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Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al2O3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W–1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other va...

Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS2) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS2 FETs were enhanced at room temperature. Extracted field effect mobility was estimated to be ∼30 cm2 V−1 s−1 after the surface doping process, which is 10 times higher than that of the pristine device. Subthreshold swing and contact resistance were also improved after the TEOA doping process. The enhancement of the subthreshold swing was demonstrated by using an independent FET model. Furthermore, we found that the doping level can be effectively controlled by the heat treatment method. These results demonstrate a promising material system that is easily controlled with high performance, while elucidating the underlying mechanism of improved electrical properties by the doping effect in a multilayered scheme.

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe

Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS

Magnetite nanocrystals of 2–4 nm were synthesized by a chemical coprecipitation method, by which the particle size was controlled by the reaction temperature. The nanocrystals were investigated by XRD, TEM/HRTEM, VSM and SQUID. It is found that the nanocrystals reveal well-defined superparamagnetic behavior before and after annealing, while the observation of the distinct lattices manifest the high crystallinity of the ultrasmall particles.

We synthesized monodisperse CoPt nanoparticles by a modified polyol process, in which Co(acac)3 and Pt(acac)2 were co-reduced by a diol in the presence of PVP surfactants at high temperature (acac = acetylacetonate, PVP = polyvinylpyrrolidone). It is found that the CoPt nanoparticles assume a face-centered cubic phase and possess high crystallinity, with a particle size of 5.3 nm and a tight size distribution. The nanoparticles show superparamagnetism in the as-synthesized state and become ferromagnetic after annealing. The magnetization process of the nanoparticles prior to heat treatment was analyzed by the Langevin equation and their effective magnetic particle size was thus obtained, in close approximation to the results from the XRD and TEM observation.

Magnetite particles of 2–4 nm were synthesized by an economic, biocompatible chemical coprecipitation route, with their size tuned by the reaction temperature. The microstructure and morphology of the nanoparticles were characterized by X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM), whereas the magnetic properties were investigated by vibrating sample magnetometry (VSM) and superconducting quantum interference device (SQUID). It is found that the nanoparticles demonstrate well-defined superparamagnetic behavior as prepared and after annealing. Distinct lattices were observed which manifest the high crystallinity of such ultrasmall particles and the finite-size effect was revealed by analyzing the corresponding microstructure and magnetism.

We report that noise level was reduced by passivating WSe2 field effect transistors (FETs) with high-k dielectric material. Low frequency noise and I-V characteristics of the device were measured from WSe2 FETs before and after the passivation with ZrO2 to confirm the effect of passivation by high-k dielectric material. As a result, there was no significant change in the I–V characteristics. In the low frequency noise analysis, our device showed 1/f noise behaviors, in agreement with the carrier number fluctuation (CNF) model. The passivation process contributed to the reduction of trap sites at the top surface, leading to the decrease of noise level at the low current regime. Extracted volume trap densities were reduced from 2.0 × 1020 cm−3eV−1 to 8.7 × 1019 cm−3eV−1.

Cobalt nanowires were fabricated by DC electrodeposition onto anodic aluminium oxide (AAO) templates. The effects of AAO pore diameter, current density, pH, annealing and deposition under external magnetic fields on the structure and magnetic properties of the nanowire arrays were studied. It is found that the smaller pore size produces high crystallinity, resulting in improved magnetic performance at low current density. The pH can transform fcc-Co phase to hcp-Co phase, with the easy axis along the nanowire axis switched over to the perpendicular direction. Annealing demonstrates excellent thermal stability of the magnetic nanowire arrays at high temperature. The application of external magnetic field during deposition influences the growth habit of the nanowires, leading to the change in the magnetic properties.

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

Polyvinylpyrrolidone (PVP)-coated sub-5 nm monosize Fe 3 O 4 nanoparticles were synthesized by reduction of Fe(III) acetylacetonate in the presence of PVP polymer as surfactant in one-pot polyol process. Their microstructure and magnetic properties were characterized by XRD, TEM/HRTEM and VSM. It is found that the nanoparticles have high crystallinity with distinct lattices and the magnetic measurements reveal their well-defined superparamagnetic behavior at room temperature. Such Fe 3 O 4 nanoparticles with tailorable size and tunable magnetic properties are promising for biomedical applications.

Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process.

The Co and multilayered Co/Cu nanowire arrays were fabricated by pulsed DC electrodeposition using anodized aluminum oxide (AAO) templates. Each nanowire has the length of 20 μm and the diameter of 200 nm. The layer thickness of Co layer was slightly decreased even if the deposition time was fixed as Cu deposition time increased due to the metal exchange. Unlike the Co nanowire array case, multilayered Co/Cu nanowire array exhibited an easy magnetization direction perpendicular to the nanowire axis due to the separation of Co layers.

Ferromagnetic amorphous Ni 16 Fe 62 Si 8 B 14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure.

Hexagonally well-ordered nanoporous anodized aluminum oxide (AAO) templates were synthesized by electrochemical method. Then, magnetite (Fe/sub 3/O/sub 4/) nanoparticles of 8-15-nm diameter were filled in the pores of the AAO template, and then the morphology and magnetic properties were characterized. Vibrating sample magnetometer measurement indicated that the nanoparticles inside AAO showed superparamagnetic behavior at as-filled state. But after annealing at 600/spl deg/C for 2 hr, the nanostructure (i.e., an assembly of nanoparticles) exhibited coercivity of 80 Oe. Superconducting quantum interference measurement device data showed that after annealing the blocking temperature was above 300 K. Thus, the annealed magnetite nanostructures possessed ferrimagnetism.

The authors synthesized ultra-small magnetite (Fe3O4) nanoparticles using aqueous coprecipitation. The crystal structure of the samples was analyzed by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The magnetic properties of the magnetite nanocrystals were investigated using a SQUID magnetometer.

In this research, nano-dot array with magnetite (Fe/sub 3/O/sub 4/) nanoparticles using an anodized aluminum oxide (AAO) nanotemplate is produced. The hexagonally ordered nanotemplates are created using a two-step anodization method. After a pore-widening process of the nanotemplates, the 10 nm nanoparticles are inserted by magnetic stirring method. Annealing of the nanostructures at 500/spl deg/C for 1 hr is done. Surface and cross-section of the template filled with nanoparticles are observed by field emission scanning electron microscopy (FESEM). At as-filled state, the nanostructure shows low coercivity of 20 Oe but after annealing, it increased to 85 Oe. The magnetic properties of nano wires consisting of nanoparticles are improved due to recrystallization and grain growth of each magnetic particles and their structure may be changed due to agglomeration.

A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta45∕Ru9.5∕IrMn10∕CoFe7∕AlOx∕free layer7∕AlOx∕CoFe7∕IrMn10∕Ru60 (in nanometers). Various free layers such as CoFe 7, NiFeSiB 7, CoFe3.5∕NiFeSiB3.5, and NiFeSiB3.5∕CoFe3.5 were prepared and compared. The NiFeSiB-used DMTJ shows a low root-mean-square surface roughness of 0.17 nm, a resistance of about 860Ω, a Vh (voltage where the TMR ratio becomes half of its nonbiased value) of 1.1 V, and a high junction breakdown voltage of 2.0 V. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.

We have investigated the effect of external magnetic field exercised during the fabrication of the Co and Co∕Cu multilayer nanowires in anodic aluminum oxide (AAO) templates using pulse electrodeposition. It is found that the effect becomes significant when the pore size is small. Deterioration occurs in the magnetic properties for the Co nanowires studied, whereas a distinct enhancement in the magnetic properties for the Cu∕Co multilayer nanowires is achieved by applying an external magnetic field during nanowire growth using the AAO template comprising pores of 50nm diameter.