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Your search keyword '"Manchanda, L."' showing total 1 results
Start Over "Manchanda, L." Topic electronics Publication Type Academic Journals
1 results on '"Manchanda, L."'

1. Thickness dependence of boron penetration through O2- and N2O-grown gate oxides and its impact on threshold voltage variation

Author

Krisch, K.S., Green, M.L., Baumann, F.H., Brasen, D., Feldman, L.C., and Manchanda, L.

Subjects
Dielectrics -- Research, Boron -- Observations, Gates (Electronics) -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Boron penetration through 5 nm to 8 nm gate dielectrics grown in O2 or N2O via RTO increases exponentially with decreasing oxide thickness. A physical model describes the thickness dependence observed for boron penetration. The model enables prediction of the minimum oxide thickness required to inhibit boron penetration. The significance of boron-induced threshold voltage variation in ULSI technologies is studied.

Published
1996

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