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This paper reports on a CMOS fully integrated optoelectronic sensing system composed of a Si photodiode and a transimpedance amplifier acting as the electronic analog front-end for the conditioning of the photocurrent generated by the photodiode. The proposed device has been specifically designed and fabricated for wearable/portable/implantable biomedical applications. The massive employment of sensor systems in different industrial and medical fields requires the development of small sensing devices that, together with suitable electronic analog front ends, must be designed to be integrated into proper standard CMOS technologies. Concerning biomedical applications, these devices must be as small as possible, making them non-invasive, comfortable tools for patients and operating with a reduced supply voltage and power consumption. In this sense, optoelectronic solutions composed of a semiconductor light source and a photodiode fulfill these requirements while also ensuring high compatibility with biological tissues. The reported optoelectronic sensing system is implemented and fabricated in TSMC 180 nm integrated CMOS technology and combines a Si photodiode based on a PNP junction with a Si area of 0.01 mm2 and a transimpedance amplifier designed at a transistor level requiring a Si area of 0.002 mm2 capable to manage up to nanoampere input currents generated by the photodiode. The transimpedance amplifier is powered at a 1.8 V single supply showing a maximum power consumption of about 54 μW, providing a high transimpedance gain that is tunable up to 123 dBΩ with an associated bandwidth of about 500 kHz. The paper reports on both the working principle of the developed ASIC and the experimental measurements for its full electrical and optoelectronic characterizations. Moreover, as case-examples of biomedical applications, the proposed integrated sensing system has also been validated through the optical detection of emulated standard electrocardiography and photoplethysmography signal patterns.