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In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS, and the material and device parameters that mostly affect it based on the evidence reported. We conclude that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS can have toward high-performance computing with low-energy dissipation and quantum technologies. [ABSTRACT FROM AUTHOR]

Here, we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based superconductors (e.g., NbN or NbTiN) for the realization of superinductors and high-quality factor resonators, whereas the high normal-state resistance yields a large output voltage in superconducting switches and logic elements realized upon this compound. Moreover, out-of-plane critical magnetic fields exceeding 2 T ensure that possible applications requiring high magnetic fields can also be envisaged. Altogether, these features make this material appealing for a number of applications in the framework of quantum technologies. [ABSTRACT FROM AUTHOR]

The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metal-oxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant. [ABSTRACT FROM AUTHOR]

Non-reciprocal charge transport in supercurrent diodes (SDs) has polarized growing interest in the last few years for their potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid superconductor/semiconductor structures or metallic systems subject to moderate magnetic fields, thus showing limited potentiality for practical applications in SCE. Here, we report the design and realization of a monolithic device that shows a valuable SD effect by exploiting a Dayem bridge-based superconducting quantum interference device. Our structure allows reaching rectification efficiencies (η) up to ∼ 6 %. Moreover, the absolute value and the polarity of η can be selected on demand by the modulation of an external magnetic flux or by a gate voltage, thereby guaranteeing high versatility and improved switching speed. Furthermore, our SD operates in a wide range of temperatures up to about 70% of the superconducting critical temperature of the titanium film composing the interferometer. Our SD effect can find extended applications in SCE by operating in synergy with widespread superconducting technologies such as nanocryotrons, rapid single flux quanta, and memories. [ABSTRACT FROM AUTHOR]

Recently, the possibility to tune the critical current of conventional metallic superconductors via electrostatic gating was shown in wires, Josephson weak-links, and superconductor-normal metal–superconductor junctions. Here, we exploit such a technique to demonstrate a gate-controlled vanadium-based Dayem nano-bridge operated as a half-wave rectifier at 3 K. Our devices exploit the gate-driven modulation of the critical current of the Josephson junction and the resulting steep variation of its normal-state resistance, to convert an AC signal applied to the gate electrode into a DC one across the junction. All-metallic superconducting gated rectifiers could provide the enabling technology to realize tunable photon detectors and diodes useful for superconducting electronics circuitry. [ABSTRACT FROM AUTHOR]

We report on the realization of Nb-based all-metallic Dayem nano-bridge gate-controlled transistors (Nb-GCTs). These Josephson devices operate up to a temperature of ∼ 3 K and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors and leads us to foresee the implementation of a superconducting digital logic based on the Nb-GCT. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable half-wave rectifier to be used for either superconducting electronics or photon detection applications. [ABSTRACT FROM AUTHOR]

Heterostructured InAs/InSb nanowire (Nw) based field effect transistors (FET) have been fabricated and tested as Terahetz radiation detectors. While responsivity and noise equivalent power compare with the ones of InAs nanowire detectors, the presence of small-gap InSb semiconductor gives rise to interesting physical effects such an increase of the detected signal with charge injection through the wire, at odds with standard FET-detectors. Additionally, the photodetected signal voltage changes its sign after a threshold gate bias, which we explain considering surface-related transport and field asymmetries imposed by the use of a lateral gate electrode. [ABSTRACT FROM AUTHOR]

We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions. [ABSTRACT FROM AUTHOR]

Glioblastoma multiforme (GBM) is the most aggressive brain cancer, characterized by a rapid and drug-resistant progression. GBM "builds" around its primary core a genetically heterogeneous tumor-microenvironment (TME), recruiting surrounding healthy brain cells by releasing various intercellular signals. Glioma-associated microglia (GAM) represent the largest population of collaborating cells, which, in the TME, usually exhibit the anti-inflammatory M2 phenotype, thus promoting an immunosuppressing environment that helps tumor growth. Conversely, "classically activated" M1 microglia could provide proinflammatory and antitumorigenic activity, expected to exert a beneficial effect in defeating glioblastoma. In this work, an immunotherapy approach based on proinflammatory modulation of the GAM phenotype is proposed, through a controlled and localized electrical stimulation. The developed strategy relies on the wireless ultrasonic excitation of polymeric piezoelectric nanoparticles coated with GBM cell membrane extracts, to exploit homotypic targeting in antiglioma applications. Such camouflaged nanotransducers locally generate electrical cues on GAM membranes, activating their M1 phenotype and ultimately triggering a promising anticancer activity. Collected findings open new perspectives in the modulation of immune cell activities through "smart" nanomaterials and, more specifically, provide an innovative auspicious tool in glioma immunotherapy., (© 2024 Wiley‐VCH GmbH.)

In the past decades, bone tissue engineering developed and exploited many typologies of bioreactors, which, besides providing proper culture conditions, aimed at integrating those bio-physical stimulations that cells experience in vivo, to promote osteogenic differentiation. Nevertheless, the highly challenging combination and deployment of many stimulation systems into a single bioreactor led to the generation of several unimodal bioreactors, investigating one or at mostly two of the required biophysical stimuli. These systems miss the physiological mimicry of bone cells environment, and often produced contrasting results, thus making the knowledge of bone mechanotransduction fragmented and often inconsistent. To overcome this issue, in this study we developed a perfusion and electroactive-vibrational reconfigurable stimulation bioreactor to investigate the differentiation of SaOS-2 bone-derived cells, hosting a piezoelectric nanocomposite membrane as cell culture substrate. This multimodal perfusion bioreactor is designed based on a numerical (finite element) model aimed at assessing the possibility to induce membrane nano-scaled vibrations (with ~12 nm amplitude at a frequency of 939 kHz) during perfusion (featuring 1.46 dyn cm -2 wall shear stress), large enough for inducing a physiologically-relevant electric output (in the order of 10 mV on average) on the membrane surface. This study explored the effects of different stimuli individually, enabling to switch on one stimulation at a time, and then to combine them to induce a faster bone matrix deposition rate. Biological results demonstrate that the multimodal configuration is the most effective in inducing SaOS-2 cell differentiation, leading to 20-fold higher collagen deposition compared to static cultures, and to 1.6- and 1.2-fold higher deposition than the perfused- or vibrated-only cultures. These promising results can provide tissue engineering scientists with a comprehensive and biomimetic stimulation platform for a better understanding of mechanotransduction phenomena beyond cells differentiation., (© 2022 The Authors. Biotechnology and Bioengineering published by Wiley Periodicals LLC.)

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: an unconventional electric field-effect or quasiparticle injection. Here, we provide conclusive evidence for the electrostatic-field-driven control of the supercurrent in metallic nanosized superconductors, by realizing ionic-gated superconducting field-effect nanotransistors (ISFETs) where electron injection is impossible. Our Nb ISFETs show giant suppression of the superconducting critical current of up to ∼45%. Moreover, the bipolar supercurrent suppression observed in different ISFETs, together with invariant critical temperature and normal-state resistance, also excludes conventional charge accumulation/depletion. Therefore, the microscopic explanation of this effect calls upon a novel theory able to describe the nontrivial interaction of static electric fields with conventional superconductivity.

We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximity Cu mesoscopic weak links. This specific kind of metallic weak links behaves analogously to genuine superconducting metals in terms of the response to electrostatic gating and provides a good performance in terms of current-modulation visibility. We show that through the application of a static gate voltage we can modify the interferometer current-flux relation in a fashion that seems compatible with the introduction of π-channels within the gated weak link. Our results suggest that the microscopic mechanism at the origin of the suppression of the switching current in the interferometer is apparently phase coherent, resulting in an overall damping of the superconducting phase rigidity. We finally tackle the performance of the interferometer in terms of responsivity to magnetic flux variations in the dissipative regime and discuss the practical relevance of gated proximity-based all-metallic SQUIDs for magnetometry at the nanoscale., Competing Interests: The authors declare no competing financial interest., (© 2021 American Chemical Society.)

The possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals was recently demonstrated. Despite the extensive experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such an unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results, which provide information regarding a possible thermal origin of the effect: first, we review experiments performed on high-critical-temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools, such as a half-wave rectifier. Second, we discuss the origin of the gating effect by showing gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate employing finite element simulations and compare the results with experimental data. In our view, the presented data provide a strong indication regarding the unlikelihood of the thermal origin of the gating effect.

Under standard conditions, the electrostatic field-effect is negligible in conventional metals and was expected to be completely ineffective also in superconducting metals. This common belief was recently put under question by a family of experiments that displayed full gate-voltage-induced suppression of critical current in superconducting all-metallic gated nanotransistors. To date, the microscopic origin of this phenomenon is under debate, and trivial explanations based on heating effects given by the negligible electron leakage from the gates should be excluded. Here, we demonstrate the control of the supercurrent in fully suspended superconducting nanobridges. Our advanced nanofabrication methods allow us to build suspended superconducting Ti-based supercurrent transistors which show ambipolar and monotonic full suppression of the critical current for gate voltages of V G C ≃ 18 V and for temperatures up to ∼80% of the critical temperature. The suspended device architecture minimizes the electron-phonon interaction between the superconducting nanobridge and the substrate, and therefore, it rules out any possible contribution stemming from charge injection into the insulating substrate. Besides, our finite element method simulations of vacuum electron tunneling from the gate to the bridge and thermal considerations rule out the cold-electron field emission as a possible driving mechanism for the observed phenomenology. Our findings promise a better understanding of the field effect in superconducting metals.

Gate-tunable Josephson junctions (JJs) are the backbone of superconducting classical and quantum computation. Typically, these systems exploit low-charge-concentration materials and present technological difficulties limiting their scalability. Surprisingly, electric field modulation of a supercurrent in metallic wires and JJs has been recently demonstrated. Here, we report the realization of titanium-based monolithic interferometers which allow tuning both JJs independently via voltage bias applied to capacitively coupled electrodes. Our experiments demonstrate full control of the amplitude of the switching current ( I s ) and of the superconducting phase across the single JJ in a wide range of temperatures. Astoundingly, by gate-biasing a single junction, the maximum achievable total I s is suppressed down to values much lower than the critical current of a single JJ. A theoretical model including gate-induced phase fluctuations on a single junction accounts for our experimental findings. This class of quantum interferometers could represent a breakthrough for several applications such as digital electronics, quantum computing, sensitive magnetometry, and single-photon detection.

We demonstrate proximity-based all-metallic mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature T c down to 50 mK in the presence of both electric and magnetic fields. The ability of a static electric field-applied by means of a lateral gate electrode-to suppress the critical current I s in a proximity-induced superconductor is proven for both positive and negative gate voltage values. I s reached typically about one-third of its initial value, saturating at high gate voltages. The transconductance of our SNS-FETs obtains values as high as 100 nA/V at 100 mK. On the fundamental physics side, our results suggest that the mechanism at the basis of the observed phenomenon is quite general and does not rely on the existence of a true pairing potential, but rather the presence of superconducting correlations is enough for the effect to occur. On the technological side, our findings widen the family of materials available for the implementation of all-metallic field-effect transistors to synthetic proximity-induced superconductors.

A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretically predicted that the combination of two such spin-split superconductors with independently tunable magnetizations may be used as an ideal absolute spin-valve. Here, we report on the first switchable superconducting spin-valve based on two EuS/Al bilayers coupled through an aluminum oxide tunnel barrier. The spin-valve shows a relative resistance change between the parallel and antiparallel configuration of the EuS layers up to 900% that demonstrates a highly spin-polarized current through the junction. Our device may be pivotal for realization of thermoelectric radiation detectors, a logical element for a memory cell in cryogenics, superconductor-based computers, and superconducting spintronics in general.

Piezoelectric films of poly(vinylidenedifluoride-trifluoroethylene) (P(VDF-TrFE)) and of P(VDF-TrFE)/boron nitride nanotubes (BNNTs) were prepared by cast-annealing and used for SaOS-2 osteoblast-like cell culture. Films were characterized in terms of surface and bulk features, and composite films demonstrated enhanced piezoresponse compared to plain polymeric films (d 31 increased by ~80%). Osteogenic differentiation was evaluated in terms of calcium deposition, collagen I secretion, and transcriptional levels of marker genes (Alpl, Col1a1, Ibsp, and Sparc) in cells either exposed or not to ultrasounds (US); finally, a numerical model suggested that the induced voltage (~20-60 mV) is suitable for cell stimulation. Although preliminary, our results are extremely promising and encourage the use of piezoelectric P(VDF-TrFE)/BNNT films in bone tissue regeneration., (Copyright © 2017 Elsevier Inc. All rights reserved.)

In their original formulation of superconductivity, the London brothers predicted 1 the exponential suppression of an electrostatic field inside a superconductor over the so-called London penetration depth 2-4 , λ L . Despite a few experiments indicating hints of perturbation induced by electrostatic fields 5-7 , no clue has been provided so far on the possibility to manipulate metallic superconductors via the field effect. Here, we report field-effect control of the supercurrent in all-metallic transistors made of different Bardeen-Cooper-Schrieffer superconducting thin films. At low temperature, our field-effect transistors show a monotonic decay of the critical current under increasing electrostatic field up to total quenching for gate voltage values as large as ±40 V in titanium-based devices. This bipolar field effect persists up to ~85% of the critical temperature (~0.41 K), and in the presence of sizable magnetic fields. A similar behaviour is observed in aluminium thin-film field-effect transistors. A phenomenological theory accounts for our observations, and points towards the interpretation in terms of an electric-field-induced perturbation propagating inside the superconducting film. In our understanding, this affects the pairing potential and quenches the supercurrent. These results could represent a groundbreaking asset for the realization of all-metallic superconducting field-effect electronics and leading-edge quantum information architectures 8,9 .

Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric-field-induced control of charge-carrier concentration to modulate the channel superconducting properties. Despite the fact that the field-effect is believed to be ineffective for superconducting metals, recent experiments showed electric-field-dependent modulation of the critical current ( I C ) in a fully metallic transistor. However, the grounding mechanism of this phenomenon is not completely understood. Here, we show the experimental realization of Ti-based Dayem bridge field-effect transistors (DB-FETs) able to control the I C of the superconducting channel. Our easy fabrication process for DB-FETs show symmetric full suppression of I C for applied critical gate voltages as low as V G C ≃ ±8 V at temperatures reaching about the 85% of the record critical temperature, T C ≃ 550 mK, for titanium. The gate-independent T C and normal-state resistance ( R N ) coupled with the increase of resistance in the superconducting state ( R S ) suggest the creation of field-effect induced metallic puddles in the superconducting sea. Our devices show extremely high values of transconductance (| g G C ) suggest the creation of field-effect induced metallic puddles in the superconducting sea. Our devices show extremely high values of transconductance (| g m MAX | ≃ 15 μA/V at V G ≃ ±6.5 V) and variations of Josephson kinetic inductance ( L K ) with V G of 2 orders of magnitude. Therefore, the DB-FET appears as an ideal candidate for the realization of superconducting electronics, superconducting qubits, and tunable interferometers as well as photon detectors.

A scalable surface-acoustic-wave- (SAW-) based cantilevered device for portable bio-chemical sensing applications is presented. Even in the current, proof-of-principle implementation this architecture is shown to outperform commercial quartz-crystal microbalances in terms of sensitivity. Adhesion of analytes on a functionalized surface of the cantilever shifts the resonant frequency of a SAW-generating transducer due to the stress-induced variation of the speed of surface acoustic modes. We discuss the relevance of this approach for diagnostics applications based on miniaturized devices., (Copyright © 2015 Elsevier B.V. All rights reserved.)

By exploiting the resonant coupling between a travelling wave and the stationary modes of a cavity, we present the first scheme for integrated automatic interaction-free surface acoustic wave routing of fluids. Our scheme opens the way to the implementation of logic gates based on instantaneous liquid distribution.

Anti-inflammatory properties of pentoxifylline (PTX) have recently been described. Spontaneously hypertensive stroke-prone rats (SHRSP) constitute an animal model that develops an inflammatory condition that precedes the appearance of brain abnormalities. The aim of the present investigation was to assess: 1) the efficacy of PTX treatment in protecting the neural system in SHRSP, and 2) how its anti-inflammatory properties might be involved in this effect. Male SHRSP fed with a permissive diet received no drug or PTX (100 or 200 mg/kg/day). Brain abnormalities detected by magnetic resonance imaging developed spontaneously in control rats after 42 +/- 3 days, whereas in rats treated with 100 mg/kg/day PTX, abnormalities developed in only 80% of the animals and only after 70 to 80 days. Treatment with a higher dose of PTX (200 mg/kg/day) completely protected the brain from abnormal development. The drug treatment prevented the accumulation of macrophages or CD4+ positive cells, the activation of glia in brain tissues, and the appearance of inflammatory proteins and thiobarbituric acid-reactive substances in body fluids. PTX treatment did induce a greater increase of serum tumor necrosis factor-alpha (TNF-alpha), but not of interleukin (IL)-1beta and IL-6 induced by in vivo administration of lipopolysaccharide (LPS), which suggests a protective role for TNF-alpha. PTX also exerted protective effects when it was administered after the first occurrence of proteinuria (>40 mg/day). These data indicate that PTX treatment dose-dependently prevents the occurrence of spontaneous brain damage by reducing inflammatory events. We also hypothesize that the increase of TNF-alpha by PTX treatment represents a protective mechanism in SHRSP.

Differential pulse voltammetry was used together with treated carbon fiber microelectrodes to study the in vivo catecholamine (CA) metabolism in the locus coeruleus (LC), a brain region densely packed with noradrenergic neurons. In chronically implanted rats, an in vivo oxidation current that peaks at +0.1 V has been detected inside the LC complex. This current whose potential is characteristic of the oxidation of the catechols, had the same anatomical localization as the noradrenergic cells. Pharmacological experiments have been made to ascertain which catechols contribute to this in vivo current. Monoamine oxidase inhibition by pargyline was followed by a total and rapid suppression of the in vivo signal. Blockade of dopamine-beta-hydroxylase by FLA-63 induced a significant increase in the electrochemical signal. Post-mortem analysis of LC catechol levels after administration of this drug revealed a considerable decrease in NA and its major catechol metabolite, 3,4-dihydroxyphenylglycol (DOPEG) although DA and its metabolite 3,4-dihydroxyphenylacetic acid (DOPAC) were significantly increased. Comparison of these results led us to conclude that DOPAC is probably the most important contributor to the in vivo oxidation current. This assertion is corroborated by results obtained after tyrosine hydroxylase inhibition with alpha-methyl-p-tyrosine: the in vivo catechol current was rapidly suppressed and post-mortem levels of DOPAC were significantly reduced while DOPEG remained almost normal. An attempt was made to selectively destroy the LC cell bodies by a unilateral injection of ibotenic acid (10 micrograms). Eight to 15 days after injection, no current was detectable in the injected side although it was still present in the contralateral intact side. Post-mortem levels of DOPAC and DOPEG levels of the lesioned side were 29% and 17%, respectively, of those in the intact side. Thus, we assumed that the in vivo catechol current in the LC comes from the oxidation of DOPAC most probably synthesized by the noradrenergic cell bodies.

Differential pulse voltammetry used in combination with electrochemically treated carbon fiber electrodes allowed us to detect catechols in the locus coeruleus (LC) of conscious freely moving rats. A micromanipulator cemented on the rat skull was designed in order to implant carbon fiber electrodes without anesthesia. Voltammograms were recorded every 2 min for 5 h. After the in vivo experiments electrodes were tested in 3,4-dihydroxyphenylacetic acid (DOPAC), 3,4-dihydroxyphenylglycol (DOPEG) and noradrenaline (NA) solutions. The catechol peak recorded from LC was suppressed by pargyline treatment and slightly reappeared after inhibition of the NA reuptake by desipramine (DMI). This reappearing signal was attributed to NA and estimated at a concentration 50 nM NA. Various drug treatments (piperoxane, haloperidol, clonidine, DMI and reserpine) allowed us to further support the conclusion of part I of this study: the catechol peak recorded from LC is mainly due to DOPAC synthesized by LC noradrenergic neurons. This DOPAC signal corresponded to a DOPAC concentration which reached 23 microM when the whole active part of the electrode was implanted in the LC. In addition to this pharmacological study, data from stress experiments pointed out a striking parallel between the variations of the DOPAC signal and those of the activity of LC noradrenergic neurons as revealed by reported electrophysiological studies.