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Abstract Coherent spin waves possess immense potential in wave-based information computation, storage, and transmission with high fidelity and ultra-low energy consumption. However, despite their seminal importance for magnonic devices, there is a paucity of both structural prototypes and theoretical frameworks that regulate the spin current transmission and magnon hybridization mediated by coherent spin waves. Here, we demonstrate reconfigurable coherent spin current transmission, as well as magnon–magnon coupling, in a hybrid ferrimagnetic heterostructure comprising epitaxial Gd3Fe5O12 and Y3Fe5O12 insulators. By adjusting the compensated moment in Gd3Fe5O12, magnon–magnon coupling was achieved and engineered with pronounced anticrossings between two Kittel modes, accompanied by divergent dissipative coupling approaching the magnetic compensation temperature of Gd3Fe5O12 (T M,GdIG), which were modeled by coherent spin pumping. Remarkably, we further identified, both experimentally and theoretically, a drastic variation in the coherent spin wave-mediated spin current across T M,GdIG, which manifested as a strong dependence on the relative alignment of magnetic moments. Our findings provide significant fundamental insight into the reconfiguration of coherent spin waves and offer a new route towards constructing artificial magnonic architectures.

Abstract Ge-based alloys have drawn great interest as promising materials for their superior visible to infrared photoelectric performances. In this study, we report the preparation and optical properties of germanium-bismuth (Ge1-xBix) thin films by using molecular beam epitaxy (MBE). GeBi thin films belong to the n-type conductivity semiconductors, which have been rarely reported. With the increasing Bi-doping content from 2 to 22.2%, a series of Ge1-xBix thin film samples were obtained and characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. With the increase of Bi content, the mismatch of lattice constants increases, and the GeBi film shifts from direct energy band-gaps to indirect band-gaps. The moderate increase of Bi content reduces optical reflectance and promotes the transmittance of extinction coefficient in infrared wavelengths. The absorption and transmittance of GeBi films in THz band increase with the increase of Bi contents.

Converting charge to spin currents using spin–orbit interactions has useful applications in spintronics but symmetry constraints can limit the control over spin polarization. Here the authors demonstrate spin–orbit effects with a different symmetry, which could help generate arbitrary spin polarizations.

Abstract Spin Seebeck effect (SSE) measured for metallic ferromagnetic thin films in commonly used longitudinal configuration contains the contribution from anomalous Nernst effect (ANE). The ANE is considered to arise from the bulk of the ferromagnet (FM) and the proximity-induced FM boundary layer. We fabricate a FM alloy with zero Nernst coefficient to mitigate the ANE contamination of SSE and insert a thin layer of Cu to separate the heavy metal (HM) from the FM to avoid the proximity contribution. These modifications to the experiment should permit complete isolation of SSE from ANE in the longitudinal configuration. However, further thickness dependence studies and careful analysis of the results revealed, ANE contribution of the isolated FM alloy is twofold, surface and bulk. Both surface and bulk contributions, whose magnitudes are comparable to that of the SSE, can be modified by the neighboring layer. Hence surface contribution to the ANE in FM metals is an important effect that needs to be considered.

Abstarct Graphene has sparked extensive research interest for its excellent physical properties and its unique potential for application in absorption of electromagnetic waves. However, the processing of stable large-scale graphene and magnetic particles on a micrometer-thick conductive support is a formidable challenge for achieving high reflection loss and impedance matching between the absorber and free space. Herein, a novel and simple approach for the processing of a CNT film-Fe3O4-large scale graphene composite is studied. The Fe3O4 particles with size in the range of 20–200 nm are uniformly aligned along the axial direction of the CNTs. The composite exhibits exceptionally high wave absorption capacity even at a very low thickness. Minimum reflection loss of −44.7 dB and absorbing bandwidth of 4.7 GHz at −10 dB are achieved in composites with one-layer graphene in six-layer CNT film-Fe3O4 prepared from 0.04 M FeCl3. Microstructural and theoretical studies of the wave-absorbing mechanism reveal a unique Debye dipolar relaxation with an Eddy current effect in the absorbing bandwidth.

Soft magnetic composites are fabricated by electrodepositing FeNi and FeCo onto W fibers with a diameter of 20 and 100 (mu)m. Magnetic measurements show that as-deposited fibers are not magnetically soft, after proper thermal annealing, the samples exhibit excellent soft magnetic properties.

Memory effect is observed in both standard top and bottom spin valves. The change of the magnetization state in the pinned FM layer, below the blocking temperature, reverses the direction of the exchange bias and destroys the magnetoresistance properties.

The detailed studies on ac susceptibility, electrical properties, and magnetotransport properties of the as-prepared [Mn.sub.x][Cu.sub.1-x]O thin films (where x=7%-29%) in the temperature range of 2-300 K is reported. The results provide insight into the metal-insulator ferromagnetic transition which is a characteristic feature of magnetic ordering in Mn-doped CuO thin films.

The preparation and properties of highly oriented Mn-doped Cu2O thin films that are deposited on thermally oxidized silicon substrates by radio-frequency magnetron sputtering is reported. The details of chemical valence of ion and magnetic properties of Mn-doped Cu2O thin films are examined.

Single phase MnB alloy is fabricated using the arc-melting method and verified using x-ray diffraction. A rather strong magnetic material, which is likely to have potential applications in soft magnet, magnetic recording, and spintronics is revealed.

A novel and facile low-temperature (150 degreeC) synthesis of hexagonal ZnS nanocrystals are described. The surprising ability of achieving a high-temperature stable phase at very low temperatures not only provides economically viable route for applications but also opens a new avenue to study structural kinetics and chemistry of semiconductor nanocrystals.

We report the spin valve effect in yttrium iron garnet/platinum (YIG/Pt) bilayers. The spin Hall effect (SHE) generates spin accumulation at the YIG/Pt interface and can be opened/closed by magnetization switching in the electrical insulator YIG. The interfacial spin accumulation was measured in both YIG/Pt and YIG/Cu/Pt structures using a planar Hall configuration. The spin valve effect remained, even after a 2 nm thick Cu layer was inserted between the YIG and Pt layers, which aimed to exclude the induced magnetization at the YIG/Pt interface. The transverse Hall voltage and switching field were dependent on the applied charge current density. The origin of this behavior can be explained by the SHE induced torque exerted on the domain wall, caused by the transfer of the spin angular momentum from the spin-polarized current to the YIG magnetic moment. [ABSTRACT FROM AUTHOR]

The pure single phase of Zn0.95Co0.050 bulks is successfully prepared by solid-state reaction method. The effects of annealing atmosphere on room-temperature ferromagnetic behaviour for the Zn0.95Co0.05O bulks are investigated. The results show that the air-annealed samples has similar weak ferromagnetic behaviour with the as-sintered samples, but the obvious ferromagnetic behaviour is observed for the samples annealed in vacuum or Ar/H2 gas, indicating that the strong ferromagnetism is associated with high oxygen vacancies density. High saturation magnetization Ms = 0.73 mB/Co and coercivity Hc = 233.8 Oe are obtained for the Ar/H2 annealed samples with pure single phase structure. The enhanced room-temperature ferromagnetic behaviour is also found in the samples with high carrier concentration controlled by doping interstitials Zn (Zni). [ABSTRACT FROM AUTHOR]

Y3+ doping effect on magnetic properties of Ce0.97Co0.03 O2-d are examined. Vibrating sample magnetometer (VSM) measurements indicate that Ce0.97Co0.03 O2-d is ferromagnetic at room temperature. The saturated magnetization MS is altered by additional Y3+ doping, i.e., with the increase of the amount of Y3+ doping concentration in Ce0.97-yYyCo0.03 O2-d (y = 0.01, 0.05 and 0. 10), MS increases persistently. Raman spectra measurements indicate that additional oxygen vacancies are introduced with the amount of Y3+ doping content. The results can be well elucidated by the F-centre exchange coupling (FCE) mechanism proposed recently, thus they are important for understanding the ferromagnetism origination in transitional metal-doped insulating oxides. [ABSTRACT FROM AUTHOR]

We prepare pure single-phase Co:ZnO powders introducing controllable interstitial Zni by Zn vapour annealing. The as-ground powder shows that no room-temperature ferromagnetism (RT-FM) exists, while the Zn vapour treated samples exhibit unambiguous RT-FM with a maximum magnetic moment of 0.2 mB/Co. The FM of Co:ZnO strongly depends on the Zn diffusion process, suggesting that not only carriers but also Zni defects play an important role in mediating FM in diluted magnetic semiconductors. A new core-shell model is proposed to interpret the mixture behaviour of FM and paramagnetism observed in the Zn vapour annealed Co:ZnO powders. [ABSTRACT FROM AUTHOR]

Using Co2O3as the Co source, doped cerium oxide thin films with the composition of Ce0.97Co0.03O2??(CCO) are deposited on Si(111) and glass substrates by pulse laser deposition technique. X-ray diffraction reveals that CCO films with (111) preferential orientation are grown on Si, while the film on glass is polycrystalline with nanocrystal. X-ray photoelectron spectroscopy shows that the Co displaces the Ce atom and exists in high spin state rather than low spin state, which contributes to the room-temperature ferromagnetism confirmed by vibration sample magnetometer. Films on Si and glass are different in ferromagnetism, which is believed to be induced by different film microstructures. Based on these results, the possible ferromagnetism in this insulating film is discussed. Anyway, successful fabrication of CCO films with room-temperature ferromagnetism on Si substrates is of great importance in both technological and theoretical aspects. [ABSTRACT FROM AUTHOR]

The complex permittivity and permeability of composites consisting of metallic magnetic particles (carbonyl-iron-particles (CIPs)) embedded in a dielectric matrix (epoxy resin) have been studied at microwave frequencies. Composites with different volume fraction (5–60%) of magnetic particles have been fabricated and their complex permittivity and permeability have been measured. The concentration dependence of permittivity and permeability has been analysed using various effective medium theories. We have found that only the general Bruggeman formula describes composites very well over a wide range of concentrations used in this study. The extracted permittivity and permeability of CIPs are consistent with those reported. [ABSTRACT FROM AUTHOR]

We have developed an experimental technique to electrically characterize ferromagnetic resonance (FMR) with a large precession cone angle by using magnetic tunnel junctions on a coplanar waveguide. We observed FMR of a Ni[sub80] Fe[sub20] layer as the tunneling resistance change capturing the angle between the Ni[sub80] Fe[sub20] precession magnetization and a fixed magnetization in a reference electrode. The resonant frequency shifts with increasing microwave power as a result of the large precession cone angle that reduces the effective anisotropy field. We confirmed the validity of our results by the numerical simulations based on the Landau-Lifshitz-Gilbert equation. [ABSTRACT FROM AUTHOR]

Various surface treatment methods have been previously applied on the GaN high electron mobility transistor (HEMT). In this study, the effects of N2O surface treatment on the electrical properties of InAlN/GaN HEMT were studied. With this surface treatment, the ideality factor of the gate Schottky barrier diode decreases from 7.70 to 1.30, and the barrier height of SBD increases from 0.508 eV to 1.053 eV (~two folds), an indication of the improved Schottky contact characteristic. Negative-shifted threshold voltage, decreased gate capacitance and two-dimensional electron gas (2DEG) electron density were observed. Both the intrinsic transconductance and 2DEG electron mobility are improved. The 2DEG electron mobilities limited by various scattering mechanisms are extracted using two-dimensional (2D) scattering theory. It is found that N2O surface treatment results in the increase of the 2DEG electron mobility due to the weakened polar optical phonon, interface roughness, and polarization Coulomb field scatterings. This study offers a feasible way to further enhance InAlN/GaN HEMT performances by using N2O surface treatment. [ABSTRACT FROM AUTHOR]

We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state. [ABSTRACT FROM AUTHOR]