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Abstract A wearable thermoelectric generator (WTEG) that utilizes human body heat can be a promising candidate for the wearable power generators. The temperature difference (ΔT) between the body and the environment is a stable source driving the WTEG, but this driving force is limited by the ambient temperature itself at the same time. Here, a novel WTEG that can be operated using the dual source of body heat and light with exceptionally high driving force is fabricated. The printable solar absorbing layer attached to the bottom of the WTEG absorbs ≈95% of the light from ultraviolet to far infrared and converts it into heat. To optimize the power density of WTEGs, the fill factor of the thermoelectric (TE) leg/electrode is considered through finite‐difference time‐domain (FDTD) simulation. When operated by the dual sources, the WTEG exhibits a power density of 15.33 µW cm−2, which is the highest under “actual operating conditions” among all kinds of WTEGs. In addition, unlike conventional WTEGs, the WTEG retains 83.1% of its output power at an ambient temperature of 35 °C compared to its output power at room temperature. This study will accelerate the commercialization of WTEGs by introducing a novel method to overcome their limitations.

Grain boundaries in polycrystalline materials may offer the opportunity to explore physical phenomena that do not normally occur within the crystal grains. Here, the authors show that twin boundaries in Bi2Te3works as an electron supply for the whole bulk material.

Single-crystalline CdTe(133) films have been grown by metalorganic chemical vapor deposition on Si(211) substrates. We studied the effect of various growth parameters on the surface morphology and structural quality of CdTe films. Proper oxide removal from the Si substrate is considered to be the principal factor that influences both the morphology and epitaxial quality of the CdTe films. In order to obtain single-crystalline CdTe(133) films, a two-stage growth method was used, i.e., a low-temperature buffer layer step and a high- temperature growth step. Even when the low-temperature buffer layer shows polycrystalline structure, the overgrown layer shows single-crystalline structure. During the subsequent high-temperature growth, two-dimensional crystallites grow faster than other, randomly distributed crystallites in the buffer layer. This is because the capturing of adatoms by steps occurs more easily due to increased adatom mobility. From the viewpoint of crystallographic orientation, it is assumed that the surface structure of Si(211) consists of (111) terrace and (100) step planes with an interplanar angle of 54.8°. This surface structure may provide many preferable nucleation sites for adatoms compared with nominally flat Si(100) or (111) surfaces. The surface morphology of the resulting films shows macroscopic rectangular-shaped terrace—step structures that are considered to be a (111) terrace with two {112} step planes directed toward 〈110〉. [ABSTRACT FROM AUTHOR]