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Gallium-doped zinc oxide(ZnO∶Ga) and phosphorus-doped zinc oxide(ZnO∶P) films were separately prepared on Al2O3 substrates by metal organic chemical vapor deposition(MOCVD) method.The microstructure,electrical and optical properties were studied by X-ray diffraction(XRD),scanning electron microscopy,Hall effect measurement,the room temperature photoluminescence(PL) spectrum,respectively.The n-type ZnO films with a carrier concentration of 1×1019 cm-3 and p-type films with carrier concentration of 1.66×1016 cm-3 were obtained.SEM images showed the films had highly oriented columnar structure.PL spectrum displayed p-type ZnO films showed good optical qualities.

By introducing the GaAs interlayer and controling growth temperature,the p-type ZnMgO films were grown on(0001) Al2O3 substrates by metal organic chemical vapor deposition(MOCVD) method.The X-ray diffraction results indicated that the ZnMgO films showed c-axis preferential orientation at temperature of 440～520 ℃.A conversion of conduction type was confirmed by Hall effect measurement in a range of temperature from 480 to 520 ℃.The lowest resistivity was 26.33 Ω·cm,with a carrier concentration of 1.638×1017 cm-3,and a hall mobility of 1.45 cm2/(V·s).The room temperature photoluminescence(PL) spectrum displayed all the p-type ZnMgO films showed good optical qualities,with a big ratio of near band emission(NBE) to deep level emission(DLE).