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Pastes based on copper (Cu) nanoparticles (NPs) are promising electronic-packaging materials for the attachment of high-power devices. However, the rapid oxidation of nanostructured Cu requires the use of reducing agents during processing, which makes it less suitable for attaching large-area dies (> 4 mm2). Recently, the functionalization of Cu-NP surfaces with a mixture of amines prevented oxidation, allowing for sintering without the need for reducing agents. Here we investigate the sintering mechanisms involved during die attachment using pastes of passivated Cu NPs, with particular focus on the critical role of the carrier solvents. Using 1-nonanol or 1-decanol as solvents, we first demonstrate the absence of Cu-oxide phases in the pastes after fabrication and the stability of the resulting nanostructured copper for as much as 30 min in air. By measuring the evolution of the electrical characteristics of the paste during drying and sintering, we show that electrically conductive agglomerates form among the NPs between 141°C and 144°C, independent of the carrier solvent used. The carrier solvent was found to affect mainly the densification temperature of the copper agglomerates. Because they lead to uniform sintering of the material, Cu pastes based on solvents with a low boiling point and high vapor pressure are preferable for attaching dies with area greater than 25 mm2. We show that dies with an area as large as 100 mm2 can be attached using a Cu paste based on 1-nonanol. These pastes enables the formation of temperature-resistant bonding for high-power devices using a simple and cost-effective approach. [ABSTRACT FROM AUTHOR]

Flip-chip interconnects made entirely from copper are promising candidates to overcome the intrinsic limits of solder-based interconnects and match the demand for increased current densities of high-performance microprocessors. To this end, dip-based all-copper interconnects have been demonstrated to be a viable approach to form electrical interconnects by sintering copper nanoparticles between the copper pillar and pad. However, the performance of this technology is limited by residual porosity of the copper joint formed between the pillar and the pad during sintering. Moreover, the applicability of this technology in the printed circuit board industry is constrained by thermomechanical stresses that arise from the sintering. Furthermore, the compatibility of the sintering approach with standard finishing layers used as diffusion-barrier layers to provide wetting and to prevent the oxidation of the pillar and pad surfaces is unknown. In this paper, we pursue the advancement of dip-based all-copper interconnect technology. We demonstrate the robustness of dip-transfer of copper paste for varying withdrawal velocities and typical nonuniformities in copper pillar heights. Moreover, we prove the applicability of this technology with fine pillar diameters and pitches down to 10 and $20~\mu \text{m}$ , respectively. In addition, we demonstrate reduced porosities of the copper joints by applying pressure during the bonding process at 200 °C. This densification leads to interconnects with four times the shear strength and half the electrical resistance compared to interconnects formed without the application of pressure. In addition, the bonding temperature is decreased to 160 °C by applying a novel copper paste formulation, reducing the thermomechanical stress in the assembly caused by the cooling from the sintering temperature. Finally, the compatibility of this technology with EPAG, ENIG, and ENEPIG finishing layers is demonstrated, with resulting shear strength of the interconnects above 70 MPa and electrical resistance comparable to the unfinished samples. [ABSTRACT FROM AUTHOR]

The thermal and electrical transport capabilities of materials in electronic packaging are key to supporting high-performance microelectronic systems. In composite and hybrid materials, both of these transport capabilities are limited by contact resistances. We propose a directed nanoparticle assembly method to reduce contact resistances by transforming point contacts between micrometer-sized objects into quasi-areal contacts. The nanoparticle assembly is directed by the formation of liquid bridges in contact points during the evaporation of a colloidal suspension. In this work, we experimentally study the evaporation of colloidal suspensions in confined porous media to yield uniform nanoparticle assembly, as required for electronic packaging. The evaporation pattern of liquids in confined pillar arrays is either branched or straight, depending on the surface tension of the liquid and on the pore size defined by the pillar size and spacing. Stable evaporation fronts result in uniform nanoparticle deposition above a bond number threshold of 10-3. However, at reduced evaporation dynamics, liquid pinning results from colloidal particle accumulations at the liquid-vapor interface, ultimately leading to undesired colloidal bridging between pillars. [ABSTRACT FROM AUTHOR]

Efficient thermal management of large vertically stacked integrated circuits (ICs) requires a material with high thermal conductivity inside the micrometer-sized gaps between the IC dies. Such an underfill material can be obtained by adding thermally conductive filler particles at high loadings to the adhesive matrix material. However, viscosity requirements for the state-of-the-art capillary-driven filling of particle-loaded adhesives limit the particle fill fraction to values lower than those necessary to reach true percolation. Accordingly, heat transfer through the composite material is dominated by conduction through the adhesive matrix material. We propose using an alternative, sequential filling method to achieve percolation with particles down to 1~\mu \textm in diameter. The percolating thermal underfill (PTU) can be achieved by a centrifuge-assisted filling of micrometer-sized particles, followed by a backfilling of a low-viscosity epoxy with long open time acting as matrix material, and a final thermal curing step. In this paper, we present and discuss the fabrication and relevant process parameters of the PTU composite material in chip stacks with critical dimensions below 30~\mu \textm . The wet dispensing of alumina particles with a diameter distribution of 1– 15~\mu \textm is proposed for overcoming the agglomeration observed for dry particle filling. Thermal conductivities of up to 3 W/( \ m\cdot \ K ) for the underfill system with a particle fill fraction of 61% were achieved, which is three times higher than those of commercially available capillary thermal underfills. Critical parameters in the formation of the percolating composite, such as the choice of filler material and its refinement, as well as the properties of the particle bed and the process parameters for the centrifugal filling, epoxy capillary backfilling, and composite curing are addressed. [ABSTRACT FROM PUBLISHER]