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The structural and optical properties of p-doped Ge quantum wells separated by SiGe barriers are presented. The composition profile was determined by atom probe tomography and X-ray diffraction measurements. The energy and broadening of the fundamental intersubband transition were studied by Fourier transform infrared spectroscopy which revealed a strong absorption peak around 8.5 μm making this or similar heterostructures suitable for the realization of optoelectronic devices working in the fingerprint region.

Plasma‐facing liquids (PFLs) facilitate the storage of reactive O and N species (RONS), including H2O2 and NO2−, which remain in the PFL after plasma treatment, and they can continuously influence the target immersed in the liquid. However, their behaviors and levels of generation and extinction depend strongly on the plasma characteristics and liquid condition. Therefore, understanding the effects of the liquid type on the plasma discharge characteristics and the RONS generated via plasma discharge is necessary. We compared the RONS generation and storage trends of deionized H2O and a high‐conductivity PFL, RPMI 1640, which is a well‐known cell culture medium commonly used to culture mammalian cells. RPMI 1640 acted as an electrode and enhanced the plasma discharge power by supplying abundant radicals and RONS. The production of gaseous hydroxyl radicals and NO markedly increased, which facilitated H2O2 and NO2− production in the PFL for the first 200 s, and then the increase in the RONS concentration stagnated. With respect to storage, as the components within RMPI 1640 exhibited high reaction constants for their reactions with H2O2, H2O2 elimination was completed in <30 min. Unlike H2O2, the concentration of NO2− in the PFL was unchanged. [ABSTRACT FROM AUTHOR]

Media exposed to atmospheric pressure plasma (APP) produce reactive oxygen and nitrogen species (RONS), with hydrogen peroxide (H2O2), nitrite (NO2−), and nitrate (NO3−) being among the most detected species due to their relatively long lifetime. In this study, a standardized microwave-excited (ME) APP jet (APPJ) source was employed to produce gaseous RONS to treat liquid samples. The source was a commercially available plasma jet, which generated argon plasma utilizing a coaxial transmission line resonator at the operating frequency of 2.45 GHz. An ultraviolet-visible spectrophotometer was used to measure the concentrations of H2O2 and NO3− in plasma-activated media (PAM). Three different types of media (deionized water, Hank's balanced salt solution, and cell culture solution Dulbecco's modified eagles medium [DMEM]) were utilized as liquid samples. Among these media, the plasma-treated DMEM was observed to have the highest levels of H2O2 and NO3−. Subsequently, the feasibility of using argon ME-APPJ-activated DMEM (PAM) as an adjuvant to enhance the therapeutic effects of cisplatin on human bladder cancer cells (T-24) was investigated. Various cancer cell lines, including T-24 cells, treated with PAM were observed in vitro for changes in cell viability using the 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyl-2H-tetrazolium bromide (MTT) assay. A viability reduction was detected in the various cancer cells after incubation in PAM. Furthermore, the study's results revealed that PAM was effective against cisplatin-resistant T-24 cells in vitro. In addition, a possible connection between HER expression and cell viability was sketched. [ABSTRACT FROM AUTHOR]

Over the past three decades, the growth of Bi thin films has been extensively explored due to their potential applications in various fields such as thermoelectrics, ferroelectrics, and recently for topological and neuromorphic applications, too. Despite significant research efforts in these areas, achieving reliable and controllable growth of high-quality Bi thin-film allotropes has remained a challenge. Previous studies have reported the growth of trigonal and orthorhombic phases on various substrates yielding low-quality epilayers characterized by surface morphology. In this study, we present a systematic growth investigation, enabling the high-quality growth of Bi epilayers on Bi-terminated Si (111) 1 × 1 surfaces using molecular beam epitaxy. Our work yields a phase map that demonstrates the realization of trigonal, orthorhombic, and pseudocubic thin-film allotropes of Bi. In-depth characterization through X-ray diffraction (XRD) techniques and scanning transmission electron microscopy (STEM) analysis provides a comprehensive understanding of phase segregation, phase stability, phase transformation, and phase-dependent thickness limitations in various Bi thin-film allotropes. Our study provides recipes for the realization of high-quality Bi thin films with desired phases, offering opportunities for the scalable refinement of Bi into quantum and neuromorphic devices and for revisiting technological proposals for this versatile material platform from the past 30 years. [ABSTRACT FROM AUTHOR]

To the best of our knowledge, few studies have utilized cold plasma to improve soybean protein extraction yield and the functional properties of soybean protein. In this study, we aimed to assess the benefits of remote plasma treatments on soybean with respect to the utilization of soybean protein. This study involved two different sample forms (whole and crushed beans), two different plasma chemistry modes (ozone and nitrogen oxides [NOx = NO + NO2]), and a novel pressure-swing reactor. Crushed soybeans were significantly affected by NOx-mode plasma treatment. Crushed soybeans treated with NOx-mode plasma had the best outcomes, wherein the protein extraction yield increased from 31.64% in the control to 37.90% after plasma treatment. The water binding capacity (205.50%) and oil absorption capacity (267.67%) of plasma-treated soybeans increased to 190.88% and 246.23 % of the control, respectively. The emulsifying activity and emulsion stability slightly increased compared to those of the control. The secondary structure and surface hydrophobicity were altered. The remote plasma treatment of crushed soybeans increased soybean protein extraction yield compared to plasma-treated whole beans as well as untreated beans and altered the structural and physicochemical properties of soybean proteins. [ABSTRACT FROM AUTHOR]

Effects of duty ratio of a unipolar microsecond-pulsed helium atmospheric-pressure plasma jet (APPJ) on liquid- and polymer-surface treatments were investigated. In addition, changes in the plasma plume length, gas temperature, excitation temperature, discharge current, absorption power, and optical emission spectra were examined by varying the other operating parameters, such as applied voltage and additive flow of oxygen or water vapor. As an example of liquid sample, de-ionized water (DW) was exposed to an APPJ, and the concentrations of the reactive species generated in the DW were measured as functions of the operating parameters. Polycarbonate, polypropylene, and polymethylmethacrylate were employed as exemplary substrate materials to investigate the effect of plasma treatment on polymeric surfaces. The APPJ treatment increased the surface energy and changed the wetting characteristics of the surface from hydrophobic to hydrophilic. X-ray photoelectron spectroscopy results showed that a short-time plasma treatment with He and/or He/O2, He/H2O affects the surface wettability owing to the introduction of polar groups. [ABSTRACT FROM AUTHOR]

Neuromorphic computing employs a great number of artificial synapses which transfer information between neurons. Conventional two‐ or three‐terminal artificial synapses with homosynaptic plasticity suffer from a positive feedback loop problem. Synapses with heterosynaptic plasticity are thus required to perform learning, processing and modulating simultaneously. Here, complementary metal‐oxide‐semiconductor compatible artificial synapses based on ferroelectric polarization modulated Schottky diodes (FEMOD) on silicon, which enables heterosynaptic plasticity with multi‐functionalities, high endurance, low power consumption, and high speed, are presented. High accuracy is obtained in the supervised learning simulation of artificial neural networks due to the large number of conductance states, good linearity, and small variations of FEMOD synapses. Boolean functions are demonstrated with only one or two FEMOD devices operating at low voltage and low power consumption. The proposed device structure performs multi‐functions of biological synapse and Boolean logic, thus provides high potential for the future large scale and low power neuromorphic computing applications. [ABSTRACT FROM AUTHOR]

Despite continuous progress in therapy, melanoma is one of the most aggressive and malignant human tumors, often relapsing and metastasizing to almost all organs. Cold atmospheric plasma (CAP) is a novel anticancer tool that utilizes abundant reactive oxygen and nitrogen species (RONS) being deposited on the target cells and tissues. CAP-induced differential effects between non-cancerous and cancer cells were comparatively examined. Melanoma and non-cancerous skin fibroblast cells (counterparts; both cell types were isolated from the same patient) were used for plasma–cell interactions. The production of intracellular RONS, such as nitric oxide (NO), hydroxyl radical (•OH), and hydrogen peroxide (H2O2), increased remarkably only in melanoma cancer cells. It was observed that cancer cells morphed from spread to round cell shapes after plasma exposure, suggesting that they were more affected than non-cancerous cells in the same plasma condition. Immediately after both cell types were treated with plasma, there were no differences in the amount of extracellular H2O2 production, while Hanks' balanced salt solution-containing cancer cells had lower concentrations of H2O2 than that of non-cancerous cells at 1 h after treatment. The melanoma cells seemed to respond to CAP treatment with a greater rise in RONS and a higher consumption rate of H2O2 than homologous non-cancerous cells. These results suggest that differential sensitivities of non-cancerous skin and melanoma cells to CAP-induced RONS can enable the applicability of CAP in anticancer therapy. [ABSTRACT FROM AUTHOR]

Peanut (Arachis hypogaea L.) shell, an abundant by-product of peanut production, contains a complex combination of organic compounds, including flavonoids. Changes in the total phenolic content, flavonoid content, antioxidant capacities, and skin aging-related enzyme (tyrosinase, elastase, and collagenase)-inhibitory activities of peanut shell were investigated after treatment in pressure swing reactors under controlled gas conditions using surface dielectric barrier discharge with different plasma (NOx and O3) and temperature (25 and 150 °C) treatments. Plasma treatment under ozone-rich conditions at 150 °C significantly affected the total phenolic (270.70 mg gallic acid equivalent (GAE)/g) and flavonoid (120.02 mg catechin equivalent (CE)/g) contents of peanut shell compared with the control (253.94 and 117.74 mg CE/g, respectively) (p < 0.05). In addition, with the same treatment, an increase in functional compound content clearly enhanced the antioxidant activities of components in peanut shell extracts. However, the NOx-rich treatment was significantly less effective than the O3 treatment (p < 0.05) in terms of the total phenolic content, flavonoid content, and antioxidant activities. Similarly, peanut shells treated in the reactor under O3-rich plasma conditions at 150 ℃ had higher tyrosinase, elastase, and collagenase inhibition rates (55.72%, 85.69%, and 86.43%, respectively) compared to the control (35.81%, 80.78%, and 83.53%, respectively). Our findings revealed that a reactor operated with O3-rich plasma-activated gas at 150 °C was better-suited for producing functional industrial materials from the by-products of peanuts. [ABSTRACT FROM AUTHOR]

Plasma activated medium (PAM) was prepared by a bipolar microsecond-pulsed atmospheric pressure plasma jet (APPJ) array source and was utilized for cancer cell treatment. APPJ array-produced plasma were characterized. APPJ array treatment of three different solutions (deionized water (DW), HBSS (serum-free Hanks' balanced salt solution), and DMEM (Dulbecco's Modified Eagle Medium) + 10% FBS (fetal bovine serum)) were performed to induce the changes in the concentration of reactive oxygen and nitrogen species (RONS) as functions of the operating parameters. Human cervical cancer cells (HeLa) injected with plasma-treated media were investigated for changes in cell viability using MTT assay. It was observed that PAM-induced ROS can regulate the protein expression associated with mitochondria, and PAM causes apoptosis through Cyto C/JNK/p38 signaling on human cervical cancer cells. [ABSTRACT FROM AUTHOR]

Fully silicided source/drain Si gate-all-around (GAA) nanowire (NW) p-FETs with NW diameter of 5 nm are fabricated and characterized from room temperature (RT) down to 5.5 K. Thanks to the improved electrostatics by the scaled NW and 3D GAA structure, close to ideal transfer characteristics are obtained at both RT and 5.5 K with a sharp switching. Benefiting from less defects in Si created by the implantation into silicide (IIS) process, the band tail effects and neutral defects scattering are suppressed. Therefore, the fabricated Si GAA NW p-FETs provide very low subthreshold swing SS of 3.4 mV/dec in the weak inversion region and an average SSth of 14 mV/dec measured from the off-state to the threshold voltage, as well as an improved transconductance Gm at 5.5 K. [ABSTRACT FROM AUTHOR]

In the cover picture, the plasma jet located on the liquid surface transfers plasma‐generating chemical species to the liquid as the plume facing the liquid. Depending on the condition of the liquid (conductivity, bubble content, etc.), the intensity of the plasma can be strengthened or weakened. In addition, the survival time of plasma‐generated chemical species can also be determined. More details can be found in the Research Article by Joo Young Park, Jin Hee Bae, and Seunghun Lee (DOI: 10.1002/open.202300213)...By Joo Young Park; Jin Hee Bae and Seunghun LeeReported by Author; Author; Author [Extracted from the article]

Harvesting the full potential of single-crystal semiconductor nanowires (NWs) for advanced nanoscale field-effect transistors (FETs) requires a smart combination of charge control architecture and functional semiconductors. In this article, high-performance vertical gate-all-around NW p-type FETs (p-FETs) are presented. The device concept is based on advanced Ge0.92Sn0.08/Ge group IV epitaxial heterostructures, employing quasi–one-dimensional semiconductor NWs fabricated with a top-down approach. The advantage of using a heterostructure is the possibility of electronic band engineering with band offsets tunable by changing the semiconductor stoichiometry and elastic strain. The use of a Ge0.92Sn0.08 layer as the source in GeSn/Ge NW p-FETs results in a small subthreshold slope of 72 mV/dec and a high ION/IOFF ratio of 3 × 106. A ∼32% drive current enhancement is obtained compared to the vertical Ge homojunction NW control devices. More interestingly, the drain-induced barrier lowering is much smaller with GeSn instead of Ge as the source. The general improvement of the transistor's key figures of merits originates from the valence band offset at the Ge0.92Sn0.08/Ge heterojunction, as well as from a smaller NiGeSn/GeSn contact resistivity. [ABSTRACT FROM AUTHOR]

In this work, we demonstrate vertical Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a CMOS compatible top-down approach. Vertical Ge nanowires with diameters down to 20 nm and an aspect ratio of ~11 were achieved by optimized Cl2-based dry etching and self-limiting digital etching. Employing a GAA architecture, post-oxidation passivation and NiGe contacts, high performance Ge nanowire pMOSFETs exhibit low SS of 66 mV/dec, small DIBL of 35 mV/V and a high $\text {I}_{ \mathrm{\scriptscriptstyle ON}}/\text{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of ${2.1}\times {10}^{{6}}$. The electrical behavior was also studied with temperature-dependent measurements. The deviation between the experimental SS and the ideal kT/q $\cdot $ ln10 values stems from the density of interface traps $(\text {D}_{\text {it}})$. Our measurements suggest that lowering the top contact resistance is a key to further performance improvement of vertical Ge GAA nanowire transistors. [ABSTRACT FROM AUTHOR]

This paper proposes a feature selection method that is effective in distinguishing colorectal cancer patients from normal individuals using K-means clustering and the modified harmony search algorithm. As the genetic cause of colorectal cancer originates from mutations in genes, it is important to classify the presence or absence of colorectal cancer through gene information. The proposed methodology consists of four steps. First, the original data are Z-normalized by data preprocessing. Candidate genes are then selected using the Fisher score. Next, one representative gene is selected from each cluster after candidate genes are clustered using K-means clustering. Finally, feature selection is carried out using the modified harmony search algorithm. The gene combination created by feature selection is then applied to the classification model and verified using 5-fold cross-validation. The proposed model obtained a classification accuracy of up to 94.36%. Furthermore, on comparing the proposed method with other methods, we prove that the proposed method performs well in classifying colorectal cancer. Moreover, we believe that the proposed model can be applied not only to colorectal cancer but also to other gene-related diseases. [ABSTRACT FROM AUTHOR]

Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge 1- x Sn x alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge 1- x Sn x layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge 1- x Sn x layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N 2 carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)