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Bonding interface of SOI structure may be an effective sink for impurity atoms because of higher concentration of vacancies and microvoids on the cleavage planes. The behaviour of ion-implanted Sb and In atoms near the bonding interface of SOI structures was investigated as a function of annealing temperature.

Cu is especially suitable to decorate defects in silicon. The Cu decoration technique has been applied for the detection of point defect clusters in the RP/2 region of Si+ ion implanted silicon. The results of this technique are compared with the results obtained by other analysis techniques. Nanocavities at RP/2 could be observed only in cross section transmission electron microscopy specimen prepared by cleavage technique. These nanocavities are probably the dominant gettering centres for Cu at RP/2. Small interstitial clusters may exist there as well. The conditions for the formation and for the annealing of the gettering layer at RP/2 have been determined. Impurity gettering at RP/2 can be prevented by a sequence of additional Si+ implantations to balance implantation-induced excess vacancies which are the origin of the nanocavities.