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With a band gap of 2.4 eV, CdS has been extensively explored for photocatalytic applications under visible light irradiation. In this study, CdS nanoparticles have been investigated for the tribocatalytic degradation of concentrated Rhodamine B (RhB) and methyl orange (MO) solutions. For CdS nanoparticles in a glass beaker, 78.9% of 50 mg/L RhB and 69.8% of 20 mg/L MO solutions were degraded after 8 h and 24 h of magnetic stirring using Teflon magnetic rotary disks, respectively. While for CdS nanoparticles in a beaker with Al2O3 coated on its bottom, 99.8% of the RhB solution was degraded after 8 h of magnetic stirring and 95.6% of the MO solution was degraded after 12 h of magnetic stirring. Moreover, another contrast was observed between the two beaker bottoms—a new peak at 250 nm in UV–visible absorption spectra was only observed for the MO degradation by CdS in the as-received glass beaker, which indicates that MO molecules were only broken into smaller organic molecules in that case. These findings are meaningful for expanding the catalytic applications of CdS and for achieving a better understanding of tribocatalysis as well. [ABSTRACT FROM AUTHOR]

GaN is more stable than most metal oxide semiconductors for the photocatalytic degradation of organic pollutants in harsh conditions, while its catalytic efficiency has been difficult to be substantially improved. In this study, the tribocatalytic degradation of organic dyes by GaN nanoparticles has been investigated. Stimulated through magnetic stirring using homemade Teflon magnetic rotary disks in glass beakers, the GaN nanoparticles were found to induce negligible degradation in rhodamine B (RhB) and methyl orange (MO) solutions. Surprisingly, the degradation was greatly enhanced in beakers with Ti and Al2O3 coatings on their bottoms: 99.2% and 99.8% of the 20 mg/L RhB solutions were degraded in 3 h for the Ti and Al2O3 coatings, respectively, and 56% and 60.2% of the 20 mg/L MO solutions were degraded in 24 h for the Ti and Al2O3 coatings, respectively. Moreover, the MO molecules were only broken into smaller organic molecules for the Ti coating, while they were completely degraded for the Al2O3 coating. These findings are important for the catalytic degradation of organic pollutants by GaN in harsh environments and for achieving a better understanding of tribocatalysis as well. [ABSTRACT FROM AUTHOR]

The intrinsic flexoelectric effect observed in oxide materials often falls below the desired threshold for practical applications. In this work, we demonstrate proton doping in insulating rutile TiO2 crystal as an effective approach to significantly increase flexoelectricity by more than two orders of magnitude. We attribute the noteworthy enhancement of flexoelectricity to the dual impact of proton doping in oxide materials. First, proton doping serves to induce the presence of charge carriers, resulting in the generation of flexoelectric currents. Second, proton doping induces expansion and distortion of the lattice structure, leading to an amplified flexoelectric field when the crystal experiences a strain gradient. The formation of O–H bonding in TiO2 crystal provides another route to break centrosymmetry according to lattice distortion of the TiO2 lattice, resulting in a larger flexoelectric field. In addition, the introduction of proton doping in TiO2 single crystals leads to a substantial increase in photocurrent by effectively flattening the interfacial Schottky junction. This phenomenon results in a three-order of magnitude enhancement of the photocurrent. Our work broadens the horizon of study on dielectric materials through proton doping and may also provide an approach that enables the utilization of dielectric materials in energy conversion applications. [ABSTRACT FROM AUTHOR]

Coating materials on the bottoms of reactors/beakers has emerged as an effective method to regulate tribo-catalytic reactions. In this study, silicon single crystals were coated on the bottoms of glass beakers, in which 30 mg/L methyl orange (MO) solutions suspended with alumina nanoparticles were subjected to magnetic stirring using Teflon magnetic rotary disks. With a gentle rotating speed of 400 rpm for the Teflon disks, the MO solutions were changed from yellow to colorless and the characteristic absorption peak of MO at 450 nm in the UV-Vis spectrum disappeared entirely within 120 min. Mass spectrometry tests were further performed to gain insights into the degradation process, which suggested that the degradation was initiated with the cleavage of the nitrogen-nitrogen double bond in ionized MO molecules by the attack of •OH radicals. Through comparison experiments, we established that the observed degradation was related to the friction between alumina and silicon during magnetic stirring, and hydroxyl and superoxide radicals were formed from the friction, according to electron paramagnetic resonance analysis. It is proposed that electron-hole pairs are excited in silicon single crystals through friction with alumina, which diffuse to the surface of the single crystals and result in the degradation. [ABSTRACT FROM AUTHOR]

The intrinsic flexoelectric effect observed in oxide materials often falls below the desired threshold for practical applications. In this work, we demonstrate proton doping in insulating rutile TiO2 crystal as an effective approach to significantly increase flexoelectricity by more than two orders of magnitude. We attribute the noteworthy enhancement of flexoelectricity to the dual impact of proton doping in oxide materials. First, proton doping serves to induce the presence of charge carriers, resulting in the generation of flexoelectric currents. Second, proton doping induces expansion and distortion of the lattice structure, leading to an amplified flexoelectric field when the crystal experiences a strain gradient. The formation of O–H bonding in TiO2 crystal provides another route to break centrosymmetry according to lattice distortion of the TiO2 lattice, resulting in a larger flexoelectric field. In addition, the introduction of proton doping in TiO2 single crystals leads to a substantial increase in photocurrent by effectively flattening the interfacial Schottky junction. This phenomenon results in a three-order of magnitude enhancement of the photocurrent. Our work broadens the horizon of study on dielectric materials through proton doping and may also provide an approach that enables the utilization of dielectric materials in energy conversion applications. [ABSTRACT FROM AUTHOR]