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RF PA is required to have sufficient reliability to protect them from mismatch. In this paper we present the RF characterization of Gallium Arsenide heterojunction bipolar transistor (GaAs HBT) transistors under load mismatched conditions. The mismatch test is carried out on an real-time active load-pull system with load mismatch of voltage standing-wave ratio (VSWR) of 10: 1. It is found that the 1-dB compressed RF output power (1 dB), transducer gain (G T ), and power-added efficiency differ by 5 dBm,6dB, and 15%, respectively, between the optimal and worst phase conditions. This characterization method allows for a non-destructive way of monitoring of the device ruggedness and can be used in both manufacturing and device design stages.

Supplemental material, supplement_material_2_propensity_score_to_match_the_two_cohort for Effect of Chinese Herbal Medicine on the Survival of Colorectal Cancer Patients With Liver-Limited Metastases: A Retrospective Cohort Study, 2008 to 2017 by Cui Shao, Qian Zuo, Jietao Lin, Rong Jian Yu, Yuanfeng Fu, Min Xiao, Ling Ling Sun and Lizhu Lin in Integrative Cancer Therapies

This paper presents our study on the new mode of yield loss caused by Si and poly-Si pitting defects. This is due to ion implanted photoresist popping during high temperature dry strip process as a result of insufficient PR treatment, which exposed these areas to fluorine radicals attack. It was found that for popping to occur during dry strip process, two factors need to be considered, i.e. in terms of ion implant dosage and photoresist coverage, where both must be fulfilled. The solution to prevent Si and poly-Si pitting defects is also discussed and provided in this paper.

In this thesis, micromachined pyroelectric infrared detectors based on a novel PZT/PT multilayer ferroelectric thin film have been successfully developed. Doctor of Philosophy (EEE)