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Ga0.84In0.16As0.22Sb0.78 quaternary solid solutions, lattice matched to InAs, were grown by liquid phase epitaxy on (100)-oriented p-InAs substrates from In-rich melt. The p-type Ga0.84In0.16As0.22Sb0.78 layers were intentionally undoped or slightly doped with Sn to the hole concentration about p∼5×1016 cm-3. This allowed us to obtain a high-mobility∼(3.5-5.0)×104 cm2 V-1 s-1 electron channel at the type II broken-gap p-Ga0.84In0.16As0.22Sb0.78/p-InAs heterointerface. Low-temperature (T=5 K) electroluminescence spectra exhibited two pronounced emission bands hν1=0.372 eV and hν2=0.400 eV under forward bias. The emission band hν2 was split into two lines and was attributed to interband transitions through acceptor and valence-band states in the bulk InAs, whereas emission band hν1 was ascribed to interface-related radiative transitions of electrons from the two-dimensional electron channel to the interface states at the p-Ga0.84In0.16As0.22Sb0.78/p-InAs heteroboundary. [ABSTRACT FROM AUTHOR]

The effect of the interface roughness (IFR) scattering on the carrier mobility in type II broken-gap p-GaInAsSb/p-InAs heterostructures with self-consistent quantum wells at the interface has been studied experimentally. It was found that the low-temperature mobility decreases as μ∼d2 when the quantum well width at the interface changes from 400 to 50 Å upon raising the acceptor (Zn) doping level of the quaternary layer. It was established that the IFR scattering governs the low-temperature mobility in the two-dimensional electron channel at the heterointerface. The parameters of the IFR scattering, roughness height Δ=12 Å, and correlation length Λ=100 Å were evaluated on the basis of structural, photoluminescent, and magnetotransport data. [ABSTRACT FROM AUTHOR]

Layers of the GaSb1 − x As x alloy with arsenic content in the range x = 0.06–0.15 have been grown for the first time on InAs (100) substrates by metal-organic vapor-phase epitaxy. A new approach to the calculation of the band diagram of the GaSbAs alloy is suggested. It is demonstrated on the basis of magnetotransport measurements in p-GaSbAs/ p-InAs heterostructures and with the method suggested by the authors for the calculation of band diagrams for alloys in the GaSbAs system that, in the composition range under study, the GaSbAs/InAs heterojunction is a type II broken-gap heterojunction. [ABSTRACT FROM AUTHOR]