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1,210 results on '"Lin, J. Y."'

1. Precise dd excitations and commensurate intersite Coulomb interactions in the dissimilar cuprates YBa2Cu3O7–y and La2–xSrxCuO4

Author

Huang, Shih-Wen, Wray, L Andrew, Shao, Yu-Cheng, Wu, Cheng-Yau, Wang, Shun-Hung, Lee, Jenn-Min, Chen, Y-J, Schoenlein, RW, Mou, CY, Chuang, Yi-De, and Lin, J-Y

Subjects
Physical Sciences, Condensed Matter Physics, Chemical sciences, Engineering, Physical sciences
Abstract

Using high-resolution extreme ultraviolet resonant inelastic x-ray scattering (EUVRIXS) spectroscopy at the Cu M-edge, we observed doping dependent spectral shifts of interorbital (dd) excitations of YBa2Cu3O7-y and La2-xSrxCuO4. With increasing the hole doping level from undoped to optimally doped superconducting compositions, the leading edge of dd excitations is found to shift towards lower energy loss in a roughly linear trend that is irrespective of the cuprate species. The magnitude of the energy shift can be explained by including a 0.15 eV Coulomb attraction between Cu3d(x2-y2) electrons and the doped holes on the surrounding oxygens in the atomic multiplet calculations. The consistent energy shift between distinct cuprate families suggests that this intersite Coulomb interaction energy scale is relatively material independent, and provides an important reference point for understanding charge density wave phenomena in the cuprate phase diagram.

Published
2023

2. Emergent quasi-two-dimensional metallic state derived from the Mott-insulator framework

Author

Chiang, P-C, Lin, SC, Chiang, C-Y, Ku, C-S, Huang, SW, Lee, JM, Chuang, Y-D, Lin, HJ, Liao, YF, Cheng, C-M, Haw, SC, Chen, JM, Chu, Y-H, H., T, Luo, C-W, Juang, J-Y, Wu, KH, Chang, Y-W, Yang, J-C, and Lin, J-Y

Subjects
Physical Sciences, Condensed Matter Physics, Chemical sciences, Engineering, Physical sciences
Abstract

Recent quasi-two-dimensional (quasi-2D) systems with judicious exploitation of the atomic monolayer or few-layer architecture exhibit unprecedented physical properties that challenge the conventional wisdom on condensed matter physics. Here we show that the infinite layer SrCuO2 (SCO), a topical cuprate Mott insulator in bulk form, can manifest an unexpected metallic state in the quasi-2D limit when SCO is grown on TiO2-terminated SrTiO3 (STO) substrates. The sheet resistance does not conform to Landau's Fermi liquid paradigm. Hard x-ray core-level photoemission spectra demonstrate a definitive Fermi level that resembles the hole doped metal. Soft x-ray absorption spectroscopy also reveals features analogous to those of a hole doped Mott insulator. Based on these results, we conclude that the hole doping does not occur at the interfaces between SCO and STO; instead, it comes from the transient layers between the chain-type and the planar-type structures within the SCO slab. The present work reveals a metallic state in the infinite layer SCO and invites further examination to elucidate the spatial extent of this state.

Published
2023

4. Status of h-BN quasi-bulk crystals and high efficiency neutron detectors.

Author

Alemoush, Z., Tingsuwatit, A., Maity, A., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
NEUTRON counters, THERMAL neutrons, CRYSTAL growth, CRYSTALS, NEUTRON capture, POWER electronics, SCINTILLATORS
Abstract

III-nitrides have fomented a revolution in the lighting industry and are poised to make a huge impact in the field of power electronics. In the III-nitride family, the crystal growth and use of hexagonal BN (h-BN) as an ultrawide bandgap (UWBG) semiconductor are much less developed. Bulk crystals of h-BN produced by the high-temperature/high-pressure and the metal flux solution methods possess very high crystalline and optical qualities but are impractical to serve as substrates or for device implementation as their sizes are typically in millimeters. The development of crystal growth technologies for producing thick epitaxial films (or quasi-bulk or semi-bulk crystals) in large wafer sizes with high crystalline quality is a prerequisite for utilizing h-BN as an UWBG electronic material. Compared to traditional III-nitrides, BN has another unique application as solid-state neutron detectors, which however, also require the development of quasi-bulk crystals to provide high detection efficiencies because the theoretical efficiency (ηi) relates to the detector thickness (d) by η i = 1 − e − d λ , where λ denotes the thermal neutron absorption length which is 47 μm (237 μm) for 10B-enriched (natural) h-BN. We provide an overview and recent progress toward the development of h-BN quasi-bulk crystals via hydride vapor phase epitaxy (HVPE) growth and the attainment of thermal neutron detectors based on 100 μm thick 10B-enriched h-BN with a record efficiency of 60%. The thermal neutron detection efficiency was shown to enhance at elevated temperatures. Benchmarking the crystalline and optical qualities of h-BN quasi-bulk crystals with the state-of-the-art mm-sized bulk crystal flakes and 0.5 μm thick epitaxial films identified that reducing the density of native defects such as vacancies remains the most critical task for h-BN quasi-bulk crystal growth by HVPE. [ABSTRACT FROM AUTHOR]

Published
2024
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5. Polaronic effect in the x-ray absorption spectra of La1−x Ca x MnO3 manganites

Author

Huang, SW, Liu, YT, Lee, JM, Chen, JM, Lee, JF, Schoenlein, RW, Chuang, Y-D, and Lin, J-Y

Subjects
Physical Sciences, Condensed Matter Physics, Biotechnology, colossal magnetoresistance, x-ray absorption, polaron, Materials Engineering, Nanotechnology, Fluids & Plasmas, Materials engineering, Condensed matter physics
Abstract

X-ray absorption spectroscopy (XAS) is performed to study changes in the electronic structures of colossal magnetoresistance (CMR) and charged ordered (CO) La1-x Ca x MnO3 manganites with respect to temperature. The pre-edge features in O and Mn K-edge XAS spectra, which are highly sensitive to the local distortion of MnO6 octahedral, exhibit contrasting temperature dependence between CMR and CO samples. The seemingly counter-intuitive XAS temperature dependence can be reconciled in the context of polarons. These results help identify the most relevant orbital states associated with polarons and highlight the crucial role played by polarons in understanding the electronic structures of manganites.

Published
2019

6. Polaronic effect in the x-ray absorption spectra of La1-x Ca x MnO3 manganites.

Author

Huang, SW, Liu, YT, Lee, JM, Chen, JM, Lee, JF, Schoenlein, RW, Chuang, Y-D, and Lin, J-Y

Subjects
colossal magnetoresistance, x-ray absorption, polaron, Condensed Matter Physics, Materials Engineering, Nanotechnology, Fluids & Plasmas
Abstract

X-ray absorption spectroscopy (XAS) is performed to study changes in the electronic structures of colossal magnetoresistance (CMR) and charged ordered (CO) La1-x Ca x MnO3 manganites with respect to temperature. The pre-edge features in O and Mn K-edge XAS spectra, which are highly sensitive to the local distortion of MnO6 octahedral, exhibit contrasting temperature dependence between CMR and CO samples. The seemingly counter-intuitive XAS temperature dependence can be reconciled in the context of polarons. These results help identify the most relevant orbital states associated with polarons and highlight the crucial role played by polarons in understanding the electronic structures of manganites.

Published
2019

8. Transport properties of h-BN lateral devices.

Author

Somasundaram, G., Tingsuwatit, A., Alemoush, Z., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
NEUTRON counters, BORON nitride, CRYSTAL structure, FREE material, ELECTRICAL resistivity
Abstract

One of the well-established and significant applications of hexagonal boron nitride (h-BN) is in solid-state neutron detectors, which necessitate the development of quasi-bulk h-BN crystals. To advance the material and device development of h-BN, it is essential to characterize its bulk electrical transport properties. However, this task is challenging due to h-BN's ultrawide bandgap (UWBG) of approximately 6.1 eV, which results in an extremely high electrical resistivity, typically exceeding 1012 Ω⋅cm. On the other hand, the mobility-lifetime (μτ) product, a key figure of merit for determining the overall device performance, is more readily accessible through the characterization of the I-V characteristics under illumination. In this study, we investigate the in-plane μτ products of lateral devices fabricated from freestanding quasi-bulk h-BN wafers synthesized by hydride vapor phase epitaxy. Our results reveal an unexpected decrease in the in-plane μτ product as the device width decreases. Utilizing a simple two-region carrier transport model, where the central region of the device represents the bulk h-BN material free from metal contacts and the two edge regions are influenced by metal contacts, we demonstrate that the μτ product in the edge areas covered by metal contacts decreases by nearly two orders of magnitude compared to the bulk value. We attribute this significant reduction in μτ product to the layered crystalline structure of h-BN, which permits metal atoms to infiltrate into the interlayer spacings. As a result, the measured μτ product is significantly lower than the true bulk value. These findings provide valuable insights into the design and fabrication of high-performance h-BN devices, which typically leverage its exceptional in-plane transport properties. [ABSTRACT FROM AUTHOR]

Published
2025
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9. Growth and characterization of high-quality Zr doped AlN epilayers.

Author

Alwan, H., Hossain, N. K., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
X-ray photoelectron spectroscopy, CHEMICAL vapor deposition, ACOUSTIC resonators, LIGHT absorption, SOUND waves
Abstract

AlN stands out for its remarkable figures of merit for electronic and photonic devices, attributed to its ultrawide bandgap of ∼6.1 eV and an exceptionally high critical field of ∼15 MV/cm. More recently, zirconium (Zr) doped AlN (AlN:Zr) has also been identified as a promising material platform for the exploration of solid-state qubits for quantum information and technology, high performance piezoelectric acoustic wave resonators, and optically triggered ultrafast power switching devices facilitated by optically activating Zr related impurities. Despite the significant potential, the ability for producing AlN:Zr epitaxial structures has yet to be established. In this study, we have achieved AlN:Zr epilayers with a high Zr doping level [NZr] of up to 1020 cm−3 using industrial standard metal-organic chemical vapor deposition growth technique. High crystalline quality of AlN:Zr was confirmed by x-ray diffraction, revealing a narrow full width at half maximum of the (002) rocking curve at 216 arcsec for 1.8 μm thick epilayers deposited on sapphire at [NZr]=1020 cm−3. Zr doping was observed to slightly increase the c-lattice constant to 4.992 Å for AlN:Zr (at [NZr]=1020 cm−3) compared to 4.980 Å for undoped AlN. X-ray photoelectron spectroscopy measurement results verified the substitution of Zr at the Al site (ZrAl). The formation of (ZrAl–VN) complexes, which are predicted to possess all the desired properties required by quantum qubits, was confirmed through optical absorption studies. The realization of high-quality AlN:Zr epilayers significantly broadens the scope of technologically significant device applications for AlN. [ABSTRACT FROM AUTHOR]

Published
2025
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11. Fundamental optical transitions in hexagonal boron nitride epilayers.

Author

Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
CHEMICAL vapor deposition, BINDING energy, EMISSION spectroscopy, OPTICAL properties, PHONONS
Abstract

Fundamental optical transitions in hexagonal boron nitride (h-BN) epilayers grown on sapphire by metal–organic chemical vapor deposition (MOCVD) using triethylboron as the boron precursor have been probed by photoluminescence (PL) emission spectroscopy. The low temperature (10 K) PL spectrum exhibits two groups of emission lines. The first group includes the direct observation of the free exciton and impurity bound exciton (BX) transitions and phonon replicas of the BX transition, whereas the second group is attributed to the direct observation of the band-to-band transition and its associated phonon replicas. The observations of zero-phonon lines of the band-to-band and exciton transitions, which are supposedly forbidden or "dark" in perfect h-BN crystals, result from a relaxed requirement of momentum conservation due to symmetry-breaking in the presence of high concentrations of impurities/defects and strain, which in turn provided more deterministic values of the energy bandgap (Eg), exciton binding energy (Ex), and binding energy of impurity bound excitons (EBX) in h-BN epilayers. Excitonic parameters of h-BN epilayers grown by MOCVD, carbon-free chemical vapor deposition, and high purity h-BN bulk materials are compared and discussed. The present results, together with available information in the literature, represent a significant improvement in the understanding of the fundamental optical properties and excitonic parameters of h-BN ultrawide bandgap semiconductors. [ABSTRACT FROM AUTHOR]

Published
2024
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12. Prominent role of oxygen in the multiferroicity of DyMnO3 and TbMnO3: A resonant soft x-ray scattering spectroscopy study

Author

Huang, SW, Lee, JM, Jeng, Horng-Tay, Shao, YuCheng, Wray, L Andrew, Chen, JM, Qiao, R, Yang, WL, Cao, Y, Lin, J-Y, Schoenlein, RW, and Chuang, Y-D

Subjects
Inorganic Chemistry, Chemical Sciences, Physical Sciences, Chemical sciences, Engineering, Physical sciences
Abstract

Oxygen is known to play an important role in the multiferroicity of rare earth manganites; however, how this role changes with rare earth elements is still not fully understood. To address this question, we have used resonant soft x-ray scattering spectroscopy to study the F-type (0,τ,0) diffraction peak from the antiferromagnetic order in DyMnO3 and TbMnO3. We focus on the measurements at O K edge of these two manganites, supplemented by the results at Mn L2 and Dy M5 edge of DyMnO3. We show that the electronic states of different elements are coupled more strongly in DyMnO3 than in TbMnO3, presumably due to the stronger lattice distortion and the tendency to develop E-type antiferromagnetism in the ferroelectric state that promote the orbital hybridization. We also show that the anomaly in the correlation length of (0,τ,0) peak in DyMnO3 signifies the exchange interaction between Mn and rare earth spins. Our findings reveal the prominent role of oxygen orbitals in the multiferroicity of rare earth manganites and the distinct energetics between them.

Published
2016

13. Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa2Cu3O(7-x)/La0.7Ca0.3MnO3 heterostructures.

Author

He, Junfeng, Shafer, Padraic, Mion, Thomas R, Vu, Thanh Tra, He, Qing, Kong, J, Chuang, Y-D, Yang, WL, Graf, MJ, Lin, J-Y, Chu, Y-H, Arenholz, E, and He, Rui-Hua

Subjects
Lanthanoid Series Elements, Copper, Yttrium, X-Ray Diffraction, Electric Conductivity, Electrochemical Techniques, Magnetic Phenomena, cond-mat.str-el, cond-mat.mtrl-sci, cond-mat.supr-con
Abstract

Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa2Cu3O(7-x) (YBCO) thin films grown epitaxially on La0.7Ca0.3MnO3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, with long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.

Published
2016

14. Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa2Cu3O7−x/La0.7Ca0.3MnO3 heterostructures

Author

He, Junfeng, Shafer, Padraic, Mion, Thomas R, Tra, Vu Thanh, He, Qing, Kong, J, Chuang, Y-D, Yang, WL, Graf, MJ, Lin, J-Y, Chu, Y-H, Arenholz, E, and He, Rui-Hua

Subjects
Physical Sciences, Condensed Matter Physics, Copper, Electric Conductivity, Electrochemical Techniques, Lanthanoid Series Elements, Magnetic Phenomena, X-Ray Diffraction, Yttrium, cond-mat.str-el, cond-mat.mtrl-sci, cond-mat.supr-con
Abstract

Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa2Cu3O(7-x) (YBCO) thin films grown epitaxially on La0.7Ca0.3MnO3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, with long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.

Published
2016

15. Selective interlayer ferromagnetic coupling between the Cu spins in YBa2Cu3O7-x grown on top of La0.7Ca0.3MnO3.

Author

Huang, SW, Wray, L Andrew, Jeng, Horng-Tay, Tra, VT, Lee, JM, Langner, MC, Chen, JM, Roy, S, Chu, YH, Schoenlein, RW, Chuang, Y-D, and Lin, J-Y

Subjects
cond-mat.supr-con, cond-mat.mtrl-sci, cond-mat.str-el, Biochemistry and Cell Biology, Other Physical Sciences
Abstract

Studies to date on ferromagnet/d-wave superconductor heterostructures focus mainly on the effects at or near the interfaces while the response of bulk properties to heterostructuring is overlooked. Here we use resonant soft x-ray scattering spectroscopy to reveal a novel c-axis ferromagnetic coupling between the in-plane Cu spins in YBa2Cu3O7-x (YBCO) superconductor when it is grown on top of ferromagnetic La0.7Ca0.3MnO3 (LCMO) manganite layer. This coupling, present in both normal and superconducting states of YBCO, is sensitive to the interfacial termination such that it is only observed in bilayers with MnO2 but not with La0.7Ca0.3O interfacial termination. Such contrasting behaviors, we propose, are due to distinct energetic of CuO chain and CuO2 plane at the La0.7Ca0.3O and MnO2 terminated interfaces respectively, therefore influencing the transfer of spin-polarized electrons from manganite to cuprate differently. Our findings suggest that the superconducting/ferromagnetic bilayers with proper interfacial engineering can be good candidates for searching the theorized Fulde-Ferrel-Larkin-Ovchinnikov (FFLO) state in cuprates and studying the competing quantum orders in highly correlated electron systems.

Published
2015

17. Selective interlayer ferromagnetic coupling between the Cu spins in YBa2Cu3O7−x grown on top of La0.7Ca0.3MnO3

Author

Huang, SW, Wray, L Andrew, Jeng, Horng-Tay, Tra, VT, Lee, JM, Langner, MC, Chen, JM, Roy, S, Chu, YH, Schoenlein, RW, Chuang, Y-D, and Lin, J-Y

Subjects
Physical Sciences, Condensed Matter Physics, cond-mat.supr-con, cond-mat.mtrl-sci, cond-mat.str-el
Abstract

Studies to date on ferromagnet/d-wave superconductor heterostructures focus mainly on the effects at or near the interfaces while the response of bulk properties to heterostructuring is overlooked. Here we use resonant soft x-ray scattering spectroscopy to reveal a novel c-axis ferromagnetic coupling between the in-plane Cu spins in YBa2Cu3O7-x (YBCO) superconductor when it is grown on top of ferromagnetic La0.7Ca0.3MnO3 (LCMO) manganite layer. This coupling, present in both normal and superconducting states of YBCO, is sensitive to the interfacial termination such that it is only observed in bilayers with MnO2 but not with La0.7Ca0.3O interfacial termination. Such contrasting behaviors, we propose, are due to distinct energetic of CuO chain and CuO2 plane at the La0.7Ca0.3O and MnO2 terminated interfaces respectively, therefore influencing the transfer of spin-polarized electrons from manganite to cuprate differently. Our findings suggest that the superconducting/ferromagnetic bilayers with proper interfacial engineering can be good candidates for searching the theorized Fulde-Ferrel-Larkin-Ovchinnikov (FFLO) state in cuprates and studying the competing quantum orders in highly correlated electron systems.

Published
2015

25. Mortality associated with polymyalgia rheumatica in the United States in the 1999-2020 period: a multiple-cause-of-death study.

Author

HUO, R.-X., YANG, Y.-T., LIN, J.-Y., MENG, D.-L., HUANG, R.-J., HUO, X.-C., YANG, Y., HUANG, Y.-J., ZHU, X., WEI, C.-C., and HUANG, X.-X.

Abstract

OBJECTIVE: Multicause-of-death methods were used to analyze mortality and leading causes of death associated with polymyalgia rheumatica (PMR) in the United States from 1999 to 2020. MATERIALS AND METHODS: We analyzed mortality data from the Centers for Disease Control and Prevention (CDC) Data analysis system and selected death certificates that listed PMR as the cause of death based on the International Statistical Classification of Diseases and Related Health Problems (ICD-10) category code. Relevant mortality rates, number of deaths and historical trends were analyzed. The number of PMR-related deaths and age-standardized mortality rate (ASMR) trend charts were made using Excel 2010 version and trend lines were added. RESULTS: Over the last 22 years, the total number of PMR-related deaths in the United States was 15,421 women (89.8%), a ratio of about 1:9 men to women. When PMR is listed as the underlying cause of death, the ASMR for women and men (per 100,000 people) is approximately 1.8-5.1:1, and when it is listed as the non-underlying cause of death, it is 1.8-3.3:1. PMR deaths are more frequent in individuals aged 70 years and above, with patients aged 80 years and above being most affected. Among different ethnicities, the highest number of deaths was found in Caucasians, followed by Black or African American. When it comes to causes of death, heart disease still ranks first, followed by cancer. In addition, we also found that when PMR combined with malignant tumors as a multiple cause of death, the number of female deaths was higher than that of male deaths, the overall number of deaths of both showed an upward trend, and the overall ASMR of both showed a downward trend. CONCLUSIONS: In the past 22 years, we have observed a low mortality rate of PMR in the United States. However, for patients with PMR, especially elderly women, medical workers should be vigilant and pay attention to whether they are combined with other complications, such as malignant neoplasms, and make timely diagnosis and treatment to further reduce the mortality rate of patients with PMR. [ABSTRACT FROM AUTHOR]

Published
2024

26. Properties of photocurrent and metal contacts of highly resistive ultrawide bandgap semiconductors.

Author

Tingsuwatit, A., Hossain, N. K., Alemoush, Z., Almohammad, M., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
SEMICONDUCTORS, SEMICONDUCTOR junctions, INSULATING materials, ELECTRICAL resistivity, METALS, PHOTOCURRENTS
Abstract

Ultrawide bandgap (UWBG) semiconductors inherently exhibit very high electrical resistivities. This property presents not only challenges in probing their electrical transport properties but also difficulties to fabricate, understand, and characterize the electrical properties of metal contacts on these materials. Here, we report the measurements and analysis of the applied electric field dependence of photocurrent to reveal the effect of metal contacts on the transport properties of highly resistive h-BN. Our results indicate that even for h-BN with a room temperature resistivity as high as 1014 Ω cm, the as-deposited metal contact is not a completely blocking type as commonly assumed in previous analyses for other large bandgap insulating materials. By modifying the boundary condition between the metal/semiconductor interface, a quantitative description has been obtained, which can be used to determine if the metal contact is Ohmic or blocking type. This quantitative description should be applicable to all UWBG semiconductors with extremely high electrical resistivities. The work also provides a better understanding of how the metal contact type affects the transport properties of UWBG semiconductors in general. [ABSTRACT FROM AUTHOR]

Published
2024
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27. Carbon-related donor–acceptor pair transition in the infrared in h-BN.

Author

Almohammad, M., Alemoush, Z., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
BRILLOUIN zones, BORON isotopes, BORON nitride, EMISSION spectroscopy, PHONONS, SEMICONDUCTORS
Abstract

Experimental studies of intentionally doped impurities for the understanding of conductivity control in hexagonal boron nitride (h-BN) ultrawide bandgap (UWBG) semiconductor are limited but are highly desired for emerging applications of h-BN. We report synthesis by hydride vapor phase epitaxy and comparison photoluminescence (PL) emission spectroscopy studies of intentionally carbon (C)-doped and undoped h-BN semi-bulk crystals. In addition to the well-known C-related emission lines observed previously, a C-impurity-related transition near 1.31 eV consisting of multiple phonon replicas has been observed in C-doped h-BN at room temperature. Phonon replicas involved in the 1.31 eV emission have been identified using polarization resolve PL spectroscopy as the transverse acoustic (TA)/longitudinal acoustic (LA) and out-of-plane optical phonon (ZO) modes at the middle point, T, between the Γ- and K-points in the first Brillouin zone. Based on the agreement between the spectral peak position of the observed dominant emission line at 1.31 eV and the calculated energy-level separation between CB donor (carbon replacing boron) and Ci acceptor (carbon interstitial), the observed IR emission line can be decisively assigned to the donor–acceptor pair (DAP) transition involving the CB donor and Ci acceptor assisted by the intervalley (Κ → Μ) scattering processes. The results reinforce the perception that C impurities form deep-level centers and provided an improved understanding of C impurities in h-BN. [ABSTRACT FROM AUTHOR]

Published
2024
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28. Prospects of targeting JAK/STAT signal transduction pathways for vasculitis.

Author

HUO, R.-X., YANG, Y.-T., YANG, Y., HUO, X.-C., MENG, D.-L., HUANG, R.-J., HUANG, Y.-J., LIN, J.-Y., ZHU, X., WEI, C.-C., and HUANG, X.-X.

Abstract

Vasculitis is the inflammation of blood vessels caused by autoimmunity and/or autoinflammation, and its etiology and pathogenesis remain largely unknown. The Janus kinase (JAK) and Signal transduction Transcription Activator (STAT) signal transduction pathways are a group of molecules involved in the major pathways by which many cytokines exert and integrate their functions, and their dysregulation has been implicated in the pathogenesis of a variety of autoimmune diseases. However, current data supporting the role of the JAK/ STAT pathway in the development of vasculitis is limited. In terms of treatment, glucocorticoids and immunosuppressants have been the standard therapy. However, because of the huge burden of treatment side effects, people have long waited for new treatment options. JAK inhibitors reduce the production of multiple cytokines and inhibit inflammation by targeting the JAK/STAT pathway, and have the advantage of rapidly acting in oral formulations, reducing glucocorticoid dependence and associated adverse events, especially in refractory cases. Therefore, JAK inhibitors are expected to be a promising drug for the treatment of vasculitis. [ABSTRACT FROM AUTHOR]

Published
2024

31. Probing and controlling oxygen impurity diffusion in h-BN semi-bulk crystals.

Author

Almohammad, M., Tingsuwatit, A., Alemoush, Z., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
METAL organic chemical vapor deposition, NEUTRON counters, OPTOELECTRONIC devices, SEMICONDUCTOR technology, THERMAL neutrons
Abstract

Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies. [ABSTRACT FROM AUTHOR]

Published
2023
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32. Variances in Microstructure Evolution and Mechanical Properties of Dissimilar Steel Welded Joints Produced with Tungsten Inert Gas (TIG) Welding and Laser Beam Welding (LBW).

Author

XU, Y.-L., QIAN, P., LIU, J., LIN, J.-Y., LI, J.-Y., and SHI, M.-X.

Subjects
LASER welding, DISSIMILAR welding, STEEL welding, WELDED joints, NOBLE gases, STAINLESS steel, PENETRATION mechanics
Abstract

Microstructure evolution and physical property differences in tungsten inert gas (TIG) welding and laser beam welding (LBW) with a Nd:YAG laser of Q235 steel and 304 stainless steel in qualified welded joints were obtained through single factor experimental design. The results showed that the microstructure of the weld zone (WZ) is composed of lath martensite, and carbon migration occurred at the interface in the Q235 steel. Under the condition of full penetration of the welded joint, the tensile specimens fractured on the side of Q235 steel, indicating that the strength of the welded joint is higher than that of the Q235 base material (BM). These fracture morphologies presented the characteristics of ductile fracture. The distribution of microhardness in each region of welded joint in terms of heat affected zone (HAZ), BM and WZ was WZ > 304 side HAZ > 304 BM > Q235 side HAZ > Q235 BM. [ABSTRACT FROM AUTHOR]

Published
2023

33. Cardiovascular disease in rheumatoid arthritis: medications and risk factors in China

Author

Li, Chun, Wang, X. R., Ji, H. J., Zhang, X. Y., Li, X. F., Wang, L. Z., Wang, C. H., Wang, Y. F., Yang, Rong, Wang, G. C., Lu, Xin, Zhu, Ping, Chen, L. N., Jin, H. T., Liu, J. T., Liu, X. Y., Sun, Lin, Chen, H. Y., Wei, Ping, Wang, J. X., Cui, L. F., Shu, Rong, Liu, B. L., Zhang, Z. L., Li, G. T., Li, Z. B., Yang, Jing, Li, J. F., Jia, Bin, Zhang, F. X., Tao, J. M., Han, S. L., Lin, J. Y., Wei, M. Q., Liu, X. M., Ke, Dan, Hu, S. X., Ye, Cong, Yang, X. Y., Li, Hao, Huang, C. B., Gao, Ming, Lai, Bei, Li, X. F., Song, L. J., Wang, Yi, Wang, X. Y., Tang, Y. D., Su, Yin, Mu, Rong, and Li, Z. G.

Published
2017
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34. Polarization-resolved Er emission in Er doped GaN bulk crystals.

Author

Sun, Z. Y., Gong, H. L., Yan, Y. Q., Smith, T. B., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
OPTICAL polarization, ACTIVE medium, EMISSION spectroscopy, LIGHT sources, DEPENDENCY (Psychology)
Abstract

Erbium-doped GaN (Er:GaN) quasi-bulk crystals are emerging as a promising novel gain medium for high energy lasers emitting at the retina-safe wavelength window of 1.5 μm. We report the polarization-resolved photoluminescence (PL) emission spectroscopy studies, which revealed that the pumping efficiency with the excitation polarization parallel to the c-axis of GaN (E ⇀ | | c ⇀) is significantly higher than that with the excitation polarization perpendicular to the c-axis of GaN (E ⇀ ⊥ c ⇀). This phenomenon is a direct consequence of the inherent polar wurtzite GaN lattice, giving rise to a net local field, surrounding each Er ion, along the c-axis of GaN. The temperature dependent behaviors of the PL emission spectra were explained in terms of the Boltzmann population distributions among sublevels within the 4I15/2 ground state and the 4I13/2 first excited state of Er3+ in GaN, thereby providing an improved understanding regarding the origin of the dominant emission lines observed near 1.5 μm. The results suggested that the polarization field in GaN can be exploited to enhance the effective Er excitation cross section by manipulating the polarization of the excitation light source. [ABSTRACT FROM AUTHOR]

Published
2020
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35. SEIS: Insight’s Seismic Experiment for Internal Structure of Mars

Author

Lognonné, P., Banerdt, W. B., Giardini, D., Pike, W. T., Christensen, U., Laudet, P., de Raucourt, S., Zweifel, P., Calcutt, S., Bierwirth, M., Hurst, K. J., Ijpelaan, F., Umland, J. W., Llorca-Cejudo, R., Larson, S. A., Garcia, R. F., Kedar, S., Knapmeyer-Endrun, B., Mimoun, D., Mocquet, A., Panning, M. P., Weber, R. C., Sylvestre-Baron, A., Pont, G., Verdier, N., Kerjean, L., Facto, L. J., Gharakanian, V., Feldman, J. E., Hoffman, T. L., Klein, D. B., Klein, K., Onufer, N. P., Paredes-Garcia, J., Petkov, M. P., Willis, J. R., Smrekar, S. E., Drilleau, M., Gabsi, T., Nebut, T., Robert, O., Tillier, S., Moreau, C., Parise, M., Aveni, G., Ben Charef, S., Bennour, Y., Camus, T., Dandonneau, P. A., Desfoux, C., Lecomte, B., Pot, O., Revuz, P., Mance, D., tenPierick, J., Bowles, N. E., Charalambous, C., Delahunty, A. K., Hurley, J., Irshad, R., Liu, Huafeng, Mukherjee, A. G., Standley, I. M., Stott, A. E., Temple, J., Warren, T., Eberhardt, M., Kramer, A., Kühne, W., Miettinen, E.-P., Monecke, M., Aicardi, C., André, M., Baroukh, J., Borrien, A., Bouisset, A., Boutte, P., Brethomé, K., Brysbaert, C., Carlier, T., Deleuze, M., Desmarres, J. M., Dilhan, D., Doucet, C., Faye, D., Faye-Refalo, N., Gonzalez, R., Imbert, C., Larigauderie, C., Locatelli, E., Luno, L., Meyer, J.-R., Mialhe, F., Mouret, J. M., Nonon, M., Pahn, Y., Paillet, A., Pasquier, P., Perez, G., Perez, R., Perrin, L., Pouilloux, B., Rosak, A., Savin de Larclause, I., Sicre, J., Sodki, M., Toulemont, N., Vella, B., Yana, C., Alibay, F., Avalos, O. M., Balzer, M. A., Bhandari, P., Blanco, E., Bone, B. D., Bousman, J. C., Bruneau, P., Calef, F. J., Calvet, R. J., D’Agostino, S. A., de los Santos, G., Deen, R. G., Denise, R. W., Ervin, J., Ferraro, N. W., Gengl, H. E., Grinblat, F., Hernandez, D., Hetzel, M., Johnson, M. E., Khachikyan, L., Lin, J. Y., Madzunkov, S. M., Marshall, S. L., Mikellides, I. G., Miller, E. A., Raff, W., Singer, J. E., Sunday, C. M., Villalvazo, J. F., Wallace, M. C., Banfield, D., Rodriguez-Manfredi, J. A., Russell, C. T., Trebi-Ollennu, A., Maki, J. N., Beucler, E., Böse, M., Bonjour, C., Berenguer, J. L., Ceylan, S., Clinton, J., Conejero, V., Daubar, I., Dehant, V., Delage, P., Euchner, F., Estève, I., Fayon, L., Ferraioli, L., Johnson, C. L., Gagnepain-Beyneix, J., Golombek, M., Khan, A., Kawamura, T., Kenda, B., Labrot, P., Murdoch, N., Pardo, C., Perrin, C., Pou, L., Sauron, A., Savoie, D., Stähler, S., Stutzmann, E., Teanby, N. A., Tromp, J., van Driel, M., Wieczorek, M., Widmer-Schnidrig, R., and Wookey, J.

Published
2019
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40. Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry.

Author

McKay, M. A., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
REFRACTIVE index, BORON nitride, CHEMICAL vapor deposition, ELECTRIC fields, ELLIPSOMETRY
Abstract

The anisotropic index of refraction of 200 μm thick boron-10 enriched hexagonal boron nitride (h-BN) freestanding epilayers grown by metalorganic chemical vapor deposition has been measured using spectroscopic ellipsometry in the UV (4.0–5.1 eV) spectral range. It was found that the index of refraction for the polarization mode with an electric field perpendicular to the c-axis (ordinary, no) is much higher than that with an electric field parallel to the c-axis (extraordinary, ne). By inclusion of turbostratic- (t-) phase layers within h-BN having an average inclination angle (θ) with respect to the ideal c-plane, a simple method for quantifying θ has been deduced. Our results revealed that the presence of t-phase layers decreases the optical anisotropy of h-BN and that a signature of improved crystalline quality is an increase in the ordinary index of refraction (no) as a result of the average incline angle θ approaching 0° and predicted that no = 2.7 and ne = 1.5 at 280 nm for single crystalline h-BN epilayers. More importantly, our results demonstrated that spectroscopic ellipsometry is an effective technique for characterizing the crystalline quality of h-BN epilayers with the advantages of being noninvasive and highly sensitive. [ABSTRACT FROM AUTHOR]

Published
2020
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41. Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology.

Author

Mitchell, B., Timmerman, D., Zhu, W., Lin, J. Y., Jiang, H. X., Poplawsky, J., Ishii, R., Kawakami, Y., Dierolf, V., Tatebayashi, J., Ichikawa, S., and Fujiwara, Y.

Subjects
RARE earth ions, ERBIUM, NEAR-field microscopy, GALLIUM nitride, RARE earth metals, ATOM-probe tomography, HIGH resolution spectroscopy
Abstract

The dopant distribution and surface and structural properties of Er- and Eu-doped GaN samples were investigated using atom probe tomography (APT) and atomic force microscopy (AFM). Erbium accumulation within host GaN threading dislocations was directly detected by APT allowing for the dislocations to be imaged in three dimensions. In addition, photoluminescence spectroscopy with high lateral resolution, by means of scanning near-field optical microscopy, was performed on Eu-doped GaN samples. By combining these results with AFM mappings of the same area, it was concluded that Eu3+ ions also accumulate at threading dislocations. Moreover, high-resolution surface profiles of both samples show that even dilute doping (<0.2%) of Eu and Er has a significant influence on the growth morphology of the GaN host material and the nature of the threading dislocations within it. Transmission electron microscopy techniques were used to show the influence of rare-earth incorporation on the growth of GaN lattice and the propagation of threading dislocations. [ABSTRACT FROM AUTHOR]

Published
2020
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42. Critical thickness of hexagonal GaBN/BN heterostructures.

Author

Wang, Q. W., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
CHEMICAL vapor deposition, PHASE separation, HETEROSTRUCTURES, QUANTUM wells, WURTZITE
Abstract

We report the growth of hexagonal boron gallium nitride alloys, h-GaxB1−xN, on hexagonal boron nitride (h-BN) templates by metalorganic chemical vapor deposition and the observation of the critical thickness (LC) phenomenon in the h-GaBN/BN heterostructure system. It was observed that GaxB1−xN alloys in a pure hexagonal phase can be obtained when the film thickness is below LC. X-ray diffraction (XRD) θ–2θ measurement results revealed the formation of separate wurtzite (w)-GaN domains within the h-GaBN matrix when the film thickness is beyond LC. XRD results were supported by photoluminescence spectroscopy which revealed the absence of the band edge emission of w-GaN near 3.4 eV in very thin layers, but an increase in the w-GaN band edge emission with an increase in the h-GaxB1−xN layer thickness beyond LC. Despite the fact that layered structured materials generally possess a weak interlayer interaction, our results revealed that phase separation still occurs in layered h-GaxB1−xN alloys and the critical thickness depends on the Ga composition. The present study also provided insights into possible ways to synthesize layered GaBN/BN heterostructures and quantum wells in the pure hexagonal phase with tunable bandgaps and optical properties, which would open up many new applications. [ABSTRACT FROM AUTHOR]

Published
2019
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43. Effects of surface recombination on the charge collection in h-BN neutron detectors.

Author

Maity, A., Grenadier, S. J., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
SURFACE recombination, NEUTRON counters, BORON nitride, CHARGE carriers, ELECTRONS
Abstract

Hexagonal boron nitride (h-BN) epilayers have been recognized as a promising material for applications in solid-state neutron detectors. However, the highest detection efficiency of 58% attained so far for 1 mm2 detectors fabricated from 50 μm thick B-10 enriched h-BN films still falls short of the expected theoretical value of 64%. This is due to the less than perfect charge collection efficiency. In this work, we have fabricated and analyzed the photocurrent-voltage characteristics of 11 h-BN neutron detectors. The dependence of the charge collection efficiency (ηc) on the charge carrier mobility-lifetime (μτ) product of the bulk trapping parameter reveals that ηc is nearly perfect at a bias voltage of 200 V if we neglect the effects of surface recombination. Our results have clearly demonstrated that the surface recombination of charge carriers is the dominant factor that prevents a further enhancement in the charge collection efficiency in our current detectors. The surface recombination field ES (=s/μ), defined as the ratio of the surface recombination velocity (s) to the carrier mobility (μ) of holes, was found to have a linear relationship with that of electrons and has a magnitude of the order of 104 V/cm. The present study indicates that it is critical to reduce ES in h-BN in order to further push the charge collection and hence the total detection efficiency of h-BN neutron detectors to 100%. [ABSTRACT FROM AUTHOR]

Published
2019
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44. The Physics of the B Factories

Author

Bevan, A. J., Golob, B., Mannel, Th., Prell, S., Yabsley, B. D., Aihara, H., Anulli, F., Arnaud, N., Aushev, T., Beneke, M., Beringer, J., Bianchi, F., Bigi, I. I., Bona, M., Brambilla, N., Brodzicka, J., Chang, P., Charles, M. J., Cheng, C. H., Cheng, H.-Y., Chistov, R., Colangelo, P., Coleman, J. P., Drutskoy, A., Druzhinin, V. P., Eidelman, S., Eigen, G., Eisner, A. M., Faccini, R., Flood, K. T., Gambino, P., Gaz, A., Gradl, W., Hayashii, H., Higuchi, T., Hulsbergen, W. D., Hurth, T., Iijima, T., Itoh, R., Jackson, P. D., Kass, R., Kolomensky, Yu. G., Kou, E., Križan, P., Kronfeld, A., Kumano, S., Kwon, Y. J., Latham, T. E., Leith, D. W. G. S., Lüth, V., Martinez-Vidal, F., Meadows, B. T., Mussa, R., Nakao, M., Nishida, S., Ocariz, J., Olsen, S. L., Pakhlov, P., Pakhlova, G., Palano, A., Pich, A., Playfer, S., Poluektov, A., Porter, F. C., Robertson, S. H., Roney, J. M., Roodman, A., Sakai, Y., Schwanda, C., Schwartz, A. J., Seidl, R., Sekula, S. J., Steinhauser, M., Sumisawa, K., Swanson, E. S., Tackmann, F., Trabelsi, K., Uehara, S., Uno, S., van de Water, R., Vasseur, G., Verkerke, W., Waldi, R., Wang, M. Z., Wilson, F. F., Zupan, J., Zupanc, A., Adachi, I., Albert, J., Banerjee, Sw., Bellis, M., Ben-Haim, E., Biassoni, P., Cahn, R. N., Cartaro, C., Chauveau, J., Chen, C., Chiang, C. C., Cowan, R., Dalseno, J., Davier, M., Davies, C., Dingfelder, J. C., Echenard, B., Epifanov, D., Fulsom, B. G., Gabareen, A. M., Gary, J. W., Godang, R., Graham, M. T., Hafner, A., Hamilton, B., Hartmann, T., Hayasaka, K., Hearty, C., Iwasaki, Y., Khodjamirian, A., Kusaka, A., Kuzmin, A., Lafferty, G. D., Lazzaro, A., Li, J., Lindemann, D., Long, O., Lusiani, A., Marchiori, G., Martinelli, M., Miyabayashi, K., Mizuk, R., Mohanty, G. B., Muller, D. R., Nakazawa, H., Ongmongkolkul, P., Pacetti, S., Palombo, F., Pedlar, T. K., Piilonen, L. E., Pilloni, A., Poireau, V., Prothmann, K., Pulliam, T., Rama, M., Ratcliff, B. N., Roudeau, P., Schrenk, S., Schroeder, T., Schubert, K. R., Shen, C. P., Shwartz, B., Soffer, A., Solodov, E. P., Somov, A., Starič, M., Stracka, S., Telnov, A. V., Todyshev, K. Yu., Tsuboyama, T., Uglov, T., Vinokurova, A., Walsh, J. J., Watanabe, Y., Won, E., Wormser, G., Wright, D. H., Ye, S., Zhang, C. C., Abachi, S., Abashian, A., Abe, K., Abe, N., Abe, R., Abe, T., Abrams, G. S., Adam, I., Adamczyk, K., Adametz, A., Adye, T., Agarwal, A., Ahmed, H., Ahmed, M., Ahmed, S., Ahn, B. S., Ahn, H. S., Aitchison, I. J. R., Akai, K., Akar, S., Akatsu, M., Akemoto, M., Akhmetshin, R., Akre, R., Alam, M. S., Albert, J. N., Aleksan, R., Alexander, J. P., Alimonti, G., Allen, M. T., Allison, J., Allmendinger, T., Alsmiller, J. R. G., Altenburg, D., Alwyn, K. E., An, Q., Anderson, J., Andreassen, R., Andreotti, D., Andreotti, M., Andress, J. C., Angelini, C., Anipko, D., Anjomshoaa, A., Anthony, P. L., Antillon, E. A., Antonioli, E., Aoki, K., Arguin, J. F., Arinstein, K., Arisaka, K., Asai, K., Asai, M., Asano, Y., Asgeirsson, D. J., Asner, D. M., Aso, T., Aspinwall, M. L., Aston, D., Atmacan, H., Aubert, B., Aulchenko, V., Ayad, R., Azemoon, T., Aziz, T., Azzolini, V., Azzopardi, D. E., Baak, M. A., Back, J. J., Bagnasco, S., Bahinipati, S., Bailey, D. S., Bailey, S., Bailly, P., van Bakel, N., Bakich, A. M., Bala, A., Balagura, V., Baldini-Ferroli, R., Ban, Y., Banas, E., Band, H. R., Banerjee, S., Baracchini, E., Barate, R., Barberio, E., Barbero, M., Bard, D. J., Barillari, T., Barlow, N. R., Barlow, R. J., Barrett, M., Bartel, W., Bartelt, J., Bartoldus, R., Batignani, G., Battaglia, M., Bauer, J. M., Bay, A., Beaulieu, M., Bechtle, P., Beck, T. W., Becker, J., Becla, J., Bedny, I., Behari, S., Behera, P. K., Behn, E., Behr, L., Beigbeder, C., Beiline, D., Bell, R., Bellini, F., Bellodi, G., Belous, K., Benayoun, M., Benelli, G., Benitez, J. F., Benkebil, M., Berger, N., Bernabeu, J., Bernard, D., Bernet, R., Bernlochner, F. U., Berryhill, J. W., Bertsche, K., Besson, P., Best, D. S., Bettarini, S., Bettoni, D., Bhardwaj, V., Bhimji, W., Bhuyan, B., Biagini, M. E., Biasini, M., van Bibber, K., Biesiada, J., Bingham, I., Bionta, R. M., Bischofberger, M., Bitenc, U., Bizjak, I., Blanc, F., Blaylock, G., Blinov, V. E., Bloom, E., Bloom, P. C., Blount, N. L., Blouw, J., Bly, M., Blyth, S., Boeheim, C. T., Bomben, M., Bondar, A., Bondioli, M., Bonneaud, G. R., Bonvicini, G., Booke, M., Booth, J., Borean, C., Borgland, A. W., Borsato, E., Bosi, F., Bosisio, L., Botov, A. A., Bougher, J., Bouldin, K., Bourgeois, P., Boutigny, D., Bowerman, D. A., Boyarski, A. M., Boyce, R. F., Boyd, J. T., Bozek, A., Bozzi, C., Bračko, M., Brandenburg, G., Brandt, T., Brau, B., Brau, J., Breon, A. B., Breton, D., Brew, C., Briand, H., Bright-Thomas, P. G., Brigljević, V., Britton, D. I., Brochard, F., Broomer, B., Brose, J., Browder, T. E., Brown, C. L., Brown, C. M., Brown, D. N., Browne, M., Bruinsma, M., Brunet, S., Bucci, F., Buchanan, C., Buchmueller, O. L., Bünger, C., Bugg, W., Bukin, A. D., Bula, R., Bulten, H., Burchat, P. R., Burgess, W., Burke, J. P., Button-Shafer, J., Buzykaev, A. R., Buzzo, A., Cai, Y., Calabrese, R., Calcaterra, A., Calderini, G., Camanzi, B., Campagna, E., Campagnari, C., Capra, R., Carassiti, V., Carpinelli, M., Carroll, M., Casarosa, G., Casey, B. C. K., Cason, N. M., Castelli, G., Cavallo, N., Cavoto, G., Cecchi, A., Cenci, R., Cerizza, G., Cervelli, A., Ceseracciu, A., Chai, X., Chaisanguanthum, K. S., Chang, M. C., Chang, Y. H., Chang, Y. W., Chao, D. S., Chao, M., Chao, Y., Charles, E., Chavez, C. A., Cheaib, R., Chekelian, V., Chen, A., Chen, E., Chen, G. P., Chen, H. F., Chen, J.-H., Chen, J. C., Chen, K. F., Chen, P., Chen, S., Chen, W. T., Chen, X., Chen, X. R., Chen, Y. Q., Cheng, B., Cheon, B. G., Chevalier, N., Chia, Y. M., Chidzik, S., Chilikin, K., Chistiakova, M. V., Cizeron, R., Cho, I. S., Cho, K., Chobanova, V., Choi, H. H. F., Choi, K. S., Choi, S. K., Choi, Y., Choi, Y. K., Christ, S., Chu, P. H., Chun, S., Chuvikov, A., Cibinetto, G., Cinabro, D., Clark, A. R., Clark, P. J., Clarke, C. K., Claus, R., Claxton, B., Clifton, Z. C., Cochran, J., Cohen-Tanugi, J., Cohn, H., Colberg, T., Cole, S., Colecchia, F., Condurache, C., Contri, R., Convert, P., Convery, M. R., Cooke, P., Copty, N., Cormack, C. M., Dal Corso, F., Corwin, L. A., Cossutti, F., Cote, D., Cotta Ramusino, A., Cottingham, W. N., Couderc, F., Coupal, D. P., Covarelli, R., Cowan, G., Craddock, W. W., Crane, G., Crawley, H. B., Cremaldi, L., Crescente, A., Cristinziani, M., Crnkovic, J., Crosetti, G., Cuhadar-Donszelmann, T., Cunha, A., Curry, S., D’Orazio, A., Dû, S., Dahlinger, G., Dahmes, B., Dallapiccola, C., Danielson, N., Danilov, M., Das, A., Dash, M., Dasu, S., Datta, M., Daudo, F., Dauncey, P. D., David, P., Davis, C. L., Day, C. T., De Mori, F., De Domenico, G., De Groot, N., De la Vaissière, C., de la Vaissière, Ch., de Lesquen, A., De Nardo, G., de Sangro, R., De Silva, A., DeBarger, S., Decker, F. J., del Amo Sanchez, P., Del Buono, L., Del Gamba, V., del Re, D., Della Ricca, G., Denig, A. G., Derkach, D., Derrington, I. M., DeStaebler, H., Destree, J., Devmal, S., Dey, B., Di Girolamo, B., Marco, E. Di, Dickopp, M., Dima, M. O., Dittrich, S., Dittongo, S., Dixon, P., Dneprovsky, L., Dohou, F., Doi, Y., Doležal, Z., Doll, D. A., Donald, M., Dong, L., Dong, L. Y., Dorfan, J., Dorigo, A., Dorsten, M. P., Dowd, R., Dowdell, J., Drásal, Z., Dragic, J., Drummond, B. W., Dubitzky, R. S., Dubois-Felsmann, G. P., Dubrovin, M. S., Duh, Y. C., Duh, Y. T., Dujmic, D., Dungel, W., Dunwoodie, W., Dutta, D., Dvoretskii, A., Dyce, N., Ebert, M., Eckhart, E. A., Ecklund, S., Eckmann, R., Eckstein, P., Edgar, C. L., Edwards, A. J., Egede, U., Eichenbaum, A. M., Elmer, P., Emery, S., Enari, Y., Enomoto, R., Erdos, E., Erickson, R., Ernst, J. A., Erwin, R. J., Escalier, M., Eschenburg, V., Eschrich, I., Esen, S., Esteve, L., Evangelisti, F., Everton, C. W., Eyges, V., Fabby, C., Fabozzi, F., Fahey, S., Falbo, M., Fan, S., Fang, F., Fanin, C., Farbin, A., Farhat, H., Fast, J. E., Feindt, M., Fella, A., Feltresi, E., Ferber, T., Fernholz, R. E., Ferrag, S., Ferrarotto, F., Ferroni, F., Field, R. C., Filippi, A., Finocchiaro, G., Fioravanti, E., Firmino da Costa, J., Fischer, P.-A., Fisher, A.S., Fisher, P. H., Flacco, C. J., Flack, R. L., Flaecher, H. U., Flanagan, J., Flanigan, J. M., Ford, K. E., Ford, W. T., Forster, I. J., Forti, A. C., Forti, F., Fortin, D., Foster, B., Foulkes, S. D., Fouque, G., Fox, J., Franchini, P., Franco Sevilla, M., Franek, B., Frank, E. D., Fransham, K. B., Fratina, S., Fratini, K., Frey, A., Frey, R., Friedl, M., Fritsch, M., Fry, J. R., Fujii, H., Fujikawa, M., Fujita, Y., Fujiyama, Y., Fukunaga, C., Fukushima, M., Fullwood, J., Funahashi, Y., Funakoshi, Y., Furano, F., Furman, M., Furukawa, K., Futterschneider, H., Gabathuler, E., Gabriel, T. A., Gabyshev, N., Gaede, F., Gagliardi, N., Gaidot, A., Gaillard, J.-M., Gaillard, J. R., Galagedera, S., Galeazzi, F., Gallo, F., Gamba, D., Gamet, R., Gan, K. K., Gandini, P., Ganguly, S., Ganzhur, S. F., Gao, Y. Y., Gaponenko, I., Garmash, A., Garra Tico, J., Garzia, I., Gaspero, M., Gastaldi, F., Gatto, C., Gaur, V., Geddes, N. I., Geld, T. L., Genat, J.-F., George, K. A., George, M., George, S., Georgette, Z., Gershon, T. J., Gill, M. S., Gillard, R., Gilman, J. D., Giordano, F., Giorgi, M. A., Giraud, P.-F., Gladney, L., Glanzman, T., Glattauer, R., Go, A., Goetzen, K., Goh, Y. M., Gokhroo, G., Goldenzweig, P., Golubev, V. B., Gopal, G. P., Gordon, A., Gorišek, A., Goriletsky, V. I., Gorodeisky, R., Gosset, L., Gotow, K., Gowdy, S. J., Graffin, P., Grancagnolo, S., Grauges, E., Graziani, G., Green, M. G., Greene, M. G., Grenier, G. J., Grenier, P., Griessinger, K., Grillo, A. A., Grinyov, B.V., Gritsan, A. V., Grosdidier, G., Grosse Perdekamp, M., Grosso, P., Grothe, M., Groysman, Y., Grünberg, O., Guido, E., Guler, H., Gunawardane, N. J. W., Guo, Q. H., Guo, R. S., Guo, Z. J., Guttman, N., Ha, H., Ha, H. C., Haas, T., Haba, J., Hachtel, J., Hadavand, H. K., Hadig, T., Hagner, C., Haire, M., Haitani, F., Haji, T., Haller, G., Halyo, V., Hamano, K., Hamasaki, H., Hamel de Monchenault, G., Hamilton, J., Hamilton, R., Hamon, O., Han, B. Y., Han, Y. L., Hanada, H., Hanagaki, K., Handa, F., Hanson, J. E., Hanushevsky, A., Hara, K., Hara, T., Harada, Y., Harrison, P. F., Harrison, T. J., Harrop, B., Hart, A. J., Hart, P. A., Hartfiel, B. L., Harton, J. L., Haruyama, T., Hasan, A., Hasegawa, Y., Hast, C., Hastings, N. C., Hasuko, K., Hauke, A., Hawkes, C. M., Hayashi, K., Hazumi, M., Hee, C., Heenan, E. 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M., Zhulanov, V., Ziegler, T., Ziegler, V., Zioulas, G., Zisman, M., Zito, M., Zürcher, D., Zwahlen, N., Zyukova, O., Živko, T., and Žontar, D.

Published
2014
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49. Cinematic reflectometry using QIKR, the quite intense kinetics reflectometer.

Author

Ankner, J. F., Ashkar, R., Browning, J. F., Charlton, T. R., Doucet, M., Halbert, C. E., Islam, F., Karim, A., Kharlampieva, E., Kilbey II, S. M., Lin, J. Y. Y., Phan, M. D., Smith, G. S., Sukhishvili, S. A., Thermer, R., Veith, G. M., Watkins, E. B., and Wilson, D.

Subjects
REFLECTOMETRY, REFLECTOMETER, NEUTRON scattering, HYSTERESIS loop, NEUTRON sources
Abstract

The Quite Intense Kinetics Reflectometer (QIKR) will be a general-purpose, horizontal-sample-surface neutron reflectometer. Reflectometers measure the proportion of an incident probe beam reflected from a surface as a function of wavevector (momentum) transfer to infer the distribution and composition of matter near an interface. The unique scattering properties of neutrons make this technique especially useful in the study of soft matter, biomaterials, and materials used in energy storage. Exploiting the increased brilliance of the Spallation Neutron Source Second Target Station, QIKR will collect specular and off-specular reflectivity data faster than the best existing such machines. It will often be possible to collect complete specular reflectivity curves using a single instrument setting, enabling "cinematic" operation, wherein the user turns on the instrument and "films" the sample. Samples in time-dependent environments (e.g., temperature, electrochemical, or undergoing chemical alteration) will be observed in real time, in favorable cases with frame rates as fast as 1 Hz. Cinematic data acquisition promises to make time-dependent measurements routine, with time resolution specified during post-experiment data analysis. This capability will be deployed to observe such processes as in situ polymer diffusion, battery electrode charge–discharge cycles, hysteresis loops, and membrane protein insertion into lipid layers. [ABSTRACT FROM AUTHOR]

Published
2023
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50. Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy.

Author

Alemoush, Z., Hossain, N. K., Tingsuwatit, A., Almohammad, M., Li, J., Lin, J. Y., and Jiang, H. X.

Subjects
NEUTRON counters, CHARGE carrier mobility, THERMAL neutrons, METAL organic chemical vapor deposition, MATERIALS science, NUCLEAR energy, SEMICONDUCTOR detectors, EPITAXY
Abstract

Presently, thermal neutron detectors fabricated from boron-10 enriched hexagonal boron nitride (h-10BN) ultrawide bandgap semiconductor grown by metal organic chemical vapor deposition (MOCVD) hold the record high detection efficiency among all solid-state detectors at 59%. To overcome the short comings of MOCVD growth, including inherently low growth rate and unavoidable impurities such as carbon in metal organic source, we demonstrate here the growth of natural hexagonal boron nitride (h-BN) semi-bulk wafers using halide vapor phase epitaxy (HVPE), which is an established technique for producing GaN semi-bulk crystals at a high growth rate. Electrical transport characterization results revealed that these HVPE grown materials possess an electrical resistivity of 1 × 1013 Ω cm, and a charge carrier mobility and lifetime product of 2 × 10−4 cm2/V s. Detectors fabricated from a 100 μm thick h-BN wafer have demonstrated a thermal neutron detection efficiency of 20%, corresponding to a charge collection efficiency of ∼60% at an operating voltage of 500 V. This initial demonstration opens the door for mass producing high efficiency h-BN semiconductor neutron detectors at a reduced cost, which could create unprecedented applications in nuclear energy, national security, nuclear waste monitoring and management, the health care industry, and material sciences. [ABSTRACT FROM AUTHOR]

Published
2023
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