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The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of α/4π per surface. Here we report on the observation of this so-called topological magnetoelectric effect. We use monochromatic terahertz (THz) spectroscopy of TI structures equipped with a semitransparent gate to selectively address surface states. In high external magnetic fields, we observe a universal Faraday rotation angle equal to the fine structure constant α=e2/2hc (in SI units) when a linearly polarized THz radiation of a certain frequency passes through the two surfaces of a strained HgTe 3D TI. These experiments give insight into axion electrodynamics of TIs and may potentially be used for a metrological definition of the three basic physical constants. [ABSTRACT FROM AUTHOR]

It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. We report on a set of experimental observations supporting the existence of additional massive surface states. These states are also confined by the band inversion at a topological-trivial semiconductor heterojunction. While first introduced by Volkov and Pankratov (VP) before the understanding of the topological nature of such a junction, they were not experimentally identified. Here we identify their signatures on transport properties at high electric field. By monitoring the ac admittance of HgTe topological-insulator field-effect capacitors, we access the compressibility and conductivity of surface states in a broad range of energies and electric fields. The Dirac states are characterized by a compressibility minimum, a linear energy dependence, and a high mobility persisting up to energies much larger than the transport band gap of the bulk. At higher energies, we observe multiple anomalous behaviors in conductance, charge metastability, and Hall resistance that point towards the contribution of massive surface states in transport scattering and charge transfer to the bulk. The spectrum of these anomalies agrees with predictions of a phenomenological model of VP states in a smooth topological heterojunction. The model accounts for the finite interface depth, the effect of electric fields including Dirac screening, and predicts the energy of the first VP state. The massive surface states are a hallmark of topological heterojunctions, whose understanding is crucial for transport studies and applications. [ABSTRACT FROM AUTHOR]

We utilize a diffusion-controlled wet chemical etching technique to fabricate microstructures from two-dimensional HgTe/(Hg,Cd)Te-based topological insulators. For this purpose, we employ a KI: I 2 : HBr: H 2 O-based etchant. Investigation of the side profile of the etched heterostructure reveals that HgTe quantum wells protrude from the layer stack as a result of the different etch rates of the layers. This constraint poses challenges for the study of the transport properties of edge channels in HgTe quantum wells. In order to achieve a smoother side profile, we develop a novel approach to the etching process involving the incorporation of a sacrificial design element in the etch mask. This limits the flow of charge carriers to the ions in the electrolyte during the etching process. The simplicity of the method coupled with the promising results achieved thereby should make it possible for the new approach introduced here to be applied to other semiconductor heterostructures., (© 2023 IOP Publishing Ltd.)

Soon after the discovery of the quantum spin Hall effect, it has been predicted that a magnetic impurity in the presence of strong Coulomb interactions will destroy the quantum spin Hall effect. However, the fate of the quantum spin Hall effect in the presence of magnetic impurities has not yet been experimentally investigated. Here, we report the successful experimental demonstration of a quantized spin Hall resistance in HgTe quantum wells dilutely alloyed with magnetic Mn atoms. These quantum wells exhibit an inverted band structure that is very similar to that of the undoped material. Micron sized devices of (Hg,Mn)Te quantum well (in the topological phase) show a quantized spin Hall resistance of h/2e 2 at low temperatures and zero magnetic field. At finite temperatures, we observe signatures of the Kondo effect due to interaction between the helical edge channels and magnetic impurities. Our work lays the foundation for future investigations of magnetically doped quantum spin Hall materials towards the realization of chiral Majorana fermions.

Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the response of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales and suggest that edge states can be addressed selectively on timescales over which bulk carriers are frozen.

The topic of two-dimensional topological insulators has blossomed after the first observation of the quantum spin Hall (QSH) effect in HgTe quantum wells. However, studies have been hindered by the relative fragility of the edge states. Their stability has been a subject of both theoretical and experimental investigation in the past decade. Here, we present a new generation of high quality (Cd,Hg)Te/HgTe-structures based on a new chemical etching method. From magnetotransport measurements on macro- and microscopic Hall bars, we extract electron mobilities μ up to about 400 × 10 3  cm 2 /(V s), and the mean free path λ mfp becomes comparable to the sample dimensions. The Hall bars show quantized spin Hall conductance, which is remarkably stable up to 15 K. The clean and robust edge states allow us to fabricate high quality side-contacted Josephson junctions, which are significant in the context of topological superconductivity. Our results open up new avenues for fundamental research on QSH effect as well as potential applications in spintronics and topological quantum computation.