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A hollow auxetic cylinder lattice structure (HCLS) is proposed with tapered three-dimensional reentrant cells (TRCs) and connecting plates. The compressive performance of HCLSs is studied by finite element analysis (FEA) and compression test. HCLSs show excellent energy absorption and negative Poisson's ratio properties as well as unique rotational deformation mode during compression. The influences of structural parameters on the compression performance of HCLS are further studied. The values of the maximum rotation angle of H-hs2.0 and minimum negative Poisson's ratio (MPR) of H-la.3 are 37.32 degree and −0.653, respectively. HCLSs exhibit various functional properties and have great potential for application. [ABSTRACT FROM AUTHOR]

In this paper, a novel vertically arranged double-electrodes A0 mode Lamb-wave AlN resonator on SOI substrate with a high electromechanical coupling coefficient and high figure of merit (FOM) is reported. The AlN resonator has a sandwich structure with aluminum and N-type doped silicon as electrode layers and a 500 nm thick AlN film as piezoelectric layer. The resonator has only two electrodes vertically arranged rather than horizontal interdigitated (IDT) electrodes which is common in conventional Lamb-wave resonators. The electrode gaps for the vertically arranged double-electrodes resonators are defined by AlN layer thickness rather than by photolithography for lateral field excitation resonators, which results in higher electric field strength and higher electromechanical coupling efficient ( k t 2 ). Compared with conventional thickness field excitation (TFE) resonators with floating bottom electrodes, the vertically arranged double-electrodes resonators have higher electric field strength as the potential difference is larger between the top electrode and bottom electrode than that between the IDT electrodes and floating electrode. As a result, a higher electromechanical coupling coefficient is achieved. Furthermore, the resonant frequency of the vertically arranged double-electrodes resonator presented in this work can be defined by photolithography by controlling the width of the silicon layer. The k t 2 of the vertically arranged double-electrodes resonator calculated from the measurement results of admittance versus frequency by numerically fitting with the Butterworth Van Dyke model shows an increase by 3.85 times, from 0.073% to 0.281% compared with conventional TFE resonators, and the FOM also increases by three times, from 2.66 to 7.99. This work provides a new structure to design future AlN Lamb-wave resonators on SOI substrate. [ABSTRACT FROM AUTHOR]

The effects of T4, T5, and T6 treatment on the microstructure and mechanical properties of the extruded Mg-4.3Gd-3.2Y-1.2Zn-0.5Zr (wt.%) alloy with a relatively low RE content (7.5 wt.%) were investigated. T4 treatment at 450–500 °C induces a gradual grain growth of α-Mg but an obvious transition of texture component from <0001>⊥ED to <0001>∥ED. Interdendritic LPSO phases are highly stable against annealing while intragranular ones experience dissolution and re-precipitation. After peak-ageing at 200 °C, the elongation of as-extruded and T4 samples is just slightly reduced or even increased due to the weak ageing hardening response. T5 sample exhibits an attractive combination of strength and ductility, with a tensile yield strength (TYS) of 303 MPa and elongation of 20.0%. The Hall–Petch relation for the alloys with or without ageing treatment has been estimated. Grain boundary strengthening rather than precipitation strengthening has the dominant contribution to TYS, and a modified equation is developed to predict grain boundary strengthening values for Mg-Gd-Y-Zn-Zr alloys which contain different Schmid factors for basal slip. [ABSTRACT FROM AUTHOR]