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Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 lm and exhibit a threshold current of 65mA for a 600 lm long cavity, and a room temperature continuous wave output power per facet >5mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 lm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of j~40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers. [ABSTRACT FROM AUTHOR]

We experimentally investigate the optical properties of a novel hybrid material/structure consisting of a GaInNAs quantum well and stacked InAs/InGaAs quantum dot layers on GaAs substrate. We demonstrate that the strong quantum confined Stark effect within the quantum well can effectively control well-dot detuning when reverse bias voltage is applied. With a combination of low- and room-temperature time resolved luminescence spectra we infer device absorption recovery time under 30 ps. These properties could be utilized in high-speed optoelectronics devices, in particular electro-absorption modulated lasers and reconfigurable multisection devices, where the hybrid quantum dots - quantum well material system could offer easily and rapidly interchangeable function, i.e., emission gain or variable attenuation, of each section depending on the external bias. [ABSTRACT FROM AUTHOR]

The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 µm is experimentally investigated. An analysis of the timescales related to carrier relaxation and escape processes as well as the "dynamical" linewidth enhancement factor is presented and compared with results obtained from similar un-doped materials. Intentional p-doping of the active region results in an enhancement of the intermediate timescale of the gain dynamics associated with phonon-assisted electron capture and a reduction of the α-factor due to increased differential gain. [ABSTRACT FROM AUTHOR]

Optical properties of GaAs/InGaAs/GaAs nanopillars (NPs) grown on GaAs(111)B were investigated. Employment of a mask-etching technique allowed for an accurate control over the geometry of NP arrays in terms of both their diameter and separation. This work describes both the steady-state and time-resolved photoluminescence of these structures as a function of the ensemble geometry, composition of the insert, and various shell compounds. The effects of the NP geometry on a parasitic radiative recombination channel, originating from an overgrown lateral sidewall layer, are discussed. Optical characterization reveals a profound influence of the core-shell lattice mismatch on the carrier lifetime and emission quenching at room temperature. When the latticematching conditions are satisfied, an efficient emission from the NP arrays at room temperature and below the band-gap of silicon is observed, clearly highlighting their potential application as emitters in optical interconnects integrated with silicon platforms. [ABSTRACT FROM AUTHOR]

We introduce a novel scheme for the simultaneous reduction of time-bandwidth product (TBP) and RF linewidth of quantum-dash two-section mode-locked lasers using optical injection-locking and filtered optical feedback. The optical injection-locked laser, double-locked with optical feedback showed 2\!\!\times TBP reduction and RF linewidth reduction by two orders of magnitude. This stabilization technique is implemented in an all-optical arrangement without optical/electrical conversion which is ideal for high-repetition-rate devices and photonic integration. [ABSTRACT FROM PUBLISHER]

Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 °C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion. [ABSTRACT FROM AUTHOR]

We characterize the electro-optical and lasing properties of a hybrid material consisting of multiple InAs quantum dot (QD) layers together with an InGaAs quantum well (QW) grown on a GaAs substrate. Over 40 nm Stark shift of the InGaAs QW leading to 9 dB extinction ratio was demonstrated. Lasing operation at the QD first excited state transition of 1070 nm was achieved and together with < 10 ps absorption recovery the system shows promise for high-speed mode-locked lasers and electro-modulated lasers. [ABSTRACT FROM AUTHOR]

The nonlinear two stage recovery of quantum dot based reverse-biased waveguide absorbers is investigated experimentally and analytically as a function of the initial ground state occupation probability of the dot. The latter is controlled experimentally by the pump pulse power. The slow stage of the recovery is exponential and its basic timescale is independent of pump power. The fast stage of the recovery is a logistic function which we analyze in detail. The relative strength of slow to fast components is highlighted and the importance of higher order absorption processes at the highest pump level is demonstrated. [ABSTRACT FROM AUTHOR]

We present the dynamics of quantum-dot passively mode-locked semiconductor lasers under optical injection. We discuss the benefits of various configurations of the master source including single, dual, and multiple coherent frequency sources. In particular, we demonstrate that optical injection can improve the properties of the slave laser in terms of time-bandwidth product, optical linewidth, and timing jitter. [ABSTRACT FROM PUBLISHER]

The ultrafast gain and refractive index dynamics in AlInAs/AlGaAs quantum dot (QD) based semiconductor optical amplifiers is reported. Measurements in the forward bias regime indicate a complete gain recovery timescale of \sim5~ps, while the phase dynamics occur over a much longer timescale. At increased pump powers, the impact of nonresonant carriers created by two-photon absorption is visible as an increased injection in both gain and phase dynamics. Reverse-biased measurements reveal a similar behavior to previous measurements on InAs QD devices. [ABSTRACT FROM PUBLISHER]

Injection profiled broad-area edge-emitting semiconductor lasers demonstrate single transverse mode operation and near-diffraction-limited beam output when driven by pulsed pump current. Thermal effects arising from CW operation induce filamentary dynamics, thus degrading the beam. Transition from the stable nonthermal to the unstable CW regime is analyzed experimentally and numerically, and techniques to improve beam quality in the thermal regime, based on feedback or thermal profiling, are proposed. [ABSTRACT FROM AUTHOR]

We propose an experiment to demonstrate the intrinsic difference between quantum and classical information by applying Hardy's theorem to two ions trapped in a Paul trap. [ABSTRACT FROM AUTHOR]

We report optical injection-locking in 21-GHz single-section and two-section InAs/InP 1.5-\mu\m quantum-dash mode-locked lasers. Two distinct mode-locked regimes were observed and successfully locked to the optically injected light. The single-section laser only operates as a self-mode-locked laser while the two-section laser could operate as both a self-mode-locked laser and saturable-absorber dominated mode-locked laser. The continuous-wave (CW) injection-locked self-mode-locked laser shows wide tuning of the mode-locked frequency (\approx270 MHz) within the locking range. The CW injection-locked saturable-absorber dominated mode-locked laser demonstrates wide optical spectrum, and 5.5 \times reduction in the time-bandwidth product of the pulses. Using dual-mode injection, strong reduction of timing jitter (\approx235 fs) is possible leading to the generation of a wide coherent frequency comb. Coherence between all the modes and the master laser is confirmed by measuring the RF beat note of each mode with a narrow linewidth laser. [ABSTRACT FROM PUBLISHER]

We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. [ABSTRACT FROM AUTHOR]

We investigate the emission dynamics of InAs/GaAs quantum dots (QDs) coupled to an InGaAs quantum well in a tunnel injection scheme by means of time-resolved photoluminescence. Under high-power excitation we observe a redshift in the QD emission of the order of 20 meV. The optical transition intensity shows a complex evolution, where an initial plateau phase is followed by an increase in intensity before a single-exponential decay. We attribute this behavior to the Coulomb interactions between the carriers in a charged QD and corroborate the experimental results with both a rate equation model and self-consistent eight-band k·p calculations. [ABSTRACT FROM AUTHOR]

The refractive index dynamics of InAs/GaAs quantum dot based waveguide absorbers is studied using heterodyne pump-probe measurements. Absorption reduction due to the pump can be accompanied by either positive or negative refractive index changes depending on the wavelength used. This change in sign of the phase amplitude coupling can be understood by considering the atomlike nature of the quantum dot transitions involved. [ABSTRACT FROM AUTHOR]

Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies. [ABSTRACT FROM AUTHOR]

The nonlinear recovery of quantum dot based reverse-biased waveguide absorbers is investigated both experimentally and analytically. We show that the recovery dynamics consists of a fast initial layer followed by a relatively slow decay. The fast recovery stage is completely determined by the intradot properties, while the slow stage depends on the escape from the dot to the wetting layer. [ABSTRACT FROM AUTHOR]

The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots’ ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively. [ABSTRACT FROM AUTHOR]

We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into account carrier capture, escape, and Pauli blocking processes. We evaluate possible differences between phonon-assisted or Auger processes being dominant for recovery. An analytical solution which corresponds to phonon-assisted interaction is then used to accurately fit experimental recovery curves and allows an estimation of both the carrier capture and escape rates. [ABSTRACT FROM AUTHOR]

We study the decrease of the ground-state output with increasing current in two-state quantum dot lasing. We show that the asymmetry in the thermal population redistribution breaks the symmetric dynamical evolution of the electron-hole pairs. This fully explains the transition from two-state to single-state lasing observed experimentally. The model also reproduces the temperature dependence of the two-state lasing. [ABSTRACT FROM AUTHOR]

The electro-optic properties of strained GaInAsSb/GaAs quantum wells (QWs) are investigated. A single QW p-i-n sample was grown by molecular beam epitaxy with antimony (Sb) pre-deposition technique. We numerically predict and experimentally verify a strong quantum confined Stark shift of 40 nm. We also predict a fast absorption recovery times crucial of high-speed optoelectronic devices mainly due to strong electron tunneling and thermionic emission. Predicted recovery times are corroborated by bias and temperature dependent time-resolved photoluminescence measurements indicating (≤30 ps) recovery times. This makes GaInAsSb QW an attractive material particularly for electroabsorption modulators and saturable absorbers. [ABSTRACT FROM AUTHOR]

We investigate the transition from unidirectional to delayed bidirectional coupling of semiconductor lasers. By tuning the coupling strength in one direction we show how the locking region evolves as a function of the detuning and coupling strength. We consider two representative values of the relaxation oscillation damping: one where the relaxation oscillations are very underdamped and one where they are very overdamped. Qualitatively different dynamical scenarios are shown to emerge for each case. Several features of the delayed bidirectional system can be seen as remaining from the unidirectional system while others clearly arise due to the delayed coupling and are similar to effects seen in delayed feedback configurations. [ABSTRACT FROM AUTHOR]

We present a theoretical approach to investigate the effect of dispersion in dynamical systems commonly described by time-delay models. The introduction of a polarization equation provides a means to introduce dispersion as a distributed delay term. The expansion of this term in power series, as usually performed to study the propagation of waves in spatially extended systems, can lead to the appearance of spurious instabilities. This approach is illustrated using a long cavity laser, where in the normal dispersion regime both the experiment and theory show a stable operation, while a modulation instability, commonly referred as the Benjamin-Feir instability, is observed in the anomalous dispersion regime. [ABSTRACT FROM AUTHOR]

We demonstrate a coexistence of coherent and incoherent modes in the optical comb generated by a passively mode-locked quantum dot laser. This is experimentally achieved by means of optical linewidth, radio frequency spectrum, and optical spectrum measurements and confirmed numerically by a delay-differential equation model showing excellent agreement with the experiment. We interpret the state as a chimera state. [ABSTRACT FROM AUTHOR]

We investigate the turn-on process in a laser cavity where the round-trip time is several orders of magnitude greater than the active medium timescales. In this long delay limit, we show that the universal evolution of the photon statistics from thermal to Poissonian distribution involves the emergence of power dropouts. While the largest number of these dropouts vanish after a few round-trips, some of them persist and seed coherent structures similar to dark solitons or Nozaki-Bekki holes described by the complex Ginzburg-Landau equation. These coherent structures connect stationary laser emission domains having different optical frequencies. Moreover, they emit intensity bursts which travel at a different speed, and, depending on the cavity dispersion sign, they may collide with other coherent structures, thus leading to an overall turbulent dynamics. The dynamics is well-modeled by delay differential equations from which we compute the laser coherence time evolution at each round-trip and quantify the decoherence induced by the collisions between coherent structures.

This publisher's note contains corrections to Opt. Lett.45, 4903 (2020)OPLEDP0146-959210.1364/OL.397840.

We show, both experimentally and theoretically, that the loss of coherence of a long cavity optical coherence tomography (OCT) laser can be described as a transition from laminar to turbulent flows. We demonstrate that in this strongly dissipative system, the transition happens either via an absolute or a convective instability depending on the laser parameters. In the latter case, the transition occurs via formation of localised structures in the laminar regime, which trigger the formation of growing and drifting puffs of turbulence. Experimentally, we demonstrate that these turbulent bursts are seeded by appearance of Nozaki-Bekki holes, characterised by the zero field amplitude and π phase jumps. Our experimental results are supported with numerical simulations based on the delay differential equations model.

We present a new material pairing that can be used to realize high-contrast gratings at wavelengths of 10 μm and greater. Using only optical lithography, the material pair solves the absorption issue limiting the popular Si/SiO 2 pairing from operation above 6 μm. We describe the obstacles that exist with the currently used grating materials for this wavelength range and outline why our chosen materials overcome this obstacle. We numerically demonstrate that gratings utilizing these materials are capable of wideband high reflectivity. We experimentally show that the spectral response of gratings that are fabricated using such a process show good agreement with theoretically predicted performance.

We demonstrate high aperture (up to NA~0.64) three-dimensional focusing in free space based on wavefront-engineered diffraction gratings. The grating lens' optical response is tailored by spatially varying the grating ridge and groove width in two dimensions to achieve focal lengths of order 100 μm that are crucial for micro-optical applications. The phase profile of the lens includes multiple 2π phase jumps and was obtained by applying an algorithm for finding the optimal path for both phase and amplitude. Experimental measurements reveal a lateral spot size of 5 μm that is close to the size of a corresponding Airy disk.

We study experimentally the dynamics of quantum-dot (QD) passively mode-locked semiconductor lasers under external optical injection. The lasers demonstrated multiple dynamical states, with bifurcation boundaries that depended upon the sign of detuning variation. The area of the hysteresis loops grew monotonically at small powers of optical injection and saturated at moderate powers. At high injection levels the hysteresis decreased and eventually disappeared.

Quantum dots (QDs) are semiconductor nanocrystals with peculiar optoelectronic properties. Their wide application in light-emitting diodes, solar cells, and the medical and defense fields makes them a potential candidate in the area of photonics and biophotonics. In this feature issue of Optical Materials Express, together with Optics Express we focus on different aspects of semiconducting nanocrystals research, especially on the advances in the synthesis, physical properties, and application of QDs.

We demonstrate the formation of GaSb quantum dots (QDs) on a GaAs(001) substrate by droplet epitaxy using molecular beam epitaxy. The high crystal quality and bimodal size distribution of the QDs are confirmed using atomic force and transmission electron microscope images. A staggered type-II QD band structure is suggested by a photoluminescence peak that is blue shifted with increasing excitation intensity, a large emission polarization of 60%, and a long carrier decay time of 11.5 ns. Our research provides a different approach to fabricating high quality GaSb type-II QDs.

We report experimental investigations on a two-section 16-GHz repetition rate InAs/GaAs quantum dot passively mode-locked laser. Near the threshold current, pseudo-periodic Q-switching with complex dynamics is exhibited. Mode-locking operation regimes characterized by different repetition rates and timing jitter levels are encountered up to twice the threshold current. Evolution of the RF spectrum and optical spectrum with current is compared. The different mode-locked regimes are shown to be associated with different spectral and temporal shapes, ranging from 1.3 to 6 ps. This point is discussed by introducing the existence of two different supermodes. Repetition rate evolution and timing jitter increase is attributed to the coupling between the dominant and the secondary supermodes.

Fabry-Perot InAs quantum-dot lasers grown on GaAs substrates are mutually coupled with a delay of several nanoseconds. Stable phase-locked output with narrow linewidth is obtained when the frequency detuning between the two lasers is less than 4 GHz. This simple locking scheme could find application in a variety of photonics applications.

We have analyzed pulse width and timing jitter in passively mode-locked two-section InAs quantum-dot lasers emitting at 1310 nm and have identified two distinct, extensive mode-locked regions with robust short pulses and low timing jitter. A record combination of 2 ps pulses and 25 fs/cycle timing jitter (500 fs, 1-100 MHz), with 1 mW average output power per facet, is demonstrated.

We analyse the properties of GaAs based quantum dot semiconductor lasers emitting near 1310 nm. The line-width enhancement factor is shown to depend strongly on device temperature, ranging from 1.5 at 20 degrees C to 5 at 50 degrees C. With optical feedback from a distant reflector, devices remained stable at 20 degrees C but displayed a range of instabilities at 50 degrees C, including irregular power drop--outs and periodic pulsations, before entering a chaotic regime. Such dynamical features are unique to quantum dot lasers -- quantum well lasers are significantly more unstable under optical feedback making such a clear route to chaos difficult to observe.

We show that the various techniques commonly used to measure the linewidth enhancement factor can lead to different values when applied to quantum dot semiconductor lasers. Such behaviour is a direct consequence of the intrinsic capture/escape dynamics of quantum dot materials and of the free carrier plasma effects. This provides an explanation for the wide range of values experimentally measured and the linewidth re-broadening recently measured.