., Montgomery, D. A. D., Weaver, J. A., Hellerström, Claes, Howell, Simon, Andersson, Arne, Edwards, John, Sehlin, J., Täljedal, I. -B., Heptner, W., Neubauer, H. B., Herchuelz, A., Pipeleers, D. G., Malaisse, W. J., Herrera, E., Montoya, Eladio, Hommel, H., Fischer, IT., Schmid, B., Fiedler, H., Bibergeil, H., Iversen, J., Iynedjian, P. B., Peters, G., Jacquemin, C., Lambert, B., Sutter, B. Ch. J., Jakob, A., Zapf, J., Froesch, E. R., Jansen, F. K., Freytag, G., Herberg, L., Jarrett, R. J., Baker, I. A., Jarrousse, C., Rancon, F., Rosselin, G. E., Job, D., Tchobroutsky, G., Eschwege, E., Guyot-Argenton, C., Aubry, J. P., Déret, M., Karman, H., Mialhe, P., Kissebah, A., Tulloch, B., Fraser, Russell, Kissebah, A., Tulloch, B., Vydelingum, N., Fraser, Russell, Kissing, J., Raptis, S., Dollinger, H., Faulhaber, J., Rothenbuchner, G., Pfeiffer, E. F., Kleineke, J., Sauer, H., Söling, H. D., Kloeze, J., Kohner, Eva M., Sutcliffe, Barbara A., Tudball, M., Dollery, C. T., Korp, W., Neubert, J., Bruneder, H., Lenhardt, A., Levett, R. E., Koschinsky, T., Gries, F. A., Landgraf-Leurs, M. M. C., Landgraf, R., Hörl, R., Langslow, D. R., Laube, H., Fussgänger, R., Mayer, R., Pfeiffer, E. F., Laube, H., Fussgänger, R., Klör, H., Pfeiffer, E. F., Lázaro, E., Leclercq-Meyer, V., Marchand, J. J., Malaisse, W., Ledet, Thomas, Lefébvre, P. J., Luyckx, A. S., Le Marchand, Y., Assimacopoulos, F., Singh, A., Amherdt, M., Rouiller, Ch., Jeanrenaud, B., Lenti, G., Frezzotti, R., Angotzi, G., Bardelli, A. M., Pagano, G., Basetti-Sani, A., Galli, M., Lernmark, Å., Fex, G., Lindsay, D. G., Loge, O., Lopez-Quijada, C., Chiva, L., Rodriguez-Lopez, M., Loten, E. G., Loubatières, A. L., Loubatières-Mariani, M. M., Ribes, G., Chapal, J., Lubetzki, J., Duprey, J., Sambourg, Cl., Lefebvre, P. J., Maier, V., Hinz, M., Schatz, H., Nierle, C., Pfeiffer, E. F., Malaisse, W. J., Pipeleers, D. G., Malaisse-Lagae, F., Orci, L., Malaisse-Lagae, F., Amherdt, M., Ravazzola, M., Stauffacher, W., Orci, L., Renold, A. E., Manzano, P., Rojas-Hidalgo, E., Marco, J., Diaz-Fierros, D., Calle, C., Roman, D., Villanueva, M. L., Valverde, I., Marliss, E. B., Wollheim, C. B., Blondel, B., Orci, L., Like, A., Amherdt, M., Stauffacher, W., Massi-Benedetti, F., Luycks, A. L., Fracassini, F., Lefebvre, P. J., Falorni, A., Menzel, R., Michaelis, D., Neumann, I., Bibergeil, H., Schulz, B., Wilke, W., Wulfert, P., Krämer, K., Menzinger, G., Fallucca, F., Tamburrano, F., Carratu', R., Andreani, D., Metzger, P., Franken, P., Balasse, E. O., Michael, R., Hildmann, W., Jutzi, E., Michl, J., Fankhauser, S., Schlichtkrull, J., Mirouze, J., Orsetti, A., Vierne, Y., Arnoux, N., Mølsted-Pederson, L., Tygstrup, Inge, Villumsen, Åge L., Pedersen, Jørgen, Montague, W., Howell, S. L., Moody, A. J., Agerbak, G. S., Sundby, F., Muggeo, M., Crepaldi, G., Fedele, D., Baritussio, A., Naeser, Peter, Navalesi, R., Pilo, A., Lenzi, S., Cecchetti, P., Corsini, G., Donato, L., Nerup, J., Andersen, O. Ortved, Bendixen, G., Egeberg, J., Poulsen, J. E., Nielsen, J. Høiriis, Hansen, F. Mølgaard, Gliemann, J., Niki, A., Niki, H., Koide, T., Lin, B. J., Nikkels, R. E., Terpstra, J., Gay, A., Oakman, R. H., Lazarus, Norman R., Orci, L., Amherdt, M., Stauffacher, W., Like, A. A., Rouiller, C., Renold, A. E., Malaisse-Lagae, F., Ravazzola, M., Ostman, J., Backman, L., Cerasi, E., Luft, R., Hallberg, D., Ostrowski, K., Panten, U., Christians, J., Parving, H. -H., Rasmussen, S. Munkgaard, Marichal, M., Platilovà, H., Dufek, M., Konopàsek, E., Pozuelo, V., Tamarit, J., Suner, A., Castell, C., Pruett, E. D. R., Maehlum, S., Raptis, S., Grebe, B., Chrissiku, M., Rothenbuchner, G., Müller, R., Hinze, H. J., Pfeiffer, E. F., Reinauer, H., Müller-Ruchholtz, E. R., Rietzler, X., Passa, P., Canivet, J., Schatz, H., Otto, J., Hinz, M., Maier, V., Nierle, C., Behrens, G., Bücher, T., Pfeiffer, E. F., Schlumpf, U., Morell, B., Zingg, A., Schönborn, J., Westphal, P., Panten, U., Bloom, G. D., Idahl, L. -A., Lernmark, A., Söderberg, M., Rios, M. Serrano, Hawkins, F. G., Escobar, F., Mato, J. M., Larrodera, L., de Oya, M., Rodriguez-Miñon, J. L., Shafrir, E., Gutman, A., Sitbon, G., Mialhe, P., Skrabalo, Z., Panajatović, N., Papić, Z., Posinovec, J., Stavljenić, A., Lipovac, V., Aganović, I., Soler, N. G., Bennett, M. A., Söling, H. D., Peters, H., Janson, G., Sönksen, P. H., Srivastava, M. C., Tompkins, C. V., Nabarro, J. D. N., Sørensen, N. Schwartz, Ladefoged, K., Wildenhoff, K. E., Sorge, F., Diehl, H. -J., Hoffmann, H., Schwartzkopff, W., Standl, E., Kolb, H., Standl, A., Mehnert, H., Sutherland, H. W., Stowers, J. M., Whetham, J. C. G., Sutter, B. C. J., Billaudel, B., Sutter, B. Ch. J., Sutter-Dub, M. T., Leclercq, R., Jacquot, R., Täljedal, I. B., Tamarit, J., Tamarit-Rodriguez, J., Goberna, R., Gobema, R., Tamás, Jr., Gy., Baranyi, Éva, Baranyi, A., Radvanyi, A., Tatoń, J., Hinek, A., Wiśniewska, A., Tattersall, R. B., Pyke, D. A., Terpstra, J., Slot, J. Bruins, Sande, P. L. M. v. d., Radder, J. K., Waldeok, K. J. J., Muijden, R. C. P. A. v., Tiengo, A., Assan, R., Frerichs, H., Creutzfeldt, W., Turner, D. S., Baker, R. W., Gent, W. G. L., Shabaan, A., Marks, V., Young, D. A. B., Vague, Ph., Heim, H., Laval, C. Martin, Vegezzi, M., Campo, C.Di, Rahamandridona, G., Garron, D., Heyraud, B., Vague, J., Valverde, I., Villanueva, M. L., Lozano, I., Diaz-Fierros, M., Marco, J., Van Assche, F. A., Gepts, W., Van Obberghen, E., Somers, G., Devis, G., Vaughan, G. D., Malaisse-Lagae, F., Orci, L., Malaisse, W. J., Veleminsky, J., Spirova, E., Waldhäusl, W., Frisch, H., Haydl, H., Weiss, L., Löffler, G., Wieland, O., Willms, B., Deuticke, U., Wollheim, C. B., Marliss, E. B., Blondel, B., Orci, L., Like, A., Renold, A. E., Zrůstová, M., and Roštlapil, J.

Published
1973
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24. SiO2 interfacial layer as the origin of the breakdown of high-k dielectrics stacks.

Author

Rafik, M., Ribes, G., Roy, D., and Ghibaudd, G.

Subjects
SILICON oxide, DIELECTRICS, ELECTRIC insulators & insulation, ELECTRICAL engineering materials, SUBSTRATES (Materials science)
Abstract

This article investigates the breakdown of high-k/metal gate stacks under substrate injection regime. It is shown that it is initiated by a field driven breakdown of the interfacial layer (IL). Furthermore, because it is very sensitive to IL thickness variations, TBD optimization supposes a control of the high-k deposition process that can induce IL thickness fluctuations. [ABSTRACT FROM AUTHOR]

Published
2009
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25. Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling.

Author

Gerrer, L., Ribes, G., Ghibaudo, G., and Jomaah, J.

Subjects
METAL oxide semiconductors, SEMICONDUCTORS, TRANSISTORS, METAL oxide semiconductor field-effect transistors, FIELD-effect transistors
Abstract

The impact of a soft breakdown-induced leaky weak spot occurring in the channel has been analyzed by two dimensional simulations of a metal oxide semiconductor field effect transistor within the charge sheet approximation. The model proves very efficient in reproducing the device characteristics variations after soft breakdown (SBD) and enables to properly interpret the correlation observed between device parameter shift (e.g., threshold voltage) and stress-induced gate leakage current. A partitioning study allows us to extract an expression for the channel debiasing at Vd>0 and to discriminate each impact of SBD on device characteristics. [ABSTRACT FROM AUTHOR]

Published
2009
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26. New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation.

Author

Parthasarathy, C.R., Denais, M., Huard, V., Ribes, G., Vincent, E., and Bravaix, A.

Abstract

In this paper, we investigate the recovery characteristics associated with negative bias temperature instability and channel hot carrier degradation in p-channel metal-oxide-semiconductor using a novel method of on-the-fly patterns of biases. We demonstrate experimentally that we can identify two types of mechanisms associated with degradation. One of them is associated with recovery dynamics, and the other relates to nonrecoverable degradation. [ABSTRACT FROM PUBLISHER]

Published
2007
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27. Origin of Vt instabilities in high-k dielectrics Jahn-Teller effect or oxygen vacancies.

Author

Ribes, G., Bruyere, S., Roy, D., Parthasarthy, C., Muller, M., Denais, M., Huard, V., Skotnicki, T., and Ghibaudo, G.

Abstract

In this paper, an analysis of the trapping in high- dielectrics and its origin is given. It is found that the defect is consistent with oxygen vacancies in monoclinic hafnia. Finally, guidelines are proposed to reduce these instabilities [ABSTRACT FROM PUBLISHER]

Published
2006
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28. Multi-vibrational hydrogen release: Physical origin of T bd,Q bd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

Author

Ribes, G., Bruyère, S., Denais, M., Monsieur, F., Huard, V., Roy, D., and Ghibaudo, G.

Subjects
*HYDROGEN, *ELECTRIC breakdown, *MICROELECTRONICS, *ELECTRIC discharges
Abstract

Abstract: In this work we report an experimental observation of the current dependence on the defect generation probability driving to breakdown. We propose the MVHR model (multi-vibrational hydrogen release) based on the multi-vibrational excitation of the Si–H bond stretching mode. By this way we explain the power-law dependence of charge and time to breakdown and highlight its limit on PMOS inversion. [Copyright &y& Elsevier]

Published
2005
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29. Review on high-k dielectrics reliability issues.

Author

Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., and Ghibaudo, G.

Abstract

High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their SiO2 counterparts. In this paper we review the status of reliability studies of high-k gate dielectrics and try to illustrate it with experimental results. High-k materials show novel reliability phenomena related to the asymmetric gate band structure and the presence of fast and reversible charge. Reliability of high-k structures is influenced both by the interfacial layer as well as the high-k layer. One of the main issues is to understand these new mechanisms in order to asses the lifetime accurately and reduce them. [ABSTRACT FROM PUBLISHER]

Published
2005
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30. Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide.

Author

Denais, M., Huard, V., Parthasarathy, C., Ribes, G., Perrier, F., Revil, N., and Bravaix, A.

Abstract

This paper gives an insight into the degradation mechanisms during negative and positive bias temperature instabilities in advanced CMOS technology with a 2-nm gate oxide. We focus on generated interface traps and oxide traps to distinguish their dependencies and effects on usual transistor parameters. negative bias temperature instability (NBTI) and positive bias temperature instability in both NMOS and PMOS have been compared and a possible explanation for all configurations has been suggested. Recovery and temperature effect under NBTI were also investigated showing different behaviors of the two components. [ABSTRACT FROM PUBLISHER]

Published
2004
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39. 4-Hydroxyisoleucine: a novel amino acid potentiator of insulin secretion.

Author

Sauvaire, Y, Petit, P, Broca, C, Manteghetti, M, Baissac, Y, Fernandez-Alvarez, J, Gross, R, Roye, M, Leconte, A, Gomis, R, and Ribes, G

Abstract

We report the characterization of a new insulinotropic compound, 4-hydroxyisoleucine. This amino acid has been extracted and purified from fenugreek seeds, which are known in traditional medicine for their antidiabetic properties. 4-Hydroxyisoleucine increases glucose-induced insulin release, in the concentration range of 100 micromol/l to 1 mmol/l, through a direct effect on isolated islets of Langerhans from both rats and humans. The stimulating effect of 4-hydroxyisoleucine was strictly glucose dependent; indeed, ineffective at low (3 mmol/l) or basal (5 mmol/l) glucose concentrations, the amino acid potentiated the insulin secretion induced by supranormal (6.6-16.7 mmol/l) concentrations of glucose. In addition, in the isolated perfused rat pancreas, we could show 1) that the pattern of insulin secretion induced by 4-hydroxyisoleucine was biphasic, 2) that this effect occurred in the absence of any change in pancreatic alpha- and delta-cell activity, and 3) that the more glucose concentration was increased, the more insulin response was amplified. Moreover, 4-hydroxyisoleucine did not interact with other agonists of insulin secretion (leucine, arginine, tolbutamide, glyceraldehyde). Therefore, we conclude that 4-hydroxyisoleucine insulinotropic activity might, at least in part, account for fenugreek seeds' antidiabetic properties. This secretagogue may be considered as a novel drug with potential interest for the treatment of NIDDM. [ABSTRACT FROM AUTHOR]

Published
1998
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