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In view of the defects of existing longitudinal tearing monitoring system of conveyor belt, such as few monitoring points, poor expansibility, and still need to be on duty, a remote monitoring system for longitudinal tearing of conveyor belt suitable for multi -point monitoring based on cloud technology was designed. The system consists of a word line laser, embedded processing terminal, area array CMOS camera, cloud server, PC monitoring software and mobile phone monitoring software.The embedded processing terminal drives area array CMOS camera to collect laser fringe projected by the laser onto lower surface of the conveyor belt, and analyzes each frame of collected image, extracts the laser fringe skeleton, and calculates the distortion value.When the distortion value is greater than the preset threshold value, it indicates that the conveyor belt has longitudinal tear and the embedded processing terminal drives the alarm with voice alarm.When the distortion value is less than the threshold value, it indicates that the conveyor belt works normally.The embedded processing terminal transfers image to PC via file transfer protocol and saves it locally.PC monitoring software uses secure file transfer protocol to send the received image information to the cloud server. Mobile phone monitoring software uses the Web server provided by Tomcat to access the cloud server and obtain the image information in real time.The experimental results show that the system can realize a full range of remote real -time monitoring of longitudinal tearing of conveyor belts on site, PC terminal and mobile terminal, and can monitor the running condition of the conveyor belt at any monitoring point in anytime and at anywhere.

Short-wave infrared (SWIR) imaging has a wide range of applications in civil and military fields. Over the past two decades, significant efforts have been devoted to developing high-resolution, high-sensitivity, and cost-effective SWIR sensors covering the spectral range from 0.9 μm to 3 μm. These advancements stimulate new prospects across a wide array of fields including life sciences, medical diagnostics, defense, surveillance, security, free-space optics (FSO), thermography, agriculture, food inspection, and LiDAR applications. In this review, we begin by introducing monolithic SWIR image sensors and hybrid SWIR image sensors and indicate that flip-chip bump bonding technology remains the predominant integration method for hybrid SWIR image sensors owing to its outstanding performance, adaptable integration with innovative epitaxial SWIR materials, long-term stability, and long-term reliability. Subsequently, we comprehensively summarize recent advancements in epitaxial thin-film SWIR sensors, encompassing FPAs and flip-chip bump bonding technology for epitaxial InGaAs and Ge (Sn) thin-film SWIR sensors. Finally, a summary and outlook regarding the development of InGaAs and Ge (Sn) SWIR sensors are provided and discussed. The ongoing evolution of epitaxial thin-film SWIR sensors with flip-chip bump bonding technology is poised to foster new applications in both academic and industry fields. [ABSTRACT FROM AUTHOR]

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology. [ABSTRACT FROM AUTHOR]

In insects, melanism plays important roles in defense, immunoreactions, and body color. The underlying molecular mechanisms of melanism in different insects are diverse and remain elusive. In contrast to another silkworm, Bombyx mori , the Chinese oak silkworm, Antheraea pernyi , produces melanic pupae under natural environmental conditions. DOPA and dopamine synthesis are crucial for melanin formation. Disruption of these processes reportedly influences body colors in many insects. Most research focuses on newly emerged pupae, and the larval process preceding pupation remains unknown. Due to the large size and long pupation period in A. pernyi , the entire process was studied at least every 12 h. The expression patterns of tyrosine hydroxylase (TH) and DOPA decarboxylase (DDC), which are involved in DOPA and dopamine synthesis in the epidermis, were evaluated during larval–pupal metamorphosis. We also performed RNA interference (RNAi) and used enzyme inhibitors to examine morphological changes. The amino acid sequences of TH and DDC share 90.91% and 86.64% identity with those of B. mori. TH and DDC expression was upregulated during the 48–72 h period prior to pupal emergence, especially at 60 h. RNAi of TH and DDC induced partial melanism in some pupae. The inhibitors 3-iodo-tyrosine (3-IT) and L-α-methyl-DOPA (L-DOPA) influenced pupal melanization. Different concentrations of inhibitors led to pupal deformity and even mortality. Four different monoamines, only DOPA and Dopamine synthezed from Tyrosine will be influenced by TH and DDC inhibitor. These results indicate that TH and DDC are key genes associated with pupal melanization during larval–pupal transformation in A. pernyi. Overall, our results suggest that TH and DDC expression alterations in a particular stage can affect body color, setting the molecular basis for artificial control of pupal melanization. [ABSTRACT FROM AUTHOR]

Background: The aim of the study was to explore a feasible method for alleviating limb ischemia-reperfusion injury (LI/RI) through the use of a high-concentration citrate solution (HC-A solution) for limb perfusion (LP)., Methods: Eighteen pigs were divided into three groups: the Sham group, LI/RI group, and HCA group. The Sham group underwent exposure of the iliac artery and vein. The LI/RI group underwent tourniquet placement and clamping of the iliac artery and vein to simulate LI/RI. The HCA group received HC-A solution LP for 30 min through the left iliac artery below the level of blood flow occlusion based on the LI/RI group. Oxidative stress markers and inflammatory response markers were compared among the three groups., Results: Compared to the LI/RI group, the HCA group showed significantly lower levels of serum creatine kinase (CK), lactate dehydrogenase (LDH), malondialdehyde (MDA), tumor necrosis factor-α (TNF-α), aspartate aminotransferase (AST), and alanine aminotransferase (ALT), and significantly greater activities of serum superoxide dismutase (SOD) (p < 0.05). There were no significant differences in serum interleukin-6 (IL-6) or in muscle MDA, SOD, TNF-α, and IL-6 between the HCA group and the LI/RI group (p > 0.05). Compared to the LI/RI group, MDA, TNF-α, and IL-6 levels in the liver were significantly lower in the HCA group (p < 0.05), while SOD activities were not significantly different (p > 0.05). Histopathological examination revealed reduced skeletal muscle and liver damage in the HCA group compared to the LI/RI group., Conclusions: HC-A solution LP can alleviate liver damage caused by LI/RI in pigs., (© 2025 The Author(s). Animal Models and Experimental Medicine published by John Wiley & Sons Australia, Ltd on behalf of The Chinese Association for Laboratory Animal Sciences.)

This work demonstrates a high-performance photodetector with a 4-cycle Ge 0.86 Si 0.14 /Ge multi-quantum well (MQW) structure grown by reduced pressure chemical vapor deposition techniques on a Ge-buffered Si (100) substrate. At -1 V bias, the dark current density of the fabricated PIN mesa devices is as low as 3 mA/cm 2 , and the optical responsivities are 0.51 and 0.17 A/W at 1310 and 1550 nm, respectively, corresponding to the cutoff wavelength of 1620 nm. At the same time, the device has good high-power performance and continuous repeatable light response. On the other hand, the temperature coefficient of resistance (TCR) of the device is as high as -5.18%/K, surpassing all commercial thermal detectors. These results indicate that the CMOS-compatible and low-cost Ge 0.86 Si 0.14 /Ge multilayer structure is promising for short-wave infrared and uncooled infrared imaging.