216 results on '"Pezoldt, J"'
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2. Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001)
3. Comprehensive (S)TEM characterization of polycrystalline GaN/AlN layers grown on LTCC substrates
4. Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
5. Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)
6. High Quality Graphene Grown by Sublimation on 4H-SiC (0001)
7. Foxp3+ T cells expressing RORγt represent a stable regulatory T-cell effector lineage with enhanced suppressive capacity during intestinal inflammation
8. Planar nanowire transistors from two-dimensional materials
9. The intestinal micro-environment imprints stromal cells to promote efficient Treg induction in gut-draining lymph nodes
10. Electrical gating and rectification in graphene three-terminal junctions
11. Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo.
12. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
13. Graphene field effect transistor improvement by graphene–silicon dioxide interface modification
14. Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates
15. AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications
16. Structural characterization of sputtered indium oxide films deposited at room temperature
17. Properties of surface and interface structure of AlN/3C–SiC/Ge/Si (1 1 1) heterostructure
18. Reconstruction of concentration profiles in heterostructures with chemically modified interfaces.
19. Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling
20. Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method
21. PECVD silicon carbide deposited at different temperature
22. Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts
23. Nanoelectromechanical devices for sensing applications
24. Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing
25. Carbon surface diffusion and SiC nanocluster self-ordering
26. Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
27. 5 μm thick 3C-SiC layers grown on Ge-modified Si(100) substrates
28. In Situ Spectroscopic Ellipsometry Studies of The Interaction Process of Ethene With Si Surfaces During Sic Formation
29. The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers
30. Thermal Wave Analysis: A Tool for Non-Invasive Testing in Ion Beam Synthesis of Wide Band Gap Materials
31. On the Entrance Effects and the Influence of Buoyancy Forces on the Fluid Flow in Rtp Reactors
32. Auger investigations of thin SiC films
33. Micro-electromechanical systems based on 3C-SiC/Si heterostructures
34. Growth of three-dimensional SiC clusters on Si modelled by KMC
35. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC
36. Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate
37. The transition from 2D to 3D nanoclusters of silicon carbide on silicon
38. Cubic InN on [formula omitted]-plane sapphire
39. Self-organized SiC nanostructures on silicon
40. In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces
41. Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces
42. Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation
43. SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers
44. Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions
45. Critical island size of the SiC formation on Si(1 0 0) and Si(1 1 1)
46. Characterization of SiC grown on Ge modified silicon substrates
47. Structural and Elasticity-based Properties of SiC-based Interfaces: their Relevance to the Heteroepitaxy of III–V Nitrides
48. On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces
49. (AlN) x(SiC) 1− x buried layers implanted in 6H–SiC: a theoretical study of their optimized composition
50. Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces
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