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Optoelectronic synaptic devices have been regarded as the key component in constructing neuromorphic computing systems. However, the optoelectronic synapses based on conventional 2D transistor are still suffering low photosensitivity and volatile retention behavior, which can affect the recognition accuracy and long-term memory. Here, a novel optoelectronic synaptic device based on surface-state-rich CdSe nanobelt photosensitized 2D MoS2 transistor is demonstrated. Benefiting from the excellent light absorption of CdSe and effective charge trapping at the hetero-interface, the device exhibits not only high photosensitivity but also long retention time (>1,500 s). In addition, typical synaptic functions including the excitatory postsynaptic current, paired-pulse facilitation, the transformation from short-term to long-term plasticity, the transformation from short-term to long-term plasticity, spike-amplitude-dependent plasticity, and learning-forgetting-relearning process are successfully simulated and modulated by light stimulation. Most importantly, an artificial neural network is simulated based on the optical potentiation and electrical habituation characteristics of the synaptic devices, with recognition accuracy rates of 89.2, 93.8, and 91.9 % for file type datasets, small digits, and large digits are achieved. This study demonstrates a simple and efficient way to fabricate highly photosensitive optoelectronic synapse for artificial neural networks by combining the merits of specific materials and device architecture.

The vertical electronic and optoelectronic devices based on 2D materials have shown great advantages over lateral devices, such as higher current density, faster switch speed, and superior short-channel control. However, it is difficult to fabricate vertical device with conventional metal deposition methods due to the aggressive process usually results in damage to the contact region. Here, we develop a simple and effective metal transfer technique and fabricate p-type and n-type WSe2 transistors by using metals with different work functions and subsequently create a vertical WSe2 transistors with a 18-nm-thick channel, which retain good gate coupling effect. Furthermore, a vertical WSe2 photodiode is constructed with graphene and Pt as asymmetric van der Waals (vdW) contacts. The work-function difference between graphene and Pt generates a built-in electric filed, leading to a high current rectification over 105. Under 405 nm laser illumination, the device exhibits excellent self-powered photodetection properties, including a high responsivity of 0.28 A W−1, fast response speed of 24 μs, and large light on/off ratio exceeding 105 at zero bias, which surpass most of the vdW photodiodes. This work demonstrates that the metal transfer technique is a promising strategy for the construction of high-performance vertical optoelectronic devices.

Allergic rhinitis (AR), which presents symptoms like sneezing and a runny nose, is categorized as an upper respiratory condition of type 2. Recent progress in comprehending AR has revealed the significant role played by type 2 cytokines, specifically interleukin (IL)-13, IL-4, and IL-5. These cytokines are released by helper T cells 2 (Th2) and innate lymphoid cells (ILC2s). ILC2s have the ability to interact with various immune cells and are essential in promoting both type 2 immune response and tissue repair, contributing to normal homeostatic functions within the body. This article presents a summary of the latest advancements in comprehending the activity of ILC2s, with particular emphasis on their potential role involvement in AR. It explores how they collaborate with Th2 cells to exacerbate nasal inflammation and interact with regulatory T cells (Tregs) to counteract the suppressive role mediated by Tregs during allergic inflammation. The significance of ILC2s in allergen-specific therapy is highlighted. A comprehensive understanding of ILC2s biology establishes a robust foundation for unraveling the pathogenesis of AR and devising innovative therapeutic approaches for its management. [ABSTRACT FROM AUTHOR]

Electrochromic polymers (ECPs) have great application potential in flexible displays, and there is an increasing expectation of using green methods to form ECP films. Herein, we propose a modified microemulsion method to prepare cyan/magenta/yellow (C/M/Y) water-dispersed electrochromic polymer nanoparticles (WDEN) systems. Three polymer films (WDECP-C/M/Y) maintain similar electrochemical properties compared to their corresponding organic solvent-based polymer films. It is intriguing that WDECP-C/M/Y exhibit better electrochromic properties in terms of higher cycling stability (97.24%, 95.05%, and 52.84%, respectively) and faster switching time (0.94 s, 1.09 s, and 1.34 s for coloring time, respectively) due to the introduction of nanoparticles. In addition, it can achieve various desired colors by blending the C/M/Y WDEN systems in different ratios. The calculated chromaticity coordinates of the blending polymer films show close values to the experimental observation, and the calculated Δ E * ab values range from 2.6 to 10.3, which may provide theoretical guidance for precisely color control. Finally, large-scale and patterned devices were assembled, which can achieve colored-to-colorless reversible electrochromism at a low driving voltage of 0–1.5 V. This work puts forward a universal and environmentally sustainable strategy to prepare WDEN systems, demonstrating their wide range of applications in display devices and electronic tags. [ABSTRACT FROM AUTHOR]

Optoelectronic synaptic devices have been regarded as the key component in constructing neuromorphic computing systems. However, the optoelectronic synapses based on conventional 2D transistor are still suffering low photosensitivity and volatile retention behavior, which can affect the recognition accuracy and long-term memory. Here, a novel optoelectronic synaptic device based on surface-state-rich CdSe nanobelt photosensitized 2D MoS2 transistor is demonstrated. Benefiting from the excellent light absorption of CdSe and effective charge trapping at the hetero-interface, the device exhibits not only high photosensitivity but also long retention time (>1,500 s). In addition, typical synaptic functions including the excitatory postsynaptic current, paired-pulse facilitation, the transformation from short-term to long-term plasticity, the transformation from short-term to long-term plasticity, spike-amplitude-dependent plasticity, and learning-forgetting-relearning process are successfully simulated and modulated by light stimulation. Most importantly, an artificial neural network is simulated based on the optical potentiation and electrical habituation characteristics of the synaptic devices, with recognition accuracy rates of 89.2, 93.8, and 91.9 % for file type datasets, small digits, and large digits are achieved. This study demonstrates a simple and efficient way to fabricate highly photosensitive optoelectronic synapse for artificial neural networks by combining the merits of specific materials and device architecture. [ABSTRACT FROM AUTHOR]

Despite the recognized importance of addressing belief bias in critical thinking, little is known about the neural activity underlying belief-bias reasoning and its connection to critical thinking. The study utilized event-related potentials (ERPs) to examine the neural responses during belief-bias reasoning and explored the extent to which these ERPs explained individual differences in critical thinking. A sample of university students (N = 72) participated in a belief-bias syllogistic reasoning task while their electroencephalographic data were recorded. The task manipulated conflicts between belief and logic within each syllogism. Additionally, participants completed established tests to assess their critical thinking. Our findings revealed that participants with high levels of critical thinking exhibited larger amplitudes of the P600 and late positive component (LPC), indicating enhanced syntactic analysis and relation integration. Moreover, those with high levels of critical thinking displayed smaller N400 amplitudes, suggesting reduced reliance on automatic semantic processing. Notably, participants, especially those with high levels of critical thinking, demonstrated larger late negative component (LNC) amplitudes in response to incongruent syllogisms than to congruent syllogisms, highlighting their heightened capacity to address conflicts between belief and logic. Furthermore, regression analyses indicated that critical thinking relied on both addressing conflicts between belief and logic, as indexed by the LNC, and generating conclusions, as indexed by the P3 components (including both P600 and LPC). These findings contribute to the theoretical understanding of critical thinking by shedding light on the neural processes associated with unbiased reasoning and metacognition, as well as offer implications for assessing critical thinking. Educational Impact and Implications Statement: We discovered that individuals who possess advanced critical thinking skills demonstrate greater brain activity measured by the P600, and late positive component, while exhibiting smaller N400 amplitudes compared to those with lower-level critical thinking skills. Moreover, variations in critical thinking among individuals can be predicted by the late negative component that reflects the resolution of conflicts between belief and logic during syllogistic reasoning, as well as the P3 components that indicate the generation of logical conclusions. These findings suggest that the electroencephalogram signals associated with solving belief-bias reasoning problems are significant indicators of critical thinking. This discovery offers valuable insights into identifying the neurophysiological markers of critical thinking, potentially leading to the creation of more objective and reliable assessment tools for intervention programs aimed at cultivating critical thinking skills. [ABSTRACT FROM AUTHOR]

The difficulty of dyeing is a disturbing problem for the various application of polyimide fabrics. Alkali treatment has been widely used as a preliminary step before dyeing, denoted as a two‐bath method. With more attention being paid to energy resources, this work aims to explore more economical and environmentally friendly dyeing technology, combining the alkali treatment and the dyeing process together, named a one‐bath method. Surprisingly, the K/S value of the one‐bath dyed fabric is much higher than that of the two‐bath sample, in which the red colour value is enhanced by 59.9% for the one‐bath sample. As for the effect of dyeing on the physical properties, the two‐step method has been demonstrated to exert more severe damage on the fibre, with lower crystallinity and tensile strength. To explain such results, it is deduced that when alkali is added together with dyes, it can play a bridge role between the dyes and the fibre, anchoring the dyes wherever the alkali can permeate. Furthermore, 17.25 J of the energy is calculated to be saved for the dyeing of 60 g of fabric, which is very inspiring for large‐scale application. [ABSTRACT FROM AUTHOR]

The systematic study of two ionic porous organic polymers (iPOPs) based on viologens and their first applications in the electrochromic field are reported. The viologen‐based iPOPs are synthesized by electrochemical polymerization with cyano groups, providing a simple and controllable method for iPOPs that solves the film preparation problems common to viologens. After the characterization of these iPOPs, a detailed study of their electrochromic properties is conducted. The iPOP films based on viologens structure exhibit excellent electrochromic properties. In addition, the resulting iPOP films show high sensitivity to electrolyte ions of different sizes in the redox process. Electrochemical and electrochromic data of the iPOPs explain this phenomenon in detail. These results demonstrate that iPOPs of this type are ideal candidates as electrochromic materials due to their inherent porous structures and ion‐rich properties. [ABSTRACT FROM AUTHOR]