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Among transition metal oxides, manganites have attracted significant attention because of colossal magnetoresistance (CMR)—a magnetic field-induced metal–insulator transition close to the Curie temperature. CMR is closely related to the ferromagnetic (FM) metallic phase which strongly competes with the antiferromagnetic (AFM) charge ordered (CO) phase, where conducting electrons localize and create a long range order giving rise to insulator-like behavior. One of the major open questions in manganites is the exact origin of this insulating behavior. Here we report a dc resistivity and magnetization study on manganite La1−xCaxMnO3 ceramic samples with different grain size, at the very boundary between CO/AFM insulating and FM metallic phases x=0.5. Clear signatures of variable range hopping (VRH) are discerned in resistivity, implying the disorder-induced (Anderson) localization of conducting electrons. A significant increase of disorder associated with the reduction in grain size, however, pushes the system in the opposite direction from the Anderson localization scenario, resulting in a drastic decrease of resistivity, collapse of the VRH, suppression of the CO/AFM phase and growth of an FM contribution. These contradictory results are interpreted within the standard core-shell model and recent theories of Anderson localization of interacting particles.

Tantalum nitride nanoparticles (NPs) and cubic bixbyite-type Ta2N3 nanocrystals (NCs) were grown in (Ta–N+Al2O3)/Al2O3 periodic multilayers (MLs) after thermal treatment. The MLs were prepared by magnetron deposition at room temperature and characterized using grazing incidence small-angle X-ray scattering (GISAXS), X-ray reflectivity (XRR), grazing incidence X-ray diffraction (GIXRD), secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). We found amorphous tantalum nitride NPs at 600–800 °C, with a high degree of ordering along the surface normal and short-range ordering within the layers containing tantalum (metallic layers). At an even higher annealing temperature of 900 °C the NPs crystallize in the rare and relatively unexplored Ta2N3 phase. However, the environment, morphology and spatial ordering of the NCs depend on the thickness of the metallic layers. For 12 nm thick metallic layers, the Ta2N3 NCs have an average diameter of 6 nm and they are confined and short-range ordered within the metallic layers. When the metallic layers are thinner, the NCs grow over 20 nm in diameter, show no spatial ordering, while the periodic structure of the ML was completely destroyed. The results presented here demonstrate a self-assembly process of tantalum nitride NPs, the morphological properties of which depend on the preparation conditions. This can be used as a generic procedure to realize highly tunable and designable optical properties of thin films containing transition-metal nitride nanocrystals.

The preparation of non-oxidized Ge quantum dot (QD) lattices embedded in Al2O3, Si3N4, SiC matrices by self-assembled growth was studied. The materials were produced by magnetron sputtering deposition, using different substrate temperatures. The deposition regimes leading to the self-assembled growth type and the formation of three-dimensionally ordered Ge QD lattices in different matrices were investigated and determined. The oxidation of the Ge QDs in different matrices was monitored and the best conditions for the production of non-oxidized Ge QDs were found. The optical properties of the Ge QD lattices in different matrices show a strong dependence on the Ge oxidation and the matrix type. [ABSTRACT FROM AUTHOR]