21 results on '"Min, Byungsul"'
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2. 24.2% efficient POLO back junction solar cell with an AlOx/SiNy dielectric stack from an industrial‐scale direct plasma‐enhanced chemical vapor deposition system.
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3. Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells
4. Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells
5. Identifying the location of recombination from voltage-dependent quantum efficiency measurements
6. Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J0e < 10 fA/cm2
7. Optical Constants of UV Transparent EVA and the Impact on the PV Module Output Power under Realistic Irradiation
8. A round Robin-Highliting on the passivating contact technology
9. Limitation of Industrial Phosphorus-diffused Emitters by SRH Recombination
10. On the chances and challenges of combining electron‐collecting nPOLO and hole‐collecting Al‐p+ contacts in highly efficient p‐type c‐Si solar cells.
11. Extended Tauc–Lorentz model (XTL) with log-normal distributed bandgap energies for optical permittivity in polycrystalline semiconductors.
12. Design of Large Poly‐Si on Oxide Interdigitated Back Contact (POLO IBC) Silicon Solar Cells with Local Al–p+ Contacts in the Constraints of Measurement and Module Integration.
13. Sputtered Phosphorus‐Doped poly‐Si on Oxide Contacts for Screen‐Printed Si Solar Cells.
14. Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation.
15. Fully screen‐printed silicon solar cells with local Al‐p+ and n‐type POLO interdigitated back contacts with a VOC of 716 mV and an efficiency of 23%.
16. 716 mV Open‐Circuit Voltage with Fully Screen‐Printed p‐Type Back Junction Solar Cells Featuring an Aluminum Front Grid and a Passivating Polysilicon on Oxide Contact at the Rear Side.
17. A 22.3% Efficient p‐Type Back Junction Solar Cell with an Al‐Printed Front‐Side Grid and a Passivating n+‐Type Polysilicon on Oxide Contact at the Rear Side.
18. Ultra‐Thin Poly‐Si Layers: Passivation Quality, Utilization of Charge Carriers Generated in the Poly‐Si and Application on Screen‐Printed Double‐Side Contacted Polycrystalline Si on Oxide Cells.
19. For none, one, or two polarities—How do POLO junctions fit best into industrial Si solar cells?
20. UV radiation hardness of photovoltaic modules featuring crystalline Si solar cells with AlO x/p+-type Si and SiN y/n+-type Si interfaces.
21. Heavily doped Si:P emitters of crystalline Si solar cells: recombination due to phosphorus precipitation.
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