1. Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys
- Author
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Yuttapoom Puttisong, Henning Riechert, Weimin Chen, Aaron J. Ptak, Irina Buyanova, Lutz Geelhaar, and Charles W. Tu
- Subjects
Materials science ,Gallium ,Indium ,Arsenicals ,Condensed Matter::Materials Science ,Materials Testing ,Alloys ,General Materials Science ,Spin (physics) ,Computer Science::Distributed, Parallel, and Cluster Computing ,Amplifiers, Electronic ,Spintronics ,Condensed matter physics ,business.industry ,Mechanical Engineering ,Amplifier ,Temperature ,spin amplifiers ,spintronics ,room temperature ,defects ,semiconductors ,Equipment Design ,Condensed Matter Physics ,Equipment Failure Analysis ,Semiconductor ,Semiconductors ,Mechanics of Materials ,Optoelectronics ,Spin Labels ,Condensed Matter::Strongly Correlated Electrons ,business ,Den kondenserade materiens fysik - Abstract
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency up to 1 GHz.
- Published
- 2012
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