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GaSxSe1−x solid solutions are layered semiconductors with a band gap between 2.0 and 2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with weak polarization bonds between them, which allows obtaining, by splitting, plan-parallel lamellae with atomically smooth surfaces. By heat treatment in a normal or water vapor-enriched atmosphere, their plates are covered with a layer consisting of β–Ga2O3 nanowires/nanoribbons. In this work, the elemental and chemical composition, surface morphology, as well as optical, photoluminescent, and photoelectric properties of β–Ga2O3 layer formed on GaSxSe1−x (0 ≤ x ≤ 1) solid solutions (as substrate) are studied. The correlation is made between the composition (x) of the primary material, technological preparation conditions of the oxide-semiconducting layer, and the optical, photoelectric, and photoluminescent properties of β–Ga2O3 (nanosized layers)/GaSxSe1−x structures. From the analysis of the fundamental absorption edge, photoluminescence, and photoconductivity, the character of the optical transitions and the optical band gap in the range of 4.5–4.8 eV were determined, as well as the mechanisms behind blue-green photoluminescence and photoconductivity in the fundamental absorption band region. The photoluminescence bands in the blue-green region are characteristic of β–Ga2O3 nanowires/nanolamellae structures. The photoconductivity of β–Ga2O3 structures on GaSxSe1−x solid solution substrate is determined by their strong fundamental absorption. As synthesized structures hold promise for potential applications in UV receivers, UV-C sources, gas sensors, as well as photocatalytic decomposition of water and organic pollutants.

TiO2–SiO2 nanocomposite thin films have gained the attention of the scientific community due to their unique physical and chemical properties. In this paper, we report on the fabrication and characterization of a TiO2–SiO2 nanocomposite disk-shaped target. The target was used for the deposition of TiO2–SiO2 nanocomposite thin films on fluorine-doped tin oxide/glass substrates using the pulsed laser deposition (PLD) technique. The thicknesses of the thin films were fixed to 100 nm, and the deposition temperature ranged from room temperature to 300 °C. As revealed by the microstructural and morphological characterizations revealed, the TiO2–SiO2 nanocomposite thin films are amorphous and display homogeneous distribution. The determined values of the indirect optical band gap range from 2.92 to 3.07 eV, while those of the direct optical band gap lie between 3.50 and 3.55 eV. Additionally, as the deposition temperature decreases, the light transmission increases in the visible and in the ultraviolet ranges, which is suitable for flexible perovskite solar cells. This research can uncover new insights into the fabrication of amorphous TiO2–SiO2-based nanostructured thin films using the PLD technique for perovskite solar cell technology.

In this work, the effects of graphene oxide (GO) concentrations (1.5 wt.%, 2.5 wt.%, and 5 wt.%) on the structural, morphological, optical, and luminescence properties of zinc oxide nanorods (ZnO NRs)/GO nanocomposites, synthesized by a facile hydrothermal process, were investigated. X-ray diffraction (XRD) patterns of NRs revealed the hexagonal wurtzite structure for all composites with an average coherence length of about 40–60 nm. A scanning electron microscopy (SEM) study confirmed the presence of transparent and wrinkled, dense GO nanosheets among flower-like ZnO nanorods, depending on the GO amounts used in preparation. Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), ultraviolet–visible (UV–Vis) absorption spectroscopy, and photoluminescence (PL) measurements revealed the impact of GO concentration on the optical and luminescence properties of ZnO NRs/GO nanocomposites. The energy band gap of the ZnO nanorods was independent of GO concentration. Photoluminescence spectra of nanocomposites showed a significant decrease in the intensities in the visible light range and red shifted suggesting a charge transfer process. The nanocomposites’ chromaticity coordinates for CIE 1931 color space were estimated to be (0.33, 0.34), close to pure white ones. The obtained results highlight the possibility of using these nanocomposites to achieve good performance and suitability for optoelectronic applications.