1. HCVD法生长InN 纳米棒的可控制备及表征.
- Author
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朱 佳, 岳明月, 李天保, 刘培植, 郭俊杰, and 许并社
- Abstract
In this study, controlled growth of InN nanorods on Si (111 ) substrates is realized by a self-made haliide chemical vapor deposition (HCVD) device. The effects of temperature in the source region of InCI3, NH3 flow rate and N2 carrier gas flow rate on the growth of InN nanorods are systematically studied. The structure, morphology and elemental composition of InN nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The results show that the nucleation rate and growth rate of InN nanorods can be improved with the increase of temperature in the source region of InCl3. The NH3 flow rate has an important influence on the crystal quality of InN nanorods. The appropriate NH3 flow rate can meet the V/III ratio required for In source growth, and improve the quality of nanorods. When the NH3 flow rate is too high, the formation of In vacancy defects make the crystal quality worse. N2 carrier gas flow can affect the concentration and bias of In and N sources, which can effectively regulate the diameter and growth rate of InN nanorods. The controllable growth of InN nanorods is realized, which lays a foundation for the development of high performance InN nanorod devices. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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