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Using a transnational theoretical framework, this study explores U.S. families expatriating to Guanacaste, Costa Rica in search of educational alternatives to U.S. schooling. In order to meet the needs of this influx of U.S. families to the region, schools such as La Paz Community School in Flamingo, Guanacaste have emerged. This qualitative inquiry explores emergent themes from 16 semi-structured interviews conducted with US parents whose children attend La Paz. Findings reveal participants' desire for a progressive educational alternative for their children that embraces a more collective vision of learning. For interviewees, frustrations with U.S. K-12 schools became symbolic of cultural criticism of US social norms and the desire to recreate a lifestyle removed from daily pressures in the United States.

When visiting Dual Language Immersion (DLI) programs within today's public schools, sociocultural divides and linguistic barriers between parents of each represented language group become quickly recognizable. Should it be a priority of DLI programs to foster intercultural parental relations as a means for improving student learning? If given the opportunity, would DLI parents participate in such initiatives? If successful, could these efforts be implemented beyond DLI programs to impact entire school communities or even communities at large? Drawing upon data gathered from an extensive case study at an elementary school in Virginia, this paper explores the intercultural relations between DLI parents and the need to re-examine the overall purpose of such programs. Findings revealed strong participant motivation to work collaboratively in establishing relationships and supporting DLI learning opportunities that transcend language instruction for their children to include cross-cultural understanding and a commitment to creating more inclusive communities.

Background:Sensory processing difficulties are common across neurodevelopmental disorders. Thus, reliable measures are needed to understand the biological underpinnings of these differences. This study aimed to define a scoring methodology specific to auditory (AOR) and tactile (TOR) over-responsivity. Second, in a pilot cohort using MRI Diffusion Tensor Imaging, we performed a proof of concept study of whether children with AOR showed measurable differences in their white matter integrity. Methods:This study included children with AOR and TOR from a mixed neurodevelopmental disorder cohort including autism and sensory processing dysfunction (n = 176) as well as neurotypical children (n = 128). We established cohorts based on sensory over-responsivity using parent report (Short Sensory Profile (SSP)) and direct assessment (Sensory Processing-Three Dimensions: Assessment (SP-3D:A)) measures. With a subset of the children (n = 39), group comparisons, based on AOR phenotype, were conducted comparing the white matter fractional anisotropy in 23 regions of interest. Results:Using direct assessment, 31% of the children with neurodevelopmental disorders had AOR and 27% had TOR. The inter-test agreement between SSP and SP-3D:A for AOR was 65% and TOR was 50%. Children with AOR had three white matter tracts showing decreased fractional anisotropy relative to children without AOR. Conclusions:This study identified cut-off scores for AOR and TOR using the SSP parent report and SP-3D:A observation. A combination of questionnaire and direct observation measures should be used in clinical and research settings. The SSP parent report and SP-3D:A direct observation ratings overlapped moderately for sensory related behaviors. Based on these preliminary structural neuroimaging results, we suggest a putative neural network may contribute to AOR.

κ-Ga2O3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga2O3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga2O3 and β-Ga2O3 had a relative permittivity of ∼27, a loss tangent below 2%, and high electrical resistivity up to ∼1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga2O3 phase had relative permittivities of ∼18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare κ-Ga2O3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm. [ABSTRACT FROM AUTHOR]

Purpose: Power, policy and politics set the landscape for technocratic approaches in the educational system. Efficiency and money-saving initiatives that adhere to a one-size-fits-all approach drive the response to complex and multifaceted challenges within education. This has been made apparent through the COVID-19 pandemic and its aftermath. This paper aims to explore one of the most pronounced and gaping realities that became evident during this crisis in how the system dehumanizes those in the margins. By not centralizing the biographies of families served in the schools, particularly culturally and linguistically diverse families, the system has failed to capitalize on the assets and affirm their wisdom. Design/methodology/approach: This conceptual paper juxtaposes the technocratic and humanistic approaches of family engagement and provides alternative narratives rooted in authentic cariño (Bartolomé, 2008; Herrera et al., 2020; Valenzuela, 1999) and radical kinship (Boyle, 2017). Findings: Currently, the educational system has sought to address complex issues by attending to the structures (i.e. plexiglass) and instructions (i.e. technology) as a way of responding to life-altering events that are in need of humanistic approaches. Originality/value: The authors ask educators to reflect on the ways that power, policy and politics often stifle opportunities to move outside what is known to transform educational contexts. The authors conclude with critical questions to create new pathways guided by empathy and hope.

Cyclin-dependent kinases (Cdks) are principal drivers of cell division and are an important therapeutic target to inhibit aberrant proliferation. Cdk enzymatic activity is tightly controlled through cyclin interactions, posttranslational modifications, and binding of inhibitors such as the p27 tumor suppressor protein. Spy1/RINGO (Spy1) proteins bind and activate Cdk but are resistant to canonical regulatory mechanisms that establish cell-cycle checkpoints. Cancer cells exploit Spy1 to stimulate proliferation through inappropriate activation of Cdks, yet the mechanism is unknown. We have determined crystal structures of the Cdk2-Spy1 and p27-Cdk2-Spy1 complexes that reveal how Spy1 activates Cdk. We find that Spy1 confers structural changes to Cdk2 that obviate the requirement of Cdk activation loop phosphorylation. Spy1 lacks the cyclin-binding site that mediates p27 and substrate affinity, explaining why Cdk-Spy1 is poorly inhibited by p27 and lacks specificity for substrates with cyclin-docking sites. We identify mutations in Spy1 that ablate its ability to activate Cdk2 and to proliferate cells. Our structural description of Spy1 provides important mechanistic insights that may be utilized for targeting upregulated Spy1 in cancer.

High‐impact practices (HIPs) are educational practices that foster student success. HIPs have not been widely used in cancer education and research despite the need for students to develop key transferable skills and cultivate social responsibility. Our study addresses this need by implementing four community‐based learning HIPs within the context of cancer education and research. Each HIP was classified as having low, moderate, or high alignment with the traits of effective HIPs. Undergraduate science students participated in one to four HIPs as a Feedback Participant, General Volunteer, Student Leader, or Cancer Undergraduate Research and Education (CURES) Class Student. We then studied the effect of these HIPs on students' development of knowledge and skills; career interest and preparedness; and social responsibility. Results from self‐reported questionnaires showed that HIPs increased students' cancer knowledge and developed their transferable and technical skills. Many students reported that these HIPs strongly impacted their career preparedness; positively influenced their interest in pursuing careers in health or biomedical sciences; and encouraged them to participate in community service activities. Thus, these findings provide new insights into the perceived benefits of HIPs in cancer education and research by undergraduate students. [ABSTRACT FROM AUTHOR]

Protein homeostasis depends on many fundamental processes including mRNA synthesis, translation, post-translational modifications, and proteolysis. In the late 70s and early 80s the discovery that the small 76 amino acid protein ubiquitin could be attached to target proteins via amulti-stage process involving ubiquitin-activating enzymes, ubiquitin conjugating enzymes, and ubiquitin ligases, revealed an exciting new post-translational mechanism to regulate protein degradation. This cellular system was uncovered using biochemical methods by Avram Hershko, who would later won the Nobel prize for this discovery; however, the biological functions of ubiquitin ligases remained unknown for many years. It was initially described that ubiquitin modifies proteins at one or more lysine residues and once a long ubiquitin chain was assembled, proteins were degraded by the proteasome. Now we know that proteins can be mono-, multimono-, homotypic poly-, or heterotypic poly-ubiquitylated, each of which confers a specific signal that goes beyond protein degradation regulating additional key cellular functions such as signal transduction, protein localization, recognition of damaged proteins, etc. [ABSTRACT FROM AUTHOR]

Phase transitions in metastable α-, κ(ε)-, and γ-Ga2O3 films to thermodynamically stable β-Ga2O3 during annealing in air, N2, and vacuum have been systematically investigated via in situ high-temperature x-ray diffraction (HT-XRD) and scanning electron microscopy (SEM). These respective polymorphs exhibited thermal stability to ∼471–525 °C, ∼773–825 °C, and ∼490–575 °C before transforming into β-Ga2O3, across all tested ambient conditions. Particular crystallographic orientation relationships were observed before and after the phase transitions, i.e., (0001) α-Ga2O3 → ( 2 ¯ 01) β-Ga2O3, (001) κ(ε)-Ga2O3 → (310) and ( 2 ¯ 01) β-Ga2O3, and (100) γ-Ga2O3 → (100) β-Ga2O3. The phase transition of α-Ga2O3 to β-Ga2O3 resulted in catastrophic damage to the film and upheaval of the surface. The respective primary and possibly secondary causes of this damage are the +8.6% volume expansion and the dual displacive and reconstructive transformations that occur during this transition. The κ(ε)- and γ-Ga2O3 films converted to β-Ga2O3 via singular reconstructive transformations with small changes in volume and unchanged surface microstructures. [ABSTRACT FROM AUTHOR]

Phase and microstructural evolution of gallium oxide (Ga2O3) films grown on vicinal (0001) sapphire substrates was investigated using a suite of analytical tools. High-resolution transmission electron microscopy and scanning transmission electron microscopy of a film grown at 530 °C revealed the initial pseudomorphic growth of three to four monolayers of α-Ga2O3, a 20–60 nm transition layer that contained both β- and γ-Ga2O3, and a top ∼700 nm-thick layer of phase-pure κ-Ga2O3. Explanations for the occurrence of these phases and their sequence of formation are presented. Additional growths of Ga2O3 films in tandem with x-ray diffraction and scanning electron microscopy investigations revealed that the top layer varied in phase composition between ∼100% κ-Ga2O3 and ∼100% β-Ga2O3; the surface microstructure ranged from poorly coalesced to completely coalesced grains as a function of growth temperature, growth rate, or diluent gas flow rate. In general, it was found that the κ-phase is favored at lower growth temperatures and higher triethylgallium flow rates (low VI/III ratios). The growth of nominally single-phase κ-Ga2O3 within the top layer was observed in a temperature range between 500 and 530 °C. Below 470 °C, only amorphous Ga2O3 was obtained; above 570 °C, only the β-phase was deposited. [ABSTRACT FROM AUTHOR]

Introduction: Outcomes for patients with multiple myeloma has significantly improved through the years. This is mainly related to the use of novel agents. Methods: This is a retrospective study that reviewed presentation and outcome of 139 patients with multiple myeloma at the Windsor Essex Regional Cancer Centre from Jan. 1, 2015 to Dec. 31, 2019. Median age was 71 years and most patients had higher risk disease (65.5% either R ISS stage II or III). 30% had high risk FISH for myeloma including del.17P, t (4:14), t (14:16) and Gain (1q21). In terms of presentation, 38.8% had anemia (hemoglobin < 100g/L), 18.7% had hypercalcemia, 74.1% had skeletal lytic lesions, 38.8% had pathologic fracture and 17.3% had plasmacytoma. Results: Almost all (92%) of the patients were treated using at least one novel agent (proteasome inhibitor or immunomodulators [ImiDs]). Cyclophosphamide, bortezomib, and dexamethasone (CyBorD) was the most used treatment regimen (48.9%) followed by bortezomib, melphalan and prednisone (BMP) at 28.8% and lenalidomide, dexamethasone (LenDex) at 14.4%. With respect to response to therapy, 51.8% had at least Very good partial response (VGPR), while 9.4% had progressive disease. 33% had autologous stem cell transplant. After a median follow up of 2.4 years, median overall survival was 3.7 years. 2 years overall survival and relapse-free survival were 70% and 83%, respectively. Discussion: Our study showed comparable outcome for patients with multiple myeloma despite older age and higher risk disease. Outcome is expected to improve with the introduction of more novel agents. [ABSTRACT FROM AUTHOR]

A near-ideal and homogeneous β-Ga2O3 Schottky diode with Co contact for a doping level of ∼4.2 × 1017 cm−3 in the drift layer where the Boltzmann approximation is valid is reported. Unlike Si or GaN, thermionic emission is shown to be the dominant current conduction mechanism in the β-Ga2O3 Schottky diode at this doping level. A wide depletion region appended with a large built-in potential is observed to limit the thermionic field emission current, which is otherwise evident in narrower bandgap semiconductor (such as Si or GaN) Schottky diodes having a similar carrier concentration in the drift region. The results shown in this study can be used to identify the theoretical limits of drift layer doping beyond which the ideality factor and reverse leakage current should start deteriorating in ultra-wide bandgap semiconductor based Schottky diodes. [ABSTRACT FROM AUTHOR]

Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous structure; the film grown at 500 °C contained both β-Ga2O3 and γ-Ga2O3. A nominally phase-pure β-Ga2O3 film was obtained at 530 °C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the γ-Ga2O3 film grown at 470 °C revealed a high density of antiphase boundaries. A planar defect model developed for γ-Al2O3 was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of γ-Ga2O3. The presence of the 180° rotational domains and 90° rotational domains of β-Ga2O3 inclusions within the γ-Ga2O3 matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 °C and the same film annealed at 600 °C. The results led to the hypotheses that (i) incorporation of certain dopants, including Si, Ge, Sn, Mg, Al, and Sc, into β-Ga2O3 locally stabilizes the "γ-phase" and (ii) the site preference(s) for these dopants promotes the formation of "γ-phase" and/or γ-Ga2O3 solid solutions. However, in the absence of such dopants, pure γ-Ga2O3 remains the least stable Ga2O3 polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other Ga2O3 polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between γ-Ga2O3 and β-Ga2O3 than all other polymorphs. [ABSTRACT FROM AUTHOR]

Atomic resolution scanning/transmission electron microscopy (S/TEM) and energy-dispersive x-ray (EDX) analysis were used to determine the effects of annealing at 800–1000 °C in air on Ga2O3 films grown on (100) MgAl2O4 at 650 °C via metal-organic chemical vapor deposition. Annealing resulted in the diffusion of Mg and Al into the films concomitantly with the transformation of β-Ga2O3 to γ-Ga2O3 solid solutions. The minimum atomic percent of Al + Mg that corresponded with the transformation was ∼4.6 at. %. Analyses of atomic-scale STEM images and EDX profiles revealed that the Al and Mg atoms in the γ-Ga2O3 solid solutions occupied octahedral sites; whereas the Ga atoms occupied tetrahedral sites. These site preferences may account for the stabilization of the γ-Ga2O3 solid solutions. [ABSTRACT FROM AUTHOR]

Importance: Adolescents and adults report that their sensory integration and processing differences affect their occupational performance and quality of life, thus requiring effective sensory-focused interventions. Researchers have yet to investigate this population's experience of occupational therapy interventions designed to remediate these challenges. Objective: To explore the perceived experience of adolescents and adults with respect to (1) response to intervention, (2) strategies offered to manage sensory differences, and (3) need for services on completion of an intervention. Design: Retrospective, qualitative study. Setting: Zoom or phone call. Participants: Eleven adolescents and adults with sensory integration and processing differences who had previously completed occupational therapy interventions. Intervention: Sensory-based intervention based on the principles of Ayres Sensory Integration® (ASI) and the Sensory Therapies and Research Frame of Reference. Outcomes and Measures: A semistructured interview to obtain data, followed by an in-depth analysis using an inductive coding process to group initial open codes into themes and common subthemes Results: Open codes were grouped into three core themes: (1) therapist-related factors (what the therapist did in treatment); (2) client-related factors (what the client experienced); and (3) follow-up (future needs of the clients). Four main subthemes of the client–therapist relationship emerged: (1) therapeutic alliance; (2) education and knowledge; (3) strategies, tools, and resources; and (4) future needs. Conclusions and Relevance: This study provides a perspective on the experience of adolescents and adults specific to the impact of a sensory-focused occupational therapy intervention on their daily lives. This will help occupational therapists when designing interventions for current and future clients. What This Article Adds: This study highlights the need for further research addressing effective sensory-based interventions for adolescents and adults. It also captures which components of intervention clients deemed helpful and identifies potential targets for future intervention. This study highlights the need for further research that addresses effective sensory-based occupational therapy interventions for adolescents and adults. It also captures which components of intervention clients deemed helpful and identifies potential targets for future intervention. [ABSTRACT FROM AUTHOR]

Importance: Children with autism spectrum disorder (ASD) face school-related occupational challenges. Attending a mainstream school offers benefits for children's learning and their development of social skills; however, parents express frustration with ensuring their child's unique needs and preferences are met. Objective: To gain insight into parents' experiences with the mainstream preschool and primary educational system for their children with ASD. Data Sources: Eleven electronic databases were systematically searched, and processes were followed according to the Preferred Reporting Items for Systematic Reviews and Meta-Analyses. Study Selection and Data Collection: Study eligibility was determined through the use of selection criteria and paired independent reviewers. Critical appraisal was conducted using a qualitative research hierarchy and a modified version of the Critical Appraisal Skills Programme tool. Two reviewers synthesized the data into themes, following the Joanna Briggs Institute meta-aggregation process. Twenty-six qualitative studies, representing the voices of 397 parents, are presented in this review (spanning 2013–2021). Articles were set in Westernized and non-Westernized settings and represented culturally and linguistically diverse population groups. Findings: Parents of children with ASD reported a lack of awareness and understanding of their children's unique learning needs in the mainstream school system at all levels. Conclusions and Relevance: This review has various occupational therapy practice implications for supporting school-age children with ASD, their parents, and school staff. These include adopting family-centered and ecological approaches, raising awareness, influencing policy, and facilitating collaboration. What This Article Adds: This review provides guidance for occupational therapists working in schools about their practice in working at the individual, targeted, and whole-school levels to address occupational barriers faced by children with ASD. The main implication of this review is that parents perceive a lack of awareness and understanding of the unique learning needs of their children with autism spectrum disorder (ASD) at all school levels. This review offers practice recommendations for occupational therapists working with school-age children with ASD, their parents, and school staff. [ABSTRACT FROM AUTHOR]

Ga2O3 films were deposited on (100) MgAl2O4 spinel substrates at 550, 650, 750, and 850 ° C using metal-organic chemical vapor deposition and investigated using x-ray diffraction and transmission electron microscopy. A phase-pure γ-Ga2O3-based material having an inverse spinel structure was formed at 850 °C; a mixture of the γ-phase and β-Ga2O3 was detected in films grown at 750 ° C. Only β-Ga2O3 was determined in the films deposited at 650 and 550 ° C. A β- to γ-phase transition occurred from the substrate/film interface during growth at 750 ° C. The growth and stabilization of the γ-phase at the outset of film growth at 850 ° C was affected by the substantial Mg and Al chemical interdiffusion from the MgAl2O4 substrate observed in the energy-dispersive x-ray spectrum. Atomic-scale investigations via scanning transmission electron microscopy of the films grown at 750 and 850 ° C revealed a strong tetrahedral site preference for Ga and an octahedral site preference for Mg and Al. It is postulated that the occupation of these atoms in these particular sites drives the β-Ga2O3 to γ-phase transition and markedly enhances the thermal stability of the latter phase at elevated temperatures. [ABSTRACT FROM AUTHOR]

Thin (40–150 nm), highly doped n+ (1019–1020 cm−3) Ga2O3 layers deposited using pulsed laser deposition (PLD) were incorporated into Ti/Au ohmic contacts on (001) and (010) β-Ga2O3 substrates with carrier concentrations between 2.5 and 5.1 × 1018 cm−3. Specific contact resistivity values were calculated for contact structures both without and with a PLD layer having different thicknesses up to 150 nm. With the exception of a 40 nm PLD layer on the (001) substrate, the specific contact resistivity values decreased with increasing PLD layer thickness: up to 8× on (001) Ga2O3 and up to 16× on (010) Ga2O3 compared with samples without a PLD layer. The lowest average specific contact resistivities were achieved with 150 nm PLD layers: 3.48 × 10−5 Ω cm2 on (001) Ga2O3 and 4.79 × 10−5 Ω cm2 on (010) Ga2O3. Cross-sectional transmission electron microscopy images revealed differences in the microstructure and morphology of the PLD layers on the different substrate orientations. This study describes a low-temperature process that could be used to reduce the contact resistance in Ga2O3 devices. [ABSTRACT FROM AUTHOR]

The impact of four computer input devices (mouse, EZ ball, touch pad, touch screen) for 81 preschoolers (ranging from 34 to 78 months of age) and 43 early childhood educators (mean age was 29 years and 9 months) was examined. Participants played two computer games with 10 trials for each game followed by a survey assessing their preferences for the devices. Performance measures examined both accuracy and time to complete components of the game. Measures of motor and cognitive skill also were examined. Educators performed most effectively and efficiently when using the mouse and the EZ ball, but preferred the mouse. Children's performance varied across the devices, with the mouse and EZ ball yielding the most consistent success. In contrast to the educators, children identified the EZ ball as the easiest to use. Measures of motor skill and cognitive ability only were predictive of children's performance using the mouse.

Describes a study conducted at two Canadian universities that surveyed a cross-section of 361 faculty, graduate, and undergraduate students to assess computer availability, experience, attitudes toward computers, and use of computers while engaged in academic writing. Compares advantages and disadvantages of writing on a computer versus written, or hard, copy. (Author/LRW)

We have investigated the thermal stability of Co/Au and Ni/Au Schottky contacts to Sn-doped ( 2 ¯ 01) β-Ga2O3 substrates. Current–voltage (I–V) and capacitance–voltage (C–V) measurements were conducted after sequential annealing treatments totaling > 400 h at 300°C and > 150 h at 500°C in vacuum. For both sets of contacts, the average Schottky barrier heights (SBHs) calculated from the I–V measurements displayed no significant changes and remained within a narrow range throughout the anneals at 300°C. The SBHs calculated from the C–V measurements also remained largely constant for 300°C anneals, except for a modest increase for both contacts for anneal times > 350 h. For 500°C anneals, the I–V characteristics for Ni/Au and Co/Au contacts displayed continual degradation in the electrical behavior after 12 h and 24 h, respectively. Characterizations using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and scanning electron microscopy of the samples annealed at 500°C revealed considerable changes in film morphology, interdiffusion, and phase segregation within the contacts. The results suggest the potential for Co/Au or Ni/Au Schottky contacts to be used in Ga2O3 devices at temperatures below, or possibly up to, 300°C, whereas higher temperatures will require modified metallization schemes. [ABSTRACT FROM AUTHOR]