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We have designed a flexible photoelectric artificial synapse with an oxide/mixed perovskite/polymer N-I-P structure that exhibits essential synaptic plasticity. Formamidinium lead triiodide FAPbI3 perovskite doped with bromine and methylammonium (FAxMA1−xPbI2Br) is employed as the intrinsic layer to improve the optical properties of devices. Without requiring a power source in reaction to outside optical spikes, multiple pulse-dependent plasticity is reproduced on the synaptic devices, and the image's edges are sharpened using high-pass filtering. Additionally, the classical conditioning and spatiotemporal learning are copied under the electric pulse excitation. Significant negative differential resistance is evident, even after 1500 flex/flat mechanical operation. The recognition rate of letters in the visual system is as high as 92%, and the walking distance in the efferent neuromuscular system is controllable. The flexible optoelectronic N-I-P synaptic device is designed to facilitate energy-efficient information processing for neuromorphic computing. [ABSTRACT FROM AUTHOR]

Objective To establish an effective CRISPR-Cas9 system targeting at mouse Krt14 that may simulate the pathogenic site mutation of human KRT14. Methods Databases such as OMIM, ExAC and ClinVar were retrieved to identify the strong pathogenic sites of human KRT14, the causative gene of human epidermolysis bullosa simplex. Then, the human and mouse KRT14 protein sequence alignment analysis was carried out to identify the strong pathogenic sites on the mouse genome. Based on the gene targeting principle of the CRISPR-Cas9 system, 4 sgRNAs targeting the mouse Krt14 and 4 expression plasmids were constructed. Then, the sgRNA expression plasmids and Cas9 expression plasmid were co-transfected into mouse NIH 3T3 cells simultaneously. PCR product sequencing, TA clone sequencing of the positive cells screened by drugs were performed to verify the target efficiency of the 4 sgRNAs. Results The p.Arg125 site of human KRT14 protein was identified to be a strong pathogenic site, which corresponded to the p.Arg131 site of mouse KRT14 protein. According to the DNA sequence of the mouse p.Arg131 site, 4 sgRNA expression plasmids targeting at this site was successfully constructed. Sequencing of PCR amplification products of the target site from drug screen positive cells showed that 4 sites were all mutated. The results of TA cloning sequencing showed that the mutation efficiency of the four sites was 70%, 90%, 65% and 100% respectively. Conclusions The above results indicates that efficient CRISPR-Cas9 system targeting at the mouse Krt14 based on the highly pathogenic sites of the human KRT14 has successfully constructed. This result lays a foundation for the in-depth study of Krt14 function and for the establishment of Krt14 gene editing mouse model in order to explore the mechanism and treatment strategy of disease.

Self‐powered near‐infrared (NIR) photodetectors utilizing low‐dimensional materials are promising owing to their low‐power‐consumption and superior photoresponse performance. The strong light‐matter interaction and other intriguing physical mechanisms (such as high mobility, dangling‐bond‐free surface) in 2D semiconductor materials, combined with the flexible fabrication of device structures, create new opportunities for the optoelectronic devices. Here, a self‐powered NIR Schottky junction photodetector is demonstrated by vertically stacking 2D PtSe2 film atop an InP wafer. The strong built‐in electric field formed at PtSe2/InP interface endows the device with self‐powered operation with an ultralow dark current of 45 pA at room temperature under 0 V bias. The responsivity and detectivity at 940 nm illumination reach up to 0.718 A W−1 and 4.37 × 1012 Jones, respectively. Furthermore, TCAD simulations showed that the significant electric field at the PtSe2/InP interface is pivotal for its superior self‐powered detection performance. Remarkably, the device achieves a high Ilight/Idark ratio exceeding 105 and a fast response time of 4.35/5.66 µs, and sensitivity to NIR light polarization. This study provides a new perspective for the integration of hybrid 2D materials with 3D semiconductors in the next‐generation optoelectronic devices and integrated systems. [ABSTRACT FROM AUTHOR]

Exploitation of low‐dimensional metal‐oxide semiconductor nanowires (MOS NWs) with peculiar and radial coaxial architectures is of great significance for constructing nanoscale, high‐performance, multi‐module integrable functional electronic products. Here, highly ordered In2O3@ZnO coaxial NW arrays (CNWA) using a simple and economical electrospinning technique are synthesized and assembled into field‐effect transistors (FETs). Featuring strong carrier effusion efficiency at the In2O3@ZnO circular heterogeneous interface, the field effect mobility (εFE) gets an intrinsic improvement and can reach as high as 202.3 cm2 V‒1 s‒1 for high‐k‐based CNWA FETs, which exceeds the performance of oxide‐based FETs devices reported by far. Furthermore, the unique structural advantages endowing In2O3@ZnO CNWA FETs with excellent optoelectronic coupling capabilities are identified, for which further optoelectronic detection and artificial photonic synaptic devices are constructed and functional simulations are implemented. This work offers new insights in designing optoelectronics and artificial synapses to process and recognize information for neuromorphic computing and artificial intelligence applications. [ABSTRACT FROM AUTHOR]

Accurate and quantifiable detection of the specific wavelength is vital in different application scenarios. Herein, a novel self‐driven narrowband photodetector (NB‐PD) based on CH(NH2)2PbBr2.5I0.5 crystal film is employed for building a yellow light intensity meter. By taking advantage of the carrier collection narrowing mechanism, a sensitive NB‐PD with peak response at 580 nm and the full‐width at half‐maximum of 23 nm are successfully achieved. The asymmetric contact electrodes of Ag/Pt allow the device to work without bias. The optoelectronic analysis demonstrates that the NB‐PD achieves a maximum responsivity of 59.89 mA W−1, a fast response speed of 202/331 µs, and a high on/off ratio of 636 at zero bias. Then, through introducing the back‐end circuit, a yellow light intensity meter is constructed with the NB‐PD. The absolute error and relative error of the light meter are estimated to be lower than 0.08 mW cm−2 and 4.22%, respectively, indicating the good capability for the yellow light monitoring. Given the simple device geometry and good performance, the achieved yellow light intensity meter can also be extended to other narrowband light detection system. [ABSTRACT FROM AUTHOR]

High‐precision spectral detection and broadband wavelength sensors have attracted considerable interest for important application in color image sensing. Due to the absorption limitations of silicon, conventional complementary metal–oxide–semiconductors have a relatively limited wavelength region from the ultraviolet to near‐infrared spectrum. Here, a simple‐structured device is developed by assembling two back‐to‐back monolayer graphene (MLG)/Si/MLG heterojunctions for high‐resolution wavelength sensing applications. The single MLG/Si/MLG photodetector exhibits a responsivity of 0.18 A W−1, a specific detectivity of 1.36 × 109 Jones, and an external quantum efficiency of 28.5%. Thanks to the unique device geometry, the distribution of photo‐generation rates in the two photodetectors is completely different, which brings about different photoelectric properties. It is found that the relationship between the photocurrent ratio of both photodetectors and the light wavelength can be fitted by a monotonic function, according to which the wavelength of incident light in the range from 260 to 1050 nm can be accurately estimated. A high resolution of 1 nm is demonstrated across a broadband wavelength from 260 to 1000 nm. This good resolution, along with good repeatability and stability, endow the present device with potential promise in future spectral sensing applications. [ABSTRACT FROM AUTHOR]

A narrowband photodetection system that can specifically distinguish green, yellow and red light has potential application in intelligent transportation systems. In this work, a series of MAPbBr3−nXn (X = Cl, I) single-crystal films with controllable thickness have been grown through space-limited inverse temperature crystallization. Filter-free narrowband photodetectors with peak responses at 505, 590 and 620 nm, corresponding to the green, yellow and red of traffic lights, are successfully achieved through the charge collection narrowing mechanism. The as-fabricated narrowband photodetectors demonstrate superior performance, with full width at half-maximum all less than 35 nm, a maximum responsivity of 182 mA W−1, and specific detectivity of 9.68 × 1010 Jones. Finally, a traffic light recognition assembly based on the three narrowband photodetectors is constructed. The photocurrent of the photodetector is approximately five to ten times that of the interference from other light sources, indicating good color recognition capability for traffic lights. [ABSTRACT FROM AUTHOR]

In this study, a solution method derived dual‐band photodetector (PD) based on silicon nanowires /PbS nanocrystalline film n–n heterojunction, which exhibits typical bias‐selectable spectral response in both near‐infrared (NIR) and short‐wave infrared (SWIR) bands, is presented. It is found that by adjusting the polarity of the bias voltage, the photoresponse of the device can be switched between three operation modes. The device exhibits high responsivities of 2100 mA W−1 at −0.15 V and 31 mA W−1 at 0 V, respectively, in the NIR region. Remarkably, the maximum responsivity and detectivity under 2000 nm illumination are determined as 290 mA W−1 and 2.4 × 1010 Jones, comparable to or even better than some PbS commercial PDs. The enhanced performance comes from the improved optical absorption and higher efficiency of charge separation and collection owing to the heterojunction geometry. It's also revealed that the bias‐controllable spectral response is attributed to the selectively transportation of photocarriers across the junction barrier. The study demonstrates the capability of detecting two distinct IR regions with the same pixel, which has great potential in future optoelectronic systems for IR imaging applications. [ABSTRACT FROM AUTHOR]

Dual-band photodetectors (DBPDs) have played an essential role in multispectral information monitoring, including in civil and military areas. Traditional multispectral detectors usually consist of multiple monochromatic detectors or use filters to achieve specific wavelength detection. Needless to say, the additional detectors and optical components usually increase the physical volume leading to high costs, which are not conducive to commercial promotion. In this work, we fabricate a DBPD by using a silicon nanowire array (Si NW) with a diameter of 140 nm. According to COMSOL simulations, leaky mode resonances (LMRs) (HE11, HE12) in Si NWs with a diameter from 120 nm to 150 nm lead to a dual-band absorption phenomenon. The device analysis shows two peak responsivities which are 353 μA W−1 under 430 nm illumination and 487 μA W−1 under 660 nm illumination, respectively, at zero bias voltage. This result coincides well with the simulations and provides practical support for the silicon-based wavelength-selective spectral detection device. [ABSTRACT FROM AUTHOR]

Ultraviolet (UV) photodetectors (PDs) have found widespread application in various fields, such as environmental protection, life sciences, secure communications, automated systems, and missile tracking, which renders UVPDs the most important component in modern optoelectronic devices and systems. In the past decade, a large number of UVPDs with various device structures and fast response speed have been reported. While most of the UVPD devices are usually assembled from Si and other semiconductor materials, II–VI group semiconductors (ZnS, ZnSe, etc.), which have a wide bandgap and high exciton binding energy, are regarded as potentially important candidates for high-performance UVPD application as well. In this review, we comprehensively discuss the basic concepts and operation mechanisms of UVPDs, which are key factors for rational comparison between different photodetectors. In addition, the main research status of UVPDs based on II–VI group semiconductors is reviewed. Some emerging techniques to optimize device performance are discussed as well. Due to the trade-off between the two key parameters of the responsivity and response time, the ultimate performance of some II–VI group semiconductor-based UVPDs remains inadequate. And then, the initial applications based on II–VI group semiconductor photodetectors are mentioned. Finally, the current challenges and future directions of II–VI group semiconductor-based UVPDs are outlined and discussed, and general advice for realizing novel high-performance photodetectors and their applications is given to provide a guideline for the future development of this fast-developing field. [ABSTRACT FROM AUTHOR]

Ultraviolet photodetectors (UVPDs) which play important roles in military and civil applications are normally fabricated by using wide band gap semiconductors (WBSs) as building blocks. Unfortunately, the commercialization of UVPDs based on WBSs is often limited by their relatively high fabrication cost owing to the use of very complicated growth instruments. In this work, a sensitive UVPD based on non-WBS lead sulfide (PbS) with a relatively small band gap was proposed. Device analysis revealed that the UVPD made of 48.5 nm PbS nanofilm was highly sensitive to UV illumination at 365 nm. Specifically, the responsivity and specific detectivity under 365 nm illumination were 22.25 A W–1 and 4.97 × 1012 Jones, respectively, which are comparable to or better than most of the conventional WBS-based UVPDs. The PbS nanofilm-based UVPD also exhibits excellent environmental stability. Experimental results and simulations based on technology computer-aided design software confirmed that the abnormal properties of PbS nanofilms are related to the relatively thin thickness and wavelength-dependent absorption coefficients. These results open up an opportunity for narrow band gap semiconductors to realize low-cost-sensitive UVPDs in future optoelectronic devices and systems. [ABSTRACT FROM AUTHOR]

This paper reports a near-infrared wavelength sensor composed of two stacked monolayer graphene (MLG)/Ge heterojunction devices, which could enable the determination of the wavelength quantitatively. Since the absorption coefficient of Ge is wavelength dependent, the technical computer-aided design simulation shows a significant difference in the photon generation rate distribution of the two MLG/Ge photodetectors. Such a variation in photon absorption leads to a completely different evolution of the photocurrent in the stacked devices. Further experimental analysis found that the correlation between the photocurrent ratio (I1/I2) of the two MLG/Ge heterojunctions and the wavelength can be easily expressed using a monotonic function, by which the wavelengths in the near-infrared light range (880 nm to 1650 nm) could be calculated. It is worth noting that the detection band could be appropriately adjusted by changing the thickness of the Ge sheet employed in the photodetector. Moreover, the average relative error and average absolute error of the wavelength sensor are estimated to be 0.5% and 6.1 nm, respectively, which is comparable to the most investigated visible band wavelength sensor. [ABSTRACT FROM AUTHOR]

In this work, a wavelength sensor that is capable of quantitatively distinguishing the wavelength in the range of ultraviolet (UV) to near-infrared (NIR) light (265–1050 nm) is presented. The wavelength sensor is fabricated by depositing two parallel Au electrodes on the two sides of a $200 ~\mu \text{m}$ Si wafer. It is found that the as-formed two photodetectors display completely different optical properties. And then, the relationship between the photocurrent ratio of two photodetectors and incident wavelength can be described as a numerical function, through which the wavelength from 265 to 1050 nm can be precisely calculated. The unique operation mechanism of the Si wavelength sensor is unveiled by technology computer-aided design (TCAD) simulation. Remarkably, the wavelength sensor easily distinguishes the light with a wavelength difference of 1 nm, which is much better than previously reported devices based on the vertically stacked structures and charge collection narrowing mechanism. [ABSTRACT FROM AUTHOR]

A desired water splitting photocatalyst should not only possess a suitable bandgap and band edge position, but also host the spontaneous progress for overall water splitting without the aid of any sacrificial agents. In this work, we propose a two-dimensional CdS/SnS2 heterostructure (CSHS) as a possible water splitting photocatalyst by first-principles calculations. The CSHS enhances the absorption of visible and infrared light, and the type-II band alignment guarantees the spatial separation of the photoinduced carriers. The induced built-in electric field across the CSHS interface efficiently separates the photoexcited carriers and extends their carrier lifetimes. All these properties make the CSHS a direct Z-scheme system with the hydrogen and oxygen evolution reactions occurring, respectively, at the CdS and SnS2 layers. More encouragingly, the introduction of a S-vacancy into SnS2 could effectively lower the overpotential of the oxygen evolution reaction, thus ensuring the overall water redox reaction to be achieved spontaneously under light irradiation. Our findings suggest that the CSHS is a promising water splitting photocatalyst. [ABSTRACT FROM AUTHOR]

In this paper, a broadband wavelength sensor which is composed of two horizontally stacked photodetectors is reported. The top part is a monolayer graphene (MLG)/thin Si/MLG heterojunction device and the bottom part is a MLG/Ge Schottky junction device. Owing to the thin thickness of the Si and the wavelength‐dependent absorption coefficients of both Si and Ge, the two photodetectors exhibit sharp contrast in photon‐generation rate when illuminated with different wavelengths of light. This distinction in photon generation leads to completely different evolution in photocurrent, and the corresponding relationship between the photocurrent ratio and wavelength can be easily expressed as a monotonic function, via which the wavelength in a broad range from deep ultraviolet (265 nm) to near infrared light (1550 nm) can be easily calculated. Notably, the average relative error and the average absolute error of the wavelength sensor are estimated to be 2.1% and 2.3 nm, respectively, which are much better than previously reported values. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) pseudohexagonal ZnSe (h -ZnSe) nanosheet has been sythesized and demonstrated to be a stable, cut-price and high-efficiency photocatalyst under the irradiation of ultraviolet light. Herein, we use hybrid density functional theory to rationally design the charge-compensated codoped h -ZnSe sheets, which are simulated by substituting Sb for Se atom, and Sc or Y for Zn atom, for visible-light-driven photocatalytic water splitting to produce hydrogen. It is demonstrated that the Sc–Sb and Y–Sb codoped sheets are energetically favorable compared with Sc, Y, Sb-monodoped sheets because dopants have strong Coulombic interactions with other atoms, and moreover, have the effectively reduced bandgap, the larger absorption region of visible light, and appropriate band edges positions with respect to the water redox level. Meanwhile, compared to monodoped sheets, the codoped sheets do not introduce charge-imbalance defects or unoccupied impurity states which promote the electron-hole recombination. Furthermore, the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) are easier driven by photogenerated carriers due to the largely reduced overpotentials and ample active sites on the codoped sheets. Thus, the Sc–Sb and Y–Sb codoped h -ZnSe sheets can be promising photocatalysts for visible-light-driven water decomposition to generate hydrogen. [Display omitted] • Sc-or Y-Sb passivated codoping can effectively reduce band gap of pseudohexagonal ZnSe sheet. • Codoped ZnSe sheets have suitable positions of band edges with respect to the water redox potentials. • Codoping can promote the visible light absorption of ZnSe sheet. • Codoping can reduce the overpotential of ZnSe sheet for OER and HER. • Sc-or Y-Sb codoped ZnSe sheets are promising visible-light-driven photocatalyst. [ABSTRACT FROM AUTHOR]

BiVO4, a visible-light response photocatalyst, has shown tremendous potential because of abundant raw material sources, good stability and low cost. There exist some limitations for further applicaitions due to poor capability to separate electron–hole pairs. In fact, a single-component modification strategy is barely adequate to obtain highly efficient photocatalytic performance. In this work, P substituted some of the V atoms from VO4 oxoanions, namely P was doped into the V sites in the host lattice of BiVO4 by a hydrothermal route. Meanwhile, Ag as an attractive and efficient electron-cocatalyst was selectively modified on the (010) facet of BiVO4 nanosheets via facile photo-deposition. As a result, the obtained dually modified BiVO4 sheets exhibited enhanced photocatalytic degradation property of methylene blue (MB). In detail, photocatalytic rate constant (k) was 2.285 min−1 g−1, which was 2.78 times higher than pristine BiVO4 nanosheets. Actually, P-doping favored the formation of O vacancies, led to more charge carriers, and facilitated photocatalytic reaction. On the other hand, metallic Ag loaded on (010) facet effectively transferred photogenerated electrons, which consequently helped electron–hole pairs separation. The present work may enlighten new thoughts for smart design and controllable synthesis of highly efficient photocatalytic materials. [ABSTRACT FROM AUTHOR]

Self‐piercing riveting (SPR) has been used to joint steel to aluminum alloy sheets in multimaterial car body. It is a challenge to joint high strength steel to aluminum alloy by SPR process, especially for materials with high strength and large thickness. Herein, the SPR process for 1500 MPa hot stamped steel and aluminum alloy sheets is studied by experiment and simulation method. The laser heat treatment process is applied to the hot stamped steel sheet before joining. The relationship between heat treatment process and hardness distribution is studied and the softening zone with hardness less than 300 HV is obtained. Furthermore, the local softening zone is joined to an aluminum alloy sheet by SPR process. In the process, the rivets with high hardness are used to pierce the steel sheet. The failure mode and maximum tensile shear force of the joint are studied. At the same time, the joints without laser heat treatment are compared. The results show that the interlock and the maximum shear force for laser heat treatment increase by 91% and 26%, respectively. [ABSTRACT FROM AUTHOR]

FES1A is a heat shock protein 70 binding protein. Mutation of FES1A leads to a defect in thermotolerance of Arabidopsis ; however, independent fes1a mutants exhibit a range in the extent of thermosensitivity. Here, we found that BRF2 , a gene adjacent to FES1A and encoding a component of transcription factor IIIB, affects the thermosensitivity of fes1a mutants. Knockout of BRF2 suppressed fes1a thermosensitivity, while overexpression of BRF2 increased thermosensitivity of fes1a. BRF2 in fes1a mutants regulates the transcriptional strength of RNA Polymerase II and accumulation of heat shock proteins and eventually affects the thermotolerance of fes1a. There is a cross-talking between RNA Pol III and Pol II. The cross-talking is initiated by BRF , magnified by the mutation of FES1A, and finally has an effect on thermotolerance. [ABSTRACT FROM AUTHOR]

[Display omitted] • A novel, environmental benign, boosted Lay-by-Layer assembly approach was provided. • Functional cotton displayed excellent flame retardancy via both gaseous and condensed phases. • The concept of π − π stacking to help improve durability for Lay-by-Lay coating was first to put forward here. Layer-by-Layer (LbL) assembly was attractive as a versatile tool to address the flammability of cotton, while the washing fastness of LbL coating stayed an issue. Aiming to tackle this issue, LbL layers consisted of phenylphosphonic acid (PHA) and 3-aminopropyltriethoxysilane (APTES) was deposited on polydopamine (PDA)-coated cotton. The prepared cotton reached 31.4% of limiting oxygen index (LOI), and extinguished immediately after removing the ignitor. Peak of heat release rate (pHRR) attenuated around 36 % compared with pure cotton. A combined barrier and quenching mechanisms were proposed. Moreover, enhanced washing durability (24.1% of LOI) was achieved even after 50 detergent laundering cycles. A facile, boosted LbL approach with proposed π − π stacking interactions between PDA abundant aromatic structures and benzene ring in PHA from LbL layers, is first to put forward to construct durable efficient flame retardant (FR) cotton. This work attempted to enlighten more thoughts and design for durable FR cotton fabrics. [ABSTRACT FROM AUTHOR]

This study was aimed at investigating the effects of carbon nanomaterials with different geometries on improving the flame retardancy of magnesium hydroxide–filled ethylene-vinyl acetate (EM). The thermal stability and flame retardancy were studied by thermogravimetric analysis (TGA), limiting oxygen index (LOI), UL-94 test, and cone calorimeter test (CCT). The in situ temperature monitoring system and interrupted combustion offered direct evidence to link flame retardancy and composite structure. Results demonstrated that carbon nanomaterials enhanced the thermal stability and fire safety of EM. The geometry of carbon nanomaterials played a key role in synergistic flame retardancy of EM, with the flame-retardant order of carbon nanotube > nanoscale carbon black > graphene. Based on an online temperature monitoring system and interrupted combustion test, one-dimensional carbon nanotube was more inclined to form the network structure synergistically with magnesium hydroxide in ethylene-vinyl acetate, which facilitated the generation of more continuous char structure during combustion. In parallel, the mechanical property was characterized by a tensile test and dynamic mechanical analysis (DMA). The incorporation of carbon nanomaterials presented a limited effect on the mechanical properties of the EM system. [ABSTRACT FROM AUTHOR]

The TFIIB-related factor (BRF) family plays vital roles in RNA polymerase (Pol) III transcription initiation. However, little is known about the role of BRF in plants. Here, we report BRF1 and BRF2 are involved in Arabidopsis reproduction. In this study, we generated BRF1 and BRF2 double mutant plants. We found that no homozygous double mutants of brf1brf2 were obtained when brf1 and brf2 were crossed, although brf1 and brf2 mutants individually developed and reproduced normally. Further experiments revealed that heterozygous brf1/ + brf2/ + produced abnormal pollen and had no seeds in some placentas of siliques. Genetic data derived from reciprocal crosses showed that BRF2 plays a dominant role in Arabidopsis reproduction. Taken together, a double mutation of BRF1 and BRF2 results in a high degree of aborted macrogametes and microgametes and complete failure in zygote generation, ultimately leading to sterility. • Homozygous double mutants of brf1 brf2 were not obtained in any of our crosses. • The anthers and the siliques in the F2 population from crossing brf1 with brf2 exhibited abnormal pollen and absence of seeds in placentas. • Genetic data derived from reciprocal crosses showed that BRF2 plays a dominant role in Arabidopsis reproduction. • Double mutation of BRF1 and BRF2 results in complete failure in zygote generation, ultimately leading to sterility. [ABSTRACT FROM AUTHOR]

Graphical abstract Waste coffee grounds were catalytically carbonized into functional carbon materials and used as high-efficient adsorbent for organic dyes. Highlights • Biowaste coffee grounds were converted into functional carbon materials. • The carbon yield was as high as 47.6 wt% via direct catalysis by 20 wt% FeCl 3. • The synthesized carbon achieved high surface area and mesoporous structure. • The functional carbon was effective for the removal of different dyes. • The obtained carbon can be magnetically separated and reused multiple times. Abstract Functional carbon materials have been fabricated through simple and effective catalytic carbonization with waste coffee grounds (CGs) as carbon precursor and FeCl 3 as catalyst. The effect of FeCl 3 loading and carbonization temperature on carbon yield was investigated. The morphology and structure of as-synthesized carbons was characterized by scanning electron microscope (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and nitrogen isothermal adsorption/desorption measurement, respectively. Furthermore, the carbon materials showed high efficiency for the removal of methylene blue (MB, 653.6 mg g−1), methyl orange (MO, 465.8 mg g−1) and rhodamine B (RB, 366.1 mg g−1). More importantly, the carbon was magnetic, so it can be easily separated by a magnet and reused multiple times. This work not only exploited a low–cost and large-scale preparation method to synthesize functional carbon materials from bioresources, but also provided an eco-friendly and effective adsorbent in water purification applications. [ABSTRACT FROM AUTHOR]

High-performance semiconductor devices capable of multiple functions are pivotal in meeting the challenges of miniaturization and integration in advanced technologies. Despite the inherent difficulties of incorporating dual functionality within a single device, a high-performance, dual-mode device is reported. This device integrates an ultra-thin Al 2 O 3 passivation layer with a PbS/Si hybrid heterojunction, which can simultaneously enable optoelectronic detection and neuromorphic operation. In mode 1, the device efficiently separates photo-generated electron-hole pairs, exhibiting an ultra-wide spectral response from ultraviolet (265 nm) to near-infrared (1650 nm) wavelengths. It also reproduces high-quality images of 256 × 256 pixels, achieving a Q-value as low as 0.00437 µW cm - 2 . Meanwhile, when in mode 2, the as-assembled device with typical persistent photoconductivity (PPC) behavior can act as a neuromorphic device, which can achieve 96.5% accuracy in classifying standard digits underscoring its efficacy in temporal information processing. It is believed that the present dual-function devices potentially advance the multifunctionality and miniaturization of chips for intelligence applications.- 2 . Meanwhile, when in mode 2, the as-assembled device with typical persistent photoconductivity (PPC) behavior can act as a neuromorphic device, which can achieve 96.5% accuracy in classifying standard digits underscoring its efficacy in temporal information processing. It is believed that the present dual-function devices potentially advance the multifunctionality and miniaturization of chips for intelligence applications., (© 2024 Wiley‐VCH GmbH.)