1. A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides
- Author
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Dominique Vuillaume, F. Mondon, P. Candelier, A. Meinertzhagen, Didier Goguenheim, Alain Bravaix, M. Jourdain, ISEN Toulon, Institut supérieur de l'électronique et du numérique (ISEN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
- Subjects
Analytical chemistry ,Oxide ,02 engineering and technology ,01 natural sciences ,law.invention ,[SPI]Engineering Sciences [physics] ,chemistry.chemical_compound ,law ,0103 physical sciences ,Electrical and Electronic Engineering ,Interface traps ,Quantum tunnelling ,Leakage (electronics) ,010302 applied physics ,Chemistry ,N-MOSFET ,Stress induced ,Hole injection ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,SILC ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Capacitor ,Field-effect transistor ,Charge-pumping ,0210 nano-technology ,Order of magnitude ,Trapped charge - Abstract
International audience; Stress Induced Leakage Currents (SILC) are studied in 5 nm-thick oxides on both capacitors and N-MOSFET's after homogeneous FOWLER-NORDHEIM injections under high field stress (
- Published
- 1997
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