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Photoluminescence of Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y] (0.08 < x < 0.22) epilayers lattice-matched to InAs substrate was investigated for the first time at 80 K, and the band gap of solid solutions was evaluated experimentally. It was demonstrated that the intensity of the band-to-band radiative recombination for p-GaInAsSb undoped layers depends on the composition of the quaternary solid solution and is governed by the concentration of intrinsic structural defects. For an n-GaInAsSb:Te donor-doped layer, the band-to-band recombination band and an additional emission band were observed. The latter band is related to the radiative recombination via the deep acceptor level formed by an intrinsic complex V[sub Ga]Te with the activation energy E[sub DA] = 122 meV. [ABSTRACT FROM AUTHOR]

High-quality type II Ga[sub 0.83]In[sub 0.17]As[sub 0.22]Sb[sub 0.78]/InAs heterostructures based on GaSb-rich quaternary solid solutions were grown by liquid phase epitaxy on InAs(001) substrates. GaInAsSb epilayers were grown under planar two-dimensional growth conditions with abrupt and planar interfaces. The thickness of the transition layer on the Ga[sub 0.83]In[sub 0.17]As[sub 0.22]Sb[sub 0.78]/InAs interface enriched with In and Sb was 10-12 Å in perfect structures. The roughness of the upper boundary was entirely determined by the epitaxial-growth conditions and did not exceed 500 Å in structures with a layer thickness of about 2 µm. [ABSTRACT FROM AUTHOR]

Uniform arrays of the InSb quantum dots with a surface density of nQD = 2 × 109 cm–2 were obtained by liquid phase epitaxy on a matrix layer based on a multicomponent InGaAsSb solid solution lattice-matched with the GaSb substrate. The change in the composition of the cationic part of the matrix by using the epitaxial matrix layer allowed to lower the temperature of the epitaxy to T = 430°C and determined the shape of a typical InSb quantum dot in the form of a truncated cone with average values of height h = 3 nm and diameter d = 30 nm, which corresponded to the aspect ratio L = h/d = 0.1. [ABSTRACT FROM AUTHOR]

Epitaxial layers of phosphorus-rich InAs[sub 1-y-x]Sb[sub y]P[sub x] solid solutions were obtained by liquid phase epitaxy (LPE). The films with x = 0.32 were grown at 575°C on isoperiodic (100)InAs substrates. It is shown that the growth of InAsSbP layers from a phosphorus-rich liquid phase is accompanied by saturation of the phosphorus content in the solid state. InAsSbP-based diode heterostructures emitting in the 2.6-2.8 µm wavelength range were obtained, the output emission power of which is sufficient for detecting both natural and industrial gases in the atmosphere. [ABSTRACT FROM AUTHOR]

Galvanomagnetic phenomena and photoconductivity in broken-gap type-II GaInAsSb/p-InAs heterojunctions with different levels of doping of the solid solution with donor (Te) or acceptor (Zn) impurities have been investigated. It has been determined that in such structures an electronic channel, which determines the galvanomagnetic effects in a wide range of doping levels, is present at the heterojunction. A sharp decrease of the Hall mobility was observed in the experimental heterostructures with a high level of doping of the epitaxial layer with an acceptor impurity. The observed effect is due to exhaustion of the electronic channel as a result of carrier localization in potential wells at the heterojunction. [ABSTRACT FROM AUTHOR]

The diagrams of melt-solid solution (fusibility curves) and solid solution (I)-solid solution (II) (surfaces of spinodal decomposition of solid solutions) phase equilibria in the fivecomponent system In-Ga-As-Sb-P (the solid solutions are isoperiodic to the GaSb and InAs substrates) are calculated. The concentration ranges of the isovalent substitution solid solutions In[sub x]Ga[sub 1-x]As[sub y]Sb[sub z]P[sub 1 - y - z], which are accessible for synthesis by liquid-phase epitaxy, are calculated. [ABSTRACT FROM AUTHOR]