Pure GdS has numerous practical and potential applications in the electronic field, such as optical devices, photovoltaics, photodiodes, and magnetic recording devices. However, the synthesis of pure GdS remains a challenge because Gd, as a raw material, is easily oxidized and the complexity of the previous synthesis methods. In this study, we report on efforts to synthesize high-purity GdS with a simple method. Non-stoichiometric GdSx with 0.68 ≤ x ≤ 1.2 was synthesized by reaction sintering of α-Gd2S3 and GdH2 using a pulse electric current sintering apparatus. The X-ray diffraction (XRD) results showed that GdSx sintering compacts without an impurity phase and with a metallic luster were obtained at a sintering temperature of 1773 K from a mixture of Gd2S3 and GdH2, in which the preparation composition varied between GdS1.1 and GdS0.75. The effects of Gd addition within the homogeneity range of the GdS phase on the lattice constants, microstructure, melting point, and electrical resistivity were studied. The lattice constants of the GdSx compacts were bounded by the stoichiometric composition and decreased with both increasing and decreasing Gd contents. According to the microstructure observations of the cross-sections of the GdSx compacts with excess Gd, low-dimension GdO and Gd2O3 precipitates in a poor amount, which were formed by a specific route, were detected. This microscopic heterogeneity had no effect on the melting point of the compacts that was 2628 ± 40 K for GdS and decreased gradually for the non-stoichiometric compacts because of sulfur or gadolinium vacancies. The electrical conductivity of GdSx compacts was also bounded by the near-stoichiometric composition and decreased with both increasing and decreasing Gd contents. Moreover, when the Gd content was higher than the stoichiometric composition, metallic behavior was exhibited, whereas when the Gd content was less than the stoichiometric composition, semiconductor behavior was exhibited. The behavior of the temperature dependence of the electrical resistivity of GdSx was upon adding excess Gd was found to be unusual, which was explained by the oxidation of Gd and formed micro-impurity precipitates as GdO (micro-oxidation of Gd). Because of micro-oxidation, the electrical properties were incorrectly described if the GdSx phase purity was only controlled by X-ray techniques; therefore, this indicates that microscopic analysis was an indispensable technique to study the actual characteristics of earth monosulfides.