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Abstract MXene is a promising energy storage material for miniaturized microbatteries and microsupercapacitors (MSCs). Despite its superior electrochemical performance, only a few studies have reported MXene‐based ultrahigh‐rate (>1000 mV s−1) on‐paper MSCs, mainly due to the reduced electrical conductance of MXene films deposited on paper. Herein, ultrahigh‐rate metal‐free on‐paper MSCs based on heterogeneous MXene/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS)‐stack electrodes are fabricated through the combination of direct ink writing and femtosecond laser scribing. With a footprint area of only 20 mm2, the on‐paper MSCs exhibit excellent high‐rate capacitive behavior with an areal capacitance of 5.7 mF cm−2 and long cycle life (>95% capacitance retention after 10,000 cycles) at a high scan rate of 1000 mV s−1, outperforming most of the present on‐paper MSCs. Furthermore, the heterogeneous MXene/PEDOT:PSS electrodes can interconnect individual MSCs into metal‐free on‐paper MSC arrays, which can also be simultaneously charged/discharged at 1000 mV s−1, showing scalable capacitive performance. The heterogeneous MXene/PEDOT:PSS stacks are a promising electrode structure for on‐paper MSCs to serve as ultrafast miniaturized energy storage components for emerging paper electronics.

Terahertz quantum cascade laser sources based on intra-cavity Cherenkov difference-frequency generation in dual-wavelength mid-infrared quantum cascade lasers are currently the only monolithic semiconductor laser technology that can deliver continuous-wave coherent terahertz output at room temperature. Because the Cherenkov difference-frequency generation process enables terahertz radiation generation and extraction across a wide range of frequencies, it is often assumed that phase-matching conditions for this process are automatically fulfilled. We theoretically analyze and experimentally demonstrate that phase-matching plays an important role in these devices, and significant improvements in terahertz power output can be achieved by adjusting the waveguide configuration of the quantum cascade lasers to provide better phase-matching.

Orientation-patterned gallium phosphide (OP-GaP) has been grown heteroepitaxially on OP gallium arsenide (GaAs) templates using hydride vapor phase epitaxy (HVPE). The effect of OP-GaAs template fabrication methods of epitaxial-inversion and wafer bonding on the heteroepitaxial OP-GaP growth has been investigated. OP-GaP layers with a growth rate of up to 35 µm/h and excellent domain fidelity were obtained. The growth rate and the domain fidelity have been revealed/studied by scanning electron microscope (SEM). In addition, we demonstrate that the crystalline quality of the individual domains, namely, the substrate-oriented domains (ODs) and the inverted domains (IDs), can be investigated by high-resolution x-ray diffraction reciprocal space mapping (HRXRDRSM), which can also indicate the domain fidelity. Attempts to increase the growth rate and improve the domain fidelity by increasing the III and V group precursors resulted in either an increase in the growth rate in the OP-GaP layers grown on epitaxial inversion OP-GaAs template at the expense of the domain crystalline quality and fidelity or an improvement in the crystalline quality of the domains at the expense of the growth rate in the OP-GaP layers grown on wafer-bonded OP-GaAs templates. In the case of OP-GaP grown on OP-GaAs templates prepared by epitaxial inversion, the crystalline quality of the ODs is better than that of the IDs, but it shows that the quality of the inverted layer in the template influences the quality and fidelity of the grown domains. To the authors’ knowledge, exploitation of HRXRDRSM studies on OP-GaP to establish the crystalline quality of its individual domains (ODs and IDs) is the first of its kind. OP-ZnSe grown on OP-GaAs templates has also been included in this study to further emphasize the potential of this method. We propose from this study that once the growth rate is optimized from SEM studies, HRXRDRSM analysis alone can be used to assess the structural quality and to infer the domain fidelity of the OP structures.

Terahertz quantum cascade laser sources based on intra-cavity Cherenkov difference-frequency generation in dual-wavelength mid-infrared quantum cascade lasers are currently the only monolithic semiconductor laser technology that can deliver continuous-wave coherent terahertz output at room temperature. Because the Cherenkov difference-frequency generation process enables terahertz radiation generation and extraction across a wide range of frequencies, it is often assumed that phase-matching conditions for this process are automatically fulfilled. We theoretically analyze and experimentally demonstrate that phase-matching plays an important role in these devices, and significant improvements in terahertz power output can be achieved by adjusting the waveguide configuration of the quantum cascade lasers to provide better phase-matching. [ABSTRACT FROM AUTHOR]

Orientation-patterned gallium phosphide (OP-GaP) has been grown heteroepitaxially on OP gallium arsenide (GaAs) templates using hydride vapor phase epitaxy (HVPE). The effect of OP-GaAs template fabrication methods of epitaxial-inversion and wafer bonding on the heteroepitaxial OP-GaP growth has been investigated. OP-GaP layers with a growth rate of up to 35 µm/h and excellent domain fidelity were obtained. The growth rate and the domain fidelity have been revealed/studied by scanning electron microscope (SEM). In addition, we demonstrate that the crystalline quality of the individual domains, namely, the substrate-oriented domains (ODs) and the inverted domains (IDs), can be investigated by high-resolution x-ray diffraction reciprocal space mapping (HRXRDRSM), which can also indicate the domain fidelity. Attempts to increase the growth rate and improve the domain fidelity by increasing the III and V group precursors resulted in either an increase in the growth rate in the OP-GaP layers grown on epitaxial inversion OP-GaAs template at the expense of the domain crystalline quality and fidelity or an improvement in the crystalline quality of the domains at the expense of the growth rate in the OP-GaP layers grown on wafer-bonded OP-GaAs templates. In the case of OP-GaP grown on OP-GaAs templates prepared by epitaxial inversion, the crystalline quality of the ODs is better than that of the IDs, but it shows that the quality of the inverted layer in the template influences the quality and fidelity of the grown domains. To the authors' knowledge, exploitation of HRXRDRSM studies on OP-GaP to establish the crystalline quality of its individual domains (ODs and IDs) is the first of its kind. OP-ZnSe grown on OP-GaAs templates has also been included in this study to further emphasize the potential of this method. We propose from this study that once the growth rate is optimized from SEM studies, HRXRDRSM analysis alone can be used to assess the structural quality and to infer the domain fidelity of the OP structures. [ABSTRACT FROM AUTHOR]

We present a reverse-taper quantum cascade laser (QCL) emitting at 4.6 μm, a novel-geometry device that can scale the output power while maintaining good beam quality. Buried-ridge waveguides with tapered and straight regions were formed by ICP etching and HVPE regrowth – the tapered region scales the output power, while the emitting facet is located at the narrow-end taper section, which provides mode filtering by suppressing high-order spatial modes. Beam profiles were observed under quasi-continuous-wave (QCW)/CW operation and beam quality (M2) measurements along with beam-stability measurements were performed – a small degree of collimated-beam centroid movement (<0.46 mrad, peak-to-peak) was observed, along with M2 values close to 1 up to ∼1 W QCW power. Devices of shorter cavity lengths were also investigated, indicating that the output power scales with the core-region volume but results in a small increase in angular deviation. [ABSTRACT FROM AUTHOR]