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The features of nanodomain growth during local switching in X-cut lithium niobate on insulator (LNOI) were comprehensively studied using the biased tip of a scanning probe microscope. The obtained results were discussed in terms of the kinetic approach. The revealed differences in domain growth in bulk LN and LNOI were attributed to the higher bulk conductivity of LNOI. The obtained influence of humidity on the shape and growth of isolated domains was attributed to the water meniscus. Analysis of the transition between the "forward growth" and "sideways growth" stages was performed by switching to the stripe electrode. A sand-glass-shaped domain was formed due to growth in the opposite direction after the domain touched the electrode. Stable periodical domain structures down to 300 nm were created and characterized in LNOI. Highly ordered comb-like domains of various alternating lengths, including four- and eight-fold increase periods, were produced by performing biased tip scanning along the Y axis. The obtained knowledge is important for the future development of nanodomain engineering methods in monocrystalline ferroelectric thin films on insulators. [ABSTRACT FROM AUTHOR]

Formation of the domain structure by ion beam irradiation was studied in thermally depolarized Ce-doped strontium barium niobate single crystals covered by a dielectric layer. Three types of irradiation regimes were used: dot exposure, stripe exposure, and line exposure. The dependences of the domain size and depth on the irradiated dose were measured. The circular shape of the isolated domains with partially switched broad domain boundary was obtained. Isotropic domain growth was attributed to the step generation at the wall by merging with the residual nanodomains that appeared after thermal depolarization. The obtained linear dose dependence of the switched area was attributed to the screening of the depolarization field by the injected charge. The shape distortion of the domains growing in the neighborhood with already created ones was attributed to the electrostatic interaction of the approaching charged domain walls. The obtained results can be applied for the creation of precise domain patterns with arbitrary orientation and shape to produce nonlinear optical devices with improved characteristics, including electrically tunable diffractive optical elements. [ABSTRACT FROM AUTHOR]