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Your search keyword '"Chen, X.S."' showing total 165 results
Start Over Author "Chen, X.S." Publication Type Academic Journals
165 results on '"Chen, X.S."'

12. The detector system of the Daya Bay reactor neutrino experiment

Author

An, F.P., Bai, J.Z., Balantekin, A.B., Band, H.R., Beavis, D., Beriguete, W., Bishai, M., Blyth, S., Brown, R.L., Butorov, I., Cao, D., Cao, G.F., Cao, J., Carr, R., Cen, W.R., Chan, W.T., Chan, Y.L., Chang, J.F., Chang, L.C., Chang, Y., Chasman, C., Chen, H.Y., Chen, H.S., Chen, M.J., Chen, Q.Y., Chen, S.J., Chen, S.M., Chen, X.C., Chen, X.H., Chen, X.S., Chen, Y.X., Chen, Y., Cheng, J.H., Cheng, J., Cheng, Y.P., Cherwinka, J.J., Chidzik, S., Chow, K., Chu, M.C., Cummings, J.P., de Arcos, J., Deng, Z.Y., Ding, X.F., Ding, Y.Y., Diwan, M.V., Dong, L., Dove, J., Draeger, E., Du, X.F., Dwyer, D.A., Edwards, W.R., Ely, S.R., Fang, S.D., Fu, J.Y., Fu, Z.W., Ge, L.Q., Ghazikhanian, V., Gill, R., Goett, J., Gonchar, M., Gong, G.H., Gong, H., Gornushkin, Y.A., Grassi, M., Greenler, L.S., Gu, W.Q., Guan, M.Y., Guo, R.P., Guo, X.H., Hackenburg, R.W., Hahn, R.L., Han, R., Hans, S., He, M., He, Q., He, W.S., Heeger, K.M., Heng, Y.K., Higuera, A., Hinrichs, P., Ho, T.H., Hoff, M., Hor, Y.K., Hsiung, Y.B., Hu, B.Z., Hu, L.M., Hu, L.J., Hu, T., Hu, W., Huang, E.C., Huang, H.Z., Huang, H.X., Huang, P.W., Huang, X., Huang, X.T., Huber, P., Hussain, G., Isvan, Z., Jaffe, D.E., Jaffke, P., Jen, K.L., Jetter, S., Ji, X.P., Ji, X.L., Jiang, H.J., Jiang, W.Q., Jiao, J.B., Johnson, R.A., Joseph, J., Kang, L., Kettell, S.H., Kohn, S., Kramer, M., Kwan, K.K., Kwok, M.W., Kwok, T., Lai, C.Y., Lai, W.C., Lai, W.H., Langford, T.J., Lau, K., Lebanowski, L., Lee, J., Lee, M.K.P., Lei, R.T., Leitner, R., Leung, J.K.C., Lewis, C.A., Li, B., Li, C., Li, D.J., Li, F., Li, G.S., Li, J., Li, N.Y., Li, Q.J., Li, S.F., Li, S.C., Li, W.D., Li, X.B., Li, X.N., Li, X.Q., Li, Y., Li, Y.F., Li, Z.B., Liang, H., Liang, J., Lin, C.J., Lin, G.L., Lin, P.Y., Lin, S.X., Lin, S.K., Lin, Y.C., Ling, J.J., Link, J.M., Littenberg, L., Littlejohn, B.R., Liu, B.J., Liu, C., Liu, D.W., Liu, H., Liu, J.L., Liu, J.C., Liu, S., Liu, S.S., Liu, X., Liu, Y.B., Lu, C., Lu, H.Q., Lu, J.S., Luk, A., Luk, K.B., Luo, T., Luo, X.L., Ma, L.H., Ma, Q.M., Ma, X.Y., Ma, X.B., Ma, Y.Q., Mayes, B., McDonald, K.T., McFarlane, M.C., McKeown, R.D., Meng, Y., Mitchell, I., Mohapatra, D., Monari Kebwaro, J., Morgan, J.E., Nakajima, Y., Napolitano, J., Naumov, D., Naumova, E., Newsom, C., Ngai, H.Y., Ngai, W.K., Nie, Y.B., Ning, Z., Ochoa-Ricoux, J.P., Olshevskiy, A., Pagac, A., Pan, H.-R., Patton, S., Pearson, C., Pec, V., Peng, J.C., Piilonen, L.E., Pinsky, L., Pun, C.S.J., Qi, F.Z., Qi, M., Qian, X., Raper, N., Ren, B., Ren, J., Rosero, R., Roskovec, B., Ruan, X.C., Sands, W.R., III, Seilhan, B., Shao, B.B., Shih, K., Song, W.Y., Steiner, H., Stoler, P., Stuart, M., Sun, G.X., Sun, J.L., Tagg, N., Tam, Y.H., Tanaka, H.K., Tang, W., Tang, X., Taychenachev, D., Themann, H., Torun, Y., Trentalange, S., Tsai, O., Tsang, K.V., Tsang, R.H.M., Tull, C.E., Tung, Y.C., Viaux, N., Viren, B., Virostek, S., Vorobel, V., Wang, C.H., Wang, L.S., Wang, L.Y., Wang, L.Z., Wang, M., Wang, N.Y., Wang, R.G., Wang, T., Wang, W., Wang, W.W., Wang, X.T., Wang, X., Wang, Y.F., Wang, Z., Wang, Z.M., Webber, D.M., Wei, H.Y., Wei, Y.D., Wen, L.J., Wenman, D.L., Whisnant, K., White, C.G., Whitehead, L., Whitten, C.A., Jr., Wilhelmi, J., Wise, T., Wong, H.C., Wong, H.L.H., Wong, J., Wong, S.C.F., Worcester, E., Wu, F.F., Wu, Q., Xia, D.M., Xia, J.K., Xiang, S.T., Xiao, Q., Xing, Z.Z., Xu, G., Xu, J.Y., Xu, J.L., Xu, J., Xu, W., Xu, Y., Xue, T., Yan, J., Yang, C.G., Yang, L., Yang, M.S., Yang, M.T., Ye, M., Yeh, M., Yeh, Y.S., Yip, K., Young, B.L., Yu, G.Y., Yu, Z.Y., Zeng, S., Zhan, L., Zhang, C., Zhang, F.H., Zhang, H.H., Zhang, J.W., Zhang, K., Zhang, Q.X., Zhang, Q.M., Zhang, S.H., Zhang, X.T., Zhang, Y.C., Zhang, Y.H., Zhang, Y.M., Zhang, Y.X., Zhang, Z.J., Zhang, Z.Y., Zhang, Z.P., Zhao, J., Zhao, Q.W., Zhao, Y.F., Zhao, Y.B., Zheng, L., Zhong, W.L., Zhou, L., Zhou, N., Zhou, Z.Y., Zhuang, H.L., Zimmerman, S., and Zou, J.H.

Published
2016
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28. Electric field enhanced hydrogen storage on polarizable materials substrates

Author

Zhou, J., Wang, Q., Sun, Q., Jena, P., and Chen, X.S.

Subjects
Polarization (Electricity) -- Research, Science and technology
Abstract

Using density functional theory, we show that an applied electric field can substantially improve the hydrogen storage properties of polarizable substrates. This new concept is demonstrated by adsorbing a layer of hydrogen molecules on a number of nanomaterials. When one layer of [H.sub.2] molecules is adsorbed on a BN sheet, the binding energy per [H.sub.2] molecule increases from 0.03 eV/[H.sub.2] in the field-free case to 0.14 eV/[H.sub.2] in the presence of an electric field of 0.045 a.u. The corresponding gravimetric density of 7.5 wt% is consistent with the 6 wt% system target set by Department of Energy for 2010. The strength of the electric field can be reduced if the substrate is more polarizable. For example, a hydrogen adsorption energy of 0.14 eV/[H.sub.2] can be achieved by applying an electric field of 0.03 a.u. on an AIN substrate, 0.006 a.u. on a silsesquioxane molecule, and 0.007 a.u. on a silsesquioxane sheet. Thus, application of an electric field to a polarizable substrate provides a novel way to store hydrogen; once the applied electric field is removed, the stored Hz molecules can be easily released, thus making storage reversible with fast kinetics. In addition, we show that materials with rich low-coordinated nonmetal anions are highly polarizable and can serve as a guide in the design of new hydrogen storage materials. energetics [ kinetics | nanomaterials | polarization | reversibility www.pnas.org/cgi/doi/10.1073/pnas.0905571107

Published
2010

40. Measurement and signal reconstruction of transient nitric oxide emissions in the exhaust of a turbocharged diesel engine

Author

Chan, S.H. and Chen, X.S.

Subjects
Transients (Dynamics) -- Analysis, Nitric oxide -- Measurement, Exhaust systems -- Analysis, Diesel motor -- Turbochargers, Combustion chambers -- Usage, Engineering and manufacturing industries, Science and technology
Abstract

A well-developed technique, based upon a combined experimental and phenomenological modeling approach, has been adopted for the measurement of nitric oxide (NO) emissions in a diesel engine exhaust under transient engine operation. The dynamic behavior of the chemiluminescent analyzer used for the measurement of NO emissions is characterized by a single gas diffusion model followed by three perfect gas-mixing models. The response of the analyzer is obtained using a computer-controlled transient NO emission simulator, which randomly generates a square-pulse train of NO gas and concurrently measures its signal output. Signal prediction and reconstruction analysis were performed, which has demonstrated the predictive and reconstructive capabilities of the phenomenological analyzer model. On-line nitric oxide emission measurements were obtained in a computer-controlled dynamic engine test bed having three different control modes and fuel injection timing settings. The results have shown that the transient nitric oxide concentration is very sensitive to the engine operating condition prior to the transients as well to the amount of fuel injected into the combustion chamber at the start of the transient operation.

Published
1997

50. Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled double quantum wells

Author

Cen, L.B., Shen, B., Huang, C.C., Xu, F.J., Qin, Z.X., Zhang, G.Y., Chen, X.S., and Lu, W.

Subjects
Aluminum nitride -- Electric properties, Aluminum nitride -- Optical properties, Gallium compounds -- Electric properties, Gallium compounds -- Optical properties, Poisson distribution -- Usage, Polarization (Electricity) -- Analysis, Quantum wells -- Analysis, Physics
Abstract

The impact of polarization-induced electric fields on the coherent electron tunneling probability in AlN/GaN coupled double quantum wells (CDQWs) is examined by solving Schrodinger and Poisson equations. The coherent electron tunneling probability has decreased with the increased in the polarization-induced electric fields, which is attributed to the resonance between the [E.sub.2] and [E.sub.3] subbands weakening with the polarization-induced electric fields increasing in AlN/GaN CDQWs.

Published
2010

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