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Brain-inspired neuromorphic computing systems with the potential to drive the next wave of artificial intelligence demand a spectrum of critical components beyond simple characteristics. An emerging research trend is to achieve advanced functions with ultracompact neuromorphic devices. In this work, a single-transistor neuron is demonstrated that implements excitatory-inhibitory (E-I) spatiotemporal integration and a series of essential neuron behaviors. Neuronal oscillations, the fundamental mode of neuronal communication, that construct high-dimensional population code to achieve efficient computing in the brain, can also be demonstrated by the neuron transistors. The highly scalable E-I neuron can be the basic building block for implementing core neuronal circuit motifs and large-scale architectural plans to replicate energy-efficient neural computations, forming the foundation of future integrated neuromorphic systems.

The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge transport effects at the 2D-3D ohmic contact coupled with the thermionic injection model for graphene/Si Schottky junction. Here, w e focus on the intrinsic properties of graphene-metal contacts, paying particular attention to the nature of the contact failure mechanism under high electrical stress. According to our findings, severe current crowding (CC) effects in highly conductive electrical contact significantly affect device failure that can be reduced by spatially varying the contact properties and geometry. The impact of electrical breakdown on material degradation is systematically analyzed by atomic force, Raman, scanning electron, and energy dispersive X-ray spectroscopies. Our devices withstand high electrostatic discharge spikes over a longer period, manifesting high robustness and operational stability. This research paves the way towards a highly robust and reliable graphene/Si heterostructure in futuristic on-chip integration in dynamic switching. The methods we employed here can be extended for other nanoscale electronic devices based on 2D-3D interfaces

A new charge measurement method, time over threshold (TOT), has been used in some gas detectors lately. Here TOT is studied for TOF system, made of plastic scintillator counter, which can simplify the electronics of the system. The signal characteristics are measured and analyzed with a high quality oscilloscope, including noise, pedestal, signal amplitude, total charge, rise time and the correlation between them. The TOT and charge are related and can be fitted by some empirical formula. The charge measurement resolution by TOT is given and this will help the design of TOF electronics.

The radiation damage characteristics of three types of plastic scintillators, BC-408, EJ-200 and BC-404, are experimentally studied. The results show that after irradiation, the light yield and light transmission of these scintillators decrease and the shapes of the excitation and emission spectra remain unchanged. Recovery of light yield is not observed after weak irradiation.