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A study was conducted to analyze longitudinal spin-density-wave ordering in thin epitaxial chromium layers. nuclear method based on the hyperfine interaction was utilized to characterize the magnetism in the samples. Experimental results indicated that the spin-flip transition in chromium as an anisotropy influences rather than an intrinsic characteristics of the spin-density-wave ordering.

We present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms and that, in contrast to several implanted metal impurities in Ge, no significant fraction of As is found on interstitial sites. The substitutional As impurities are found to be thermally stable up to 600 °C. After 700 °C annealing a strong reduction of emission channeling effects was observed, in full accordance with the expected diffusion-induced broadening of the As profile. [ABSTRACT FROM AUTHOR]

Fluorite CeO2 doped with group IV elements is studied within the density functional theory ( DFT) and DFT + U framework. Concentration-dependent formation energies are calculated for Ce1− x Z x O2 (Z = C, Si, Ge, Sn, Pb, Ti, Zr, Hf) with 0 ≤ x ≤ 0.25 and a roughly decreasing trend with ionic radius is observed. The influence of the valence and near valence electronic configuration is discussed, indicating the importance of filled d and f shells near the Fermi level for all properties investigated. A clearly different behavior of group IVa and IVb dopants is observed: the former are more suitable for surface modifications and the latter are more suitable for bulk modifications. For the entire set of group IV dopants, there exists an inverse relation between the change, due to doping, of the bulk modulus, and the thermal expansion coefficients. Hirshfeld-I atomic charges show that charge-transfer effects due to doping are limited to the nearest-neighbor oxygen atoms. [ABSTRACT FROM AUTHOR]

Predictions of observable properties by density-functional theory calculations (DFT) are used increasingly often by experimental condensed-matter physicists and materials engineers as data. These predictions are used to analyze recent measurements, or to plan future experiments in a rational way. Increasingly more experimental scientists in these fields therefore face the natural question: what is the expected error for such a first-principles prediction? Information and experience about this question is implicitly available in the computational community, scattered over two decades of literature. The present review aims to summarize and quantify this implicit knowledge. This eventually leads to a practical protocol that allows any scientist—experimental or theoretical—to determine justifiable error estimates for many basic property predictions, without having to perform additional DFT calculations. A central role is played by a large and diverse test set of crystalline solids, containing all ground-state elemental crystals (except most lanthanides). For several properties of each crystal, the difference between DFT results and experimental values is assessed. We discuss trends in these deviations and review explanations suggested in the literature. A prerequisite for such an error analysis is that different implementations of the same first-principles formalism provide the same predictions. Therefore, the reproducibility of predictions across several mainstream methods and codes is discussed too. A quality factor Δ expresses the spread in predictions from two distinct DFT implementations by a single number. To compare the PAW method to the highly accurate APW+lo approach, a code assessment of VASP and GPAW (PAW) with respect to WIEN2k (APW+lo) yields Δ-values of 1.9 and 3.3 meV/atom, respectively. In both cases the PAW potentials recommended by the respective codes have been used. These differences are an order of magnitude smaller than the typical difference with experiment, and therefore predictions by APW+lo and PAW are for practical purposes identical. [ABSTRACT FROM AUTHOR]

We present an experimental lattice location study of Ga atoms in Ge after ion implantation at elevated temperature (250°C). Using extended x-ray absorption fine structure (EXAFS) experiments and a dedicated sample preparation method, we have studied the lattice location of Ga atoms in Ge with a concentration ranging from 0.5 at. % down to 0.005 at. %. At Ga concentrations ≤0.05 at.%, all Ga dopants are substitutional directly after ion implantation, without the need for post-implantation thermal annealing. At higher Ga concentrations, a reduction in the EXAFS amplitude is observed, indicating that a fraction of the Ga atoms is located in a defective environment. The local strain induced by the Ga atoms in the Ge matrix is independent of the Ga concentration and extends only to the first nearest neighbor Ge shell, where a 1% contraction in bond length has been measured, in agreement with density functional theory calculations. [ABSTRACT FROM AUTHOR]

We examine the electronic structure of the family of ternary zinc spinel oxides ZnX2O4 (X = Al, Ga and In). The band gap of ZnAl2O4 calculated using density functional theory (DFT) is 4.25 eV and is overestimated compared with the experimental value of 3.8-3.9 eV. The DFT band gap of ZnGa2O4 is 2.82 eV and is underestimated compared with the experimental value of 4.4-5.0 eV. Since DFT typically underestimates the band gap in the oxide system, the experimental measurements for ZnAl2O4 probably require a correction. We use two first-principles techniques capable of describing accurately the excited states of semiconductors, namely the GW approximation and the modified Becke-Johnson (MBJ) potential approximation, to calculate the band gap of ZnX2O4. The GW and MBJ band gaps are in good agreement with each other. In the case of ZnAl2O4, the predicted band gap values are >6 eV, i.e. ~2 eV larger than the only reported experimental value. We expect future experimental work to confirm our results. Our calculations of the electron effective masses and the second band gap indicate that these compounds are very good candidates to act as transparent conducting host materials. [ABSTRACT FROM AUTHOR]

The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes. [ABSTRACT FROM AUTHOR]

Epitaxially stabilized iron monosilicide films with the CsCl structure (B2-FeSi) have been investigated by conversion electron Mössbauer spectroscopy and x-ray diffraction. A detailed investigation of the elastic strain in these metastable layers is presented. Using hyperfine interaction information the tetragonal distortion of the silicide lattice could be quantified for layers as thin as 14 Å. A general tendency for strain relaxation with increasing layer thickness is observed. [ABSTRACT FROM AUTHOR]

ZnAl2O4 (gahnite) is a ceramic which is considered a possible transparent conducting oxide (TCO) due to its wide band gap and transparency for UV. Defects play an important role in controlling the conductivity of a TCO material along with the dopant, which is the main source of conductivity in an otherwise insulating oxide. A comprehensive first-principles density functional theory study for point defects in ZnA2O4 spinel is presented using the Heyd, Scuseria, and Ernzerhof hybrid functional (HSE06) to overcome the band gap problem. We have investigated the formation energies of intrinsic defects which include the Zn, Al, and O vacancy and the antisite defects: Zn at the Al site (ZnAl) and Al at the Zn site (AlZn). The antisite defect Ala, has the lowest formation energy and acts as a shallow donor, indicating possible rc-type conductivity in ZnA2O4 spinel by Al doping. [ABSTRACT FROM AUTHOR]

The crystal structure of lanthanum cerium oxide (La2Ce2O7) is investigated using ab initio density functional theory calculations. The relative stability of fluorite- and pyrochlorelike structures is studied through comparison of their formation energies. These formation energies show the pyrochlore structure to be favored over the fluorite structure, apparently contradicting the conclusions based on experimental neutron and x-ray diffraction (XRD). By calculating and comparing XRD spectra for a set of differently ordered and random structures, we show that the pyrochlore structure is consistent with diffraction experiments. For these reasons, we suggest the pyrochlore structure as the ground-state crystal structure for La2Ce2O7. [ABSTRACT FROM AUTHOR]

We examine the electronic structure of the family of ternary zinc spinel oxides ZnX2O4 (X = Al, Ga and In). The band gap of ZnAl2O4 calculated using density functional theory (DFT) is 4.25 eV and is overestimated compared with the experimental value of 3.8-3.9 eV. The DFT band gap of ZnGa2O4 is 2.82 eV and is underestimated compared with the experimental value of 4.4-5.0 eV. Since DFT typically underestimates the band gap in the oxide system, the experimental measurements for ZnAl2O4 probably require a correction. We use two first-principles techniques capable of describing accurately the excited states of semiconductors, namely the GW approximation and the modified Becke-Johnson (MBJ) potential approximation, to calculate the band gap of ZnX2O4. The GW and MBJ band gaps are in good agreement with each other. In the case of ZnAl2O4, the predicted band gap values are >6 eV, i.e. ~2 eV larger than the only reported experimental value. We expect future experimental work to confirm our results. Our calculations of the electron effective masses and the second band gap indicate that these compounds are very good candidates to act as transparent conducting host materials. [ABSTRACT FROM AUTHOR]

We report on the spectroscopic quadrupole moment measurement of the 7/2¡" isomeric state in "JgS27 [E* = 320.5(5) keV, Tt/2 = 415(3) ns], using the time dependent perturbed angular distribution tech-nique at the RIKEN RIBF facility. Our value, | Qs |= 23(3)

We report a first-principles study of lattice vibrations and thermal transport in Cs 2 SnI 6 , the vacancy-ordered double perovskite. Twofold rattlers of Cs atoms and SnI6 clusters in Cs 2 SnI 6 , being different from CsSnI 3 with only Cs atom rattlers, largely scatter heat-carrying acoustic phonons strongly coupled with low-lying optical phonons and lower phonon group velocity. Using renormalized phonon dispersions at finite temperatures, we reveal that anharmonicity and twofold rattling modes induce an ultralow thermal conductivity at room temperature.

The drive to develop maximal atom-efficient catalysts coupled to the continuous striving for more sustainable reactions has led to an ever-increasing interest in single-atom catalysis. Based on a periodic conceptual density functional theory (cDFT) approach, fundamental insights into the reactivity and adsorption of single late transition metal atoms supported on a fully hydroxylated amorphous silica surface have been acquired. In particular, this investigation revealed that the influence of van der Waals dispersion forces is especially significant for a silver (98 %) or gold (78 %) atom, whereas the oxophilicity of the Group 8-10 transition metals plays a major role in the interaction strength of these atoms on the irreducible SiO 2 support. The adsorption energies for the less-electronegative row 4 elements (Fe, Co, Ni) ranged from -1.40 to -1.92 eV, whereas for the heavier row 5 and 6 metals, with the exception of Pd, these values are between -2.20 and -2.92 eV. The deviating behavior of Pd can be attributed to a fully filled d-shell and, hence, the absence of the hybridization effects. Through a systematic analysis of cDFT descriptors determined by using three different theoretical schemes, the Fermi weighted density of states approach was identified as the most suitable for describing the reactivity of the studied systems. The main advantage of this scheme is the fact that it is not influenced by fictitious Coulomb interactions between successive, charged reciprocal cells. Moreover, the contribution of the energy levels to the reactivity is simultaneously scaled based on their position relative to the Fermi level. Finally, the obtained Fermi weighted density of states reactivity trends show a good agreement with the chemical characteristics of the investigated metal atoms as well as the experimental data., (© 2020 Wiley-VCH GmbH.)

Fission and fusion reactors can only play a role in the future energy landscape if they are inherently safe by design. For some reactor concepts, a major remaining issue is the undesired production of radiotoxic 210 Po. To filter out the volatile Po species, information on their molecular composition is needed. An experimental characterization is very challenging due to the large required amount of radioactive Po. An alternative quantum chemistry approach was taken to predict the temperature-dependent stability of relevant diatomic Po-containing molecules. Experimental data on lighter analogue molecules was used to establish a well-founded methodology. The relative occurrence of the Po species was estimated in the cover gas of (i) the lead-bismuth eutectic coolant in the accelerator-driven MYRRHA fission reactor and (ii) the Pb-Li eutectic tritium breeder in the DEMO fusion reactor. In both systems, Po is found to occur mainly as PbPo molecules and atomic Po.

Using first-principles total energy calculations we have evaluated the thermodynamics and the electronic properties of intrinsic vacancy defects in orthorhombic CaZrO 3 . Charge density calculations and the atoms-in-molecules concept are used to elucidate the changes in electronic properties of CaZrO 3 upon the introduction of vacancy defects. We explore the chemical stability and defect formation energies of charge-neutral as well as of charged intrinsic vacancies under various synthesis conditions and also present full and partial Schottky reaction energies. The calculated electronic properties indicate that hole-doped state can be achieved in charge neutral Ca vacancy containing CaZrO 3 under oxidation condition, while reduction condition allows to control the electrical conductivity of CaZrO 3 depending on the charge state and concentration of oxygen vacancies. The clustering of neutral oxygen vacancies in CaZrO 3 is examined as well. This provides useful information for tailoring the electronic properties of this material. We show that intentional incorporation of various forms of intrinsic vacancy defects in CaZrO 3 allows to considerably modify its electronic properties, making this material suitable for a wide range of applications.

The widespread popularity of density functional theory has given rise to an extensive range of dedicated codes for predicting molecular and crystalline properties. However, each code implements the formalism in a different way, raising questions about the reproducibility of such predictions. We report the results of a community-wide effort that compared 15 solid-state codes, using 40 different potentials or basis set types, to assess the quality of the Perdew-Burke-Ernzerhof equations of state for 71 elemental crystals. We conclude that predictions from recent codes and pseudopotentials agree very well, with pairwise differences that are comparable to those between different high-precision experiments. Older methods, however, have less precise agreement. Our benchmark provides a framework for users and developers to document the precision of new applications and methodological improvements., (Copyright © 2016, American Association for the Advancement of Science.)

Experimental nonstoichiometries of colloidal nanocrystals such as CdSe and PbS are accounted for by attributing to each constituent atom and capping ligand a formal charge equal to its most common oxidation state to obtain an overall neutral nanocrystal. In spite of its apparent simplicity, little theoretical support of this approach-called here the oxidation-number sum rule-is present in the current literature. Here, we introduce the ligand addition energy, which we define as the energy gained or expended upon the transfer of one ligand from a reference state to a metal-rich solid surface. For the combination of CdSe, ZnSe and InP with either chalcogen, halogen or hydrochalcogen ligands, we compute successive ligand addition energies using ab initio methods and determine the thermodynamically stable surface composition as that composition where ligand addition turns endothermic. We find that the oxidation-number sum rule is valid in many situations, although exceptions occur for each material studied, most notably when exposed to small oxidative ligands. In the case of InP, however, violations are more severe, extending toward the entire chalcogen ligand family. In addition, we find that electronegativity rather than chemical hardness is a reasonable predictor for ligand addition energies, with the most electronegative ligands yielding the most exothermic addition energies. Finally, we argue that the ligand addition energy will be a most useful quantity for future computational studies on the structure, stability and reactivity of nanocrystal surfaces.

We investigate the relation between the chain length of ligands used and the size of the nanocrystals formed in the hot injection synthesis. With two different CdSe nanocrystal syntheses, we consistently find that longer chain carboxylic acids result in smaller nanocrystals with improved size dispersions. By combining a more in-depth experimental investigation with kinetic reaction simulations, we come to the conclusion that this size tuning is due to a change in the diffusion coefficient and the solubility of the solute. The relation between size tuning by the ligand chain length and the coordination of the solute by the ligands is further explored by expanding the study to amines and phosphine oxides. In line with the weak coordination of CdSe nanocrystals by amines, no influence of the chain length on the nanocrystals is found, whereas the size tuning brought about by phosphine oxides can be attributed to a solubility change. We conclude that the ligand chain length provides a practical handle to optimize the outcome of a hot injection synthesis in terms of size and size dispersion and can be used to probe the interaction between ligands and the actual solute.

We propose a procedure to rank the most interesting solutions from high-throughput materials design studies. Such a tool is becoming indispensable due to the growing size of computational screening studies and the large number of criteria involved in realistic materials design. As a proof of principle, the binary tungsten alloys are screened for both large-weight and high-impact materials, as well as for fusion reactor applications. Moreover, the concept is generally applicable to any design problem where multiple competing criteria have to be optimized.

The penetration of s- and p(1/2)-electrons into the atomic nucleus leads to a variety of observable effects. The presence of s-electrons inside the nucleus gives rise to the isotope shift in atomic spectroscopy, and to the isomer shift in Mössbauer spectroscopy. Both well-known phenomena are manifestations of the more general monopole shift. In a recent paper (Koch et al., Phys. Rev. A, 2010, 81, 032507), we discussed the existence of the formally analogous quadrupole shift: a tensor correction to the electric quadrupole interaction due to the penetration of relativistic p(1/2)-electrons into the nucleus. The quadrupole shift is predicted to be observable by high-accuracy molecular spectroscopy on a set of 4 molecules (the quadrupole anomaly). The simple physics behind all these related phenomena is easily obscured by an elaborate mathematical formalism that is required for their derivation: a multipole expansion in combination with perturbation theory, invoking quantum physics and ideally relativity. In the present paper, we take a totally different approach. We consider three classical 'toy models' that can be solved by elementary calculus, and that nevertheless contain all essential physics of the monopole and quadrupole shifts. We hope that this intuitive (yet exact) analysis will increase the understanding about multipole shift phenomena in a broader community.

We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the substitutional Ge position. Less expected is the observation of a second fraction on the sixfold coordinated bond-centered site. Ab initio calculated heats of formation suggest this is the result of the trapping of a vacancy by a substitutional TM impurity, spontaneously forming an impurity-vacancy complex in the split-vacancy configuration. We also present an approach to displace the TM impurities from the electrically active substitutional site to the bond-centered site.

We have observed large 4d moments on isolated Mo atoms at substitutional and octahedral interstitial lattice sites in Yb metal, showing Curie-Weiss local susceptibility and a Korringa-like spin relaxation rate. The interstitial Mo atoms, despite strong hybridization with the Yb neighbors, show rather small Kondo temperature ( T(K)