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Background Immune checkpoint inhibitors (ICIs) have revolutionized the treatment of advanced or recurrent non‐small cell lung cancer (NSCLC). They cause immune‐related adverse events (irAEs), but the underlying mechanisms and predictors remain to be fully elucidated. In this retrospective study, we investigated the association between pretreatment neutrophil‐to‐lymphocyte ratio (NLR) and the occurrence of irAEs. Methods The study involved 115 patients with NSCLC who started ICI‐only treatment in our hospital between January 2016 and April 2020. Results Forty‐five patients (39.1%) had irAEs, and pretreatment NLR was significantly lower in the irAEs group than in the non‐irAEs group (2.8 vs. 4.1; p = 0.036). The cutoff value of the NLR was 2.86 (area under curve, 0.62; sensitivity, 0.56; specificity, 0.71), and the incidence rate of irAEs was significantly higher in the NLR, Here, we report that low pretreatment NLR may be a predictive factor for the occurrence of irAEs in NSCLC patients. The cutoff value of the NLR was 2.86, and the univariate and multivariate analysis showed that the NLR was significantly associated with the occurrence of irAEs.

We report the synthesis and optoelectronic properties of high phase-purity (94 mol %) bulk polycrystals of KCoO

A single-beam optical-trap sample holder for X-ray diffraction measurements with synchrotron radiation has been developed. The sample holder was used to obtain an X-ray diffraction image of a single ZnO particle levitated in air, without mechanical contact, by the optical gradient force exerted by a focused laser beam. The diffraction image showed a Debye ring pattern, which was similar to a powder diffraction pattern of an assemblage of ZnO particles. While the ZnO particle is held by the optical trap in air, it rotates irregularly. Therefore, the Debye ring pattern of the ZnO particle can be clearly obtained even if the ZnO particle is a single grain. Lattice parameters and crystallite size of the single ZnO particle were determined simultaneously. The lattice parameters were determined to be a = 3.2505 ± 0.0005 Å and c = 5.207 ± 0.006 Å, which are consistent with those of the assemblage of ZnO particles. The crystallite size determined by the Scherrer method was 193.4 ± 26.2 nm.

Many lichens are well known to accumulate radiocaesium and, thus acting as biomonitors of contamination levels. However, the actual localisation and chemical forms of radiocaesium in contaminated lichens have not yet been elucidated because, despite their high radioactivity, these forms are present in trace amounts as chemical entities. Here, we use autoradiography and demonstrate for the first time in situ microscale localisation of radiocaesium within thallus tissues to investigate the radiocaesium forms and their accumulation mechanism. Radiocaesium distributions showed similar trends in lichen tissues collected two and six years after the Fukushima nuclear accident. The radiocaesium was localised in the brown pigmented parts i.e., melanin-like substances, in the lower cortex of lichen thallus. Quantum chemical calculations showed that functional group of melanin-like substances can chelate Cs+ ion, which indicates that the Cs+ ions form complexes with the substances. Based on these findings, we suggest that radiocaesium ions may be retained stably in melanin-like substances for long periods (two to six years) due to steric factors, such as those seen in porphyrin-like structures and via multimer formation in the lower cortex. In addition, electron microscopy and autoradiography were used to observe radiocaesium-bearing microparticles (CsMPs) on/in the upper cortex and around the medullary layer. Micron-sized particles appeared to adhere to the surface tissue of the thallus, as shown by electron microscopy, suggesting that the particles were trapped by development of an adhesive layer; that is, CsMPs were trapped both physically and physiologically. These findings provide information on in situ localisation of two chemical forms of radiocaesium, cations and particles, in lichen thallus tissues and their accumulation mechanisms.

We investigated the local strain in a silicon carbide (4H-SiC) (0001) trench metal-oxide semiconductor field-effect transistor (MOSFET) using synchrotron nanobeam X-ray diffraction (nano-XRD) at the SPring-8 BL13XU beamline. Using X-rays incident on the 4H-SiC trench cross section, diffraction measurements were performed on the ( 11 2 ¯ 0 ) and ( 11 2 ¯ 4 ) planes. Intensity maps of the 11 2 ¯ 0 and 11 2 ¯ 4 diffractions yielded images reflecting the trench structure. The spatial resolution of the 4H-SiC 11 2 ¯ 4 intensity map in the [0001] direction was higher than that for the 11 2 ¯ 0 diffraction because the angle of incidence was close to perpendicular to the sample. From two-dimensional reciprocal space maps of the symmetric and asymmetric diffractions, the tilt and the ( 11 2 ¯ 0 ) - and (0004)-plane strain components were individually separated and visualized. A tensile strain of approximately 0.1% was found in the region between the trenches. These results indicate the effectiveness of nano-XRD for strain visualization in trench MOSFETs and similar electronic devices.

We measured the thermal expansion coefficients of 18R-LPSO phase and α-Mg phase in a Mg97Zn1Y2 alloy polycrystal. This was achieved by using a Gandolfi camera, which was attached on a high precision diffractometer at SPring-8 BL40XU beamline. By using this system, fine diffraction data were obtained from a Mg97Zn1Y2 polycrystal at 6 different temperatures between 90 and 450 K. We succeeded to determine cell parameters of 18R-LPSO phase and α-Mg phase separately in the Mg97Zn1Y2 alloy polycrystal. The thermal expansion coefficients were determined from the refined cell parameters. The differences of the thermal expansion coefficients of 18R-LPSO phase and α-Mg phase in the Mg97Zn1Y2 alloy were much smaller than those of single-phase 18R-LPSO and α-Mg polycrystals.

Over the past 20 years, many designer drugs derived from controlled substances have been widely distributed as easily available psychoactive substances and have become a serious problem in Japan. In order to determine the absolute structures of four new designer drugs derived from medicines (methylphenidate and phenmetrazine) X-ray single-crystal structure analyses were performed using the BL26B1 beamline of synchrotron radiation facility SPring-8. The results show that the molecular configuration of these designer drugs (having two asymmetric carbons), which were distributed in the illegal drug market had threo-forms as found for methylphenidate and phenmetrazine.

A high-Ge-content Si1–yGey/compositionally graded Si1–xGex-stacked structure grown on Si(001) is now considered to be an important platform for the realization of advanced nanometer-scale complementary metal oxide semiconductor devices with high-mobility channel materials, such as III–V materials and Ge, and monolithically integrated photonic modules. The performance of such advanced devices is critically influenced by crystalline inhomogeneity in the stacked structure; therefore, precise characterization of the crystallinity is important. In particular, the development of a characterization method not only for in-plane crystallinity but also for in-depth crystallinity is strongly required. This is because the crystalline quality of the constant composition Si1–yGey is sensitively dependent on that of the compositionally graded Si1–xGex layers underneath. Here, we have demonstrated in-depth tomographic mapping of a high-Ge-content Si1–yGey/compositionally graded Si1–xGex-stacked structure using position-d...

We report current status of a synchrotron nanobeam X-ray diffraction (nanoXRD) station at SPring-8. The nanoXRD station is located at the 4th experimental hutch of the surface and interface structure beamline BL13XU. The 4th hutch, that was constructed in March 2015, is dedicated for the nanoXRD experiments. There are two types of focusing optics available at the station; a zone plate (ZP) and compound refractive lenses (CRLs). The ZP is used to focus X-rays with energy range from 8 to 15 keV. The minimum beam size of 110 × 150 nm2 is available with the ZP. CRLs made of quartz glass are used for high energy X-rays up to 30 keV. Beam size at 30 keV is 1.6 × 1.6 µm2 and the flux is 1.2 × 1010photons/s. Our main target samples are single crystalline thin films or nano-rods grown on substrates. Cross sectional observations of thick film have also been started. Users can align samples to the rotation center of the goniometer rapidly by preparation using an offline stage that is synchronized to an online stage. In addition, we have developed semi-automatic sample alignment system, that can align any position on a sample surface to the rotation center even if the sample has non-flat surface, like badly cleaved section of a crystal. Details of the station and equipments are introduced.

We realized the milliseconds rapid diffraction measurement using the high-flux synchrotron radiation (SR) of SPring-8 and a high frame rate photon counting detector in BL40XU beamline. We carried out single crystal X-ray diffraction measurements at high rotation speeds up to 80,000 rpm (0.75 ms/rotation) in order to evaluate the limitations of the measurement time and the accuracy of molecular structure. Using a high-speed spindle motor for sample rotation, we successfully analyzed the structure of cytidine (C9H13N3O5) from a dataset of a 60 ms measurement time at a 1,000 rpm sample rotation. However, although weak diffraction spots were clearly observed, the crystal structure could not be solved at an 80,000 rpm sample rotation. These results show that it is possible to observe the crystal structure or lattice parameter changes during one-shot irreversible chemical reactions using the millisecond rapid diffraction measurement.

Au redistribution layers 10 to 100 μm wide were fabricated on heterogeneously integrated advanced flexible hybrid electronics (FHE) substrates formed by a die-first approach based on fan-out wafer-level packaging. The formed Au metal wiring was meticulously studied for locally induced mechanical stress upon bending (bending radius, BR 20 mm) using Laue microdiffraction (LμD) with synchrotron radiation. It was inferred from the LμD data that upon bending the FHE substrate up to the BR of 20 mm, the Au metal wiring (10 mm long, 100 μm wide, and 500 nm thick) experienced mechanical bending stress amounting to 250 ∼ 300 MPa. The stress values obtained from the LμD studies were close to the stress value of 350 MPa obtained by simulation.

Hydrogen as an energy carrier faces challenges such as high costs of hydrogen supply, high cost of fuel cell electric vehicles (FCEVs), and substantial infrastructure requirements. However, leading countries have announced long-term plan and targets in developing hydrogen energy. Should the Association of Southeast Asian Nations (ASEAN) follow up such developments? This study asks if hydrogen-based road transport, especially FCEVs in the fleets of passenger cars, buses, and trucks, could be economically justified in the ASEAN member states. If not, what strategies to take for ASEAN member states? The study applies a well-to-wheel model and a total cost of ownership model to compare the energy consumption, carbon emissions, as well as the costs of FCEVs with those of alternative powertrains. This practice shows the scale of the cost gaps. Subsequently, it estimates the implications of predicted future developments of both hydrogen and FCEVs, in terms of costs and carbon emissions reduced. The results indicate the areas in which FCEVs are most likely to become competitive in the near future, and thus could be targeted and prioritised. By comparing the country-specific results, implications are extended to what policies are most relevant in facilitating the development of hydrogen and fuel cell.

We examined the formation of locally strained Ge nanostructures sandwiched between Ge1−x Sn x stressors using metal-organic chemical vapor deposition method. We have investigated the microscopic local strain and stress in the Ge/Ge1−x Sn x heterostructures using synchrotron microdiffraction and finite element method calculation. The microdiffraction measurement for an asymmetric lattice plane enables directly quantitative evaluation of the strain value of an individual Ge fine line structure with a few tens of nanometers width. An in-plane compressive strain value of 0.9% is achieved for a 30 nm-width Ge line with Ge1−x Sn x stressors, which corresponds to a compressive stress of 1.2 GPa.

The range of polishing-induced subsurface damage remaining in a commercially available production grade 4H-SiC (0001) epi-ready substrate was evaluated by the observation from the (-1100) cleavage plane using two kinds of highly strain-sensitive characterization methods. Firstly, the analysis using electron backscattered diffraction (EBSD) with a submicron spatial resolution was conducted on the exposed cross sectional plane. Then, for the further quantitative evaluation excluding the influence of roughness or contamination of the cleavage plane, a synchrotron X-ray micro-diffraction experiment was carried out. The range of the subsurface damage evaluated in those experiments was ensured by confirming none of additional strain inserted at the cleavage, as compared with the damage-free substrate prepared by high temperature thermal etching. As a result, the depth of the residual strained region below polishing-induced scratches at the surface was estimated to be in the range of a few microns, which is much deeper than the previously reported value of 100 nm by cross-sectional transmission electron microscopy. It suggests a potential of EBSD for the conventional tool to characterize even a small amount of strain in SiC single crystal.

This chapter provides two different X-ray microdiffraction methods to define optical devices with highly brilliant synchrotron radiation. It demonstrates that the two methods were useful for the accurate-analysis of mask width dependent strain change and lattice strain distribution in selective area growth layers. Selective metal-organic vapor phase epitaxial (MOVPE) growth of lnGaAsP layers on a narrow stripe region along the direction of an InP substrate between a pair of dielectric stripe masks is an attractive method for fabricating integrated photonic devices. The lnGaAsP layers and InP cap layers were grown by atmospheric pressure MOVPE in the unmasked regions. The direction of the sample was set parallel to the horizontal plane on the sample stage, to scan the measuring position across the narrow-stripe region of selectively grown layers. The chapter examines the strain distribution in selectively grown layers using the high-spatial-resolution microdiffraction system.

We have investigated the microscopic crystalline morphology such as lattice plane tilting and defects in semipolar (20–21) GaN films grown on (22–43) patterned sapphire substrates (PSS) by using position-dependent ω–2θ map measurement of X-ray microdiffraction (XRMD) combined with transmission electron microscopy (TEM). The results of the position-dependent ω–2θ map measurement for the GaN (20–21) plane showed periodic variation of the diffraction spot shapes depending on the patterning pitch of the PSS. Broadening of the diffraction spots in the terrace area and single diffraction spots in the grooved one were also observed. These results indicate that the lattice plane tilting of the GaN film depends on the PSS structure and the presence of the defective GaN film on the terrace area where basal plane stacking-fault generation occurred, as confirmed by TEM.

The microscopic crystalline structure (MCS) such as domain texturing, lattice tilting fluctuation and strain fluctuation in thick AlN films grown on trench-patterned AlN/α-Al2O3 templates was clarified by utilizing position-dependent X-ray microdiffraction measurements in combination with transmission electron microscopy observations. The results clearly demonstrate that the trench-patterned templates have a strong influence on the MCS in the thick AlN films. The MCS is anisotropic between the [ 11 2 ¯ 0 ] and [ 1 1 ¯ 00 ] directions. Periodic domain texturing was observed along the [ 11 2 ¯ 0 ] direction, corresponding to the periodicity of the patterning pitch of the template. Submicron crystal domains are tilted at different angles to the [ 11 2 ¯ 0 ] direction, and the crystal domain tilting becomes larger in the void-containing trench regions than in the terrace regions. This generates the periodicity in lattice tilting fluctuation and strain fluctuation along the [ 11 2 ¯ 0 ] direction. These were found to be caused primarily by two factors; one of which being the elastic strain relaxation that depends on the growth direction in the terrace regions, and the other being the inhomogeneity in distribution and morphology of dislocations that have Burgers vectors with a screw component in the void-containing trench regions.

Although small bowel endoscopy is commonly performed, cases of ongoing bleeding from small bowel lesions have not been commonly encountered. In the present report, we describe a case of successful endoscopic treatment of an actively bleeding jejunal Dieulafoy's lesion in a 79-year-old man with persistent anemia and melena. Capsule endoscopy indicated active bleeding in the jejunum. Thereafter, double-balloon endoscopy-performed via the oral approach-showed active bleeding from a jejunal Dieulafoy's lesion, which was treated using argon plasma coagulation and hemoclips. The melena subsequently resolved, and the patient's condition improved after the endoscopic treatment.

Development and stability of synchronized long-period stacking ordered (LPSO) structures in Mg97Y2Zn1 alloy were examined by synchrotron-radiation small- and wide-angle scattering/diffraction measurements. The main LPSO structure in the as-cast polycrystalline ingot was 18R, and 14H structure grew at the cost of 18R during annealing. The in-plane peak position increased for longer annealing times in isothermal annealing and also at higher temperatures during in situ heating measurements, and it was interpreted by a composition of peaks corresponding to several sites. The experimental instability temperatures obtained by in situ measurements for in-plane ordering, 18R, and 14H structures agreed within experimental resolution.

We investigated local strain distribution in a cross-sectional area throughout the thickness of a thick aluminum nitride (AlN) film epitaxially grown on a trench-patterned AlN/α-Al2O3 template using X-ray microdiffraction measurements for AlN and Bragg reflections. The results show that the presence of voids caused by the trench pattern strongly influences on the distribution of the strain components in the and directions, which are perpendicular to the trench lines. Discrepancy between strain values obtained from the two Bragg reflections was shown to be the result of twisting of the crystal domains about the axis in the thick AlN film.

In this study, we have examined the formation of uniaxially strained Ge microstructures with embedded Ge 1 − x Sn x epitaxial layers and the microscopic local strain structure in Ge and Ge 1 − x Sn x using synchrotron X-ray microdiffraction and the finite element method. We achieved local heteroepitaxial growth of Ge 0.947 Sn 0.053 layers on the Ge recess regions. Microdiffraction measurements reveal that an average uniaxial compressive strain of 0.19% is induced in Ge locally with Ge 1 − x Sn x stressors. In addition, we found that the Sn precipitation near the Ge 1 − x Sn x /Ge(001) interface occurs after post-deposition annealing at 500 °C without the introduction of dislocation. It is considered that the local Sn precipitation occurs preferentially due to the larger residual stresses near the Ge 1 − x Sn x /Ge interface.

Silicon-lattice distortion in the 50- μm-thick stacked large scale integrated circuit (LSI) chip over Cu-Sn μ-bumps was studied by synchrotron-assisted micro-X-ray diffraction. The top and bottom surfaces of the upper chip experienced 0.25% and 0.1% tensile strain (equivalent to 450 and 200 MPa of tensile stress), respectively. Si [004] plane showed a maximum tilt value of +0.45° and -0.25°, respectively, over the μ-bump and in the bump-space region. Raman spectroscopy revealed that upper stacked chip experienced ~ 1000 MPa of tensile stress and ~ -200 MPa of compressive stress, respectively, over the μ-bump and bump-space regions. Distorted Si-lattice in 3D-LSIs caused 4% and 12% change in ON-current characteristic for n- and p-MOSFET devices, respectively.

We quantitatively evaluated lattice plane microstructure, which includes lattice plane tilt, spacing, twist, and their fluctuations, in a modified Na-flux GaN bulk single crystal using the synchrotron-based nanobeam X-ray diffraction method. The GaN crystal was fabricated by two-step growth; the first layer had coalescence boundaries as a consequence of faceted growth from the multipoint-seed GaN template, and the second layer grew on the first without faceted growth. Position-dependent ω-2θ- mapping analysis revealed in-plane distribution of local lattice plane microstructure along with dislocation morphology around the coalescence boundary and the growth-stage boundary (GSB). Faceted growth from the multipoint seed template led to concentration of a-type dislocations at the coalescence boundary. These dislocations would glide widely on basal planes above the GSB, and then homogeneously propagate toward the surface. As a result, the modified Na-flux GaN crystal had a homogeneous lattice plane microstructure with little bunching of threading dislocations.

X-ray microdiffraction (XRMD) measurements using the AlN 2 2 ¯ 01 and 1 2 ¯ 10 Bragg reflections were performed to determine the cross-sectional distribution of local residual strain and twisting of crystal domains for a thick AlN film grown on a trench-patterned AlN/α-Al 2 O 3 template. The distribution of the strain components in the [0001] and [ 11 2 ¯ 0 ] directions, which are perpendicular to the trench lines, was strongly influenced by the presence of voids caused by the trench pattern. The strains in the [ 1 1 ¯ 00 ] and [ 11 2 ¯ 0 ] directions determined using the two Bragg reflections were found to be significantly different, and this was shown to be the result of twisting of the crystal domains about the [0001] axis under the influence of anisotropic shear stress in the prismatic planes.

In this study, we have examined the local growth of Ge1 − x Sn x heteroepitaxial layers on micrometer-scale-patterned Ge substrates with molecular beam epitaxy method. We have investigated the strain relaxation behavior and microscopic local strain structure in both Ge and Ge1 − x Sn x by using x-ray microdiffraction and finite element method calculation. We found that the anisotropic strain relaxation of embedded Ge1 − x Sn x layers preferentially occurs along the direction which is perpendicular to the stripe line. Microdiffraction method revealed that the elastic strain relaxation of the embedded Ge1 − x Sn x layer occurs near the edge region. We demonstrated that the uniaxial compressive strain of 0.2% is locally induced in Ge with Ge1 − x Sn x stressors.

A sputtered phase-change material, Ge10Sb90, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15–20 ns when a NiCr layer is provided to control the heating–cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase-change material could be a possible candidate for next-generation “green” optical storage.

SrRuO3 (SRO) thin films with a geometric shape of one-dimensional stripes can be epitaxially grown on a SrTiO3 (STO) substrate. Conventional X-ray reciprocal space map (RSM) measurements revealed that the stripes consist of multiple crystallographic domains. We performed synchrotron X-ray microdiffraction measurements to determine whether the single stripe of the SRO has a single crystallographic domain or not. Spacing between stripes is ~200 nm that is comparable to a beam size available for the microdiffraction. The synchrotron X-ray microdiffraction experiment was performed at BL13XU, SPring-8. RSMs of asymmetric diffractions around STO 204 reflection were measured by a broad-beam (200 × 200 µm2) and the sub-micro-beam (250(h) × 190(v) nm2). Both SRO 260 and 620 are seen in the RSM measured by the broad-beam due to the crystallographic twinning. On the other hand, only SRO 620 is observed in the RSM measured by the sub-micro-beam. The result shows the domain length of the single stripe SRO thin film is...

One concern about rotavirus vaccines is its possible association with intussusception. Thus, it is necessary to determine the baseline incidence for intussusception in the first year of life in places where rotavirus vaccines are introduced. However, few safety data exist for the period at which the first dose of Rotarix and RotaTeq are allowed to administer in Japan. The first dose of Rotarix is scheduled to administer at 6-20 weeks of age and that of RotaTeq is scheduled to administer at 6-24 weeks of age; the upper limits for these vaccines is later than the upper limit recommended by the World Health Organization by 5 and 9 weeks, respectively. We performed a retrospective cross-sectional study by reviewing medical charts of all hospitals that provided pediatric beds in Akita Prefecture, Japan, and identifying the cases of intussusception that met the Brighton criteria level 1 in these hospitals between January 2001 and December 2010. During this 10-year period, 122 children younger than 1 year of age were diagnosed with intussusception. The incidence of intussusception was estimated at 158 per 100,000 person-years among children younger than 1 year (95% confidence interval, 131-188), 10 per 100,000 person-years for children aged 0-2 months, 165 for children aged 3-5 months, and 300 for children aged 6-8 months. This rapid and substantial increase in the incidence of intussusception during the first year of life should be considered when formulating the immunization schedule for administering rotavirus vaccines in Japan.

We used X-ray microdiffraction (XRMD) to investigate the crystallinity and strain relaxation of Ge thin lines with widths of 100, 200, 500 and 1000 nm selectively grown on Si(0 0 1) substrates using a patterned SiO 2 mask by chemical vapor deposition. The variations of the strain relaxation in the line and width directions were also investigated in Ge thin lines with a width of 100 nm. After growth, crystal domains with very small tilt angles were detected in Ge lines with all four line widths. The tilt angle range was larger in thinner Ge lines. After annealing at 700 °C, the formation of a single, large domain with a specific tilt angle was detected by XRMD for Ge thin lines with widths of 100 and 200 nm. These experimental results reflect the effects of SiO 2 side walls around the Ge thin lines on crystallinity and strain relaxation of Ge.

The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key element of future complementary metal-oxide-semiconductor device technology. In the conventional bonding process, it is necessary to remove interfacial SiO2 to achieve direct atomic bonding. In this study, using X-ray microdiffraction and transmission electron microscopy, we investigate the structural changes caused by oxide out-diffusion annealing (ODA). It is revealed that crystallinity of the bonded Si(011) layer is degraded after low temperature ODA and gradually recovered with an increase in the ODA temperature and annealing time, which is well correlated with the interfacial SiO2/Si morphology. Characteristic domain textures depending on the ODA temperature are also detected.

Using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) techniques, we have investigated the microscopic structure of Si(011)/Si(001) direct silicon bonding (DSB) substrates. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after oxide out-diffusion annealing. Diffraction analyses for (022) lattice planes with two orthogonal in-plane directions of X-ray incidence revealed anisotropic domain textures in the Si(011) layer. Such anisotropy was also confirmed by TEM in the morphology at the Si(011)/Si(001) bonded interface. The anisotropic crystallinity is discussed on the basis of interfacial defect structures which are proper to the DSB substrate.

We have developed new microdiffraction system at the SPring-8. This system uses a focused beam produced using a phase zone plate combined with a narrow slit, which makes a small focused beam that has a small angular divergence. Furthermore, we can use the two-dimensional x-ray CCD detector, which enable us to measure local reciprocal space maps at many points in a sample, that is, the distribution of strain fields and lattice tilts can be revealed in high-angular- and high-spatial-resolution.

We have investigated the three-dimensional configuration of lattice distortions, including lattice plane tilt and twist, in a high-Ge-content constant-composition Silsubg0.3l/subgGelsubg0.7l/subg (CC-SG)/compositionally graded SiGe strain-relaxed buffer (graded SRB)/Si(001) stacked structure. Position-dependent ω-2θ- mapping (or three-dimensional reciprocal space mapping) by synchrotron-based nanobeam X-ray diffraction revealed the in-plane distributions of both local tilt and twist within an area of 10×10 μm on the sample surface. Depth-resolved crystal information was extracted analytically on the basis of structural features in the graded SRB layer. As a result, a series of tomographic maps that show the three-dimensional distributions of tilt and twist around the CC-SG/graded SRB interface were obtained. Tomographic analysis indicates that the orientation of lattice planes in the graded SRB abruptly changes at a specific depth and at a specific interval. The misfit dislocation distribution observed using transmission electron microscopy is not homogeneous but concentrated at a specific depth, which accounts for the abrupt changes of lattice plane tilt and twist. Our tomographic results clearly verify the dislocation morphology in the SiGe stacked structure, which demonstrates that this analysis method can be a powerful tool for quantitative and non-destructive elucidation of a three-dimensional lattice structure with high spatial resolution.

We developed compound refractive lenses made of quartz glass for wide range of X-ray energy and investigated the focusing performance. The lenses for X-ray energy of 10, 12.4, 15, 20, 25, 30 keV were fabricated by optical lithography and dry etching techniques. Two lenses with the focal distance of 100 and 200 mm were combined in a crossed geometry to achieve two dimensional focusing. The measurements of the focusing properties were performed at beamline BL13XU in SPring-8 with a high-resolution microdiffraction system. The microbeams with the beam size less than 3.2 μm in both vertical and horizontal direction were obtained at all the energies. We also investigated the influence of the local lens condition to the focusing ability. It is found that the focal position moved depending on the illuminated position on the lens due to the shape errors, which causes the increase of the total beam size.

Selective epitaxial growth of Ge films on Si substrates is a key technique for development of high-mobility monolithic MOSFETs with Ge channels alternative to conventional Si-based channels [1]. To date, many studies have been made on growing Ge films on Si substrates for blanket layers and large area devices by molecular beam epitaxy and chemical vapor deposition (CVD). A common subject for the growth of high-quality Ge films on Si(001) is controls of the density and distribution of dislocations which caused by strain relaxation at the Ge/Si interface with lattice mismatch of 4.2 %. In particular, 60° dislocations critically affect the crystallinity of Ge films. Various methods have been proposed to reduce the density of 60° dislocations in Ge layers grown on Si substrates. Besides the problems of dislocations, there is insufficient understanding of crystallinity and strain relaxation in micron-sized Ge films. The use of Si substrates with standard shallow trench isolation (STI) patterning by SiO2 is beneficial for selective growth of Ge films on Si substrates [1]. However, it is unclear the effects of SiO2 side walls on crystallinity and strain relaxation of Ge films on Si window areas. In this study, we investigated the crystallinity of micron-sized Ge thin films epitaxially grown on Si (001) substrates with mask patterns of SiO2 using X-ray microdiffraction (XRMD) [2].

Summary Purpose: De novo STXBP1 mutations have been found in individuals with early infantile epileptic encephalopathy with suppression-burst pattern (EIEE). Our aim was to delineate the clinical spectrum of subjects with STXBP1 mutations, and to examine their biologic aspects. Methods: STXBP1 was analyzed in 29 and 54 cases of cryptogenic EIEE and West syndrome, respectively, as a second cohort. RNA splicing was analyzed in lymphoblastoid cells from a subject harboring a c.663 + 5G>A mutation. Expression of STXBP1 protein with missense mutations was examined in neuroblastoma2A cells. Results: A total of seven novel STXBP1 mutations were found in nine EIEE cases, but not in West syndrome. The mutations include two frameshift mutations, three nonsense mutations, a splicing mutation, and a recurrent missense mutation in three unrelated cases. Including our previous data, 10 of 14 individuals (71%) with STXBP1 aberrations had the onset of spasms after 1 month, suggesting relatively later onset of epileptic spasms. Nonsense-mediated mRNA decay associated with abnormal splicing was demonstrated. Transient expression revealed that STXBP1 proteins with missense mutations resulted in degradation in neuroblastoma2A cells. Discussion: Collectively, STXBP1 aberrations can account for about one-third individuals with EIEE (14 of 43). These genetic and biologic data clearly showed that haploinsufficiency of STXBP1 is the important cause for cryptogenic EIEE.

Endoscopic submucosal dissection (ESD) for early gastric carcinoma has been widely performed in Japan. In this technique, when hemorrhaging from vessels is observed, the bleeding point is coagulated using hemostatic forceps with the soft coagulation. There have been reports that using hemostatic forceps with soft coagulation is a safe and effective method of controlling upper gastrointestinal ulcer bleeding. However, there have been no reports regarding the comparative effectiveness of hemostatic forceps and clipping in upper gastrointestinal ulcer bleeding. Between April 2003 and December 2008, a total of 124 patients with gastric ulcer bleeding causing melena or hematochezia were treated with endoscopic hemostasis in our hospital. Two endoscopic hemostatic methods were used for different groups of patients: coagulation with hemostatic forceps was used for Group A and clipping was used for Group B. The rate of additional treatment required after the initial procedure was 28.6% (8/28) for Group A and 79.2% (76/96) for Group B, indicating a significantly lower rate for Group A than that for Group B (P < 0.01). Additional treatment consists of a hypertonic saline epinephrine injection. The rebleeding rate was 3.6% (1/28) for Group A and 8.3% (8/96) for Group B, again indicating a lower rate for Group A than for Group B. Finally, successful endoscopic hemostasis was 100% in both groups. Using the soft coagulation mode of hemostatic forceps is shown to be a safe, easy and effective method of controlling gastric ulcer bleeding in relation to clipping.

The core-shell nanostructure of epitaxial Fe3O4 nanocrystals over Ge nuclei showed a large Off/On resistance ratio (∼100), which was the largest value in Fe3O4 materials. The nanocrystals with an average diameter of ∼20 nm were grown epitaxially on Si substrates, whose areal density was high (∼1011 cm−2), and each nanocrystal was isolated from each other. The electrical measurement of the individual isolated nanocrystals by conductive-atomic force microscopy showed the bipolar-type resistive switching in local voltage-current curves, depending on the Fe-O composition. It was also revealed that activation sites for resistive switching were the Fe3O4/Ge interfaces, where electric-field-induced compositional variation caused large resistive changes. This demonstrated the possibility of developing resistance random access memory devices based on ubiquitous materials.

This work quantitatively assessed the three-dimensional distribution of crystal lattice distortions in an epitaxial AlN thick film grown on a trench-patterned template, using nanobeam X-ray diffraction. Position-dependent ω-2θ-φ mapping clearly demonstrated local tilting, spacing and twisting of lattice planes as well as fluctuations in these phenomena on a sub-micrometer scale comparable to the pitch of the trench-and-terrace patterning. Analysis of the crystal lattice distortion in the depth direction was performed using a newly developed method in which the X-ray nanobeam diffracted from the sample surface to specific depths can be selectively detected by employing a Pt wire profiler. This technique generated depth-resolved ω-2θ-φ maps confirming that fluctuations in lattice plane tilting and spacing greatly depend on the dislocation distribution and the history of the AlN epitaxial growth on the trench-patterned structure. It was also found that both fluctuations were reduced on approaching the AlN su...