1. Relaxation oscillations and damping factors of 1.3 µm In(Ga)As/GaAs quantum-dot lasers.
- Author
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Mao, M.-H., Wu, T.-Y., Wu, D.-C., Chang, F.-Y., and Lin, H.-H.
- Subjects
QUANTUM theory ,LASERS ,OPTOELECTRONIC devices ,OSCILLATIONS ,DAMPING (Mechanics) ,ELECTRONICS - Abstract
In(Ga)As/GaAs quantum-dot (QD) lasers with emission wavelength at 1295 nm at room temperature are fabricated. The laser active region contains a threefold stack of QD layers with surface dot density of 4.56 × 10
10 cm-2 . The laser structure is aluminum-free with InGaP as cladding layers. Threshold current density of a narrow stripe laser of 8 µm wide and 3.5 mm long is 152.5 A/cm2 . The highest relaxation oscillation frequency measured at room temperature is 1.8 GHz, corresponding to a modulation bandwidth of 2.8 GHz due to the small damping factor. From the above measurement, the differential gain and gain compression factor were extracted to be 4.3 × 10-16 cm2 and 3.4 × 10-17 cm3 , respectively. Using these parameters, the maximum modulation bandwidthf3 dB max is estimated as 7.9 GHz. [ABSTRACT FROM AUTHOR]- Published
- 2004
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