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The stable complex [bis(toluene-3,4-dithiolato)copper(III)][NEt3H] has been synthesised and characterised as a square-planar Cu(III) complex by X-ray photoelectron spectroscopy, cyclic voltammetry and DFT calculations. Intriguingly, when fragmented in FTICR-MS, an unusual [(toluene-3,4-dithiolate)Cu(III)(peroxide)]− complex is formed by reaction with oxygen. Natural 1,2-dithiolenes known to bind molybdenum might stabilise Cu(III) in vivo. [ABSTRACT FROM AUTHOR]

Electrochemical advanced oxidation (EAO) systems are of significant interest due to their ability to treat a wide range of organic contaminants in water. Boron doped diamond (BDD) electrodes have found considerable use in EAO. Despite their popularity, no laboratory scale method exists to quantify anodic corrosion of BDD electrodes under EAO conditions; all are qualitative using techniques such as scanning electron microscopy, electrochemistry, and spectroscopy. In this work, we present a new method which can be used to quantify average corrosion rates as a function of solution composition, current density, and BDD material properties over relatively short time periods. The method uses white light interferometry (WLI), in conjunction with BDD electrodes integrated into a 3D-printed flow cell, to measure three-dimensional changes in the surface structure due to corrosion over a 72 h period. It is equally applicable to both thin film and thicker, freestanding BDD. A further advantage of WLI is that it lends itself to large area measurements; data are collected herein for 1 cm diameter disk electrodes. Using WLI, corrosion rates as low as 1 nm h -1 can be measured. This enables unequivocal demonstration that organics in the EAO solution are not a prerequisite for BDD anodic corrosion. However, they do increase the corrosion rates. In particular, we quantify that addition of 1 M acetic acid to 0.5 M potassium sulfate results in the average corrosion rate increasing ∼60 times. In the same solution, microcrystalline thin film BDD is also found to corrode ∼twice as fast compared to freestanding polished BDD, attributed to the presence of increased sp 2 carbon content. This methodology also represents an important step forward in the prediction of BDD electrode lifetimes for a wide range of EAO applications., Competing Interests: The authors declare no competing financial interest., (© 2024 The Authors. Published by American Chemical Society.)

For the detection of electrochemically produced hydroxyl radicals (HO · ) from the oxidation of water on a boron-doped diamond (BDD) electrode, electron paramagnetic resonance spectroscopy (EPR) in combination with spin trap labels is a popular technique. Here, we show that quantification of the concentration of HO · from water oxidation via spin trap electrochemical (EC)-EPR is problematic. This is primarily due to the spin trap oxidizing at potentials less positive than water, resulting in the same spin trap-OH · adduct as formed from the solution reaction of OH · with the spin trap. We illustrate this through consideration of 5,5-dimethyl-1-pyrroline N -oxide (DMPO) as a spin trap for OH · . DMPO oxidation on a BDD electrode in an acidic aqueous solution occurs at a peak current potential of +1.90 V vs SCE; the current for water oxidation starts to rise rapidly at ca. +2.3 V vs SCE. EC-EPR spectra show signatures due to the spin trap adduct (DMPO-OH · ) at potentials lower than that predicted thermodynamically (for water/HO · ) and in the region for DMPO oxidation. Increasing the potential into the water oxidation region, surprisingly, shows a lower DMPO-OH · concentration than when the potential is in the DMPO oxidation region. This behavior is attributed to further oxidation of DMPO-OH · , production of fouling products on the electrode surface, and bubble formation. Radical scavengers (ethanol) and other spin traps, here N - tert -butyl- α -phenylnitrone, α -(4-pyridyl N -oxide)- N - tert -butylnitrone, and 2-methyl-2-nitrosopropane dimer, also show electrochemical oxidation signals less positive than that of water on a BDD electrode. Such behavior also complicates their use for the intended application., Competing Interests: The authors declare no competing financial interest., (© 2022 The Authors. Published by American Chemical Society.)

Atomic-scale defects can control the exploitable optoelectronic performance of crystalline materials, and several point defects in diamond are emerging functional components for a range of quantum technologies. Nitrogen and hydrogen are common impurities incorporated into diamond, and there is a family of defects that includes both. The N 3 VH 0 defect is a lattice vacancy where three nearest neighbor carbon atoms are replaced with nitrogen atoms and a hydrogen is bonded to the remaining carbon. It is regularly observed in natural and high-temperature annealed synthetic diamond and gives rise to prominent absorption features in the mid-infrared. Here, we combine time- and spectrally resolved infrared absorption spectroscopy to yield unprecedented insight into the N 3 VH 0 defect's vibrational dynamics following infrared excitation of the C-H stretch. In doing so, we gain fundamental information about the energies of quantized vibrational states and corroborate our results with theory. We map out, for the first time, energy relaxation pathways, which include multiphonon relaxation processes and anharmonic coupling to the C-H bend mode. These advances provide new routes to quantify and probe atomic-scale defects.