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This overview is devoted to the discovery, development of the technology, and investigation of III–V semiconductors performed at the Ioffe Institute, where the first steps in fabricating III–V semiconductors were taken in 1950 and investigations into their fundamental properties were begun under the leadership of two outstanding scientists—Nina Aleksandrovna Goryunova and Dmitry Nikolayevich Nasledov. Further development of these investigations is reflected in the works of followers and pupils of D.N. Nasledov, who have worked and continue to work at subsidiaries of the Ioffe Institute. The contribution of these investigations to studying heterostructures based on III–V compounds as well as to the development of semiconductor devices for electronics, optoelectronics, and photonics is considered. [ABSTRACT FROM AUTHOR]

Arrays of coherent InSb quantum dots (QDs) have been fabricated by liquid-phase epitaxy on InAs substrates in the temperature range T = 420–450°C. The QDs with a density of (0.9−2) × 1010 cm−2 were 3 nm high and 13 nm in diameter. A bimodal QD size distribution was observed, which was accounted for by a combined growth mechanism of these nanoobjects. Structural characteristics of a separate InSb QD formed on the InAs surface were studied for the first time by atomic-force and transmission electron microscopies. Moire fringes were observed for the first time for QDs in the InSb/InAs system, with the moire period of 3.5 nm corresponding to InSb QDs without an admixture of arsenic. [ABSTRACT FROM AUTHOR]

Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/ p-GaSb type II heterostructures with deep quantum wells at the heterointerface are studied. The heterostructures were grown by metalorganic vapor phase epitaxy. Intense positive and negative luminescence was observed in the range of photon energies of 0.3–0.4 eV with a forward and reverse bias, respectively. Dependences of the spectra and intensities for positive and negative luminescence on the pumping current and on the temperature are studied in the range of 77–380 K. It is established that, at a temperature higher than 75°C, intensity of negative luminescence surpasses that of positive luminescence by 60%. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3–4 μm. [ABSTRACT FROM AUTHOR]

The electrical properties of epitaxial InAs and solid solutions based on it (InGaAsSb, InAsSbP, InAsGa, InAsP) have been investigated. It is shown that intentionally undoped crystals have n-type conductivity, which is determined by shallow donor impurities (E[sub 1] = 0.002-0.003 eV) and structural defects (E[sub 2] = 0.02-0.03 eV and E[sub 3] = 0.09-0.10 eV). It is shown that growth of epitaxial InAs using the neutral solvent Pb and also rare-earth elements makes it possible to reduce the electron density by almost an order of magnitude (to levels as low as 3 × 10[sup 15] cm[sup -3]) due to due to a decrease in the density of structural defects. [ABSTRACT FROM AUTHOR]

Magnetotransport properties of an electron channel at the heteroboundary in type II separated p-Ga[sub 1 - x]In[sub x]As[sub y]Sb[sub 1 - y]/p-InAs heterostructures grown by LPE (x = 0.09-0.22) were studied in the temperature range of 77-300 K. It is shown that an electron channel, which is formed at the heteroboundary and has high mobility µ = (3-5) x 10[sup 4] cm² V[sup -1] s[sup -1], exists throughout the whole composition range. The band diagram of the heterostructures under study is discussed, and some parameters of the electron channel are evaluated. It is found that the electron channel with high mobility persists up to room temperature. Type II GalnAsSb/p-InAs heterostructures can find application in new Hall sensor devices with an electron channel at the heteroboundary. [ABSTRACT FROM AUTHOR]