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Spin-mechanical coupling is vital in diverse fields including spintronics, sensing, and quantum transduction. Two-dimensional (2D) magnetic materials provide a unique platform for investigating spin-mechanical coupling, attributed to their mechanical flexibility and novel spin orderings. However, studying their spin-mechanical coupling presents challenges in probing mechanical deformation and thermodynamic property changes at the nanoscale. Here we use nano-optoelectromechanical interferometry to mechanically detect the phase transition and magnetostriction effect in multilayer CrSBr, an air-stable antiferromagnet with large magnon-exciton coupling. The transitions among antiferromagnetism, spin-canted ferromagnetism, and paramagnetism are visualized. Nontrivial magnetostriction coefficient 2.3 × 10 -5 and magnetoelastic coupling strength on the order of 10 6 J/m 3 have been found. Moreover, we demonstrate the substantial tunability of the magnetoelastic constant by nearly 50% via gate-induced strain. Our findings demonstrate the strong spin-mechanical coupling in CrSBr and pave the way for developing sensitive magnetic sensing and efficient quantum transduction at the atomically thin limit.

While the surface-bulk correspondence has been ubiquitously shown in topological phases, the relationship between surface and bulk in Landau-like phases is much less explored. Theoretical investigations since 1970s for semi-infinite systems have predicted the possibility of the surface order emerging at a higher temperature than the bulk, clearly illustrating a counterintuitive situation and greatly enriching phase transitions. But experimental realizations of this prediction remain missing. Here, we demonstrate the higher-temperature surface and lower-temperature bulk phase transitions in CrSBr, a van der Waals (vdW) layered antiferromagnet. We leverage the surface sensitivity of electric dipole second harmonic generation (SHG) to resolve surface magnetism, the bulk nature of electric quadrupole SHG to probe bulk spin correlations, and their interference to capture the two magnetic domain states. Our density functional theory calculations show the suppression of ferromagnetic-antiferromagnetic competition at the surface is responsible for this enhanced surface magnetism. Our results not only show counterintuitive, richer phase transitions in vdW magnets, but also provide viable ways to enhance magnetism in their 2D form., (© 2024. The Author(s).)

van der Waals (vdW) magnets are receiving ever-growing attention nowadays due to their significance in both fundamental research on low-dimensional magnetism and potential applications in spintronic devices. The high crystalline quality of vdW magnets is the key to maintaining intrinsic magnetic and electronic properties, especially when exfoliated down to the two-dimensional limit. Here, ultrahigh-quality air-stable vdW CrSBr crystals are synthesized using the direct solid-vapor synthesis method. The high single crystallinity and spatial homogeneity have been thoroughly evidenced at length scales from submm to atomic resolution by X-ray diffraction, second harmonic generation, and scanning transmission electron microscopy. More importantly, specific heat measurements of ultrahigh-quality CrSBr crystals show three thermodynamic anomalies at 185, 156, and 132 K, revealing a stage-by-stage development of the magnetic order upon cooling, which is also corroborated with the magnetization and transport results. Our ultrahigh-quality CrSBr can further be exfoliated down to monolayers and bilayers easily, providing the building blocks of heterostructures for spintronic and magneto-optoelectronic applications.

Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175-350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N 2 H 4 ) as a metal precursor and nitrogen source, respectively. Highly reactive N 2 H 4 , compared to its conventionally used counterpart, ammonia (NH 3 ), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N 2 H 4 as a replacement for NH 3 is a good alternative due to its stringent thermal budget.

Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiN x ) films remain largely unresearched. Achieving a low WER of a SiN x film is especially significant in its use as an etch stopper for technology beyond 7 nm node semiconductor processing. Herein, we explore the correlation between the hydrogen concentration, hydrogen bonding states, bulk film density, residual impurity concentration, and the WERs of PEALD SiN x using Fourier transform infrared spectrometry, X-ray reflectivity, and spectroscopic ellipsometry, etc. PEALD SiN x films for this study were deposited using hexachlorodisilane and hollow cathode plasma source under a range of process temperatures (270-360 °C) and plasma gas compositions (N 2 /NH 3 or Ar/NH 3 ) to understand the influence of hydrogen concentration, hydrogen bonding states, bulk film density, and residual impurity concentration on the WER. Varying hydrogen concentration and differences in the hydrogen bonding states resulted in different bulk film densities and, accordingly, a variation in WER. We observe a linear relationship between hydrogen bonding concentration and WER as well as a reciprocal relationship between bulk film density and WER. Analogous to the PECVD SiN x processes, a reduction in hydrogen bonding concentration arises from either (1) thermal activation or (2) plasma excited species. However, unlike the case with silane (SiH 4 )-based PECVD SiN x , PEALD SiN x WERs are affected by residual impurities of Si precursors (i.e., chlorine impurity). Thus, possible wet etching mechanisms in HF in which the WER is affected by hydrogen bonding states or residual impurities are proposed. The shifts of amine basicity in SiN x due to different hydrogen bonding states and the changes in Si electrophilicity due to Cl impurity content are suggested as the main mechanisms that influence WER in the PEALD processes.