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632 results on '"Humphreys, C."'

7. Optical and structural properties of dislocations in InGaN.

Author

Massabuau, F. C.-P., Horton, M. K., Pearce, E., Hammersley, S., Chen, P., Zielinski, M. S., Weatherley, T. F. K., Divitini, G., Edwards, P. R., Kappers, M. J., McAleese, C., Moram, M. A., Humphreys, C. J., Dawson, P., and Oliver, R. A.

Subjects
GALLIUM nitride, OPTICAL properties, CATHODOLUMINESCENCE, MOLECULAR dynamics, INDIUM
Abstract

Threading dislocations in thick layers of InxGa1−xN (5% < x < 15%) have been investigated by means of cathodoluminescence, time-resolved cathodoluminescence, and molecular dynamics. We show that indium atoms segregate near dislocations in all the samples. This promotes the formation of In-N-In chains and atomic condensates, which localize carriers and hinder nonradiative recombination at dislocations. We note, however, that the dark halo surrounding the dislocations in the cathodoluminescence image becomes increasingly pronounced as the indium fraction of the sample increases. Using transmission electron microscopy, we attribute the dark halo to a region of lower indium content formed below the facet of the V-shaped pit that terminates the dislocation in low composition samples (x < 12%). For x > 12%, the facets of the V-defect featured dislocation bundles instead of the low indium fraction region. In this sample, the origin of the dark halo may relate to a compound effect of the dislocation bundles, of a variation of surface potential, and perhaps, of an increase in carrier diffusion length. [ABSTRACT FROM AUTHOR]

Published
2019
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9. What is red? On the chromaticity of orange-red InGaN/GaN based LEDs.

Author

Robin, Y., Pristovsek, M., Amano, H., Oehler, F., Oliver, R. A., and Humphreys, C. J.

Subjects
LUMINESCENCE, QUANTUM wells, CHROMATICITY, LIGHT emitting diodes, NEAR infrared radiation
Abstract

The full width at half maximum (FWHM) of the luminescence of visible InGaN quantum well (QW) based emitters increases with wavelength. This broadening of the luminescence decreases the color saturation from 100% to about 70% up a wavelength shorter than 515 nm. For emission wavelengths longer than 515 nm, the saturation surprisingly increases again and reaches 95% beyond 560 nm. More important, in the yellow-red range, the perceived hue is strongly blue-shifted by a broad emission. This phenomenon is known as Abney effect, and it originates from the spectral sensitivities of the cone cells of the human eyes. As a consequence, for red InGaN QW based LEDs, the peak wavelength must be even further in the red. Based on a large set of QWs grown on different crystal orientations, we correlated the wavelength and the luminescence FWHM of InGaN/GaN QWs to build a model which predicts the perceived chromaticity, i.e., the apparent hue and saturation of yellow-red nitride LEDs. We also applied this model to (11-22), a-plane, and m-plane QWs and compared our data to the state-of-the-art of the literature. We concluded that the FWHM of the luminescence is a critical parameter to design and a further challenge for red InGaN-based light-emitting diodes. [ABSTRACT FROM AUTHOR]

Published
2018
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10. Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers.

Author

Choi, F. S., Griffiths, J. T., Ren, Chris, Guiney, I., Humphreys, C. J., Oliver, R. A., Wallis, D. J., Lee, K. B., Zaidi, Z. H., and Houston, P. A.

Subjects
GALLIUM nitride, SCANNING capacitance microscopy, MODULATION-doped field-effect transistors, STRAY currents, STRAINS & stresses (Mechanics)
Abstract

Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic chemical vapour deposition growth of the graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage. Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission electron microscopy, we investigate the origins of leakage paths and show that they result from the preferential incorporation of oxygen impurities on the side wall facets of the inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant increase in the breakdown voltage can be achieved even in much thinner buffer layer structures. These results demonstrate the importance of controlling the morphology of the high electron mobility transistor buffer layer as even at a very low density the leakage paths identified would provide leakage paths in large area devices. [ABSTRACT FROM AUTHOR]

Published
2018
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11. Effect of stacking faults on the photoluminescence spectrum of zincblende GaN.

Author

Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Lee, L. Y., Massabuau, F., Sahonta, S. L., Frentrup, M., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., and Dawson, P.

Subjects
GALLIUM nitride, PHOTOLUMINESCENCE, CHEMICAL vapor deposition, SILICON carbide, WAVE functions
Abstract

The photoluminescence spectra of a zincblende GaN epilayer grown via metal-organic chemical vapour deposition upon 3C-SiC/Si (001) substrates were investigated. Of particular interest was a broad emission band centered at 3.4 eV, with a FWHM of 200 meV, which extends above the bandgap of both zincblende and wurtzite GaN. Photoluminescence excitation measurements show that this band is associated with an absorption edge centered at 3.6 eV. Photoluminescence time decays for the band are monoexponential, with lifetimes that reduce from 0.67 ns to 0.15 ns as the recombination energy increases. TEM measurements show no evidence of wurtzite GaN inclusions which are typically used to explain emission in this energy range. However, dense stacking fault bunches are present in the epilayers. A model for the band alignment at the stacking faults was developed to explain this emission band, showing how both electrons and holes can be confined adjacent to stacking faults. Different stacking fault separations can change the carrier confinement energies sufficiently to explain the width of the emission band, and change the carrier wavefunction overlap to account for the variation in decay time. [ABSTRACT FROM AUTHOR]

Published
2018
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12. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs.

Author

Zaidi, Z. H., Lee, K. B., Roberts, J. W., Guiney, I., Qian, H., Jiang, S., Cheong, J. S., Li, P., Wallis, D. J., Humphreys, C. J., Chalker, P. R., and Houston, P. A.

Subjects
METAL insulator semiconductors, MODULATION-doped field-effect transistors, HETEROSTRUCTURES, INDIUM gallium nitride, SURFACE preparation
Abstract

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations. [ABSTRACT FROM AUTHOR]

Published
2018
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17. The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes.

Author

Hopkins, M. A., Allsopp, D. W. E., Kappers, M. J., Oliver, R. A., and Humphreys, C. J.

Subjects
CARRIER transmission on electric lines, DIODES, QUANTUM wells, ELECTRONS, THIN films
Abstract

The efficiency of light emitting diodes (LEDs) remains a topic of great contemporary interest due to their potential to reduce the amount of energy consumed in lighting. The current consensus is that electrons and holes distribute themselves through the emissive region by a drift-diffusion process which results in a highly non-uniform distribution of the light emission and can reduce efficiency. In this paper, the measured variations in the external quantum efficiency of a range of InGaN/GaN LEDs with different numbers of quantum wells (QWs) are shown to compare closely with the predictions of a revised ABC model, in which it is assumed that the electrically injected electrons and holes are uniformly distributed through the multi-quantum well (MQW) region, or nearly so, and hence carrier recombination occurs equally in all the quantum wells. The implications of the reported results are that drift-diffusion plays a far lesser role in cross-well carrier transport than previously thought; that the dominant cause of efficiency droop is intrinsic to the quantum wells and that reductions in the density of non-radiative recombination centers in the MQW would enable the use of more QWs and thereby reduce Auger losses by spreading carriers more evenly across a wider emissive region. [ABSTRACT FROM AUTHOR]

Published
2017
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24. Effects of electron-beam exposure on a ruthenium nanocluster polymer

Author

Thomas, M.D.R., Ahmed, H., Sanderson, K.M., Shephard, D.S., Johnson, B.F.G., Ozkaya, D., Sharma, N., and Humphreys, C.

Subjects
Electron beams -- Usage, Polymers -- Research, Ruthenium -- Research, Physics
Abstract

Ruthenium nanocluster polymers were investigated to determine the influences of electron beam exposure.

Published
2001

29. Carrier localization in the vicinity of dislocations in InGaN.

Author

Massabuau, F. C. P., Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., Kovács, A., Kappers, M. J., Humphreys, C. J., Dunin-Borkowski, R. E., and Oliver, R. A.

Subjects
INDIUM gallium nitride, ATOMIC force microscopy, LIGHT emitting diodes, METAL organic chemical vapor deposition, NITROGEN analysis
Abstract

We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological optical and structural properties directly correlated. We achieved this across an ensemble of defects large enough to be statistically significant. Our results provide evidence that carrier localization occurs in the direct vicinity of the dislocation through the enhanced formation of In-N chains and atomic condensates, thus limiting non-radiative recombination of carriers at the dislocation core. We highlight that the localization properties in the vicinity of threading dislocations arise as a consequence of the strain field of the individual dislocation and the additional strain field building between interacting neighboring dislocations. Our study therefore suggests that careful strain and dislocation distribution engineering may further improve the resilience of InGaNbased devices to threading dislocations. Besides providing a new understanding of dislocations in InGaN, this paper presents a proof-of-concept for a methodology which is relevant to many problems in materials science. [ABSTRACT FROM AUTHOR]

Published
2017
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31. The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells.

Author

Dawson, P., Schulz, S., Oliver, R. A., Kappers, M. J., and Humphreys, C. J.

Subjects
OPTICAL properties, QUANTUM well devices, ELECTRIC fields, FLUCTUATIONS (Physics), POTENTIAL energy, PHOTOLUMINESCENCE
Abstract

In this paper, we compare and contrast the experimental data and the theoretical predictions of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well structures. In both types of structure, the optical properties at low temperatures are governed by the effects of carrier localisation. In polar structures, the effect of the in-built electric field leads to electrons being mainly localised at well width fluctuations, whereas holes are localised at regions within the quantum wells, where the random In distribution leads to local minima in potential energy. This leads to a system of independently localised electrons and holes. In nonpolar quantum wells, the nature of the hole localisation is essentially the same as the polar case but the electrons are now coulombically bound to the holes forming localised excitons. These localisation mechanisms are compatible with the large photoluminescence linewidths of the polar and nonpolar quantum wells as well as the different time scales and form of the radiative recombination decay curves. [ABSTRACT FROM AUTHOR]

Published
2016
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33. Fourth meeting of the European Neurological Society 25–29 June 1994 Barcelona, Spain: Abstracts of Symposia and free communications

Author

Harms, L., Bock, A., JÄnisch, W., Valdueza, J., Weber, J., Link, I., De Keyser, J., Goossens, A., Wilczak, N., Vedeler, C., Bjorge, L., Uvestad, E., Conti, G., Williams, K., Ginsberg, L., Rafique, S., Rapoport, S. I., Gershfeld, N. L., De La Meilleure, G., Crevits, L., Faiss, J. H., Heye, N., Blanke, J., Sackmann, A., Kastrup, O., Doornbos, R., van der Worp, H. B., Kappelle, L. J., Bar, P. R., Davie, C. A., Barker, G. J., Brenton, D., Miller, D. H., Thompson, A. J., Block, F., Schwarz, M., Delodovici, L., Baruzzi, F., Bonaldi, G., Dario, A., Marra, A., Mercuri, A., Dworzak, F., Cavallari, P., Confalonieri, P., Zuffi, M., Antozzi, C., Cornelio, F., Baldissera, F., Chassande, B., Ameri, A., Eymard, B., Poisson, M., Vérier, A., Brunet, P., Congia, S., Murgia, P. L., Cannas, A., Borghero, G., Uselli, S., Mellino, G., Ferrai, R., Lampis, R., Massa, R., Muzzetto, B., Giannini, F., Rossi, S., Cioni, R., d'Aniello, C., Guarneri, A., Battistini, N., Ceriani, F., Del Santo, A., Poloni, M., Campo, J. F., Iglesias, F., Guitera, M. V., Farinas, C., Pascual, J., Leno, C., Berciano, J., Thorpe, I. W., Kendall, B. E., McDonald, W. I., Moulignier, A., Dromer, F., Baudrimont, M., Dupont, B., Gozlan, J., El Amrani, M., Petit, J. C., Roullet, E., Sterzi, R., Causaran, R., Protti, A., Riva, M., Erminio, F., Arena, O., Villa, F., Maccagnano, E., Miletta, M., Spinelli, F., Ben-Hur, T., Weidenfeldl, J., Rao, N. S., Chari, C. C., Laforet, P., Matheron, S., Adams, D., Chemouilli, Ph., Desi, M., Said, G., Davous, P., Lionnet, F., Pulik, M., Genet, P., Rozenberg, F., Cartier, L. M., Castillo, J. L., Cea, J. G., Villagra, R., de Saint Martin, L., Mahieux, F., Manifacier, M. J., Mattos, K., Queiros, C., Publio, L., Vinhas, V., PeÇanha-Martins, A. C., Melo, A., Liska, U., Zifko, U., Budka, H., Drlicek, M., Grisold, W., Kaufmann, R., Kaiser, R., Czygan, M., Gomes, I., Jones, N., Cunha, S., EmbiruÇu, E. Katiane, Vieira, V., Araujo, I., Alexandra, M., Ferreira, A., Goes, J., Chemouilli, P., Israel-Biet, Masson, H., Lacroix, C., Gasnault, J., Hildebrandt-Müller, B., Oschmann, P., Krack, P., Willems, W. R., Dorndorf, W., Freitas, V., Bittencourt, A., Fernandes, D., Nascimento, M. H., Severo, M., Moraes, D., Muller, M., Hasert, K., Merkelbach, S., Schimrigk, K., van Oosten, B. W., Lai, M., Polman, C. H., Bertelsmann, F. W., Hodgkinson, S., Cabre, P. H., Volpe, L., Smadja, D., Vernant, J. P., Villaroya, H., Violleau, K., Younes-Chennoufi, A. Ben, Baumann, N., Villanueva-Hemandez, P., Ballabriga, J., Basart, E., Arbizu, T. X., Perez-Serra, J., Vinuels, F., Giron, J. M., Castilla, J. M., Redondo, L., Izquierdo, G., Lauer, K., Henneberg, A., Bittmann, N., Link, D., Wollinsky, K. H., Mobner, R., Fassbender, K., Kuhnen, J., Schwartz, A., Hennerici, M., Miller, A., Lider, O., Abramsky, O., Weiner, H. L., Offner, H., Vanderbark, A. A., Paoino, E., Fainardi, E., Addonizio, M. C., Ruppi, P., Tola, M. R., Granieri, E., Carreras, M., Sazdovitch, V., Joutel, A., Verdier-taillefer, M. H., Heinzlef, O., Radder, C., Tournier-Lasserve, E., Brenner, R. E., Munro, P. M. G., Williams, S. C. R., Bell, J. D., Hawkins, C. P., Filippi, M., Campi, A., Dousset, V., Canal, N., Comi, G., Zhu, J., Weber, F., Retska, R., List, J., Zhang, L., Brock, M., Taphoorn, M. J. B., Heimans, J. J., van der Veen, E. A., Karim, A. B. M. F., Sarazin, M., Argentino, N., Delattre, J. Y., Derkinderen, P., Buchwald, B., Schroter, G., Serve, G., Franke, C. H., Conrad, B., Kitchen, N. D., Thomas, D. G. T., Forman, A. D., Ang, Kie- Kian, Price, R., Stephens, C., Salmaggi, A., Nermni, R., Silvani, A., Forno, M. G., Luksch, R., Boiardi, A., Grzelec, H., Fryze, C., Nowacki, P., Zdziarska, B., Sanson, M., Merel, P., Richard, S., Rouleau, G., Thomas, G., Olsen, N. K., Pfeiffer, P., Egund, N., Bentzen, S. M., Johannesen, L., Mondrup, K., Rose, C., Zyluk, B., Wondrusch, E., Berger, O., Fast, N., Jellinger, K., Lindner, K., Urman, A., Thibault, J. L., Duyckaerts, Ch., Strik, H., Muller, B., Richter, E., Krauseneck, P., Steinbrecher, A., Schabet, M., Hess, C., Bamberg, M., Dichgans, J., Counsell, C. E., McLeod, M., Grant, R., Creel, G. B., Claus, D., Sieber, E., Engelhardt, A., Rechlin, T., Thierauf, P., Neubauer, U., Peresson, M., Di Giovacchino, G., Romani, G. L., Di Silverio, F., Danek, A., Kuffner, M., Hoermann, R., Schopohl, J., Laska, M., Heye, B., Zangaladze, A. T., Valls-SoIè, J., Cammarota, A., Alvarez, R., Tolosa, E., Hallett, M., Ulbricht, D., Ganslandt, O., Kober, H., Vieth, J., Grummich, P., Pongratz, H., Brigel, C., Fahlbusch, R., Serra, F. P., Palma, V., Nolfe, G., Buscaino, G. A., Rothstein, T. L., Gibson J. M., Morrison P. M., Collins A. D., Eiselt, M., Wagnur, H., Zwiener, U., Schindler, T., Efendi, H., Ertekin, C., Erfas, M., Larsson, L. E., Sirin, H., AraÇ, N., Toygar, A., Demir, Y., Seddigh, S., Vogt, T. H., Hundemer, H., Visbeck, A., Pastena, L., Faralli, F., Mainardi, G., Gagliardi, R., Linden, D., Berlit, P., Lopez, O. L., Becker, J. T., Jungreis, C., Brenner, R., Rezek, D., Dekesky, S. T., Estol, C., Boller, F., Fernandez, J. M., Mederer, S., Batlle, J., Turon, A., Codina, A., Hitzenberger, P., Vila, N., Valls-SolÇ, J., Chamorro, A., Pouget, J., Schmied, A., Morin, D., Azulay, J. Ph., Vedel, J. P., Montalt, J., Escudero, J., Barona, R., Campos, A., Varli, K., Ertem, E., Uludag, B., Yagiz, A., Privorkin, Z., Steinvil, Y., Kott, E., Combarros, O., Sanchez-Pernaute, R., Orizaola, P., Mokrusch, Th., Kutluaye, E., Selcuki, D., Ertikin, C., Zettl, U., Gold, R., Harvey, G. K., Hartung, H. P., Toyka, K. V., Wokke, J. H. J., Oey, P. L., Ippel, P. F., Jansen, G. H., Franssen, H., Toyooka, K., Fujimura, H., Ueno, S., Yoshikawa, H., Yorifuji, S., Yanagihara, T., Talamon, C., Tzourio, C., Kiefer, R., Jung, S., Toyka, K., Ruolt, I., Tranchant, C., Mohr, M., Warter, J. M., Younger, D. S., Rosoklija, G., Hays, A. P., Kurita, R., Hasegawa, O., Matsumto, M., Komiyama, A., Nara, Y., Oueslati, S., Belal, S., Turki, I., Ben Hamida, C., Hentati, F., Ben Hamida, M., Kwiecinski, H., Krolicki, L., Domzal-Stryga, A., Dellemijn, P. L. I., van Deventer, P., van Moll, B., Drogendijk, T., Vecht, Ch. J., Nemni S., Amadio, Fazio, R., Galardin, G., Delodovici, M. L., Peghi, E., Monticelli, M. L., Sessa, A., Viguera, M. L., Palomar, M., Gamez, J., Cervera, C., Navarro, C., Serena, J., Duran, I., Fernandez, A. L., Comabella, M., Nos, C., Rio, J., Montalban, J., Navarro, X., Verdu, E., Darbra, S., Buti, M., Mrabet, A., Fredj, M., Gouider, R., Tounsi, H., Khalfallah, N., Haddad, A., Dbaiss, T., Ghnassia, R., Rouillet, E., Chedru, F., Porsche, H., Strenge, H., Li, S. W., Young, Y. P., Garcia, A. A., Baron, P., Scarpini, E., Bianchi, R., Conti, A., Livraghi, S., Rees, J. H., Gregson, N. A., Hughes, R. A. C., Sedano, M. J., Calleja, J., Canga, E., Bahou, Y., Biary, N., Al Deeb, S. M., Guern, E. L. E., Gugenheim, M., Tardieu, S., Aisonobe, T. M., Agid, Y., Bouche, P., Brice, A., Rautenstrauss, B., Nelis, E., Grehl, H., Van Broeckhoven, C., Pfeiffer, R. A., Liehr, T., Ganzmann, E., Gehring, C., Neundörfer, B., Geremia, L., Doronzo, R., Sacilotto, G., Sergi, P., Pastorino, G. C., Scarlato, G., Planté-Bordeneuve, V., Mantel, A., Baas, F., Moser, H., Antonini, A., Psylla, M., Günther, I., Vontobell, P., Beer, H. F., Leenders, K. L., Chaudhuri, K. Ray, Parker, J., Pye, I. F., Millac, P. A. H., Abbott, R. J., Sutter, M., Albani, C., de Rijk, M. C., Breteler, M. M. B., Graveland, G. A., van der Mechè, F. G. A., Hofman, A., Keipes, M., Hilger, Ch., Diederich, N., Metz, H., Hentges, F., Pollak, P., Benabid, A. L., Limousin, P., Hoffmann, D., Benazzouz, A., Perret, J., Laihinen, A., Rinne, J. O., Ruottinen, H., Nagren, K., Lehikoinen, P., Oikonen, V., Ruotsalainen, U., Rinne, U. K., Cocozza, S., Pizzuti, A., Cavalcanti, F., Monticelli, A., Pianese, L., Redolfi, E., Paiau, F., Di Donato, S., Pandolfo, M., Palau, F., Monros, E., De Michele, G., Smeyers, P., Lopez-ArLandis, J., Uilchez, J., Filla, A., Genis, D., Matilla, T., Volpini, V., Blanchs, M. I., Davalos, A., Molins, A., Rosell, J., Estivill, X., De Jonghe, P., Smeyers, G., Krols, L., Mercelis, R., Hazan, J., Weissenbach, J., Martin, J. J., Warner, T. A. T., Williams, L., Orb, A. S., Harding, A. E., Giunti, P., Sweeney, M. G., Spadaro, M., Jodice, C., Novelletto, A., Malaspina, P., Frontali, M., Salmon, E., Gregoire, Del Fiore, Comar, Franck, G., Scheltens, P. H., Siegfried, K., Dartigues, E., De Deyn, P., Horn, R., Nelson, I., Hanna, M. G., Morgan-Hughes, J. A., Collinge, J., Palmer, M. S., Campbell, T., Mahal, S., Sidle, K., Humphreys, C., Tavitian, B., Pappata, S., Jobert, A., Crouzel, A. M., DiGiamberardino, L., Steimetz, G., Barbanti, P., Fabbrini, G., Salvatore, M., Buzzi, M. G., Di Piero, V., Petraroli, R., Sbriccoli, A., Pocchiari, M., Macchi, G., Lenzi, G. L., Spiegel, R., Maguire, P., Schmid, W., Ott, A., Bots, M. L., Grobbe, D. E., Hofman, A., Howard, R. S., Russell, S., Losseff, N., Hirsch, N. P., Couderc, R., Bailleul, S., Nargeot, M. C., Touchon, J., Picot, M. C., Rizzo, M., Watson, G., McGehee, D., Dingus, T., Kappos, L., Radü, E. W., Haas, J., Hartard, C. H., Spuler, S., Yousry, T., Voltz, R., Scheller, A., Holler, E., Hohlfeld, R., Scolding, N. J., Sussman, J., Kolar, O. J., Farlow, M. R., Rice, P. H., Zipp, F., Sotgiu, S., Weiss, E. H., Wekerle, H., Chalmers, R., Robertson, N., Compston, D. A. S., Martino, G., Clementi, E., Brambilla, E., Moiola, L., Martinelli, V., Colombo, B., Poggi, A., Rovaris, M., Grimaldi, L. M. E., Roth, M. P., Descoins, P., Ballivet, S., Ruidavets, J. B., Waubant, E., Nogueira, L., Cambon-Thomsen, A., Clanet, M., Leppert, D., Hauser, S., Lugaresi, A., Tartaro, A., D'aurelio, P., Befalo, L. L. O., Thomas, A., Malatesta, G., Gambi, D., Benedikz, J. E. G., Magnusson, H., Poser, C. M., Guomundsson, G., Bates, T. E., Davies, S. E. C., Clark, J. B., Landon, D. N., ùther, J. R., Rautenberg, W., Overgaard, K., Sereghy, T., Pedersen, H., Boysen, G., Diez-Tejedor, E., Carceller, F., Gutierrez, M., Lopez-Pajares, R., Roda, J. M., Chandra, B., Ricart, W., Gonzalez-Huix, F., Molina, A., Rundek, T., Demarin, V., De Reuck, J., Boon, P., Decoq, D., Strijckmans, K., Goethals, P., Lemahieu, I., Nibbio, A., Chabriat, H., Vahedi, K., Nagy, T., Verin, M., Mas, J. L., Julien, J., Ducrocq, X., Iba-Zizen, M. T., Cabanis, E. A., Bousser, M. G., Rolland, Y., Landgraf, F., Bompais, B., Lemaitre, M. H., Edan, G., Vorstrup, S., Knudsen, L., Olsen, K. Skovgaard, Videbaek, C., Schroeder, T., van Gijn, J., Jansen, H. M. L., Pruim, J., Paans, A. M. J., Willemsen, A. T. M., Hew, J. M., vd Vliet, A. M., Haaxma, R., Vaalburg, W., Minderhoud, J. M., Korf, J., Soudain, S. E., Ho, T. W., Mishu, B., Li, C. Y., Nachainkin, I., Gao, C. Y., Cornblath, D. R., Griffin, J. W., Asbury, A. K., Blaser, M. J., McKhann, G. M., Ho, T., Macko, C., Xue, P., Stadlan, E. M., Ramos-Alvarez, M., Valenciano, L., Visser, L. H., van der Meché, F. G. A., van Darn, P. A., Meulstee, J., Schmitz, P. I. M., Jacobs, B., Oomes, P. G., Kleyweg, R. P., Jacobs, B. C., Endtz, H. P., van Doorn, P. A., van der Mech, F. G. A., Van den Berg, L. H., Mollee, I., Logtenberg, T., Thomas, P. K., Plant, G., Baxter, P. J., Luis, R. Santiago, Matsumoto, M., Notermans, N. C., Wokke, J. H. J., Lokhorst, H. M., van der Graaf, Y., Jennekens, F. G. I., Azulay, J. P., Bille-Turg, F., Valentin, P., Farnarier, G. G., Pellissier, J. F., Serratrice, G., Quasthoff, S., Schneider, U., Grafe, P., Hilkens, P. H. E., Moll, J. W. B., van der Burg, M. E. L., Planting, A. S. T., van Putten, W. L. J., van den Bent, M. J., Birklein, F., Spitzer, A., Lang, E., Neundorfer, B., Diehl, R. R., Lücke, D., Smith, G. D. P., Mathias, C. J., Serra, J., Campera, M., Ochoa, J. L., Ray Chaudhuri, K., Pavitt, D., Alam, M., Handwerker, H. O., Bleasdale-Barr, K., Smith, G., Murray, N. M. F., Hawkins, P., Pepys, M., Gellera, C., DiDonato, S., Taroni, F., Uncini, A., Di Muzio, A., Servidei, S., Silvestri, G., Lodi, R., Iotti, S., Barbiroli, B., Morrissey, S. P., Borruat, F. X., Francis, D., Mosely, I., Hansen, H. C., Helmke, K., Kunze, K., Sadzot, B., Maquet, P., Lemaire, Plenevaux, Damhaut, Sommer, C., Myers, R. R., Berta, E., Mantegazza, R., Argov, Z., Shapira, Y., Wirguin, I., Beuuer, J., Franke, C., Roberts, M., Willison, H., Vincent, A., Newsom-Davis, J., Morrison, K. E., Damels, R., Francis, M., Campbell, L., Davies, K. E., Kohler, W., Bucka, C., Hertel, G., Kanovsky, P., Auer, D., Ackermann, H., Klose, U., Naegele, Th., Bien, S., Voigt, K., Fink, G. R., Stephan, K. M., Wise, R. J. S., Mullatti, N., Hewer, L., Frackowiak, R. S. J., Weiller, C. S., Rijnites, M., Jueptner, M., Bauermann, T., Krams, M., Diener, H. C., van Walderveen, M. A. A., Barkhof, F., Hommes, O. R., Valk, J., Willmer, J. P., Guzman, D. A., Passingham, R. E., Silbersweig, D., Ceballos-Baumann, A., Frith, C. D., Frackowiak, R., Lucas, C. H., Goullard, L., Marchau, M. J., Godefroy, O., Rondepierre, P. H., Chamas, E., Mounier-Vehier, F., Leys, D., Renato, J., Verdugo, M. S. C., Campero, M., Jose, L., Ochoa, D. S. C., Vivancos, F., Tejedor, E. Diez, Martinez, N., Roda, J., Frank, A., Barreiro, P., Satoh, Y., Nagata, K., Maeda, T., Hirata, Y., YalÇinerner, B., Ozkara, C., Ozer, F., Ozer, S., Hanoglu, L., Zunker, P., Pozo, J. L., Oberwittler, C., Schick, A., Buschmann, H. -Ch., Ringelstein, E. Bernd, Lara, M., Anzola, G. P., Magoni, M., Volta, G. Dalla, Tarasov, A., Feigin, V., Beaudry, M. G., Carrier, S., Chicoutimi, Henriques, I. L., Bogoussslavsky, J., van Melle, G., Mathieu, J., Perusse, L., Allard, P., Prevost, C., Cantin, L., Bouchard, J. M., De Braekeleer, M., Agbo, C., Neau, J. P., Tantot, A. M., Dary-Auriol, M., Ingrand, P., Gil, R., Baltadjiev, D., Zekin, D., Sabey, K., Gennaula, C. P., Pope, B. A., Caparros-Lefebvre, D., Girard-Buttaz, I., Pruvo, J. P., Petit, H., Hipola, D., Martin, M., Giménez-Roldan, S., Ivanez, V., Japaridze, G., Carrasco, J. L., Picomell, I., Herranz, J. L., Macias, J. A., Nieto, M., Noya, M., Oller, L., Kiteva-Trencevska, G., Delgado, M. R., Liu, H., Luengo, A., Parra, J., Colas, J., Fernandez, M. J., Manzanares, R., Kornhuber, M. E., Malashkhia, V., Orkodashili, G., Martinez, M., Bonaventura, I., Porta, G., Martinez, I., Fernandez, A., Aguilar, M., Masnou, P., Drouet, A., Dreyfus, M., Cartron, J., Morel-Kopp, M. C., Tchernia, G., Kaplan, C., Lammers, M. W., Hekster, Y. A., Keyser, A., Meinardi, H., Renier, W. O., Boon, P. A. J. M., Have, M. D., Kint, B., Cruz, P., Cadilha, A., Almeida, R., Goncalves, M., Pimenta, M., Ramos, L. M. P., Polder, T. W., Broere, C. A., Polman, L., Rother, I., Rother, M., Schlaug, G., Arnold, S., Holthausen, H., Wunderlich, G., Ebner, A., Luders, H., Witte, O. W., Seitz, R. J., Serra, L. L., Gallicchio, B., Rotondi, F., Wieshmann, U., Meierkord, H., Sabev, K., Di Carlo, V., Gueguen, B., Derouesné, Ch., Ancri, D., Bourdel, M. C., Guillou, S., Aliaga, R., Chornet, M. A., Rodrigo, A., Pascual, A. Pascual -Leone, Catala, M. D., Pascual-Leone, A., Benbadis, S. R., Dinner, D. S., Chelune, G. J., Lüders, H. O., Piedmonte, M. R., Blanco, T., Lopez, M. P., Romero, B., Deltoro, A., Pascual, A., Pascual, Leone, Bolgert, F., Josse, M. O., Tassan, P., Touze, E., Laplane, D., Godenberg, F., Brizioli, E., Del Gobbo, M., Pelliccioni, G., Scarpino, O., Durak, H., Damlacik, G., Tunca, Z., Fidaner, H., Yurekli, Y., Yemez, B., Kaygisiz, A., Anllo, E. A., Esperet, E., Giovagnoli, A. R., Casazza, M., Spreafico, R., Avanzini, G., Mascheroni, S., Vecchio, I., Tornali, C., Antonuzzo, A., Grasso, A. A., Bella, R., Pennisi, G., Raffaele, R., Broeckx, J., Schildermans, F., Hospers, W., Deberdt, W., Carney, J. M., Aksenova, M., Chen, M. S., Juncadella, M., Busquets, N., De la Fuente, I., Rodriguez, A., Rubio, F., Soler, R., Khati, C., Pillon, B., Deweer, B., Malapani, C., Malichard, N., Dubois, B., Rancurel, G., Lopez, D. L., Jungreia, G., DeKosky, S. T., Boiler, F., Weiller, C., Rijntjes, M., Mueller, S. P., Maguire, E. A., Burke, E. T., Staunton, H., Phillips, J., Rousseaux, M., Pena, J., Bertran, I., Santacruz, P., Lopez, R., Catafau, A., Lomena, F., Blesa, R., Rampello, L., Nicoletti, A., Cabaret, M., Lesoin, F., Steinling, M., Tournev, I., Maier-Hauff, K., Schroeder, M., Wolf, A., Cochin, J. P., Noel, I., Augustin, P., Auzou, P., Hannequin, D., Maria, V., Lopez-Bresnahan, Danielle, D. M., Antin-Ozerkis B. A., Bartels, E., Rodiek, S. O., Flugel, K. A., Campos, D. M., Salas-Puig, J., Del Rio, J. Sanhez, Vidal, J. A., Lahoz, C. H., Eraksoy, M., Barlas, O., Barlas, M., Bayindir, C., Ozcan, H., Birbamer, G., Gerstenbrand, F., Felber, S., Luz, G., Aichner, F., Seidel, G., Kaps, M., Hutzelmann, A., Gerriets, T., Kruggel, F., Martin, P. J., Gaunt, M. E., Abbot, R. J., Naylor, A. R., Meary, E., Dilouya, A., Meder, J. F., De Recondo, J., Lebtahi, R., Neff, K. W., Meairs, S., Viola, S., Matta, E., Aquilone, L., Rise, I. R., Authier, F. J., Kondo, H., Ghnassia, R. T., Degos, J. D., Gherardi, R. K., Bardoni A., Ciafaloni E., Comi G. P., Bresolin N., Robotti M., Moggio M., Rigoletto C., Roses A., Scarlato G., Castelli, E., Turconi, A., Bresolin, N., Perani, D., Felisari, G., Chariot, P., de Pinieux, G., Astier, A., Jacotot, B., Gherardi, R., Fischer-Gagnepain, V., Louboutin, J. P., Crespo, F., Florea-Strat, A., Fromont, G., Sabourin, J. -C., Gonano, E. -F., Moroni, I., Prelle, A., Iannaccone, S., Quattrini, A., deRino, F., Sessa, M., Golzi, V., Smirne, S., Nemni, R., Turpin, J. C., Lucotte, G., Jacobs, S. C. J. M., Willems, P. W. A., Bootsma, A. L., Lasa, A., Calaf, M., Baiget, M., Gallano, B., Fichter-Gagnepain, V., Mazzucchelli, F., D'Angelo, M. G., Velicogna, M., Bet, L., Comi, G. P., Bordoni, A., Gonano, E. F., Bazzi, P., Rapuzzi, S., Moggio, M., Fagiolari, G., Ciscato, P., Messina, A., Battistel, A., Ryniewicz, B., Sangla, I., Desnuelle, C., Paquis, V., Cozzone, P. J., Bendahan, D., Sturenburg, H. J., Kohncke, G., Castellli, E., Linssen, W., Stegeman, D., Binkhorst, R., Notermans, S., Jaspert, A., Fahsold, R., de Munain, A. Lopez, Cobo, A., Martorell, L., Poza, J. J., Navarrete Palau, D., Emparanza, J. I., Sanchez-Roy, R., Vilchez, J. J., Hernandez, M., Tena, J. Garcia, Perla, C., Koutroumanidis, M., Papathanasopoulos, P., Papadimitriou, A., Papapetropoulos, T. H., Divari, R., Hadjigeorgiou, G. M., Anastasopoulos, I., Sansone, V., Rotondo, G., Meola, G., Rigoletto, C., Messina, S., Szwabowska-Orzeszko, E., Jozwiak, S., Michalowicz, R., Szaplyko, W., Petrella, M. A., Della Marca, G., Masullo, G., Mennuni, G. F., Kompf, D., Wascher, E., Verleger, R., Kaido, M., Soga, F., Toyooka, H., Bayon, C., Rubio, J., Carlomagno, S., Parlato, V., Santoro, A., Lavarone, A., Bonavita, V., Pentore, R., Venneri, A., Pasquier, F., Lebert, F., Grymonprez, L., Lefebvre, C., Van der Linden, M., Derouesné, C., Renault, B., Lacomblez, L., Homeyer, P., Ouss, L., Neuman, E., Malbezin, M., Barrandon, S., Guez, D., Stevens, M., van Swieten, J. C., Franke, C. L., Sanchez, A., Castellvirel, S., Mila, M., Jimenez, D., Pallesta, F., Ruiz, P. J. Garcia, Barrio, A., Barroso, T., Benitez, J., de Yebenes, J. Garcia, Manubens, J. M., Martinez-Lage, J. M., Larumbe, R., Muruzabal, J., Lacruz, F., Quesada, Pedro, Gallego, J., Ferini-Strambi, L., Marcone, A., Garancini, P., Tedesi, B., Jacob, B., Rozewicz, L., Langdon, D., Davie, C., Ron, M., Thompson, A., Koepp, M. J., Hansen, M. L., Guldin, B., Pressler, R. M., Ried, S., Scholz, C., Monaco, F., Gianelli, M., Schiavalla, M. P., Naldi, P., Cantello, R., Torta, R., Verze, L., Mutani, R., Knott, H., Ferbert, A., Schulze-Bonhage, A., Aust, W., Di Mascio, R., Marchioli, R., Vitullo, F., Di Pasquale, A., Sciulli, L., Kramer, V., Tognoni, G., Santacruz, P., Lopez, R., Marti, M. J., Charques, I., Catafau, A., Lomeila, F., Peila, J., Bertran, I., Blesa, R., Krendel, D. A., Costiga, D. A., Koeppen, S., Korn, W. M., Brugge, S., Schmitz, D., Scheulen, M. E., King, R. H. M., Robertson, A. M., Thomas, P. K., Kerkhofs, A., Vermersch, P., Dereeper, O., Daems Monpeun, C., Parent, M., Deplanque, D., Petit, H., Campero, M., Serra, J., Ochoa, J. L., Martinez-Matos, J. A., Montero, J., Olivé, M., Rene, R., Vidaller, A., Gugenheim, M., Gouider, R., Le Guern, E., Brice, A., Agid, Y., Bouche, P., Grisold, W., Ziflo, U., Drlicek, M., Budka, H., Jellinger, K., Zielinski, C. H., Ginsberg, L., King, R. H. M., Workman, J., Platts, A. D., Thomas, P. K., Gherardi, R. K., Florea-Strat, A., Poron, F., Sabourin, J. -C., Fazio, R., Nemni, R., Franceschi, M., Lorenzetti, I., Rinaldi, L., Canal, N., Weilbach, F. X., Sennlaub, A., Jung, S., Gold, R., Toyka, K. V., Hartung, H. P., Giegerich, G., Ellie, E., Vital, A., Steck, A. J., Vital, C., Julien, J., Doneda, P., Pizzul, S., Scarpini, E., Chiodi, P., Ramacci, M. T., Livraghi, S., Maimone, D., Annunziata, P., Salvadori, C., Guazzi, G. C., Arne-Bes, M. C., Delisle, M. B., Fabre, N., Hurtevent, J. F., Bes, A., Baudoin-Martin, D., Laborde, E., Viallet, F., Creisson, C., Crespi, V., Bogliun, G., Marzorati, L., Zincone, A., D'Angelo, L., Liberani, A., Merlini, M., Rivolta, R., Creange, A., Sabourin, J. -C., Theodorou, I., Gherardi, R. K., Conti, A. M., Malosio, M. L., Baron, P. L., Scarlato, G., Chorao, R., Rosas, M. J., Leite, I., Callea, L., Donati, E., Bargnani, C., Bud, M., Verdu, E., Navarro, X., Braun, S., Einius, S., Poindron, P., Warier, J. M., Bradley, J., Bekkelund, S. I., Torbergsen, T., Mellgren, S. I., Carlomagno, S., Parlato, V., Santoro, A., Lavarone, A., Boller, F., Bonavita, V., Engelhardt, A., Lörler, H., Robeck, S., Kluglein, C., Comi, G., Avoledo, V., Locatelli, T., Leocani, L., Galardi, G., Magnani, G., Medaglini, S., Chkhikvishvili, T. S., Zangaladze, A., Bratoeva, M., Kovachev, P., Chavdarov, D., Artemis, N., Karacostas, D., Milonas, I., Arpa, J., Lopez-Pajares, R., Cruz-Matinez, A., Sarria, J., Palomo, F., Alonso, M., Rodriguez-Al-barino, A., Lacasa, T., Nos, J., Barreiro, P., Martinez, A. Cruz, Villoslada, C., Alons, M., Taghavy, A., Hamer, H., Kratzer, A., Dethy, S., Pauwels, T., Monclus, M., Luxen, A., Goldman, S., Ziegler, M., Crambes, O., Ragueneau, I., Arnaud, F., Zappia, M., Montesanti, R., Colao, R., Palmieri, A., Branca, D., Nicoletti, G., Rizzo, M., Parlato, G., Quattrone, A., Vanacore, N., Zuchegna, P., Bonifati, V., Meco, G., Scholz, J., Friedrich, H. -J., Rohl, A., Ulm, G., Vieregge, P., Savettieri, G., Rocca, W. A., Meneghini, F., Grigoletto, F., Morgante, L., Reggio, A., Salemi, G., Di Pierri, R., OzckmekÇi, S., Ertan, S., Yeni, N., Apaydin, H., Erkol, G., Kiziltan, G., Denktas, F., Ranoux, D., de Recondo, J., Ostergaard, L., Werdelin, L., Odin, P., Lindvall, O., Dupont, E., Christensen, P. B., Boisen, E., Jensen, N. B., Schmiegelow, M., Ingwersen, S. H., Matias-Guiu, J., Canet, T., Falip, R., Martin, R., Galiano, L., Voloshin, M. Y., Burchinskaya, L. F., Cabrera-Valdivia, F., Jimenez-Jimenez, F. J., Molina, J. A., Fernandez-Calle, P., Vazquez, A., Canizares-Liebana, F., Larumbe-Lobalde, S., Ayuso-Peralta, L., Rabasa, M., Codoceo, R., Arrieta, F. J., Aguilar, M. V., Jorge-Santamaria, A., Martinez-Para, M. C., Alarcon, J., Mateo, D., Gimenez-Roldan, S., Gencheva, E., Tzonev, T. z., Georgiev, G., Petkova, P., Gasparini, M., Vanacore, N., Meco, N. G., de la Sierra, G., Aguado, F., Revilla, M., Varela, L., Rico, H., Feve, A., N'Guyen, J. P., Bathien, N., Fenelon, G., Veroust, J., Cesaro, P., Egersbach, G., Hattig, H., Schelosky, L., Wissel, J., Poewe, W., Durif, F., Albuisson, E., Debilly, B., Tournilhac, M., Magnani, C., Mocellini, C., Soffietti, R., Schiffer, D., Cardozo, A., Cruz-Sanchez, F. F., Falip, L., Potagas, G., Ziegler, M., Rondot, P., Bonifati, V., Fabrizio, E., Meco, G., Bostantjopoulou, S., Katsarou, Z., Kyriazis, G., Baas, H., Demisch, L., Esser, A., Zoeller, F., Burklin, F., Harder, S., Fischer, P. A., Arcusa, M. J., Hermandez, S., Claramonte, F. J., Pascual, A. Pascual- Leone, Alonso, M. D., Catata, M. D., Alessandri, A., Giustini, P., Dufour, A., Ciusani, E., Nespolo, A., Roelcke U., Radu E. W., von Ammon K., Maguire R. P., Leenders K. L., Radionova, M., Chavdarov, D., Bratoeva, M., Tzekov, Ch., Pietrangeli, A., Bove, L., Pace, A., Falqui, L., Jandolo, B., Potemkowski, A., Muller B., Reinhard I., Krone A., Warmuth M., Brocker E. M., Krauseneck P., Meyding-Lamadé, U., Krieger, D., Sartor, K., Hacke, W., Maugard-Louboutin, C., Fayet, G., Sagan, C., Martin, S., Ménégalli, D., Lajat, Y., Resche, F., Koriech, O. M., Al Moutaery, K., Yaqub, B., Jochens, R., Wolters, A., Venz, S., Cordes, M., Hecht, B. K., Chatel, M., Gaudray, P., Turc-Carel, C., Gioanni, J., Ayraud, N., Hecht, F., Rumbach, L., Racadot, E., Bataillard, M., Billot, M., Pariset, J., Wijdenes, J., Montalban, Rio J., Tintoré, M., Galan, I., Acarin, N., Rapaport, S., Huberman, M., Shechtcr, D., Karabudak, R., Kilinc, M., Boyacigil, S., Cila, A., Polo, J. M., Setien, S., Sanchez, R., Figols, J., Zubimendi, A., Nadareishvili, Z. G., Massot, R., Marés, R., Gallecho, F., Richart, C., Hernandez, M. A., Garcia, M. R., Lorenzo, J. N., Leon, C., Muros, M., Togores, J., Kutluk, K., Damlacik, G. A., Tekinsoy, B., Obuz, O., Baklan, B., Idiman, E., Genc, K., Zielasek, J., Schmidt, B., Liew, F. Y., Gulay, Z., Yulug, N., Wong, K. S., Wong, T. W., Yu, T. S., Kay, R., Poupon, R., Giral, P., Roberti, C., Zanette, E. M., Chiarotti, F., Brusa, L., Cerbo, R., Prusinski, A., Pondal, M., Canton, R., Dominigo, Erodriguez J., Pereira Monteino J. M., Pereira Monteino X., Pardo, J., Carroacedo, A., Barros, F., Lema, M., Castillo, J., Melchor, A., Montiel, I., Guiu, J. Matias, Kloss, T. M., Keidel, M., Jacob, M., Idiman, F., Idman, E., Ozturk, V., Metin, E., Yilmaz, M., Gerard, J. M., Bouton, R., Decamps, D., Herbaut, A. G., Delecluse, F., Cavenaile, M., Divano, L., Chazot, G., Boureau, F., Emile, J., Bertin, L., d'Allens, H., Ferro, J. M., Costa, I., Carletto, F., Catarci, T., Padovani, A., Iandolo, B., Bartoli, M., Bonamini, M., Pulcinelli, F., Pignatelli, P., Russo, M., Gazzaniga, P. P., Barros, J., Pinheiro, J., Correia, A. P., Monteiro, J. M. Pereira, Alvarez-Cermeno, J. C., Avello, G., Sastre, J. L., Vecino, A., Cesar, J. M., Leone, M., Stankov, B., D'Amico, D., Maltempo, C., Moschian, F., Fraschini, F., Bussone, G., Molto, J. M., Fernandez, E., Fernandez, A. Morento, Barreiro, A., Siclia, J., Castejon, P., Mihout, B., Malberin, M., Salzman, V., Bogousslavsky, J., Meneghetti, G., Baracchini, C., Bozzato, G., Marini, B., Mendel, T., Czlonkowska, A., Pasierski, T., Szwed, H., Marta-Moreno, J., Lopez-Delval, J., Mostacero, E., Morales, F., Mahagne, M. H., Rogopoulos, A., Bertrand, F., Bedoucha, P., Lanteri-Minet, M., Riva, D., Zorzi, C., Milani, N., Vajsar, J., Ronen, G., Macgregor, D., Becker, L., Susseve, J., Seidl, Z., Faber, J., Obenberger, J., Springer, R., Bax, R. T., Eckardt, T., Czettritz, G. V., Emmrich, P., Vlaski-Jekic, S., Petrova, V., Cherninkova, S., Gudeva, T., Tzekov, C., Devoti, M., Franceschetti, S., Mientus, S., Vienna, P., Vashtang, Y., Tazir, M., Assami, S., Oulbani, D., Kaci Ahmed, M. Ait, Andersen, G., Vestergaard, K., Riis, J. O., Chavdarov, D., Corbo, M., Previtali, S., Allen, R. R., McKay, W. C., Rowbotham, M. C., Castellvi-Pel, S., Banchs, I., Kruyer, H., Corral, J., Saugeir-Veber, P., Munnich, A., Bonneau, D., Rozet, J. M., Le Merrer, M., Boespflug-Tanguy, O., Gokyigit, A., Oktem, O., Demir, G., Caliskan, A., Gardiner, R. M., Shorvon, Simon, Wieser, Heinz -Gregor, Hossmann, K. A., Steinberg, A., van Crevel, H., Ducros, A., Labauge, P., Pinsard, N., Ponsot, G., Gouttiere, F., Gastaut, J. L., Delrieu, O., BesanÇon, V., Klopstock, T., May, A., Seibel, P., Papagiannuli, E., Reichmann, H., Gurses, C., Aykut, C., Aktan, S., De Vuono, G., Fiacco, F., Gazzaniga Pozzill, P. P., Assuerus, V., Jacomet, C., Picard, O., Rozenbaum, W., Nueckel, M., Osschmann, P., Horning, C. R., Caldarelli-Stefano, R., Omodeo-Zorini, E., Rivolta, G. E., Maserati, R., Cagni, A., Ferrante, P., Lamadé, W., Heb, Th., Gosztonyl, G., Daral, G., Fresquet, C., Storch-Hagenlocher, B., Wildemann, B., Jager, G., Fuhry, L., Van Paesschen, W., Grunewald, R. A., Duncan, J. S., Connelly, A., Jackson, G. D., Sisodiya, S., Raymond, A. A., Shorvon, S. D., Fish, D. R., Stevens, J. M., Savic, I., Pauli, S., Thorell, J. O., Browne, R. H., Kornhuber, J., Retz, W., Riederer, P., Boon, F., Calliauw, L., Hoksergen, I., Thiery, E., Caemert, J., Decoo, D., Desomer, A., Chevalier, Y., Grinspan, A., Hirsch, E., Moszkowski, J., Marescaux, C., Yaqub, B. A., Valdueza, J. M., Puchner, M. J. A., Dammann, O., Vortmeyer, A., Herrmann, H. -D., Peterson, W., Prevett, M. C., Cunningham, V., Brooks, D. J., Pomes, A., Sunol, C., Durwen, H. F., Confavreux, Ch., Grimaud, J., Saddier, P., Moreau, T., Cortinovis-Tourniaire, P., Aimard, G., Adeleine, P., Paty, D. W., Wiles, C. M., Midgard, R., Riise, T., Kvale, G., Nyland, H., Stodal, H., Haase, A., Lassmann, H., Deeb, S. M. Al., Bruyn, G. W., Semana, G., Teisserenc, H., Alizadeh, M., Loiseau, P., Birebent, B., Yaouanq, J., Genetet, B., Sabouraud, O., Charron, D. J., Shaw, C. E., Stelmasiak, C., Solski, J., Nowicki, J., Jakubowska, B., Ryba, M., Grieb, P., Garcia-Merino, A., Usuku, K., Yunis, E., Alper, C., Hauser, S. L., Betuel, H., Gebuhrer, L., Salier, J. P., Kellar-Wood, H., Govan, G. G., Bromberg, J. E. C., Rinkel, G. J. E., Algra, A., Moulin, T., Stojkovic, T., Chavrot, D., Klotzsch, C., Kaiser-Rub, K., Nahser, H. C., Klijn, C. J. M., Tulleken, C. A. F., Rappelle, L. J., Daffertshofer, M., Kother, J., Hornig, C. R., Rust, D. S., Busse, O., Laun, A., Corabianu, O., Berbinschi, A., Chastang, C., Cophignon, J., Haguenau, M., Ketelslegers, J. M., Jander, S., Kramer, M., Schröter, M., Witte, O. W., Stoll, G., Möbner, R., Barak, V., Sarova-Ponchas, I., Holon, Le Coz, P., Woimant, F., George, B., Merland, J. J., Chleide, E., Casademont, J., Barrientos, A., Cardellach, F., Cervantes, F., Grau, J. M., Montoya, J., Rozman, C., Urbano-Marquez, A., Nunes, V., Lane, R. J. M., Archard, L. C., Schapira, A. H. V., Cooper, J. M., Barnes, P. R. J., Kemp, G. J., Taylor, D. J., Toscano, A., Garavaglia, B., Vita, G., Rodolico, C., Aguennouz, M., Messina, C., Mariottu, C., Uziel, G., Carrara, F., Mora, M., Zeviani, M., Mahe, B., Milpied, N., Bernasconi, P., Torchiana, E., Simoncini, O., Dalakas, M. C., Goebels, N., Michaelis, D., HÄcker, G., Ptacek, L., Gonzalez, A., Sevilla, T., Diaz, C., Baggi, F., Andreetta, F., Bielicki, G., Tanguy, A., Zanca, M., Renou, J. P., De Deyn, P. P., Marescau, B., Pickut, B. A., Cobo, A. M., Emparanza, J. L., Munain, A. Lopez de, Marti-Masso J. F., Ciafalon, E., Bardoni, A., Fortunato, F., Garghentino, R., Roses, A., Metz-Lutz, M. N., Coquerel, A., Pfaff, F., Dussallant, M., Gaudriault, G., Zsurger, N., Le Cam-Duchez, V., Berod, A., Vincent, J. P., Tayot, J., Rostene, W., Giraud, G., Minault, C., Vallée, J., Cailloux, F., Law, L., Paulson, O. B., Britton, T. C., Dones, I., Servello, D., Molteni, F., Mariani, G., Broggi, G., Hassan, S. M., Jennekens, F. G. I., Wieneke, G., Veldman, H., Fritz, C., Braune, H. -J., Sullivan, E. P. O., Jenkins, I. H., Henderson, L., Kennard, C., Brunholzl, Ch., Calvet, J. Pascual, Insa, Jm. Soler, Serradell, A. Pou, Coria, F., Rubio, I., Garcia, M. A., Duarte, J., Sempere, A. P., Claveria, L. E., Blanco, I., Ferrarini, M., Testa, D., Cazzaniga, C., Farinotti, M., Filippini, G., Hawkes, C. H., Graham, A., McDonald, A., Chroni, E., Heatley, F. W., Spencer, G. T., Moulard, B., Camu, W., Dhib, M., Diaye, M. N., Malafosse, A., Meininger, V., Billiard, M., Baldy-Moulinier, M., Léger, J. M., Harpin, M. L., Willison, H. J., Veitch, J., Herron, B., AlMemar, A., Reiners, K., Michels, M., Hughes, R. A. G., Heidenreich, F., Archelos, J. J., Uchuya, M., Graus, F., Feltri, L., Scherer, S. S., Wrabetz, L., van Schaik, I. N., Vermeulen, M., Brand, A., Tekin, S., Afsar, N., Sarropoulos, A., (née Schönbeck), S. Spuler, Schönhuber, R., Espadaler, J. M., Fardeau, M., Pino, I. M., Diez Tejedor, E., Rio, F. Garcia, Prados, C., Gomez, L., Munoz, J., Bouchard, C., Barrett, M. J., Coulton, G. R., Casadevall, J., Sala, R. Alvarez, Garcia, J. M. Pino, Dupuis, M. J. M., Mezt, R., Jean, D., Maes, E., Smits, R. C. F., Emmen, H. H., Kulig, B. M., van Loenen, A. C., de Waal, R., van Diemen, H. A. M., Koetsier, J. C., Ince, D., Ferri, R., Durelli, L., Bangioanni, M. R., Ferrero, B., Riva, A., Bergaasco, B., Stenager, E., Stenager, E. N., Jensen, K., De Andres, C., Anaya, F., Dimova, V., Hansen, A. W., Norby, S., Edal, A. L., Rosenberg, T., Thorpe, J. W., Filippi, M., Horsfleld, M. A., Reganati, P., Baratti, C., Bressi, S., Ozurk, V., Yeil, S., Rodegher, M., Sirabian, G., Alberoni, M., Eoli, M., La Mantia, L., Manetti, E., Zaffaroni, M., Milanese, C., Corsini, E., de Castro, P., Carreno, M., Iriarte, J., Heide, W., Barado, J., Echaniz, P., Cuadrado, E., Baykan-Kurt, B., Oktem-Tanor, O., Bahar, S., Konyalioglu, R., Tumac, A., Gok, S., Gurvit, H., Gursoy, G., Henderson, C. E., Westarp, M. E., Perron, H., Hoff-Jörgensen, R., Rasmussen, H., Schraff, S., Kornhuber, H. H., Moseley, I. F., Colangelo, A. M., Fetoni, V., Parati, E., Austoni, L., DiGiovanni, A., Meucci, N., Nobile-Orazio, E., Scarlato, G., Goi, G., Lombardo, A., Bairati, C., Aversa, E., Caputo, D., Ferrarese, C., Canafoglia, L., Frigo, M., Pecora, N., Riva, R., Frattola, L., Carpo, M., Gamba, M., Meussi, N., Barbieri, S., Ostermeyer, B., Patten, B. M., Abeta, S., Inoue, N., Matsui, H., Yoshino, Y., Pizzi, C. Delli, Ragno, M., Losseff, N. A., Fletcher, N. A., Thorpe, J., Droogan, A. G., Harper, R., Hawkins, S. A., Patterson, V. H., Bell, P., Soeterboek, A. A. J., Koehler, P. J., Urtasun, M., Vilchez, J., Castel-lvi-Rel, S., Gine, R., Villa, M., Koehler, W., Kumar, A. J., Edwin, D., Moser, H. W., Guidetti, D., Ferlini, A., Motti, L., Bondavalli, M., Patrosso, M. C., Ghidoni, E., Alfaro, A., Giros, M. L., Barcelo, A., Piqueras, A., Martinez, V., Rango, M., Bamonti, F., Greco, F., Spagnoli, D., Tomei, G., Zetta, L., Honczarenko, K., Jezewski, T., Kojder, I., Verlooy, J., Reempts, Jos V., Deuren, B. V., Borgers, M., Gajda, J. U., Ley-Pozo, J., Louwen, P., Happe, S., Buschmann, H. C., Ringelstein, E. B., Yamawaki, T., Takao, M., Suzuki, N., WeilBenborn, K., Schellong, S., Ehrenheim, C., Wollenhaupt, J., Goetz, C., Lubach, D., Vion-Dury, J., Nicoli, F., Confort-Gouny, S. O., Dhiver, C. O., Lamoureux, S., Salvan, A. M., Gastaut, J. -A., Gastaut, J. -L., Cozzone, P., Ribalta, T., Santamaria, J., Drewes, A. M., Taagholt, S. J., van den Berg, J. S. P., Limburg, M., Valldeoriola, F., Valls-Solé, J., Marti, M. J., Trenkwalder, C., Stiasny, K., Collado-Scidel, V., Wetter, T., Kazenwadel, J., Kohnen, R., Ramm, S., Oertel, W. H., Thajeb, P., Starck, M., Albrecht, H., Pollmann, W., Konic, N., Split, W., Sulkowski, W., Kowalska, S., Sawradewicz-Rybak, M., Musior, M., Scaioli, V., Brock, S., Ciano, C., Palazzini, E., Servan, J., Aoba, S., Yamaguchi, S., Johkura, K., Rosin, L., Solimena, M., De Camilli, P., Meinck, H. -M., Roquer, J., Marti, N., Cano, A., Pou-Serradell, A., Robeck, S., Enqelhardt, A., Kalden, J. R., Dhaenens, G., Tyrdal, S., Broere, C. A. J., Polman, L. J., Gomez, R., Alberdi, M., Delgado, J. M., Kansu, E., Saribas, O., Zileli, T., Proust, F., Freger, P., Creissard, P., Proano, J., Patrignani, J., Castro, J., Ugarte, A., Giros, Ma. L., Pampols, Ta., Sabev, C., Gikova, S., Antonova, N., Georgieva, L., Stanev, V., Popova, G., Kostadinova, S., Pepeliarska, M., Pierre-Jerome, C., Bekkelund, S. I., Husby, G., Mellgren, S. I., Attaccalite, A., Guidi, M., Passero, S., Caruso, V., HÄgele, J., Lohmeyer, J., Heilmann, M., Ohly, A., Ceballos-Baumann, A. O., Joussen, K., Sonka, K., Chave, B., Confort-Gouny, S., Houallah, T., Neundoerfer, B., Tex, S., Seeber, C., Mokrusch, T., Urdiain, T. X. Arbizu, Yelamos, S. M., Villanueva, P., Serra, J. Peres, Braghi, S., Bonifacio, E., Natali-Sora, M. G., Debbink, Y. N., Marra, T. R., Mossman, S., Timmings, P., Seitz-Dertinger, S., Solbach, W., Mainz, A., Manfredini, E., Calabrese, E., Allaria, S., Mariani, C., Sinaki, M., Lynn, S., Westerlind, K., Ossege, L. M., Voss, B., Wiethege, Th., Sindern, E., Malin, J. p., Le Doze, F., Chapon, F., de la Sayette, V., Schaeffer, S., Dary, M., Lechevalier, B., Viader, F., de Pommery, J., Weill-Fulazza, J., Menetrey, M., Lazzarino, L. G., Nicolai, A., Nappo, A., Blin, J., Mazetti, P., Mazoyer, B., Ayed, S. Ben, Rivaud, S., Vidailhet, M., Pierrot-Deseilligny, C., Chase, T., Jordan, K. G., Gergaud, J. M., Breux, J. P., Roblot, P., Grollier, G., Giraudon, B. Becq, Dobato, J. L., Gilabert, Y. Perez, Blanco, J. L. Munoz, de Kruijk, J., Twijnstra, A., Wilmink, J., Leffers, P., Iniguez, C., Jimenez-Escrig, A., Nocito, M., Villar, M. L., Gonzalez-Porque, P., Gobernado, J. M., Chandler, H. C., Crockard, H. A., Henderson, F., Rossi, T., Maidani, M., Pujol, A., Rimola, A., Beltran, J., Garcia-Valdecasas, J. C., Navasa, M., Grande, L., Galofre, J., Visa, J., Rodes, J., Ruiz, M., Pampols, T., Bruce, L., Tanner, M. J. A., Lefaucheur, J. P., Verroust, J., Taghavy, A., Hamer, H., Benomar, A., Cancel, G., Stevanin, G., Durr, A., Labaune, C., Desnizza, V., Widjaja-Cramer, B., Schulze-Bonhage, A., Kott, H., Ferbert, A., Sanz-Sebastian, C., Pascual, L. F., Alegria, F. Abad, Kushnir, M., Groozman, G. B., Korczyn, A. D., Drory, Ve., Korczyn, A., Guggenheim, H., Baykouchev, St., Struppler, A., Tchalucova, N., Jotova, J., Mokri, B., Parisi, J. E., Scheithauer, B. W., Piepgras, D. G., Miller, M., Kornhuber, A. W., Köhler, A., Hülser, P. J., Kriebel, J., Alonso-Villaverde, C., Castro, A., Masana, L., Urda, A. Martin, Fernandez, J., Mares, R., Torre, L., Mayayo, E., Lossos, A., Gomori, M., Libson, E., Goldfarb, A., Seigal, T., de Louw, A., Praamstra, P., Horstink, M., Cools, A., Tarrats, E. Basart, Calopa, M., Martinez, S., Ballabrina, J., Taussig, D., Marion, M. -H., Mallecourt, J., Ranoux, D., Gasser, T., Kabus, C., Ozelius, L., Wenzel, R., Breakefield, X. O., Boot, H., Poublon, R. M. L., Bogaard, J. M., GinaÏ, A. Z., Cabezas, C., Scholz, J., Nitschke, N., Vieregge, P., Wirk, B., Hochberg, F. H., Hefter, H., Kessler, K., Wirrwar, A., Stocklin, G., Tournier-Lasserves, E., Agundez, J. Garcia, Ruiz, E., Li, X. P., Hedlund, P. B., Fuxe, K., Kulisevsky, J., Avila, A., Berthier, M. L., Gerard, J. -M., Cambier, J., Caucheteur, C., Deuschl, G., Köster, B., Scheidt, C., Lücking, C. H., Mena, M. A., Chedru, F., Oubary, P., Rondot, P., Anagnostou, C. N., Panagopoulos, C. P., Ziogas, D. E., Vermersch, P., Robitaille, Y., Gauvreau, D., Destée, A., Delacourte, A., Ficola, U., Marozzi, P., Piccoli, F., Janelidze, M., Shakarishvili, R., Gagoshidze, T., Vashadze, T., Tsiskaridze, A., Djannelidze, M., Trullen, J. M. Perez, Pardo, P. J. Modrego, Vazquez-Andre, M. L., Bail, L., Naccache, L., Gauvrit, J. L., Panisset, M., Boller, A. F., Giannini, M., Zanette, E., Di Cesare, S., Altieri, M., Maloteaux, J. M., Delwaide, C., Sciaky, M., Newman, S. K., Kennedy, A. M., Frackowiack, R. S. J., Warrington, E. K., Rossor, M. N., Martinez-Lage, Pablo, Martinez Lage, J. Manuel, Manubens, JosÇ M., Lacruz, Francisco, Larumbe, Rosa, Muruzabal, Javier, Locatelli, T., Cursi, M., Mauri, M., Liberati, D., Fornada, C., Iriarte, L. M., Lopez, M., Grilo, A., Repeto, M., Brasic, J. R., Barnett, J. Y., Sheitman, B. B., Young, J. G., Shalit, F., Brodie, C., Sredni, B., Engelien, A., Stern, E., Huber, W., Frith, C., Miralles, F., Albadalejo, M. D., Antem, M., Pastor, I., Estelies, M. A., Del Ser, T., Ochoa, H. Severo, Munoz, D., Hachinski, V., Cucinotta, D., Senin, U., Girardello, R., Crepaldi, G., Croria, F., Schens, D. B., Vigo-Pelfrey, C., SempereE, A. P., Ortega, M. P., Bava, L., Magni, E., Aronovich, B. D., Treves, T. A., Bornstein, N. M., Van Blercom, N., Blecic, S., Violon, Ph., Hildebrand, J., Zamboni, M., Ambrosoli, L., Poli, A., Kuehnen, J., Tilgner, C., Raltzig, M., Moering, B., Faiss, J., Deeb, S. M. Al, Daif, A., Sharif, H., Tatay, J., Caroeller, F., Avendano, C., Vinogradova, T., Pinto, A. N., Canhao, P., Neau, J. -Ph., Pacquereau, J., Meurice, J. -C., Schwab, M., Bauer, R., Deeb, M. AL, Tjan, T. J., Aabed, M., Berges, S., Crepin-Leblond, T., Chavot, D., Cattin, F., Snidaro, M. H., Chopard, J. L., Ley, C. Oliveras, Alameda, F., Alfonso, S., Podobnik-Sarkanji, S., Pniewski, J., Torbicki, A., Mieszkowski, J., Plaza, I., Petrunjashev, V., Velcheva, I., Hadjiev, D., Yancheva, S., Petrov, L., Karakaneva, S., Petkov, A., Nikolov, E., Niehaus, L., Sacchetti, M. L., Toni, D., Fiorelli, M., Gori, C., Argentino, C., Lyrer, Ph., Radu, E. W., Gratzl, O., Rondepierre, Ph., Leclerc, X., Marchau, Jr, M., Scheltens, Ph., Hamon, M., Janssens, E., Henon, H., Lucas, C., KuÇukoglu, H., Baybas, S., Dervis, A., YalÇiner, B., Yilmaz, N., Ozturk, M., Arpaci, B., Navarro, J. A., Arenas, J., Perez-Sempere, A., Egido, J. A., Soriano-Soriano, C., Beau, P., Gergaud, J. -M., Coudero, C., Dierckx, R. A., Dobbeleir, A., Timmermans, E., Vandevivere, J., Lucas, C. H., Gomez, M., Aguirre, J., Berenguer, A., Duran, C., Parrilla, J., Gonzalez, F., Gironell, A., Rey, A., Marti-Vilalta, J. L., de Lecinana, M. Alonso, Federico, F., Conte, C., Simone, I. L., Giannini, P., Liguori, M., Lucivero, V., Picciola, E., Tortorella, C., Drislane, F., Wang, A. Ming, Di Mascio, R., Marchioli, R., Vitullo, F., Di Pasquale, A., Sciulli, L., Kramer, V., Tognoni, G., Levivier, M., del Olmo, A., Caballero, E., Degaey, I., de Bruijn, S. F. T. M., Tchaoussoglou, I., Bastianello, S., Pozzilli, C., Cervello, A., Catala, N., Koskas, F., Kieffer, E., Botia, E., Vivancos, J., Leon, T., Segura, T., Ramo, C., Lopez, F., Karepov, V. G., Gur, A. J., Berlanga, B., Gracia, V., Fiol, C., Kurtel, H., Ozkutlu, U., Yegen, B., Grau, A. J., Buggle, F., Heindle, S., Steichen-Wiehn, C., Banerjee, T., Maiwald, M., Becher, H., Villafana, W., Medina, F., Fernandez-Real, J. M., Soler, S., Planas, E., Iceman, E., Doganer, I., Badlan, G., Genc, B., Yulug, K., Ideman, E., Dural, H., Kutlul, K., Damalik, G., Baklan, Y., Metin, B., Tekinsoy, E., Iriarte, I., Subira, M. L., Crockar, A. D., Treacy, M., McNell, T. A., Grazzi, L., Ediboglu, N., Bilgin, H., Ertas, S., Goument, J. -P., Basset, C., Campos, Y., Garcia-Silva, T., Cabello, A., Bussaglia, E., Tizzano, E., Colomer, J., Gimbergues, P., Campagne, D., Bommelaer, C., Delaguillaume, B., Ramtami, H., Ait-Kaci-Ahmed, M., Pascual L. F., Fernandez T., Hortells M., Sanz C., Morales F., Lauritzen, L., Picard, F., Sellal, F., Collard, M., Avramidis, T., Alexiou, E., Anastopoulos, T., Frongillo, D., Delfino, F. A., Cannata, M., Calo, L., Vichi, R., Antonini, G., Fragola, V., Cannata, D., Salas, M., Ruiz, C., Angelard, B., Lacau, J., Guily, St., Sendtner, M., Goadsby, Peter J., Quin, N. P., Gadian, D. G., Roland, P. E., Seitz, Rudiger J., Frackowiak, Richard S. J., Becker, G., Krone, A., Schmidt, K., Hofmann, E., Bogdahn, U., Rosenfeld, M. R., Meneses, P., Kaplitt, M. G., Dalmau, J., Posner, J., Cordon-Cardon, C., Hoang-Xuan, K., Vega, F., Nishisho, I., Moisan, J. P., Theillet, C., Delattre, O., Zhu, Jiahong, Walther, W., Posner, J. B., Roelcke, U., von Ammon, K., Pellikka, R., Lucking, C. H., Walon, C., Boucquey, D., -Van Rijckevorsel, K. Harmant, Lannoy, N., Verellen-Dunoulin, Ch., Liszka, U., Cavaletti, G., Casati, B., Kolig, C., Bogliun, G., Marzorati, L., Johannsen, L., Chio, A., Ruda, R., Vigliani, M. C., Sciolla, R., Seliak, D., Hoang-Xuang, K., Villanueva, J. A., Montalban, X., Arboix, A., Colosimo, C., Albanese, A., Hughes, A. J., de Bruin, V., Lees, A. J., Kowalski, J. W., Banfi, S., Santoro, L., Perretti, A., Castaldo, I., Barbieri, F., Campanella, G., Bhatia, K. P., Mardsen, C. D., de Bruin, V. S., Machedo, C., Ceballos-Baumann, D., Marsden, C. D., Brooks, D. B. J., Wennlng, G. K., Quinn, N., McDonald, W. l., Warner, T. T., Bain, P. C., Davis, M. B., Conway, D., Shaunak, S., O'Sullivan, E., Crawford, T., Lawden, M., Blunt, S., Rapoport, A., Sarova-Pinchas, I., de Beyl, D. Zegers, Mavroudakis, N., Blanc, S., Godinot, C., Lenoir, G., Barkhof, M. S. F., Tas, M. W., Baron, P. L., Constantin, C., Cassatella, M. A., Langdon, D. W., Webb, S., Gasparini, P., Zeviani, A., Kidd, D., Mammi, S., Cahalon, L., Hershkoviz, R., Lahat, N., Wallach, D., Annunziata, P., Martino, T., Maimone, D., Guazzi, G. C., Porrini, A. M., Dell'Arciprete, L., Rothwell, P. M., Stewart, R. R. C., Cull, R. E., Willmes, K., Poeck, K., Russell, D., Braekken, S. K., Brucher, R., Svennevig, J., Hermesl, M., Bruckmann, H., Biraben, A., Sliwka, U., Meyer, B., Schondube, F., Noth, J., Lavenu, I., Lammers, C., Waldecker, B., Haberbosch, W., Stam, J., Schneider, R., Gautier, J. C., Berlit, T. P., Fauser, B., Kuhne, D., Geraud, G., Danielli, A., Larrue, V., Bes, A., Timmerman, E., Bono, F., Bruni, A. C., Valalentino, P., Montesi, M. P., Talerico, G., Zappia, M., Sabatelli, M., Quattrone, A., Pareyson, D., Lorenzetti, D., Sghirlanzoni, A., Castellotti, B., Lupski, J. R., Archidiacono, N., Antonacci, R., Marzella, R., Rocchi, M., Samuel, D., Goulon-Goeau, C., Costa, P. P., Bismuth, H., Said, G., De Jongh P., Lofgren A., Timmerman V., Vance J. M., Van Broeckhoven C., Martin J. -J., Martinez, A. Cruz, Bort, S., Arpa, J., Misra, P., King, R. H. M., Badhia, K., Anderson, M., Caballo, A., Vichez, J., Gabriel, J. M., Erne, B., Miescher, G. C., Ulrich, J., Vital, A., Vital, C., Steck, A., Petry, K., Labatut, I., Hilmi, S., Ellie, E., Ferrini-Strambi, L., Zucconl, M., Marchettini, P., Palazzi, S., Oehlschlager, M., Pepinsky, R. B., Gemignani, F., Marbini, A., Pavesi, G., Di Vittorio, S., Manganelli, P., Mancia, D., Vermersh, P., Roche, J., Durocher, A. M., Dewailly, Ph., Dettmers, C., Fink, G., Lemon, R., Stephan, K., Passingham, D., Weder, B., Knorr, U., Huang, Y., Butterfield, D. A., Peris, M. L., Peiro, C., Pascual, A. Pascual-Leone, Bottini, G., Folnegovic-Smalc, V., Knezevic, S., Bokonjic, R., Ersmark, B., Torres, M. Gonzalez, Guiraud-Chaumeil, B., Haugaard, K., Jovicic, A., Chr, Lang, Levic, Z., Parra, C. Martinez, Ochoa, J. Patrignani, Titlbach, O., Wikkelso, C., Caparros-Lefevre, D., Debachy, B., Verier, A., Cantinho, G., Santos, A. I., Godinho, F., Bagunya, J., Roig, T., Ensenyat, A., Santiag, O., Trabucchi, H., De Leo, D., Koch, Ch., Zeumer, H., Matkovic, Z., Morris, P., Donaghy, M., Köhler, W., Kammer, T., Röther, J., Navon, R., Fontaine, B., Wu, Y., Capdevila, A., Guardiola, M. J., van Dijk, G. W., Notermans, N. C., Kruize, A. A., Kater, L., Bertelt, C., Hesse, S., Friedrich, H., Mauritz, K. -H., Giron, L. T., Watanabe, I. S., Ewing, D., Koepp, M., Lempert, T., Sander, B., Kauerz, U., Mehdorn, H. M., Hezel, J., Eickhoff, W., Kryst, T., Timsit, S., Gardeur, D., Reis, Mitermayer Galvao dos, Secor, E., Filho, A. Andrade, Silva, M. Cardoso, Santos, S. R. Silveira, Vasilaski, G., Reis, E. A. dos, Velupillai, P., Harn, D. A., Tigera, J. Garcia, Dreke, R. Martinez, Crespo, R. Piedra, Besses, C., Acin, P., Massons, J., Florensa, L., Oliveres, M., Sans-Sabrafen, J., Wicklein, E. M., Pleiffer, G., Kunre, K., Dieterich, M., Brandt, Th., Guarino, M., Stracciari, A., Pazzaglia, P., D'Alessandro, R., Santilli, I., Donato, M., The European Velnacrine Study Group, The Dutch Guillain-Barré study group, The COP-1 Multicenter Clinical and Research Group Study, and European Study Group

Published
1994
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38. Dislocation core structures in (0001) InGaN.

Author

Rhode, S. L., Horton, M. K., Sahonta, S.-L., Kappers, M. J., Haigh, S. J., Pennycook, T. J., McAleese, C., Humphreys, C. J., Dusane, R. O., and Moram, M. A.

Subjects
GALLIUM nitride, SCANNING transmission electron microscopy, ALLOYS, INDIUM, MONTE Carlo method
Abstract

Threading dislocation core structures in c-plane GaN and InxGa1-xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1-xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1-xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1-xN, consistent with predictions from atomistic Monte Carlo simulations. [ABSTRACT FROM AUTHOR]

Published
2016
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39. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers.

Author

Davies, M. J., Hammersley, S., Massabuau, F. C.-P., Dawson, P., Oliver, R. A., Kappers, M. J., and Humphreys, C. J.

Subjects
OPTICAL properties, QUANTUM wells, INDIUM gallium nitride, PHOTOLUMINESCENCE, EXCITATION spectrum
Abstract

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes. [ABSTRACT FROM AUTHOR]

Published
2016
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42. Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes.

Author

Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Oliver, R. A., Humphreys, C. J., Allsopp, D. W. E., and Martin, R. W.

Subjects
CATHODOLUMINESCENCE, ELECTRIC conductivity, INDIUM gallium nitride, LIGHT emitting diodes, LOW temperatures
Abstract

In this paper, we present a combined cathodoluminescence (CL) and electron beam induced current (EBIC) study of the optical and electrical properties of InGaN light emitting diodes grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2 T), whereas in the other device, each barrier was grown in a two step process with the first few nanometers at a lower temperature (Q2T). It was found that in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2 T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal. [ABSTRACT FROM AUTHOR]

Published
2015
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43. Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors.

Author

Zaidi, Z. H., Lee, K. B., Guiney, I., Qian, H., Jiang, S., Wallis, D. J., Humphreys, C. J., and Houston, P. A.

Subjects
HYDROGEN peroxide, REFRIGERANTS, SEMICONDUCTORS, SULFURIC acid, ELECTRONS
Abstract

In this work, we have compared SiNx passivation, hydrogen peroxide, and sulfuric acid treatment on μlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 lμ/mm, which is much lower than that for SiNx passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 104-105 to 107) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid is believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (Dit) is reduced (from 4.86 to 0.90×1012cm-2 eV-1), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiNx passivation after full device fabrication results in the reduction of Dit and improves the surface related current collapse. [ABSTRACT FROM AUTHOR]

Published
2014
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44. Comparative study of polar and semipolar ... InGaN layers grown by metalorganic vapour phase epitaxy.

Author

Dinh, Duc V., Oehler, F., Zubialevich, V. Z., Kappers, M. J., Alam, S. N., Caliebe, M., Scholtz, F., Humphreys, C. J., and Parbrook, P. J.

Subjects
INDIUM gallium nitride, VAPOR phase epitaxial growth, GALLIUM nitride, INDIUM, TEMPERATURE
Abstract

InGaN layers were grown simultaneously on ... GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content (<15%) of the ... and (0001) InGaN layers was similar. However, for temperatures less than 750 C, the indium content of the ... InGaN layers (15%-26%) were generally lower than those with (0001) orientation (15%-32%). The compositional deviation was attributed to the different strain relaxations between the ... and (0001) InGaN layers. Room temperature photoluminescence measurements of the ... InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the ... InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50-60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers. [ABSTRACT FROM AUTHOR]

Published
2014
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45. Structure and strain relaxation effects of defects in InxGa1-xN epilayers.

Author

Rhode, S. L., Fu, W. Y., Moram, M. A., Massabuau, F. C.-P., Kappers, M. J., McAleese, C., Oehler, F., Humphreys, C. J., Dusane, R. O., and Sahonta, S.-L.

Subjects
GALLIUM nitride, SILICON research, SUBSTRATES (Materials science), METAL organic chemical vapor deposition, EPITAXY
Abstract

The formation of trench defects is observed in 160nm-thick InxGa1-xN epilayers with x ≤ 0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench defect density increases with increasing indium content, and high resolution transmission electron microscopy shows an identical structure to those observed previously in InGaN quantum wells, comprising meandering stacking mismatch boundaries connected to an I1-type basal plane stacking fault. These defects do not appear to relieve in-plane compressive strain. Other horizontal subinterface defects are also observed within the GaN pseudosubstrate layer of these samples and are found to be pre-existing threading dislocations which form half-loops by bending into the basal plane, and not basal plane stacking faults, as previously reported by other groups. The origins of these defects are discussed and are likely to originate from a combination of the small in-plane misorientation of the sapphire substrate and the thermal mismatch strain between the GaN and InGaN layers grown at different temperatures. [ABSTRACT FROM AUTHOR]

Published
2014
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46. Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode.

Author

Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Allsopp, D. W. E., Oliver, R. A., Humphreys, C. J., and Martin, R. W.

Subjects
CATHODOLUMINESCENCE, ELECTRON beam research, LIGHT emitting diodes, INDIUM gallium nitride, ELECTROLUMINESCENCE, QUANTUM confined Stark effect
Abstract

Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2-10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30-40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (~100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN. [ABSTRACT FROM AUTHOR]

Published
2014
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49. Mechanical properties of graphene.

Author

Sun, Y. W., Papageorgiou, D. G., Humphreys, C. J., Dunstan, D. J., Puech, P., Proctor, J. E., Bousige, C., Machon, D., and San-Miguel, A.

Subjects
GRAPHENE, CARBON nanotubes, GRAPHITE, ELASTIC constants, NANOTUBES, PHONONS
Abstract

This paper reviews the mechanical properties of graphene with particular attention to what is established and what is still uncertain. It clarifies the thickness and the elastic constants, and by also considering also phonon frequencies, it argues that "best values" come from graphite, when available. Properties not available from graphite include bending stiffness; this can be determined from studies of carbon nanotubes as well as graphene. In many ways, nanotubes provide access to fundamental properties of graphene, not least because they are the only form of graphene that can be unsupported (unstrained) in vacuum. Environmental effects are considered, including both interactions with substrates and with other solid and liquid media, which may affect the geometrical parameters defining graphene and associated elastic constants. Major uncertainties persist whether slipping or sticking dominates experimental observation, both between graphene and solid media, and between the layers of bilayer and multilayer graphene. The paper concludes with a short discussion of continuum and atomistic models of graphene. [ABSTRACT FROM AUTHOR]

Published
2021
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