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32 results on '"THALES [France]-ALCATEL"'

1. Integrated lasers on silicon for optical communications

Author

Manel Ramirez, Joan, Souleiman, Amin, Fanneau, Pierre, Besancon, Claire, Vaissiere, Nicolas, Neel, Delphine, Ramez, Valentin, Malhouitre, Stéphane, Hassan, Karim, Merghem, Kamel, Decobert, Jean, Bitauld, David, Nokia Bell Labs [Paris-Saclay], Institut Polytechnique de Paris (IP Paris), Département Electronique et Physique (TSP - EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Traitement de l'Information Pour Images et Communications (TIPIC-SAMOVAR), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)-Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thales III-V Lab (III-V Lab ), and THALES [France]

Subjects
[PHYS]Physics [physics], Silicon, Optical communications, Lasers
Abstract

We review our work on integrated lasers for optical communications. An InP-based multilayer stack containing Al-based quantum wells with optical gain in the telecom window is bonded onto a silicon-on-insulator wafer with patterned photonic circuits and cavities. Ring-based widely tunable lasers and narrow linewidth DFB lasers are demonstrated.

Published
2023

2. High speed mid-IR Quantum Cascade Detector at room temperature

Author

A. Evirgen, Stefano Barbieri, J-F. Lampin, M. Hakl, A. Delga, V. Trinite, G. Quinchard, A. Larrue, E. Peytavit, C. Mismer, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), THALES [France]-ALCATEL, and Photonique THz - IEMN (PHOTONIQUE THz - IEMN)

Subjects
Patch antenna, Heterodyne, Materials science, business.industry, Terahertz radiation, Detector, Astrophysics::Instrumentation and Methods for Astrophysics, Heterojunction, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, Cascade, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Antenna (radio), 0210 nano-technology, business, Coherence (physics)
Abstract

International audience; We present a high-speed antenna enhanced Quantum Cascade Detector at 10.3μm. By using a coherent detection scheme and thin InGaAs/AlInAs heterostructure embedded in metal-metal patch antenna, we demonstrate a heterodyne response up to 67 GHz at room temperature.

Published
2020

3. High speed, antenna-enhanced 10.3μm quantum cascade detector

Author

G. Quinchard, C. Mismer, M. Hakl, J. Pereira, Q. Lin, S. Lepillet, V. Trinité, A. Evirgen, E. Peytavit, J. L. Reverchon, J. F. Lampin, S. Barbieri, A. Delga, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), This work was partially supported by the French National Research Agency, and Direction Générale de l’Armement (project HISPANID), Nord-Pas de Calais Regional Council, Fonds Européens de Développement Régional, RENATECH (French Network of Major Technology Centres), and CPER 'Photonics for Society.', Renatech Network, PCMP CHOP, and ANR-17-ASTR-0008,Hispanid,Détecteur infrarouge hétérodyne haute fréquence(2017)

Subjects
Photovoltaics, Photonic materials, RC circuits, Physics and Astronomy (miscellaneous), Photoconductivity, Optical communications, Lasers, Photodetectors, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Infrared photodetector, Waveguides, Electronic band structure, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience; The strong potential of intersubband detectors in the field of mid-infrared photodetection places this technology as a relevant alternative to HgCdTe detectors in the race for ultrafast operation. While their extremely short photocarrier's lifetime opens up possibilities of detection beyond 100 GHz, it is also the main reason for their comparatively high dark current. Here, a photovoltaic quantum cascade detector at 10.3 μm, embedded in a metal–metal patch antenna is presented in both direct and heterodyne detection schemes. In DC, a responsivity of 122 mA/W at 77 K and 85 mA/W at 295 K is reached. More strikingly, the device shows temperature independent heterodyne response with a capacitance-limited cutoff frequency of 25 GHz both at 77 K and room temperature. It is modeled quantitatively by means of an equivalent RC-circuit picture stemming from microscopic transport considerations.

Published
2022

4. First space concentrator prototype using III-V/Si cells

Author

Olivier Raccurt, Christophe Jany, Philippe Voarino, Anderson Bermudez-Garcia, Karim Medjoubi, Romain Cariou, Laura Vauche, CEA Le Ripault (CEA Le Ripault), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Nexcis, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), ARC-Nucleart CEA Grenoble (NUCLEART), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), THALES-ALCATEL, Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials science, Silicon, business.industry, chemistry.chemical_element, Germanium, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, Space (mathematics), Concentrator, 01 natural sciences, 7. Clean energy, 0104 chemical sciences, law.invention, Lens (optics), [SPI]Engineering Sciences [physics], Electric power system, chemistry, Photovoltaics, law, Optoelectronics, 0210 nano-technology, business, Nonimaging optics, ComputingMilieux_MISCELLANEOUS
Abstract

Concentrating PhotoVoltaics (CPV) can increase the efficiency of power systems in space while reducing their cost. This paper presents the first concentrator prototype using III-V/Si cells for space applications. This new approach will significantly reduce cost by concentrating sunlight then decreasing cell material, and in particular using III-V/Si triple-junction (3J) cells will allow the usage of Silicon, which is an abundant, twice less dense and low-cost material than the typically used Germanium. The efficiency of III-V/Si solar cells used is 25.7% @AM0. In our refractive module design, Compound Parabolic Concentrator (CPC), twelve 1.5x13mm2 cells are embedded in a Dow Corning® 93-500 silicone optics that provides an ∼8x concentration factor with an optical efficiency of 68%. Additionally, this linear-focus lens enables the use of single-axis sun tracking.

Published
2019

5. Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Author

Claire Besancon, Laura Vauche, Alejandro Datas, Pablo Garcia-Linares, Philippe Voarino, Cecilia Dupre, Elias Veinberg-Vidal, Jean Decobert, Karim Medjoubi, Anne Kaminski-Cachopo, Clément Weick, Pierre Mur, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL

Subjects
Materials science, Wafer bonding, Energía Eléctrica, 02 engineering and technology, 010402 general chemistry, 7. Clean energy, 01 natural sciences, law.invention, law, Solar cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Optical filter, ComputingMilieux_MISCELLANEOUS, Common emitter, Tandem, Renewable Energy, Sustainability and the Environment, business.industry, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Suns in alchemy, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Energías Renovables, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Electrónica, Solar simulator, 0210 nano-technology, business
Abstract

Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga₀.₅In₀.₅P emitter and a p‐Al₀.₂Ga₀.₈As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which to our knowledge is the best dual‐junction two‐terminal III‐V on Si tandem cell efficiency reported to date under verified reference conditions. The I‐V characterization of these 1‐cm² tandem cells under concentration required the development of a new method using a single‐source multiflash solar simulator and not perfectly matched component cells, also known as pseudo‐isotypes, formed by Si single‐junction cells and optical filters. In addition, the spectrum of the pulsed solar simulator was measured using a high‐speed CMOS spectrometer, allowing the calculation of the spectral mismatch correction factor. Merging these two techniques results in the hybrid corrected pseudo‐isotype (HCPI) characterization method, which shows a fast and accurate performance with a simplified procedure based on a single‐source solar simulator. Pseudo‐isotypes are easily adaptable to new cell designs by simply using a different filter, hence allowing the characterization of new multijunction solar cell architectures.

Published
2019

6. A 5G mmWave Fiber-Wireless IFoF Analog Mobile Fronthaul Link With up to 24-Gb/s Multiband Wireless Capacity

Author

G. Giannoulis, Nikos Pleros, Helene Debregeas, Dimitrios Apostolopoulos, S. Papaioannou, Christos Vagionas, Konstantina Kanta, Hercules Avramopoulos, N. Argyris, George Kalfas, Christophe Caillaud, Nikolaos Iliadis, National Technical University of Athens [Athens] (NTUA), Mellanox Technologies [Sunnyvale], Aristotle University of Thessaloniki, Alcatel-Thales III-V Lab (III-V Lab), THALES, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, European Commission [761989], THALES [France], and THALES [France]-ALCATEL

Subjects
indoor measurements, business.industry, Computer science, Analog radio-over-fiber, Subcarrier multiplexing, Transmitter, 020206 networking & telecommunications, externally modulated laser, 02 engineering and technology, Remote radio head, Multiplexing, Atomic and Molecular Physics, and Optics, Subcarrier, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, M-QAM, Telecommunications link, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Baseband, digital subcarrier multiplexing, Wireless, business, mobile fronthaul, millimeter wave radio
Abstract

International audience; We experimentally demonstrate a multiband intermediate frequency-over-fiber/mmWave (IFoF/mmWave) fiber/wireless mobile fronthaul link for gigabit capacity over the unlicensed V-band (57-64 GHz). Digital synthesis of the multiband radio waveforms is performed at the baseband unit using digital subcarrier multiplexing technique, whereas digital predistortion is exploited to cope with the analog IFoF channel impairments without any further baseband processing at the digital-free remote radio head. Commercial optoelectronic components and analog V-band radio and antenna equipment for 7-km fiber and 5-m wireless transmission are employed to successfully demonstrate both uplink and downlink connectivity. An aggregate capacity up to 24 Gb/s was demonstrated with a 6-band 1 Gbaud 16-QAM on a 7.2-GHz analog bandwidth over the combined fiber/wireless channel showing error vector magnitude (EVM) values below the 3GPP requirements (

Published
2019
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7. Performance Analysis of AlxGa1-xAs/epi-Si(Ge) Tandem Solar Cells: A Simulation Study

Author

Martin Foldyna, José Alvarez, Romain Cariou, P. Roca i Cabarrocas, Gwenaëlle Hamon, Jean-Paul Kleider, Jean Decobert, Raphaël Lachaume, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), and THALES-ALCATEL

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Quantum dot solar cell, Epitaxy, 7. Clean energy, 01 natural sciences, Polymer solar cell, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, Optics, Energy(all), law, Plasma-enhanced chemical vapor deposition, 0103 physical sciences, Solar cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, silicon on III-V, 010302 applied physics, Tandem, business.industry, III-V on silicon, modeling, simulation, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, Optoelectronics, tandem solar cells, 0210 nano-technology, business
Abstract

International audience; A new strategy for the development of III-V/Si tandem solar cells has recently been proposed consisting in low temperature PECVD epitaxy of silicon or silicon-germanium on gallium-arsenide. This paper thus gives first insights about theoretical but realistic maximum performance of such tandem cells by means of full numerical simulations considering perfect layers and interfaces. The consequences of using a thin epi-Si bottom cell instead of a thick silicon substrate are investigated. In case no light trapping scheme is considered, a minimum epi-layer thickness of 20 μm is mandatory for the tandem to exhibit higher conversion efficiencies than a single GaAs solar cell. The epi-Si can yet be advantageously replaced by an epitaxial silicon-germanium alloy to increase the bottom cell optical absorption and thus decrease the minimum required thickness by a factor of ∼4 (∼5 μm). Finally, simulations show that over 33% efficiency can be obtained for AlxGa1-xAs/epi-Si0.63Ge0.27, which confirms that this is a promising new concept.

Published
2015
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8. InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Author

Alexandre Larrue, Stefano Soresi, Gwenaëlle Hamon, José Alvarez, Jean Decobert, Mauricio P. Pires, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Total S.A. Renewables, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Instituto de Física da Universidade Federal do Rio de Janeiro (IF / UFRJ), Universidade Federal do Rio de Janeiro (UFRJ), THALES [France]-ALCATEL, Alcatel-Thalès III-V lab ( III-V Lab ), Laboratoire Génie électrique et électronique de Paris ( GeePs ), Centre National de la Recherche Scientifique ( CNRS ) -CentraleSupélec-Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Université Paris-Sud - Paris 11 ( UP11 ), Instituto de Fisica, UFRJ ( IFUFRJ ), and Universidade Federal do Rio de Janeiro [Rio de Janeiro] ( UFRJ )

Subjects
Materials science, Band gap, [ SPI.MAT ] Engineering Sciences [physics]/Materials, 02 engineering and technology, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [ SPI.NRJ ] Engineering Sciences [physics]/Electric power, Tunnel junction, 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum tunnelling, 010302 applied physics, business.industry, Photovoltaic system, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Heterojunction, Surfaces and Interfaces, Semiconductor device, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [ SPI.TRON ] Engineering Sciences [physics]/Electronics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business, Current density
Abstract

International audience; Multijunction solar cells based on III–V compounds are one of the most effective possibilities to achieve high efficiencies for space and terrestrial applications. In this work, AlInAs:C/InP:S tunnel junctions are fabricated using MOVPE. Type‐II interface band alignment of AlInAs/InP heterostructure is ideal for increasing the photogenerated carriers tunneling. Furthermore, wide bandgaps ensure a high transmission of the incident light. The J–V characteristics of the final devices show very good results in terms of tunneling peak current density (1000 A cm−2) and specific resistance at low applied bias, making them compatible for photovoltaic applications.

Published
2018
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9. Evolutionary history and global spread of the Mycobacterium tuberculosis Beijing lineage

Author

Sabine Rüsch-Gerdes, Hans P eter Beck, Vladyslav Nikolayevskyy, Irina Kontsevaya, Petras Stakenas, Kadri Toit, Shinji Maeda, Eman Aleksic, Marie Ballif, Stefano Mona, Troels Lillebaek, Maryline Bonnet, Caroline Allix-Béguec, Sophie Lecher, Robin M. Warren, Isdore Chola Shamputa, Francesca Barletta, Isolina Campos-Herrero, Wei wei Jiao, Thomas Kohl, Suzanne M. Crowe, Ewa Augustynowicz-Kopeć, Solomon Ghebremichael, Branislava Savic, Francis Varaine, Dragana Vuković, Camille Blin, Annick Antierens, Li Hwei Sng, Maryse Fauville-Dufaux, Céline Wahl, Thierry Wirth, Stefan Niemann, Eve Willery, Helen Cox, Valeriu Crudu, Emanuele Borroni, Sebastien Gagneux, Philip Supply, Sven Hoffner, Adong Shen, Stobdan Kalon, Michael Rasmussen, Francis Drobniewski, Igor Mokrousov, Michael G. B. Blum, Madeleine Hanekom, Sofía Samper, Matthias Merker, Clifton E. Barry, Nicolas Duforet-Frebourg, Roland Diel, Nalin Rastogi, Daniela Maria Cirillo, Elisabeth Sanchez-Padilla, Molecular Mycobacteriology, Research Center Borstel - Leibniz Lung Center [Germany], Institut de Systématique, Evolution, Biodiversité (ISYEB ), Muséum national d'Histoire naturelle (MNHN)-Université Pierre et Marie Curie - Paris 6 (UPMC)-École Pratique des Hautes Études (EPHE), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Biologie Intégrative des Population, Evolution Moléculaire, École Pratique des Hautes Études (EPHE), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), Biologie Computationnelle et Mathématique (TIMC-IMAG-BCM), Techniques de l'Ingénierie Médicale et de la Complexité - Informatique, Mathématiques et Applications, Grenoble - UMR 5525 (TIMC-IMAG), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-VetAgro Sup - Institut national d'enseignement supérieur et de recherche en alimentation, santé animale, sciences agronomiques et de l'environnement (VAS)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-VetAgro Sup - Institut national d'enseignement supérieur et de recherche en alimentation, santé animale, sciences agronomiques et de l'environnement (VAS)-Centre National de la Recherche Scientifique (CNRS), Centre d’Infection et d’Immunité de Lille - INSERM U 1019 - UMR 9017 - UMR 8204 (CIIL), Institut Pasteur de Lille, Réseau International des Instituts Pasteur (RIIP)-Réseau International des Instituts Pasteur (RIIP)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Lille-Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille)-Centre National de la Recherche Scientifique (CNRS), National Reference Center for Mycobacteria, Institut Pasteur de Saint-Pétersbourg, Réseau International des Instituts Pasteur (RIIP), Centre for Biomedical Research, Burnet Institute [Melbourne, Victoria], genoscreen, GenoScreen, Medical Department, Médecins sans Frontières [Genève] (MSF), Department of Microbiology, National Tuberculosis and Lung Diseases Research Institute, Institute of Social and Preventive Medicine, Universität Bern [Bern] (UNIBE), Instituto de Medicina Tropical Alexander von Humboldt, Molecular Epidemiology Unit–Tuberculosis, Instituto de Medicina Tropical 'Alexander von Humboldt' (IMT AvH), Universidad Peruana Cayetano Heredia (UPCH)-Universidad Peruana Cayetano Heredia (UPCH), Medical Parasitology and Infection Biology [Basel, Suisse] (MPI), Swiss Tropical and Public Health Institute [Basel], Laboratoire de Recherche en Informatique d'Amiens (LaRIA), Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS), Epicentre [Paris] [Médecins Sans Frontières], Emerging Bacterial Pathogen Unit, San Raffaele Scientific Institute, hospital Universitario de Gran Canaria Dr Negrin, Macfarlane Burnet Institute for Medical Research, Laboratoire Jean Alexandre Dieudonné (LJAD), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), PHE National Mycobacterial Reference Laboratory and Clinical TB and HIV Group, Queen Mary's School of Medicine and Dentistry, Division of Infectious Diseases, Imperial College London, Centre national de Référence et Laboratoire Tuberculose et Mycobactéries = National Reference Centre of Tuberculosis and Mycobacteria [Brussels] (CNR), Institut Scientifique de Santé Publique [Belgique] - Scientific Institute of Public Health [Belgium] (WIV-ISP), Réseau International des Instituts Pasteur (RIIP)-Réseau International des Instituts Pasteur (RIIP), MRC National Institute for Medical Research, Department of Preparedness, Swedish Institute for Infectious Disease Control, Faculty of Medicine and Health Sciences, stellen, Key Laboratory of Major Diseases in Children, Beijing Children's Hospital affiliated to Capital Medical University-Beijing Pediatric Research Institute-Chine - Ministry of Education, Samara Oblast TB Service, Research institute of Tuberculosis, Anti-tuberculosis Association, Institut Pasteur de la Guadeloupe, LAboratoire de Recherche en Mécanique Appliquée (LARMAUR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Mycobacteriology Unit, Prince Leopold Institute of Tropical Medicine, Microbiology Unit, Tropical Diseases Research Centre [Zambia] (TDRC), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Central Tuberculosis Laboratory, Singapore General Hospital, Medecins Sans Frontieres (Medecins Sans Frontieres), Médecins Sans Frontières, DTU Fotonik - Department of Photonics Engineering, Danmarks Tekniske Universitet = Technical University of Denmark (DTU), molecular biology and human genetics, Stell, Molecular Mycobacteriology Group, National Reference Center for Mycobacyeria, Origine, structure et évolution de la biodiversité (OSEB), Muséum national d'Histoire naturelle (MNHN)-Centre National de la Recherche Scientifique (CNRS), We acknowledge J. Peh for her assistance and support in the study andI. Comas for statistical advice. Parts of this work have been supported by grantsfrom the European Community’s Seventh Framework Programme (FP7/2007-2013) under grant agreement 278864 in the framework of the European UnionPathoNGenTrace project and grant agreement 223681 in the framework of theTB-PAN-NET project. We also thank Action Transversale du Muséum Nationald’Histoire Naturelle ‘Les Microorganismes, Acteurs Clés dans les Ecosystèmes’for financial support, European Project: 223681,EC:FP7:HEALTH,FP7-HEALTH-2007-B,TB PAN-NET(2009), European Project: 278864,FP7/2007- 2013, Muséum national d'Histoire naturelle (MNHN)-École pratique des hautes études (EPHE), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), École pratique des hautes études (EPHE), VetAgro Sup - Institut national d'enseignement supérieur et de recherche en alimentation, santé animale, sciences agronomiques et de l'environnement (VAS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-VetAgro Sup - Institut national d'enseignement supérieur et de recherche en alimentation, santé animale, sciences agronomiques et de l'environnement (VAS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Centre National de la Recherche Scientifique (CNRS)-Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille)-Université de Lille-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut Pasteur de Lille, Universität Bern [Bern], Laboratoire Jean Alexandre Dieudonné (JAD), Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), THALES-ALCATEL, and Technical University of Denmark [Lyngby] (DTU)

Subjects
Tuberculosis, Lineage (genetic), MESH: Mutation, MESH: Mycobacterium tuberculosis, Genotype, MESH: Biological Evolution, MESH: Global Health, Biology, MESH: Genome, Bacterial, Global Health, Genetic analysis, Mycobacterium tuberculosis, MESH: Genotype, Evolution, Molecular, Phylogenetics, Tuberculosis, Multidrug-Resistant, Genetics, Global health, medicine, Humans, MESH: Phylogeny, MESH: Evolution, Molecular, MESH: Tuberculosis, Multidrug-Resistant, Phylogeny, MESH: Humans, Ecology, Population size, medicine.disease, biology.organism_classification, [SDV.MP.BAC]Life Sciences [q-bio]/Microbiology and Parasitology/Bacteriology, Biological Evolution, 3. Good health, Mycobacterium tuberculosis/classification/genetics/isolation & purification, Evolutionary biology, Mutation, [SDV.SPEE]Life Sciences [q-bio]/Santé publique et épidémiologie, Tuberculosis, Multidrug-Resistant/epidemiology/microbiology, Genome, Bacterial, purl.org/pe-repo/ocde/ford#1.06.07 [https]
Abstract

International audience; Mycobacterium tuberculosis strains of the Beijing lineage are globally distributed and are associated with the massive spread of multidrug-resistant (MDR) tuberculosis in Eurasia. Here we reconstructed the biogeographical structure and evolutionary history of this lineage by genetic analysis of 4,987 isolates from 99 countries and whole-genome sequencing of 110 representative isolates. We show that this lineage initially originated in the Far East, from where it radiated worldwide in several waves. We detected successive increases in population size for this pathogen over the last 200 years, practically coinciding with the Industrial Revolution, the First World War and HIV epidemics. Two MDR clones of this lineage started to spread throughout central Asia and Russia concomitantly with the collapse of the public health system in the former Soviet Union. Mutations identified in genes putatively under positive selection and associated with virulence might have favored the expansion of the most successful branches of the lineage.

Published
2015
Full Text
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10. Inverse Metamorphic III-V/epi-SiGe Tandem Solar Cell Performance Assessed by Optical and Electrical Modeling

Author

Pere Roca i Cabarrocas, Raphael Lachaurne, Jean Decobert, Gwenaëlle Hamon, Jean-Paul Kleider, Romain Cariou, Nicolas Vaissiere, José Alvarez, Martin Foldyna, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Silicon, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 020209 energy, chemistry.chemical_element, Inverse, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, Grating, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, Sputtering, 0202 electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Tandem, Computer simulation, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 021001 nanoscience & nanotechnology, Microstructure, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, [SPI.NRJ] Engineering Sciences [physics]/Electric power, Tandem solar cell
Abstract

Recent developments have unlocked the main issues arising from the combination of III-V and silicon and have opened a new way to fabricate tandem solar cells. We here propose to evaluate such tandem concept based on inverse metamorphic growth of c-Si(Ge) on GaAs by means of numerical simulation. Electrical and optical models are first faced to experimental realizations of single junction cells to calibrate material parameters and to assess the electrical quality of the epi-SiGe layer. Then the tandem structure is optimized, current matching conditions are given and the benefit of using a 2D grating at the back-side is studied.

Published
2017

11. Quantum dash based directly modulated lasers for long‐reach access networks

Author

Jean-Guy Provost, Luiz Anet Neto, Abderahim Ramdane, Florent Franchin, Alain Accard, Francois Lelarge, Siddharth Joshi, Nicolas Chimot, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), ANR-11-INFR-0003,DIQDOT,Transmetteur à forte tolérance à la dispersion chromatique pour réseaux d'accès de prochaine génération(2011), THALES [France]-ALCATEL, Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Extinction ratio, business.industry, Single-mode optical fiber, Physics::Optics, Biasing, 02 engineering and technology, Laser, 01 natural sciences, law.invention, 010309 optics, 020210 optoelectronics & photonics, Optics, Transmission (telecommunications), Filter (video), law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Optical filter, business, Fabry–Pérot interferometer
Abstract

International audience; We demonstrate an innovative 10 Gbps single mode optical transmitter with the capacity of error free transmission in the range of 0 to 100kms with constant biasing conditions using a Quantum Dash Directly Modulated Laser. We use a commercially available etalon filter as passive optical filter to achieve penalty free transmission with a dynamic extinction ratio (DER) > 6dB over a large range of fiber spans.

Published
2014

12. InP double heterojunction bipolar transistors for terahertz computed tomography

Author

Olivier Strauss, Alexandre Duhant, Muriel Riet, Wojciech Knap, Nina Dyakonova, Meriam Triki, Virginie Nodjiadjim, Agnieszka Konczykowska, Dominique Coquillat, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Terakalis, Image & Interaction (ICAR), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), and THALES-ALCATEL

Subjects
External circuit, Materials science, Terahertz radiation, General Physics and Astronomy, Computed tomography, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Capacitance, [SPI.AUTO]Engineering Sciences [physics]/Automatic, law.invention, law, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, medicine, medicine.diagnostic_test, business.industry, Bipolar junction transistor, Transistor, 020206 networking & telecommunications, Heterojunction, 021001 nanoscience & nanotechnology, lcsh:QC1-999, Optoelectronics, 0210 nano-technology, business, lcsh:Physics, Voltage
Abstract

International audience; We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and current responsivities, showing importance of internal device parasitic capacitances and the external circuit loading effects. Finally, we demonstrate the use of these transistors for terahertz radiation computed tomography leading to 3D visualization of concealed objects. Our results pave the way towards wide use of heterojunction based transistors for terahertz imaging.

Published
2018

13. Transmission Quality Measurement of Two Types of 60 GHz Millimeter-Wave Generation and Distribution Systems

Author

Franck Mallecot, M. Goix, Fabrice Blache, A. Enard, Benoit Charbonnier, Hongwu Li, F. Lecoche, F. van Dijk, Eric Tanguy, Orange Labs [Lannion], France Télécom, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique EA4642 (IREENA), Institut Universitaire de Technologie Saint-Nazaire (IUT Saint-Nazaire), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Institut Universitaire de Technologie - La Roche-sur-Yon (IUT La Roche-sur-Yon), Université de Nantes (UN)-Université de Nantes (UN), Institut d'Électronique et des Technologies du numéRique (IETR), Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Tanguy, Eric, Institut de Recherche en Energie Electrique de Nantes Atlantique EA4642 (IREENA), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Engineering, Multi-mode optical fiber, business.industry, Optical link, Single-mode optical fiber, 02 engineering and technology, 01 natural sciences, [SPI.TRON] Engineering Sciences [physics]/Electronics, Atomic and Molecular Physics, and Optics, [SPI.TRON]Engineering Sciences [physics]/Electronics, 010309 optics, 020210 optoelectronics & photonics, Optics, Radio over fiber, Intermediate frequency, Modulation, Fiber laser, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, business, Radio wave
Abstract

International audience; In this paper, we demonstrate and compare experimentally two techniques achieving very high-data-rates (> 1 Gb/s) wireless transmission in the 60 GHz window using radio over fiber (RoF) for reach extension. The first RoF link is based on a 10 GHz vertical-cavity surface-emitting laser and uses a multimode fiber. The radio signal is transported on an intermediate frequency of 4.5 GHz and electrically upconverted to 60 GHz after the optical link. The second uses an optical frequency upconversion from 4.5 to 60 GHz by direct modulation of a mode-locked Fabry-PEacuterot laser whose self-pulsating frequency is 54.8 GHz before transmission over a single-mode fiber. For both techniques, two different types of modulation were tested. The first one was an on-off keying at 1.5 Gb/s and the second one was an orthogonal frequency-division multiplexing-QPSK signal compliant to the IEEE 802.15.3.c prestandard (3.03 Gb/s). Radio propagation performance is also reported.

Published
2009

14. Optoelectronic cross-injection locking of a dual-wavelength photonic integrated circuit for low-phase-noise millimeter-wave generation

Author

Marco Lamponi, Loic Morvan, Frederic van Dijk, Mehdi Alouini, Gregoire Pillet, Mourad Chtioui, Gael Kervella, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Thales Research and Technology [Palaiseau], THALES, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Thales Research and Technologies [Orsay] (TRT), THALES [France], Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL

Subjects
Materials science, distributed-feedback, Radio frequency photonics, Physics::Optics, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, Laser linewidth, 020210 optoelectronics & photonics, Optics, law, 0103 physical sciences, Phase noise, 0202 electrical engineering, electronic engineering, information engineering, [PHYS]Physics [physics], business.industry, Lasers, Photonic integrated circuit, Integrated optics, Laser, Atomic and Molecular Physics, and Optics, Photodiode, Injection locking, Heterodyne, Optoelectronics, Photonics, business, Phase modulation
Abstract

International audience; We report on the stabilization of a 90-GHz millimeter-wave signal generated from a fully integrated photonic circuit. The chip consists of two DFB single-mode lasers whose optical signals are combined on a fast photodiode to generate a largely tunable heterodyne beat note. We generate an optical comb from each laser with a microwave synthesizer, and by self-injecting the resulting signal, we mutually correlate the phase noise of each DFB and stabilize the beatnote on a multiple of the frequency delivered by the synthesizer. The performances achieved beat note linewidth below 30 Hz.

Published
2015

15. In situ generation of surface plasmon polaritons using a near-infrared laser diode

Author

Tiantian Zhang, Y. De Wilde, Francois Lelarge, D. Costantini, J. Decobert, Raffaele Colombelli, Azzedine Bousseksou, Ségolène Callard, R. Rungsawang, L. Greusard, G-H Duan, Laboratoire de chimie de coordination (LCC), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Pierre Aigrain (LPA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), OPTO+, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Lab Opt Phys, Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and THALES [France]-ALCATEL

Subjects
Materials science, Light, Infrared Rays, Bioengineering, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, Optics, law, 0103 physical sciences, Nanotechnology, Scattering, Radiation, General Materials Science, Surface plasmon resonance, Plasmon, Quantum well, ComputingMilieux_MISCELLANEOUS, Diode, business.industry, Mechanical Engineering, Surface plasmon, General Chemistry, Equipment Design, Surface Plasmon Resonance, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, Surface plasmon polariton, Nanostructures, Equipment Failure Analysis, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Lasers, Semiconductor, 0210 nano-technology, business, Localized surface plasmon
Abstract

We demonstrate a semiconductor laser-based approach which enables plasmonic active devices in the telecom wavelength range. We show that optimized laser structures based on tensile-strained InGaAlAs quantum wells-coupled to integrated metallic patternings-enable surface plasmon generation in an electrically driven compact device. Experimental evidence of surface plasmon generation is obtained with the slit-doublet experiment in the near-field, using near-field scanning optical microscopy measurements.

Published
2012

16. External-cavity designs for phase-coupled laser diode arrays

Author

Eric C. Larkins, Slawomir Sujecki, Gaëlle Lucas-Leclin, Michel Krakowski, David Paboeuf, Michel Calligaro, Nicolas Michel, J.J. Lim, Patrick Georges, Laboratoire Charles Fabry de l'Institut d'Optique / Elsa, Laboratoire Charles Fabry de l'Institut d'Optique (LCFIO), Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Thales Research and Technology [Palaiseau], THALES [France], The School of Electronic and Electrical Engineering, University of Nottingham, UK (UON), European Project: 34338,WWW.BRIGHTER.EU, Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11), THALES-ALCATEL, and THALES

Subjects
Materials science, Bar (music), Phase (waves), coherent combining, Physics::Optics, FOS: Physical sciences, 02 engineering and technology, law.invention, 020210 optoelectronics & photonics, Optics, law, 0202 electrical engineering, electronic engineering, information engineering, Talbot effect, Optical filter, diode laser array, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Laser diode, business.industry, 021001 nanoscience & nanotechnology, Laser, Transverse plane, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Beam (structure), phase locking, Physics - Optics, Optics (physics.optics)
Abstract

We describe passive phase-locking architectures based on external-cavity setups to improve the brightness of diode laser bars. Volume Bragg gratings are used to stabilize the lase line. Numerical modelling and experimental results will be presented., Comment: High Power Diode Lasers and Systems, Coventry : United Kingdom (2009)

Published
2010
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17. V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology

Author

Christophe Gaquiere, M. Werquin, Stéphane Piotrowicz, Muriel Riet, Jean-Christophe Nallatamby, Olivier Jardel, André Scavennec, Virginie Nodjiadjim, P. Berdaguer, Jean Godin, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), C2S2, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ALCATEL, Alcatel-Thalès, Marcoussis (91), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), and Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Engineering, Fabrication, business.industry, Amplifier, RF power amplifier, Electrical engineering, 020206 networking & telecommunications, Gummel–Poon model, 02 engineering and technology, 01 natural sciences, Microwave applications, [INFO.INFO-CR]Computer Science [cs]/Cryptography and Security [cs.CR], chemistry.chemical_compound, chemistry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Indium phosphide, Radio frequency, business, V band
Abstract

International audience; We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get FT~200 GHz and FMAX>300 GHz, to suit microwave applications. Special attention has been paid to critical thermal behavior. Key devices have been modeled using a modified Gummel-Poon model. Based on these models, and a passive devices library, RF amplifiers have been designed to operate at 60 GHz, fabricated using the developed process, using 2-finger devices, and measured. 1-stage amplifier delivers 5.5 dB, and 2-device 2-stage amplifier achieves up to 10 dB gain.

Published
2009

18. Optical injection of quantum dot and quantum dash semiconductor lasers

Author

Alexandre Shen, Olivier Dehaese, Guang-Hua Duan, Jean Francois Hayau, Kamel Merghem, Odile Le Gouezigou, Francis Poingt, B. Rousseau, Slimane Loualiche, Rozenn Piron, Frédéric Grillot, Anthony Martinez, Pascal Besnard, Olivier Vaudel, Loic Le Gouezigou, Abderrahim Ramdane, Francois Lelarge, Frederic Pommereau, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, and THALES-ALCATEL

Subjects
02 engineering and technology, 01 natural sciences, law.invention, Semiconductor laser theory, Physics::Popular Physics, 020210 optoelectronics & photonics, Optics, law, Computer Science::Multimedia, 0103 physical sciences, Computer Science::Networking and Internet Architecture, 0202 electrical engineering, electronic engineering, information engineering, 010306 general physics, Quantum, Quantum well, Physics, Optical amplifier, Mathematics::Combinatorics, business.industry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Laser, Semiconductor, Quantum dot laser, Quantum dot, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business
Abstract

In this communication, we report experimental results on optical injection of quantum dot (Q-dot) [1] and quantum dash (Q-dash) [2] semiconductor multi-mode lasers. We show the impact of a strong damping on optical injection map and reveal the observation of a random phenomenon of multi-excitability on such structure. These properties are obtained thanks to the different structural properties of Q-dash and Q-dot and by comparing Q-dash lasers having different numbers of Q-dash plans.

Published
2009

19. Numerical and experimental study of a high-power narrow-line phase-locked tapered lasers array in external cavity

Author

Patrick Georges, David Paboeuf, Eric C. Larkins, Gaëlle Lucas-Leclin, Slawomir Sujecki, Michel Krakowski, Nicolas Michel, Jun J. Lim, Laboratoire Charles Fabry de l'Institut d'Optique / Elsa, Laboratoire Charles Fabry de l'Institut d'Optique (LCFIO), Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, The School of Electronic and Electrical Engineering, University of Nottingham, UK (UON), European Project, Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11), and THALES-ALCATEL

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Distributed feedback laser, Materials science, business.industry, 020208 electrical & electronic engineering, Phase (waves), Physics::Optics, 02 engineering and technology, Injection seeder, Laser, law.invention, 020210 optoelectronics & photonics, Optics, law, Fiber laser, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Physics::Accelerator Physics, Optoelectronics, Physics::Atomic Physics, Laser power scaling, business, Beam (structure), Tunable laser
Abstract

We describe both coherent combining and wavelength stabilization of 10 tapered lasers in an external Talbot cavity with a volume Bragg grating. 1.7W at 976 nm in a narrow bandwidth, high coherent beam are obtained.

Published
2009

20. Theoretical and experimental evaluation of a wavelength-stabilized Talbot cavity with a volume Bragg grating

Author

David Paboeuf, Michel Krakowski, Gaëlle Lucas-Leclin, Nicolas Michel, Patrick Georges, Laboratoire Charles Fabry de l'Institut d'Optique / Elsa, Laboratoire Charles Fabry de l'Institut d'Optique (LCFIO), Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, European Project: 34338,WWW.BRIGHTER.EU, Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, 020208 electrical & electronic engineering, Physics::Optics, 02 engineering and technology, Laser, 01 natural sciences, law.invention, 010309 optics, Wavelength, Optics, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Talbot effect, Physics::Accelerator Physics, Optoelectronics, Volume bragg grating, Physics::Atomic Physics, business, Laser beams
Abstract

We describe the coherent combining and the wavelength stabilization of 10 tapered lasers in an external Talbot cavity. The use of a volume Bragg grating as feedback element to narrow the spectrum is demonstrated.

Published
2008

21. Millimeter-wave photonic up-conversion based on a 55GHz quantum dashed mode-locked laser

Author

Francois Lelarge, Monique Thual, Benoit Charbonnier, M. Huchard, F. van Dijk, C. Gonzalez, Philippe Chanclou, Guang-Hua Duan, Orange Labs [Lannion], France Télécom, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), SEE, THALES-ALCATEL, Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne

Subjects
Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Photonic integrated circuit, 020206 networking & telecommunications, 02 engineering and technology, Laser, 01 natural sciences, Signal, law.invention, 010309 optics, Signal-to-noise ratio, Optics, law, 0103 physical sciences, Extremely high frequency, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Radio frequency, Photonics, business, Quantum
Abstract

session Tu.4.F « Radio over Fibre (II) » [Tu.4.F.1]; International audience; A photonic architecture for the up-conversion of a typical millimetre-wave 802.15.3c OFDM signal is experimentally demonstrated. The system is based on a 55 GHz mode-locked laser.

Published
2008

22. Demonstration of chromatic dispersion and optical noise insensitivity of a quantum-dash based Fabry-Perot laser in all-optical clock recovery at 40 Gbit/s

Author

Jean-Claude Simon, Frederic van Dijk, Guang-Hua Duan, Sebastien Lobo, Vincent Roncin, Philippe Rochard, Laurent Bramerie, Alexandre Shen, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, SEE, Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, and THALES-ALCATEL

Subjects
Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Distributed feedback laser, Mathematics::Combinatorics, Multi-mode optical fiber, business.industry, Optical cross-connect, Physics::Optics, 020206 networking & telecommunications, 02 engineering and technology, Optical performance monitoring, Optical modulation amplitude, Laser, 01 natural sciences, law.invention, 010309 optics, Optics, law, Optical transistor, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, business, Clock recovery
Abstract

session 4.3 « SOA-based Signal Processing » [4.3.4], http://www.eurel.org/Conferences_en/ECOC+2007/; International audience; In this paper we propose BER measurements allowing to demonstrate the ultra-low sensitivity of an all-optical clock recovery based on a quantum-dash Fabry-Perot laser to chromatic dispersion and optical noise on the injected signal.

Published
2007

23. Narrow-line coherently combined tapered laser diodes in a Talbot external cavity with a volume Bragg grating

Author

Patrick Georges, Slawomir Sujecki, Gaëlle Lucas-Leclin, Jun Lim, David Paboeuf, Nicolas Michel, Michel Krakowski, Eric C. Larkins, Laboratoire Charles Fabry de l'Institut d'Optique / Elsa, Laboratoire Charles Fabry de l'Institut d'Optique (LCFIO), Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, The School of Electronic and Electrical Engineering, University of Nottingham, UK (UON), European Project: 34338,WWW.BRIGHTER.EU, Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11), and THALES-ALCATEL

Subjects
Materials science, Physics and Astronomy (miscellaneous), Main lobe, Physics::Optics, 02 engineering and technology, Output coupler, 01 natural sciences, Semiconductor laser theory, law.invention, 010309 optics, Laser linewidth, Optics, Fiber Bragg grating, law, Beam propagation method, 0103 physical sciences, Talbot effect, QC, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, 021001 nanoscience & nanotechnology, Laser, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Physics::Accelerator Physics, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; We present the phase locking of an array of index-guided tapered laser diodes. An external cavity based on the self-imaging Talbot effect has been built. A volume Bragg grating is used as the output coupler to stabilize and narrow the spectrum at 976 nm. A power of 1.7 W is achieved in the in-phase single main lobe mode with a high visibility. We have checked that each emitter is locked to the Bragg wavelength with a 100-pm spectrum linewidth. The experimental results compare well with numerical simulations performed with 2D wide angle finite difference beam propagation method.

Published
2008

24. Quantum dash actively modelocked Fabry-Perot laser module demonstrated as part of wavelength tunable RZ transmitter

Author

G. Girault, M. Gay, S. Lobo, L. Bramerie, M. Joindot, J.C. Simon, A. Shen, F. Blache, H. Gariah, F. Mallécot, O. Le Gouezigou, F. Poingt, L. Le Gouezigou, F. Pommereau, B. Rousseau, F. Lelarge, G.-H. Duan, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL

Subjects
Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Transmitter, 02 engineering and technology, Laser, 01 natural sciences, Semiconductor laser theory, law.invention, 010309 optics, Wavelength, 020210 optoelectronics & photonics, Optics, law, 0103 physical sciences, Dash, 0202 electrical engineering, electronic engineering, information engineering, Chirp, Electrical and Electronic Engineering, business, Quantum, Fabry–Pérot interferometer
Abstract

International audience; A quantum dash Fabry-Perot actively modelocked laser module is tested as part of a 42.7 Gbit/s transmitter with more than 10 nm wavelength tunability. Its low chirp level is also assessed through chromatic dispersion tolerance measurements.

Published
2008

25. Analysis and optimization by micro-beam X-ray diffraction of Al- GaInAs heterostructures obtained by Selective Area Growth for optoelectronic applications

Author

Guillamet, R., Lagay, N., Mocuta, C., Dina Carbone, Lagree, P. -Y, Decobert, J., Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), European Synchrotron Radiation Facility (ESRF), Institut Jean le Rond d'Alembert (DALEMBERT), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, and Boyer, Soline

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; Growth of AlGaInAs/InP heterostructures by Selective Area Metal Organic Vapour Phase Epitaxy is investigated in this paper using advanced characterization techniques and numerical modelling. Synchrotron radiation and X-Ray optics allow to have micro or sub-micro X-Ray probe. With this probe, it is possible to characterize our samples by X-Ray Diffraction on very restricted area. This technique was first used on adapted samples to measure locally thickness and composition vatriation and thus to deduce the diffusion length D/ks of the different elements from group III in the vapour phase. The difficulty was to precisely quantify the D/ks simultaneously three elements from group III. In particular Aluminium D/ks parameter was extracted for the first time by X-ray microprobe techniques. D/ks is the only adjustable parameter of the vapour phase diffusion model. This model predicts thickness, composition and emission wavelength everywhere on the substrate and is used to design the dielectric mask patterning. D/ks is consequently a critical parameter and must be known precisely. Strain compensated AlGaInAs MQW were investigated and completely mapped by X-Ray diffraction in order to quantify material thickness and composition. Measurement and simulation have been compared and have shown excellent agreement. This comparison validates the numerical model and then will be used to design next generation of integrated devices.

26. Up to 425 GHz all optical frequency down-conversion clock recovery based on quantum dash fabry-perot mode-locked laser

Author

M. Costa e Silva, A. Lagrost, L. Bramerie, M. Gay, P. Besnard, M. Joindot, J. C. Simon, A. Shen, G. H. Duan, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, OSA, Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, and THALES-ALCATEL

Subjects
Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Optical communication, Optical polarization, 02 engineering and technology, Laser, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, 010309 optics, 020210 optoelectronics & photonics, Optics, Mode-locking, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business, Adaptive optics, Optical filter, 0210 nano-technology, Fabry–Pérot interferometer, Clock recovery
Abstract

Postdeadline Session C " OFDM and OTDM "; International audience; We demonstrate that quantum‐dash mode‐locked laser can perform all optical frequency down‐conversion clock recovery up to 425 GHz. We measured 0.3 dB penalty on the optical recovered clock for 170 Gbit/s signal.

27. 24 channels colorless WDM-PON with L-band 10 Gb/s downstream and C-band 2.5 Gb/s upstream using multiplewavelengths seeding sources based on mode-locked lasers

Author

Pascal Besnard, Alexandre Shen, Alexandre Garreau, Laurent Bramerie, Christophe Kazmierski, Quoc Thai Nguyen, J.-C. Simon, G-H Duan, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-06-TCOM-0008,ANTARES,composANTs Achromatiques pour les Réseau d'accES haut débit 'colourless components for high speed optical access'(2006), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL

Subjects
Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], L band, business.industry, C band, 02 engineering and technology, Laser, 01 natural sciences, law.invention, 010309 optics, 020210 optoelectronics & photonics, Optics, Mode-locking, law, OCIS: 060.0060, 250.0250, 060.4250, Fiber laser, Wavelength-division multiplexing, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Seeding, Upstream (networking), business
Abstract

technical session OThG " Future WDM-PON " [OThG6]; International audience; A novel WDM-PON delivering 10-Gb/s downstream based on L-band loss-less reflective-amplified-modulator and 2.5-Gb/s upstream based on C-band injection-locked Fabry-Perot laser is experimentally demonstrated for 24 channels over 25-km, using quantum-dash mode-locked laser-based multiple-wavelengths seeding sources.

28. Low temperature plasma epitaxy of Silicon on III-V for tandem solar cells

Author

Gwenaelle Hamon, Nicolas Vaissière, Romain Cariou, Wanghua Chen, Martin Foldyna, Raphaël Lachaume, Jean-Luc Maurice, José Alvarez, Jean Decobert, Jean-Paul Kleider, Cabarrocas, Pere Roca I., Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

29. Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes

Author

B. Thestrup, Bernd Sumpf, Michel Krakowski, Lei Lang, Patrick Georges, S. Bull, Gaëlle Lucas-Leclin, David Paboeuf, Eric C. Larkins, Paul Michael Petersen, P.J. Bream, Gilles Pauliat, Hans Wenzel, Slawomir Sujecki, Nicolas Michel, Zhichao Zhang, Jun Jun Lim, G. Erbert, Roderick C. I. MacKenzie, K.-H. Hasler, The School of Electronic and Electrical Engineering, University of Nottingham, UK (UON), Laboratoire Charles Fabry de l'Institut d'Optique / Elsa, Laboratoire Charles Fabry de l'Institut d'Optique (LCFIO), Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Fabry de l'Institut d'Optique / Manolia, Ferdinand-Braun-Institut für Höchtstfrequenztechnik (FBH), Forschungsverbund Berlin e.V. (FVB) (FVB), Department of Photonics Engineering (DTU), Technical University of Denmark [Lyngby] (DTU), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, European Project, Danmarks Tekniske Universitet = Technical University of Denmark (DTU), and THALES [France]-ALCATEL

Subjects
Brightness, Modal discrimination, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Physics::Optics, 02 engineering and technology, 7. Clean energy, 01 natural sciences, law.invention, Semiconductor laser theory, 010309 optics, 020210 optoelectronics & photonics, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electrical and Electronic Engineering, High-power lasers, Spectral purity, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Multi-mode optical fiber, Laser diode, business.industry, Laser simulation, Laser, Atomic and Molecular Physics, and Optics, High-brightness lasers, External cavity laser diodes, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Laser beam quality, Phase-coupled laser diode arrays, business, Phase modulation
Abstract

International audience; High-brightness laser diode technology is a highly dynamic field, which is strongly driven by the rapidly evolving and highly competitive applications markets. The large volume resonators required for high-power, high-brightness operation are known to make their beam parameters and brightness sensitive to thermal and carrier induced lensing and also to multimode operation. However, power and beam quality are no longer the only concerns for the design of high-brightness laser diodes. The increased demand for this technology has been accompanied by a range of new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some (but, by no means all) of the next-generation technologies being pursued for these applications, simultaneously illustrating the growing importance of advanced simulation and design tools. As the simulation tools become more complex, so does their experimental validation and the calibration of the simulation parameters. The paper begins by investigating the brightness limitations of broad-area laser diodes. Next, more advanced technologies are considered, including: two-contact tapered lasers for direct modulation of the output beam; self-organising cavity lasers for efficient generation of a beam with a high spatial and spectral power density; asymmetric feedback broad-area lasers with a dramatically improved beam parameter product; and a phase-locked high-brightness array using an external Talbot cavity.

30. Tunable and variable clock generation up to 1.2 THz by filtering an actively mode-locked 42.5 GHz Quantum Dash Fabry-Perot laser with a reconfigurable filter

Author

A. Lagrost, M. CostaeSilva, M. Gay, L. Bramerie, S. LaRochelle, P. Besnard, A. Shen, G.H. Duan, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Centre d'Optique, Photonique et Laser (COPL), École Polytechnique de Montréal (EPM)-Université Laval [Québec] (ULaval), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL

Subjects
Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Terahertz radiation, Optical communication, Physics::Optics, 02 engineering and technology, Filter (signal processing), Laser, 01 natural sciences, law.invention, 010309 optics, 020210 optoelectronics & photonics, Optics, law, 0103 physical sciences, Dash, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Optical filter, Quantum, Fabry–Pérot interferometer
Abstract

We report on the generation of an optical clock up to 1.2 THz using a Quantum Dash mode-locked laser and a spectral filter, selecting two or three lines, which are separated by the desired spacing.

31. Single quantum dash mode-locked laser as a comb-generator in four-channel 112 Gbit/s WDM transmission

Author

Gay, M., O Hare, A., Bramerie, L., Hao, Z., Fresnel, S., Peucheret, C., Pascal Besnard, Joshi, S., Barbet, S., Lelarge, F., Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Teldot (ANR 2009-VERS-12),Teldot (ANR 2009-VERS-12), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, and ANR-09-VERS-0012,TELDOT,Composants à base de boites quantiques pour applications en telecommunications(2009)

Subjects
Physics, Distributed feedback laser, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Comb generator, Laser, law.invention, Optics, Transmission (telecommunications), Mode-locking, Quantum dot laser, law, Wavelength-division multiplexing, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, business, (140.4050) Mode-Locked Lasers, (060.4510) Optical Communications, Tunable laser
Abstract

International audience; We demonstrate 100 km transmission at 28 Gbit/s/channel of 4 DWDM channels using a single quantum-dash mode-locked laser. The amplitude noise of each filtered laser line is improved using limiting amplification in an SOA.

32. Cascadability assessment of an all optical 3R regenerator based on synchronous modulation in a saturable absorber and optical clock recovery

Author

Q.T. Le, L. Bramerie, V. Roncin, S. Lobo, M. Gay, M. Joindot, J.C. Simon, D. Massoubre, J.-L. Oudar, A. Shen, F. Van Dijk, G.-H. Duan, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, SEE, Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, and THALES-ALCATEL

Subjects
Optical amplifier, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Optical cross-connect, Physics::Optics, Saturable absorption, 02 engineering and technology, Optical modulation amplitude, Optical performance monitoring, Mamyshev 2R regenerator, 01 natural sciences, Optical switch, 010309 optics, 020210 optoelectronics & photonics, Optics, Optical transistor, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, business
Abstract

session 4.3 « SOA-based Signal Processing » [4.3.5], http://www.eurel.org/Conferences_en/ECOC+2007/; International audience; We report the cascadability assessment of 3R regeneration based on optical synchronous modulation using cross saturation absorption in a quantum-well microcavity driven optically by the recovered clock from a self-pulsating laser device.

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